位置：首页 > IC中文资料第8121页 > 2SJ479(L)|2SJ479(S)
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
Silicon P Channel MOS FET Description High speed power switching Features • Low on-resistance RDS (on) = 25 mΩ typ. • 4 V gate drive devices. • High speed switching | RENESAS 瑞萨 |   | ||
Silicon P Channel DV-L MOS FET High Speed Power Switching Features • Low on-resistance RDS(on) = 25 mΩ typ. • 4V gate drive devices. • High speed switching | HitachiHitachi Semiconductor 日立日立公司 | | ||
Silicon P Channel DV-L MOS FET High Speed Power Switching Features • Low on-resistance RDS(on) = 25 mΩ typ. • 4V gate drive devices. • High speed switching | HitachiHitachi Semiconductor 日立日立公司 | | ||
Silicon P Channel MOS FET Description High speed power switching Features • Low on-resistance RDS (on) = 25 mΩ typ. • 4 V gate drive devices. • High speed switching | RENESAS 瑞萨 | | ||
Silicon P Channel MOS FET 文件：111.15 Kbytes Page：10 Pages | RENESAS 瑞萨 | |
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
Renesas(瑞萨) |
24+ |
标准封装 |
7934 |
支持大陆交货,美金交易。原装现货库存。 |
|||
RENESAS/瑞萨 |
22+ |
SOT-263 |
100000 |
代理渠道/只做原装/可含税 |
|||
RENESAS |
17+ |
TO-263 |
76 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
NEC |
24+ |
TO-263 |
503128 |
免费送样原盒原包现货一手渠道联系 |
|||
RENESAS |
2511 |
TO-263 |
76 |
电子元器件采购降本 30%!盈慧通原厂直采,砍掉中间差价 |
|||
27000 |
24+ |
30000 |
|||||
RENESAS |
24+ |
TO-252 |
9000 |
只做原装正品 有挂有货 假一赔十 |
|||
恩XP |
23+ |
SOD-323 |
69820 |
终端可以免费供样,支持BOM配单! |
|||
RENESAS |
原厂封装 |
9800 |
原装进口公司现货假一赔百 |
||||
RENESAS |
18+ |
TO-263 |
85600 |
保证进口原装可开17%增值税发票 |
2SJ479(L)|2SJ479(S)芯片相关品牌
2SJ479(L)|2SJ479(S)规格书下载地址
2SJ479(L)|2SJ479(S)参数引脚图相关
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2SJ479(L)|2SJ479(S)数据表相关新闻
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2019-10-30
DdatasheetPDF页码索引
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