位置：首页 > IC中文资料第1934页 > 2SJ527-L(E)
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
Silicon P Channel MOS FET High Speed Power Switching Silicon P Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS(on)= 0.3 Ωtyp. • Low drive current • 4 V gete drive devices • High speed switching | HitachiHitachi Semiconductor 日立日立公司 |   | ||
Silicon P Channel MOS FET Description High speed power switching Features • Low on-resistance RDS (on)= 0.3 Ωtyp. • Low drive current • 4 V gate drive devices • High speed switching | RENESAS 瑞萨 | | ||
Silicon P Channel MOS FET Description High speed power switching Features • Low on-resistance RDS (on)= 0.3 Ωtyp. • Low drive current • 4 V gate drive devices • High speed switching | RENESAS 瑞萨 | | ||
Silicon P Channel MOS FET High Speed Power Switching Silicon P Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS(on)= 0.3 Ωtyp. • Low drive current • 4 V gete drive devices • High speed switching | HitachiHitachi Semiconductor 日立日立公司 | | ||
Silicon P Channel MOS FET 文件：113.42 Kbytes Page：11 Pages | RENESAS 瑞萨 | |
2SJ527-L(E)产品属性
- 类型
描述
- 型号
2SJ527-L(E)
- 制造商
Renesas
- 功能描述
Trans MOSFET P-CH 60V 5A 3-Pin(3+Tab) DPAK(L)-(1) Box
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
Renesas(瑞萨) |
24+ |
标准封装 |
11048 |
支持大陆交货,美金交易。原装现货库存。 |
|||
HITACHI/日立 |
24+ |
NA/ |
3750 |
原装现货,当天可交货,原型号开票 |
|||
HITACHI |
24+ |
TO252 |
8540 |
只做原装正品现货或订货假一赔十! |
|||
RENESAS/瑞萨 |
22+ |
TO-251 |
100000 |
代理渠道/只做原装/可含税 |
|||
RENESAS |
24+ |
TO-252 |
35000 |
绝对原装正品现货假一罚十 |
|||
RENESAS瑞萨/HITACHI日立 |
24+ |
TO-252 |
8658 |
新进库存/原装 |
|||
VBsemi |
24+ |
TO251 |
9000 |
只做原装正品 有挂有货 假一赔十 |
|||
RENESAS |
25+ |
1300 |
公司现货库存 |
||||
RENESAS |
23+ |
TO-252 |
30000 |
原装正品,假一罚十 |
|||
RENESAS/瑞萨 |
24+ |
TO-251 |
16900 |
原装正品现货支持实单 |
2SJ527-L(E)芯片相关品牌
2SJ527-L(E)规格书下载地址
2SJ527-L(E)参数引脚图相关
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2019-10-30
DdatasheetPDF页码索引
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