位置：首页 > IC中文资料第1934页 > 2SJ527-L(E)
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
Silicon P Channel MOS FET High Speed Power Switching Silicon P Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS(on)= 0.3 Ωtyp. • Low drive current • 4 V gete drive devices • High speed switching | HITACHIHitachi Semiconductor 日立日立公司 |   | ||
Silicon P Channel MOS FET Description High speed power switching Features • Low on-resistance RDS (on)= 0.3 Ωtyp. • Low drive current • 4 V gate drive devices • High speed switching | RENESAS 瑞萨 | | ||
Silicon P Channel MOS FET Description High speed power switching Features • Low on-resistance RDS (on)= 0.3 Ωtyp. • Low drive current • 4 V gate drive devices • High speed switching | RENESAS 瑞萨 | | ||
Silicon P Channel MOS FET High Speed Power Switching Silicon P Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS(on)= 0.3 Ωtyp. • Low drive current • 4 V gete drive devices • High speed switching | HITACHIHitachi Semiconductor 日立日立公司 | | ||
Silicon P Channel MOS FET 文件：113.42 Kbytes Page：11 Pages | RENESAS 瑞萨 | |
2SJ527-L(E)产品属性
- 类型
描述
- 型号
2SJ527-L(E)
- 制造商
Renesas
- 功能描述
Trans MOSFET P-CH 60V 5A 3-Pin(3+Tab) DPAK(L)-(1) Box
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
RENESAS/瑞萨 |
22+ |
TO-252 |
25800 |
原装正品支持实单 |
|||
VBsemi |
24+ |
TO251 |
9000 |
只做原装正品 有挂有货 假一赔十 |
|||
原装 |
25+ |
TO-252 |
20300 |
原装特价2SJ527STR-E即刻询购立享优惠#长期有货 |
|||
RENESAS/瑞萨 |
2511 |
TO-252 |
1562 |
电子元器件采购降本30%!原厂直采,砍掉中间差价 |
|||
RENESAS |
23+ |
NA |
1902 |
专业电子元器件供应链正迈科技特价代理特价，原装元器件供应，支持开发样品 |
|||
Renesas(瑞萨) |
24+ |
标准封装 |
11048 |
支持大陆交货,美金交易。原装现货库存。 |
|||
RENESAS/瑞萨 |
23+ |
TO-252 |
121789 |
原厂授权代理,海外优势订货渠道。可提供大量库存,详 |
|||
NEC |
26+ |
原厂原封装 |
86720 |
全新原装正品价格最实惠 假一赔百 |
|||
RENESAS/瑞萨 |
2447 |
SOT252 |
100500 |
一级代理专营品牌!原装正品,优势现货,长期排单到货 |
|||
HITACHI |
1922+ |
SOT-252 |
35689 |
原装进口现货库存专业工厂研究所配单供货 |
2SJ527-L(E)芯片相关品牌
2SJ527-L(E)规格书下载地址
2SJ527-L(E)参数引脚图相关
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2SJ527-L(E)数据表相关新闻
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2019-10-30
DdatasheetPDF页码索引
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