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2SD20晶体管资料

  • 2SD20别名:2SD20三极管、2SD20晶体管、2SD20晶体三极管

  • 2SD20生产厂家:日本日电公司

  • 2SD20制作材料:Ge-NPN

  • 2SD20性质:低频或音频放大 (LF)_TR_输出极 (E)

  • 2SD20封装形式:直插封装

  • 2SD20极限工作电压:25V

  • 2SD20最大电流允许值:0.3A

  • 2SD20最大工作频率:<1MHZ或未知

  • 2SD20引脚数:3

  • 2SD20最大耗散功率:0.15W

  • 2SD20放大倍数:β=50

  • 2SD20图片代号:D-9

  • 2SD20vtest:25

  • 2SD20htest:999900

  • 2SD20atest:0.3

  • 2SD20wtest:0.15

  • 2SD20代换 2SD20用什么型号代替:AC127,AC176,AC187,2N1302,2SD72,2SD352,3BX81B,

2SD20价格

参考价格:¥4.0951

型号:2SD2014 品牌:Sanken 备注:这里有2SD20多少钱,2026年最近7天走势,今日出价,今日竞价,2SD20批发/采购报价,2SD20行情走势销售排行榜,2SD20报价。
型号 功能描述 生产厂家 企业 LOGO 操作

丝印代码:2SD2012;TO-220-3L Plastic-Encapsulate Transistors

FEATURES High DC Current Gain Low Saturation Voltage High Power Dissipation

DGNJDZ

南晶电子

丝印代码:2SD2061;TO-220-3L Plastic-Encapsulate Transistors

FEATURES Low Saturation Voltage Excellent DC Current Gain Characteristice

DGNJDZ

南晶电子

NPN TRIPLE DIFFUSED PLANAR SILICON TRANSISTOR(COLOR TV HORIZONTAL OUTPUT APPLICATIONS)

COLOR TV HORIZONTAL OUTPUT APPLICATIONS(No Damper Diode) ● High Collector-Base Voltage(VCBO=1500V) ● High Speed Switching

WINGS

永盛电子

Silicon NPN Power Transistors

DESCRIPTION ·With TO-3 package ·High voltage ,high reliability ·Wide area of safe operation APPLICATIONS ·For color TV horizontal output applications

SAVANTIC

Silicon NPN Power Transistors

DESCRIPTION ·With TO-3 package ·High voltage ,high reliability ·Wide area of safe operation APPLICATIONS ·For color TV horizontal output applications

ISC

无锡固电

Silicon NPN triple diffusion planar type(For power switching)

Features • High-speed switching • Satisfactory linearity of forward current transfer ratio hFE • Large collector power dissipation PC • Full-pack package which can be installed to the heat sink with one screw

PANASONIC

松下

Silicon NPN Power Transistors

DESCRIPTION ·With TO-220Fa package ·High-speed switching ·Large collector power dissipation APPLICATIONS ·For power switching applications

ISC

无锡固电

Silicon NPN Power Transistors

DESCRIPTION ·With TO-220Fa package ·High-speed switching ·Large collector power dissipation APPLICATIONS ·For power switching applications

SAVANTIC

isc Silicon NPN Power Transistor

DESCRIPTION • Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 700V(Min.) • High Switching Speed • Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS • Designed for use in horizontal deflection circuits of color TV receivers.

ISC

无锡固电

Silicon NPN Power Transistors

DESCRIPTION ·With TO-3 package ·Large current capability ·Wide area of safe operation APPLICATIONS ·For power amplifier and switching applications

SAVANTIC

Silicon NPN Power Transistors

DESCRIPTION ·With TO-220F package ·Complement to type 2SB1366 ·Low collector saturation voltage ·Collector power dissipation: PC=25W(TC=25℃) APPLICATIONS ·Audio frequency power amplifier and general purpose switching applications

SAVANTIC

Silicon NPN Power Transistors

DESCRIPTION ·With TO-220F package ·Complement to type 2SB1366 ·Low collector saturation voltage ·Collector power dissipation: PC=25W(TC=25℃) APPLICATIONS ·Audio frequency power amplifier and general purpose switching applications

ISC

无锡固电

TO-220F Plastic-Encapsulate Transistors

TRANSISTOR (NPN) FEATURES ● Audio frequency power amplifier applications ● High DC current gain ● Low saturation voltage ● High power dissipation

JIANGSU

长电科技

NPN SILICON POWER TRANSISTOR

DESCRIPTION The 2SD2012 is a silicon NPN power transistor housed in TO-220F insulated package. It is inteded for power linear and switching applications. ■ HIGH DC CURRENT GAIN ■ LOW SATURATION VOLTAGE ■ INSULATED PACKAGE FOR EASY MOUNTING APPLICATIONS ■ GENERAL PURPOSE POWER AMPLIFIERS ■ G

STMICROELECTRONICS

意法半导体

Silicon NPN transistor in a TO-220F Plastic Package.

Descriptions Silicon NPN transistor in a TO-220F Plastic Package. Features Low VCE(sat),High total power dissipation, complementary pair with 2SB1375. Applications Audio frequency power amplifier applications.

FOSHAN

蓝箭电子

NPN TRIPLE DIFFUSED TYPE (AUDIO FREQUENCY POWER AMPLIFIER APPLICATIONS)

Audio Frequency Power Amplifier Applications • Low saturation voltage: VCE (sat)= 0.4 V (typ.) (IC= 2A / IB= 0.2A) • High power dissipation: PC= 25 W (Tc = 25°C)

TOSHIBA

东芝

NPN Silicon Power Transistors

Features · High DC Current Gain: hFE(1)=100 (Min.) · Low Saturation Voltage: VCE(sat)=1.0V (Max.) · High Power Dissipation: PC=25W (TC=25OC) · Lead Free Finish/RoHS Compliant (Note1) (P Suffix designates RoHS Compliant. See ordering information) · Epoxy meets UL 94 V-0 flammability rating ·

MCC

Audio Frequency Power Amplifier Applications

Audio Frequency Power Amplifier Applications • Low saturation voltage: VCE (sat)= 0.4 V (typ.) (IC= 2A / IB= 0.2A) • High power dissipation: PC= 25 W (Tc = 25°C)

TOSHIBA

东芝

Silicon NPN Triple Diffused Planar Transistor(Driver for Solenoid, Relay and Motor, Series Regulator, and General Purpose)

Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SB1257) Application : Driver for Solenoid, Relay and Motor, Series Regulator, and General Purpose

SANKEN

三垦

Silicon NPN Power Transistors

DESCRIPTION • With TO-220F package • DARLINGTON • Complement to type 2SB1257 APPLICATIONS • Driver for solenoid,relay and motor, series regulator,and general purpose applications

ISC

无锡固电

Silicon NPN Power Transistors

DESCRIPTION • With TO-220F package • DARLINGTON • Complement to type 2SB1257 APPLICATIONS • Driver for solenoid,relay and motor, series regulator,and general purpose applications

SAVANTIC

Silicon NPN Power Transistors

DESCRIPTION • With TO-220F package • DARLINGTON APPLICATIONS • Driver for solenoid,relay and motor and general purpose applications

JMNIC

锦美电子

Silicon NPN Power Transistors

DESCRIPTION • With TO-220F package • DARLINGTON APPLICATIONS • Driver for solenoid,relay and motor and general purpose applications

SAVANTIC

Silicon NPN Power Transistors

DESCRIPTION • With TO-220F package • DARLINGTON APPLICATIONS • Driver for solenoid,relay and motor and general purpose applications

ISC

无锡固电

Silicon NPN Triple Diffused Planar Transistor(Driver for Solenoid, Relay and Motor and General Purpose)

Silicon NPN Triple Diffused Planar Transistor Application : Driver for Solenoid, Relay and Motor and General Purpose

SANKEN

三垦

Silicon NPN Triple Diffused Planar Transistor(Igniter, Relay and General Purpose)

Silicon NPN Triple Diffused Planar Transistor Application : Igniter, Relay and General Purpose

SANKEN

三垦

isc Silicon NPN Darlington Power Transistor

DESCRIPTION • Collector-Emitter Breakdown Voltage- : V(BR)CEO= 200V(Min) • Collector-Emitter Saturation Voltage- : VCE(sat)= 1.5V(Max) @IC= 1A • High DC Current Gain : hFE= 1000(Min) @ IC= 1A, VCE= 4V APPLICATIONS • Igniter, relay and general purpose applications.

ISC

无锡固电

Silicon NPN Power Transistors

DESCRIPTION • With TO-220F package • DARLINGTON APPLICATIONS • Driver for solenoid,relay and motor and general purpose applications

ISC

无锡固电

Silicon NPN Power Transistors

DESCRIPTION • With TO-220F package • DARLINGTON APPLICATIONS • Driver for solenoid,relay and motor and general purpose applications

SAVANTIC

Silicon NPN Triple Diffused Planar Transistor(Driver for Solenoid, Relay and Motor and General Purpose)

Silicon NPN Triple Diffused Planar Transistor Application : Driver for Solenoid, Relay and Motor and General Purpose

SANKEN

三垦

Silicon NPN epitaxial planar type darlington

Silicon NPN epitaxial planar type darlington For low-frequency amplification ■ Features • High forward current transfer ratio hFE • Built-in 60 V Zener diode between base to collector

PANASONIC

松下

Silicon NPN Epitaxial

Application Low frequency power amplifier

HITACHIHitachi Semiconductor

日立日立公司

Silicon NPN Power Transistors

DESCRIPTION ·With TO-220C package ·Complement to type 2SB1033 ·Low collector saturation voltage APPLICATIONS ·Low frequency power amplifiers ·Power drivers ·DC-DC converters

ISC

无锡固电

TAPED POWER TRANSISTOR PACKAGE FOR USE WITH AN AUTOMATIC PLACEMENT MACHINE

Epitaxial Planar NPN Silicon Transistor TAPED POWER TRANSISTOR PACKAGE FOR USE WITH AN AUTOMATIC PLACEMENT MACHINE)

ROHM

罗姆

Silicon NPN Power Transistors

DESCRIPTION ·With TO-220C package ·Complement to type 2SB1033 ·Low collector saturation voltage APPLICATIONS ·Low frequency power amplifiers ·Power drivers ·DC-DC converters

SAVANTIC

Silicon NPN Power Transistors

DESCRIPTION • With TO-220C package • High DC current gain • Low saturation voltage • DARLINGTON APPLICATIONS • For low frequency power amplifier and power driver applications

SAVANTIC

Silicon NPN Power Transistors

DESCRIPTION • With TO-220C package • High DC current gain • Low saturation voltage • DARLINGTON APPLICATIONS • For low frequency power amplifier and power driver applications

ISC

无锡固电

丝印代码:C7;TAPED POWER TRANSISTOR PACKAGE FOR USE WITH AN AUTOMATIC PLACEMENT MACHINE

Epitaxial Planar NPN Silicon Transistor TAPED POWER TRANSISTOR PACKAGE FOR USE WITH AN AUTOMATIC PLACEMENT MACHINE)

ROHM

罗姆

丝印代码:C7;TAPED POWER TRANSISTOR PACKAGE FOR USE WITH AN AUTOMATIC PLACEMENT MACHINE

Epitaxial Planar NPN Silicon Transistor TAPED POWER TRANSISTOR PACKAGE FOR USE WITH AN AUTOMATIC PLACEMENT MACHINE)

ROHM

罗姆

Silicon NPN Power Transistors

DESCRIPTION ·With TO-220Fa package ·High DC current gain ·Low saturation voltage ·DARLINGTON ·Complement to type 2SB1344 APPLICATIONS ·For low frequency power amplifier and power driver applications

ISC

无锡固电

POWER TRANSISTOR (-100V, -8A)

Power Transistor ( -100V, - 8A) Power Transistor (100V, 8A)

ROHM

罗姆

Silicon NPN Power Transistors

DESCRIPTION ·With TO-220Fa package ·High DC current gain ·Low saturation voltage ·DARLINGTON ·Complement to type 2SB1344 APPLICATIONS ·For low frequency power amplifier and power driver applications

SAVANTIC

isc Silicon NPN Power Transistor

DESCRIPTION • Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(Min) • Good Linearity of hFE • Wide Area of Safe Operation • Complement to Type 2SB1346 APPLICATIONS • Designed for low frequency and general purpose amplifier applications.

ISC

无锡固电

NPN Epitaxial Planar Silicon Transistor

Features ● With Zener diode (11±3V) between collector and base. ● Large current capacity. ● Low collector-to-emitter saturation voltage.

KEXIN

科信电子

Low-Frequency Power Amp Applications

Low-Frequency Power Amp Applications

SANYO

三洋

Silicon NPN triple diffusion planar type(For high power amplification)

Silicon NPN triple diffusion planar type For high power amplification Complementary to 2SB1347 ■Features ● Satisfactory foward current transfer ratio hFE collector current IC characteristics ● Wide area of safe operation (ASO) ● High transition frequency fT ● Optimum f

PANASONIC

松下

Silicon NPN Power Transistors

Silicon NPN Power Transistors DESCRIPTION ·With TO-3PL package ·Complement to type 2SB1347 ·Wide area of safe operation ·High transition frequency APPLICATIONS ·Optimum for the output stage of a Hi-Fi audio amplifier applications

ISC

无锡固电

Silicon NPN Power Transistors

Silicon NPN Power Transistors DESCRIPTION ·With TO-3PL package ·Complement to type 2SB1347 ·Wide area of safe operation ·High transition frequency APPLICATIONS ·Optimum for the output stage of a Hi-Fi audio amplifier applications

SAVANTIC

Silicon NPN Epitaxial

Application Low frequency high voltage amplifier

HITACHIHitachi Semiconductor

日立日立公司

Silicon NPN Epitaxial

Application Low frequency high voltage amplifier

RENESAS

瑞萨

Silicon NPN Epitaxial

Application Low frequency high voltage amplifier

RENESAS

瑞萨

Silicon NPN Epitaxial

Application Low frequency high voltage amplifier

HITACHIHitachi Semiconductor

日立日立公司

丝印代码:T114;TAPED POWER TRANSISTOR PACKAGE FOR USE WITH AN AUTOMATIC PLACEMENT MACHINE

Epitaxial Planar NPN Silicon Transistor TAPED POWER TRANSISTOR PACKAGE FOR USE WITH AN AUTOMATIC PLACEMENT MACHINE)

ROHM

罗姆

丝印代码:T114;TAPED POWER TRANSISTOR PACKAGE FOR USE WITH AN AUTOMATIC PLACEMENT MACHINE

Epitaxial Planar NPN Silicon Transistor TAPED POWER TRANSISTOR PACKAGE FOR USE WITH AN AUTOMATIC PLACEMENT MACHINE)

ROHM

罗姆

Silicon NPN transistor in a TO-220F Plastic Package.

Descriptions Silicon NPN transistor in a TO-220F Plastic Package. Features High VCEO,SOA, High transition frequency and small Cob. Applications power amplifier applications.

FOSHAN

蓝箭电子

isc Silicon NPN Power Transistor

DESCRIPTION • Good Linearity of hFE • Collector-Emitter Breakdown Voltage- : V(BR)CEO= 120V(Min) • Complement to Type 2SB1353 APPLICATIONS • Designed for use in high voltage driver applications.

ISC

无锡固电

丝印代码:T114;TAPED POWER TRANSISTOR PACKAGE FOR USE WITH AN AUTOMATIC PLACEMENT MACHINE

Epitaxial Planar NPN Silicon Transistor TAPED POWER TRANSISTOR PACKAGE FOR USE WITH AN AUTOMATIC PLACEMENT MACHINE)

ROHM

罗姆

丝印代码:T114;TAPED POWER TRANSISTOR PACKAGE FOR USE WITH AN AUTOMATIC PLACEMENT MACHINE

Epitaxial Planar NPN Silicon Transistor TAPED POWER TRANSISTOR PACKAGE FOR USE WITH AN AUTOMATIC PLACEMENT MACHINE)

ROHM

罗姆

丝印代码:T114;TAPED POWER TRANSISTOR PACKAGE FOR USE WITH AN AUTOMATIC PLACEMENT MACHINE

Epitaxial Planar NPN Silicon Transistor TAPED POWER TRANSISTOR PACKAGE FOR USE WITH AN AUTOMATIC PLACEMENT MACHINE)

ROHM

罗姆

丝印代码:T114;TAPED POWER TRANSISTOR PACKAGE FOR USE WITH AN AUTOMATIC PLACEMENT MACHINE

Epitaxial Planar NPN Silicon Transistor TAPED POWER TRANSISTOR PACKAGE FOR USE WITH AN AUTOMATIC PLACEMENT MACHINE)

ROHM

罗姆

2SD20产品属性

  • 类型

    描述

  • Polarity:

    NPN

  • PCM(W):

    2

  • IC(A):

    3

  • VCBO(V):

    60

  • VCEO(V):

    60

  • VEBO(V):

    7

  • hFEMin:

    100

  • hFEMax:

    320

  • hFE@VCE(V):

    5

  • hFE@IC(A):

    0.5

  • VCE(sat)(V):

    1

  • VCE(sat)@IC(A):

    2

  • VCE(sat)@IB(A):

    0.2

  • Package:

    TO-220F

更新时间:2026-5-14 11:00:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
长电
25+
TO-220F
48419
百分百原装正品 真实公司现货库存 本公司只做原装 可
CJ
26+
QFN
86720
全新原装正品价格最实惠 假一赔百
ROHM
25+
SMD
20000
专做罗姆,一系列可以订货排单,只做原装正品假一罚十
ROHM
23+
TO220
4500
绝对全新原装!优势供货渠道!特价!请放心订购!
ROHM
24+
5000
sanyo
24+
4326
公司原厂原装现货假一罚十!特价出售!强势库存!
ROHM
2004
TO220
6521
现货库存/价格优惠热卖
蓝箭
2023+
TO-220
50000
原装现货
ROHM/罗姆
2026+
TO220
8097
全新原装现货,可出样品,可开增值税发票
ROHM/罗姆
24+
TO220
9600
原装现货,优势供应,支持实单!

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