封装/外壳：TO-220-3 包装：卷带（TR） 描述：TRANS NPN 60V 3A TO220AB 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

Silicon NPN Power Transistors

DESCRIPTION ·With TO-220F package ·Complement to type 2SB1366 ·Low collector saturation voltage ·Collector power dissipation: PC=25W(TC=25℃) APPLICATIONS ·Audio frequency power amplifier and general purpose switching applications

NPN TRIPLE DIFFUSED TYPE (AUDIO FREQUENCY POWER AMPLIFIER APPLICATIONS)

Audio Frequency Power Amplifier Applications • Low saturation voltage: VCE (sat)= 0.4 V (typ.) (IC= 2A / IB= 0.2A) • High power dissipation: PC= 25 W (Tc = 25°C)

NPN SILICON POWER TRANSISTOR

DESCRIPTION The 2SD2012 is a silicon NPN power transistor housed in TO-220F insulated package. It is inteded for power linear and switching applications. ■ HIGH DC CURRENT GAIN ■ LOW SATURATION VOLTAGE ■ INSULATED PACKAGE FOR EASY MOUNTING APPLICATIONS ■ GENERAL PURPOSE POWER AMPLIFIERS ■ G

NPN SILICON POWER TRANSISTOR

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Silicon NPN Triple Diffused Type

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