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2SD201晶体管资料

2SD201别名：2SD201三极管、2SD201晶体管、2SD201晶体三极管
2SD201生产厂家：日本三肯公司
2SD201制作材料：Si-NPN
2SD201性质：低频或音频放大（LF）_开关管（S）_功率放大（L
2SD201封装形式：直插封装
2SD201极限工作电压：90V
2SD201最大电流允许值：6A
2SD201最大工作频率：<1MHZ或未知
2SD201引脚数：2
2SD201最大耗散功率：50W
2SD201放大倍数：
2SD201图片代号：E-44
2SD201vtest：90
2SD201htest：999900
2SD201atest：6
2SD201wtest：50

2SD201代换 2SD201用什么型号代替：BD130,BD245C,BDV95,BDX10,BDX95,BDY20,BDY39,2N3055,2N5632,2N5633,3DD63D,

2SD201价格

参考价格：￥4.0951

型号：2SD2014 品牌：Sanken 备注：这里有2SD201多少钱，2026年最近7天走势，今日出价，今日竞价，2SD201批发/采购报价，2SD201行情走势销售排行榜，2SD201报价。

型号	功能描述	生产厂家企业	LOGO
2SD201	Silicon NPN Power Transistors DESCRIPTION ·With TO-3 package ·Large current capability ·Wide area of safe operation APPLICATIONS ·For power amplifier and switching applications	SAVANTIC	SAVANTIC
2SD201	isc Silicon NPN Power Transistor 文件：263.64 Kbytes Page：2 Pages	ISC 无锡固电	ISC
2SD2012	丝印代码：2SD2012；TO-220-3L Plastic-Encapsulate Transistors FEATURES High DC Current Gain Low Saturation Voltage High Power Dissipation	DGNJDZ 南晶电子	DGNJDZ
2SD2012	Silicon NPN transistor in a TO-220F Plastic Package. Descriptions Silicon NPN transistor in a TO-220F Plastic Package. Features Low VCE(sat),High total power dissipation, complementary pair with 2SB1375. Applications Audio frequency power amplifier applications.	FOSHAN 蓝箭电子	FOSHAN
2SD2012	TO-220F Plastic-Encapsulate Transistors TRANSISTOR (NPN) FEATURES ● Audio frequency power amplifier applications ● High DC current gain ● Low saturation voltage ● High power dissipation	JIANGSU 长电科技	JIANGSU
2SD2012	NPN Silicon Power Transistors Features · High DC Current Gain: hFE(1)=100 (Min.) · Low Saturation Voltage: VCE(sat)=1.0V (Max.) · High Power Dissipation: PC=25W (TC=25OC) · Lead Free Finish/RoHS Compliant (Note1) (P Suffix designates RoHS Compliant. See ordering information) · Epoxy meets UL 94 V-0 flammability rating ·	MCC	MCC
2SD2012	Silicon NPN Power Transistors DESCRIPTION ·With TO-220F package ·Complement to type 2SB1366 ·Low collector saturation voltage ·Collector power dissipation: PC=25W(TC=25℃) APPLICATIONS ·Audio frequency power amplifier and general purpose switching applications	ISC 无锡固电	ISC
2SD2012	Silicon NPN Power Transistors DESCRIPTION ·With TO-220F package ·Complement to type 2SB1366 ·Low collector saturation voltage ·Collector power dissipation: PC=25W(TC=25℃) APPLICATIONS ·Audio frequency power amplifier and general purpose switching applications	SAVANTIC	SAVANTIC
2SD2012	NPN TRIPLE DIFFUSED TYPE (AUDIO FREQUENCY POWER AMPLIFIER APPLICATIONS) Audio Frequency Power Amplifier Applications • Low saturation voltage: VCE (sat)= 0.4 V (typ.) (IC= 2A / IB= 0.2A) • High power dissipation: PC= 25 W (Tc = 25°C)	TOSHIBA 东芝	TOSHIBA
2SD2012	NPN SILICON POWER TRANSISTOR DESCRIPTION The 2SD2012 is a silicon NPN power transistor housed in TO-220F insulated package. It is inteded for power linear and switching applications. ■ HIGH DC CURRENT GAIN ■ LOW SATURATION VOLTAGE ■ INSULATED PACKAGE FOR EASY MOUNTING APPLICATIONS ■ GENERAL PURPOSE POWER AMPLIFIERS ■ G	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
2SD2012FM	Audio Frequency Power Amplifier Applications Audio Frequency Power Amplifier Applications • Low saturation voltage: VCE (sat)= 0.4 V (typ.) (IC= 2A / IB= 0.2A) • High power dissipation: PC= 25 W (Tc = 25°C)	TOSHIBA 东芝	TOSHIBA
2SD2014	Silicon NPN Triple Diffused Planar Transistor(Driver for Solenoid, Relay and Motor, Series Regulator, and General Purpose) Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SB1257) Application : Driver for Solenoid, Relay and Motor, Series Regulator, and General Purpose	SANKEN 三垦	SANKEN
2SD2014	Silicon NPN Power Transistors DESCRIPTION • With TO-220F package • DARLINGTON • Complement to type 2SB1257 APPLICATIONS • Driver for solenoid,relay and motor, series regulator,and general purpose applications	SAVANTIC	SAVANTIC
2SD2014	Silicon NPN Power Transistors DESCRIPTION • With TO-220F package • DARLINGTON • Complement to type 2SB1257 APPLICATIONS • Driver for solenoid,relay and motor, series regulator,and general purpose applications	ISC 无锡固电	ISC
2SD2015	Silicon NPN Power Transistors DESCRIPTION • With TO-220F package • DARLINGTON APPLICATIONS • Driver for solenoid,relay and motor and general purpose applications	JMNIC 锦美电子	JMNIC
2SD2015	Silicon NPN Triple Diffused Planar Transistor(Driver for Solenoid, Relay and Motor and General Purpose) Silicon NPN Triple Diffused Planar Transistor Application : Driver for Solenoid, Relay and Motor and General Purpose	SANKEN 三垦	SANKEN
2SD2015	Silicon NPN Power Transistors DESCRIPTION • With TO-220F package • DARLINGTON APPLICATIONS • Driver for solenoid,relay and motor and general purpose applications	SAVANTIC	SAVANTIC
2SD2015	Silicon NPN Power Transistors DESCRIPTION • With TO-220F package • DARLINGTON APPLICATIONS • Driver for solenoid,relay and motor and general purpose applications	ISC 无锡固电	ISC
2SD2016	isc Silicon NPN Darlington Power Transistor DESCRIPTION • Collector-Emitter Breakdown Voltage- : V(BR)CEO= 200V(Min) • Collector-Emitter Saturation Voltage- : VCE(sat)= 1.5V(Max) @IC= 1A • High DC Current Gain : hFE= 1000(Min) @ IC= 1A, VCE= 4V APPLICATIONS • Igniter, relay and general purpose applications.	ISC 无锡固电	ISC
2SD2016	Silicon NPN Triple Diffused Planar Transistor(Igniter, Relay and General Purpose) Silicon NPN Triple Diffused Planar Transistor Application : Igniter, Relay and General Purpose	SANKEN 三垦	SANKEN
2SD2017	Silicon NPN Triple Diffused Planar Transistor(Driver for Solenoid, Relay and Motor and General Purpose) Silicon NPN Triple Diffused Planar Transistor Application : Driver for Solenoid, Relay and Motor and General Purpose	SANKEN 三垦	SANKEN
2SD2017	Silicon NPN Power Transistors DESCRIPTION • With TO-220F package • DARLINGTON APPLICATIONS • Driver for solenoid,relay and motor and general purpose applications	SAVANTIC	SAVANTIC
2SD2017	Silicon NPN Power Transistors DESCRIPTION • With TO-220F package • DARLINGTON APPLICATIONS • Driver for solenoid,relay and motor and general purpose applications	ISC 无锡固电	ISC
2SD2018	Silicon NPN epitaxial planar type darlington Silicon NPN epitaxial planar type darlington For low-frequency amplification ■ Features • High forward current transfer ratio hFE • Built-in 60 V Zener diode between base to collector	PANASONIC 松下	PANASONIC
2SD2019	Silicon NPN Epitaxial Application Low frequency power amplifier	HITACHIHitachi Semiconductor 日立日立公司	HITACHI
2SD2010	1.2W PACKAGE POWER TAPED TRANSISTOR DESIGNED FOR USE WITH AN AUTOMATIC PLACEMENT MECHINE 文件：88.13 Kbytes Page：2 Pages	ROHM 罗姆	ROHM
2SD2010	丝印代码：T105；TRANSISTORS TO 92L TO-92LS MRT 文件：195.39 Kbytes Page：2 Pages	ROHM 罗姆	ROHM
2SD2011	丝印代码：T105；TRANSISTORS TO 92L TO-92LS MRT 文件：195.39 Kbytes Page：2 Pages	ROHM 罗姆	ROHM
2SD2011	1.2W PACKAGE POWER TAPED TRANSISTOR DESIGNED FOR USE WITH AN AUTOMATIC PLACEMENT MECHINE 文件：88.13 Kbytes Page：2 Pages	ROHM 罗姆	ROHM
2SD2012	NPN SILICON POWER TRANSISTOR 文件：127.21 Kbytes Page：5 Pages	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
2SD2012	Audio Frequency Power Amplifier Applications 文件：133.1 Kbytes Page：5 Pages	TOSHIBA 东芝	TOSHIBA
2SD2012	Silicon NPN Triple Diffused Type 文件：131.47 Kbytes Page：5 Pages	TOSHIBA 东芝	TOSHIBA
2SD2012	Silicon NPN Power Transistors 文件：205.36 Kbytes Page：3 Pages	SAVANTIC	SAVANTIC
2SD2012	双极晶体管	FOSHAN 蓝箭电子	FOSHAN
2SD2012	普通三极管	FOSAN 富信半导体	FOSAN
2SD2012	中等功率双极型晶体管	MCC	MCC
2SD2012_03	NPN SILICON POWER TRANSISTOR 文件：127.21 Kbytes Page：5 Pages	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
2SD2012_06	Silicon NPN Triple Diffused Type 文件：131.47 Kbytes Page：5 Pages	TOSHIBA 东芝	TOSHIBA
2SD2012_09	Audio Frequency Power Amplifier Applications 文件：133.1 Kbytes Page：5 Pages	TOSHIBA 东芝	TOSHIBA
2SD2012-BP	封装/外壳：TO-220-3 包装：卷带（TR）描述：TRANS NPN 60V 3A TO220AB 分立半导体产品晶体管 - 双极性晶体管（BJT）- 单个	MCC	MCC
2SD2014	Silicon NPN Triple Diffused Planar Transistor 文件：35.44 Kbytes Page：1 Pages	SANKEN 三垦	SANKEN
2SD2014	封装/外壳：TO-220-3 整包包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带描述：TRANS NPN DARL 80V 4A TO220F 分立半导体产品晶体管 - 双极性晶体管（BJT）- 单个	SANKEN 三垦	SANKEN
2SD2014	Silicon NPN Power Transistors 文件：215.53 Kbytes Page：3 Pages	SAVANTIC	SAVANTIC
2SD2014_01	Silicon NPN Triple Diffused Planar Transistor 文件：34.97 Kbytes Page：1 Pages	SANKEN 三垦	SANKEN
2SD2015	Silicon NPN Triple Diffused Planar Transistor 文件：35.35 Kbytes Page：1 Pages	SANKEN 三垦	SANKEN
2SD2015	Silicon NPN Power Transistors 文件：214.6 Kbytes Page：3 Pages	SAVANTIC	SAVANTIC
2SD2015_01	Silicon NPN Triple Diffused Planar Transistor 文件：34.89 Kbytes Page：1 Pages	SANKEN 三垦	SANKEN
2SD2015_2015	Silicon NPN Power Transistors 文件：77.75 Kbytes Page：3 Pages	JMNIC 锦美电子	JMNIC
2SD2016	Silicon NPN Triple Diffused Planar Transistor 文件：30.8 Kbytes Page：1 Pages	SANKEN 三垦	SANKEN
2SD2016_01	Silicon NPN Triple Diffused Planar Transistor 文件：30.33 Kbytes Page：1 Pages	SANKEN 三垦	SANKEN
2SD2017	Silicon NPN Power Transistors 文件：214.43 Kbytes Page：3 Pages	SAVANTIC	SAVANTIC
2SD2017	Silicon NPN Triple Diffused Planar Transistor 文件：34.92 Kbytes Page：1 Pages	SANKEN 三垦	SANKEN
2SD2017_01	Silicon NPN Triple Diffused Planar Transistor 文件：34.45 Kbytes Page：1 Pages	SANKEN 三垦	SANKEN

2SD201产品属性

类型
描述
Polarity：
NPN
PCM(W)：
2
IC(A)：
3
VCBO(V)：
60
VCEO(V)：
60
VEBO(V)：
7
hFEMin：
100
hFEMax：
320
hFE@VCE(V)：
5
hFE@IC(A)：
0.5
VCE(sat)(V)：
1
VCE(sat)@IC(A)：
2
VCE(sat)@IB(A)：
0.2
Package：
TO-220F

2SD201供应商更多...

更新时间：2026-5-14 12:20:00

IC供应商	芯片型号	品牌	批号	封装	库存	备注	价格
上海磐岳电子有限公司	2SD2012	TOSHIBA	2023+	TO-220	58000	进口原装,现货热卖	询价
洪芯国际半导体（深圳）有限公司	2SD2012	CJ/长电	26+	原厂原封装	86720	全新原装正品价格最实惠假一赔百	询价
深圳市美思瑞电子科技有限公司	2SD2012	TOSHIBA/东芝	22+	TO-220F	12245	现货,原厂原装假一罚十!	询价
深圳市华来深电子有限公司	2SD2011	ROHM	25+	SMD	20000	专做罗姆，一系列可以订货排单，只做原装正品假一罚十	询价
中天科工半导体（深圳）有限公司	2SD2012	CJ	20+	TO220	32970	原装优势主营型号-可开原型号增税票	询价
深圳市诺美思科技有限公司	2SD2012	TOSHIBA		原厂封装	9800	原装进口公司现货假一赔百	询价
深圳市科恒伟业电子有限公司	2SD2011	N/A	2450+	TO-92L	6540	只做原装正品现货或订货!终端客户免费申请样品!	询价
深圳市宇创芯科技有限公司	2SD2012	TOSHIBA/东芝	24+	TO220	9600	原装现货,优势供应,支持实单!	询价
深圳市粤骏腾电子科技有限公司	2SD2012/D2012	TOSHIBA/东芝	24+	TO220	420	大批量供应优势库存热卖	询价
深圳诚思涵科技有限公司	2SD2012	TOSHIBA	18+	TO-220F	85600	保证进口原装可开17%增值税发票	询价

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找IC，尽在114IC

2SD201晶体管资料

2SD201价格

2SD201产品属性

2SD201供应商更多...

2SD201芯片相关品牌

2SD201规格书下载地址

2SD201参数引脚图相关

2SD201数据表相关新闻

2SD667L-TO92NLB-C-TG_UTC代理商

2SD1898G-SOT89R-Q-TG_UTC代理商

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DdatasheetPDF页码索引