isc Silicon NPN Darlington Power Transistor

DESCRIPTION • Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(Min) • High DC Current Gain : hFE= 1000(Min) @IC= 2A • Complement to Type 2SB1101 APPLICATIONS • Designed for low frequency power amplifiers applications.

isc Silicon NPN Darlington Power Transistor

DESCRIPTION • Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V(Min) • High DC Current Gain : hFE= 1000(Min) @IC= 2A • Complement to Type 2SB1102 APPLICATIONS • Designed for low frequency power amplifiers applications.

isc Silicon NPN Darlington Power Transistor

DESCRIPTION ·Collector-Emitter Breakdown Voltage-: V(BR)CEO= 60V(Min) ·High DC Current Gain: hFE= 1000(Min) @IC= 4A ·Complement to Type 2SB1103 APPLICATIONS ·Designed for low frequency power amplifiers applications.

LOW FREQUENCY POWER AMPLIFIER COMPLEMENT PAIR WITH 2SB1103 AND 2SB1104

SILICON NPN TRIPLE DIFFUSED LOW FREQUENCY POWER AMPLIFIER COMPLEMENTARY PAIR WITH 2SB1103 AND 2SB1104

isc Silicon NPN Darlington Power Transistor

DESCRIPTION • Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V(Min) • High DC Current Gain : hFE= 1000(Min) @IC= 4A • Complement to Type 2SB1104 APPLICATIONS • Designed for low frequency power amplifiers applications.

LOW FREQUENCY POWER AMPLIFIER COMPLEMENT PAIR WITH 2SB1103 AND 2SB1104

SILICON NPN TRIPLE DIFFUSED LOW FREQUENCY POWER AMPLIFIER COMPLEMENTARY PAIR WITH 2SB1103 AND 2SB1104

isc Silicon NPN Darlington Power Transistor

DESCRIPTION • Collector-Emitter Breakdown Voltage- : V(BR)CEO= 120V(Min) • High DC Current Gain : hFE= 1000(Min) @IC= 1.5A • Complement to Type 2SB1105 APPLICATIONS • Designed for low frequency power amplifiers applications.

Silicon NPN Triple Diffused

Application Low frequency power amplifier

Silicon NPN Triple Diffused

Application Low frequency power amplifier

Medium Speed Power Switching

Si NPN Triple Diffused Planar Darlington Medium Speed Power Switching Complementary Pair with 2SB1108 Features • High hFE • High speed switching • Full Pack package for simplified mounting only by a screw, requires no insulator.

isc Silicon NPN Darlington Power Transistor

DESCRIPTION • Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 120V(Min) • High DC Current Gain : hFE= 1000(Min) @IC= 4A • High Speed Switching APPLICATIONS • Designed for medium speed power switching applications.

Silicon NPN Epitaxial

Application Low frequency high voltage amplifier complementary pair with 2SB1109 and 2SB1110

Silicon NPN Epitaxial

Application Low frequency high voltage amplifier complementary pair with 2SB1109 and 2SB1110

Silicon NPN triple diffusion planar type Darlington(For power amplification)

Silicon NPN triple diffusion planar type darlington For power amplification ■ Features • High forward current transfer ratio hFE • High collector-base voltage (Emitter open) VCBO • N type package enabling direct soldering of the radiating fin to the printed circuit board, etc. of small electr

Silicon NPN Triple Diffusion Planar Type Darlington

Features ● High forward current transfer ratio hFE ● High collector-base voltage (Emitter open) VCBO

Silicon NPN Power Transistor

DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 400V(Min) ·DC Current Gain- : hFE= 500(Min)@ IC= 2A APPLICATIONS ·DC-DC converter,relay drivers,lamp drivers,motor drivers, inverter

Silicon NPN Power Transistor

DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 400V(Min) ·DC Current Gain- : hFE= 500(Min)@ IC= 2A APPLICATIONS ·DC-DC converter,relay drivers,lamp drivers,motor drivers, inverter

Silicon NPN Power Transistor

DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 400V(Min) ·DC Current Gain- : hFE= 500(Min)@ IC= 2A APPLICATIONS ·DC-DC converter,relay drivers,lamp drivers,motor drivers, inverter

Silicon NPN Power Transistor

DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 400V(Min) ·DC Current Gain- : hFE= 500(Min)@ IC= 2A APPLICATIONS ·DC-DC converter,relay drivers,lamp drivers,motor drivers, inverter

SILICON TRANSISTOR

NPN SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD

NPN Silicon Epitaxial Transistor

■ Features ● High DC Current Gain:hFE 135 to 600. ● Low VCE(sat) ● Complementary to 2SB1114

NPN SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD

DESCRIPTION The 2SD1614 is designed for audio frequency power amplifier and switching application, especially in Hybrid Integrated Circuits.

NPN-Silicon General use Transistors

NPN-Silicon General use Transistors 1W 、 1.5A、 25V Applications： Can be used for switching and amplifying in various electrical and electronic circuit.

World Standard Miniature Package

Features World Standard Miniature Package. Low VCE(sat) VCE(sat) = 0.15 V

Old Company Name in Catalogs and Other Documents

DESCRIPTION 2SD1615, 1615A are designed for audio frequency power amplifier and switching application, especially in Hybrid Integrated Circuits. FEATURES • Low VCE (sat) VCE(sat) = 0.15 V • Complement to 2SB1115, 1115A

Old Company Name in Catalogs and Other Documents

DESCRIPTION 2SD1615, 1615A are designed for audio frequency power amplifier and switching application, especially in Hybrid Integrated Circuits. FEATURES • Low VCE (sat) VCE(sat) = 0.15 V • Complement to 2SB1115, 1115A

NPN Silicon Epitaxial Transistor

Features ● World Standard Miniature Package. ● Low VCE(sat) VCE(sat) = 0.15 V

NPN SILICON EPITAXIAL TRANSISTORS POWER MINI MOLD

DESCRIPTION 2SD1615, 1615A are designed for audio frequency power amplifier and switching application, especially in Hybrid Integrated Circuits. FEATURES • World Standard Miniature Package • Low VCE (sat) VCE(sat) = 0.15 V • Complement to 2SB1115, 2SD1115A

NPN SILICON EPITAXIAL TRANSISTORS POWER MINI MOLD

DESCRIPTION 2SD1615, 1615A are designed for audio frequency power amplifier and switching application, especially in Hybrid Integrated Circuits. FEATURES • World Standard Miniature Package • Low VCE (sat) VCE(sat) = 0.15 V • Complement to 2SB1115, 2SD1115A

NPN Silicon Epitaxial Transistor

Features ● World Standard Miniature Package. ● Low VCE(sat) VCE(sat) = 0.15 V

Old Company Name in Catalogs and Other Documents

DESCRIPTION 2SD1615, 1615A are designed for audio frequency power amplifier and switching application, especially in Hybrid Integrated Circuits. FEATURES • Low VCE (sat) VCE(sat) = 0.15 V • Complement to 2SB1115, 1115A

NPN Silicon Transistor

NPN Silicon Transistor The 2SD1616 / 2SD1616A are designed for use in driver and output stages of AF amplifier general purpose application. The transistor is subdivided into three groups R, O and Y, according to its DC current gain On special request, these transistors can be manufactured i

TRANSISTOR (NPN)

TRANSISTOR (NPN) FEATURE Power dissipation PCM: 0.75 W (Tamb=25℃) Collector current ICM: 1 A Collector-base voltage V(BR)CBO: 60 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃

TO-92 Plastic-Encapsulate Transistors

TRANSISTOR (NPN) FEATURES ● Low VCE(sat) ● Complementary Transistor with The 2SB1116

NPN EPITAXIAL SILICON TRANSISTOR

NPN EPITAXIAL SILICON TRANSISTOR DESCRIPTION * Audio frequency power amplifier * Medium speed switching

NPN SILICON TRANSISTORS

DESCRIPTION The 2SD1616/2SD1616A are designed for use in driver and output stages of AF amplifier, general purpose application.

NPN Transistors

NPN Transistors P/b Lead(Pb)-Free

SILICON TRANSISTORS

NPN SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS AND MID-SPEED SWITCHING FEATURES • Low VCE(sat): VCE(sat) = 0.15 V TYP. (IC = 1.0 A, IB = 50 mA) • Large PT in small dimension with versatility PT = 0.75 W, VCEO = 50/60 V, IC(DC) = 1.0 A • Complementary transistor with t

TO-92 Plastic-Encapsulate Transistors

FEATURES Low VCE(sat) Complementary Transistor with The 2SB1116

SOT-89-3L Plastic-Encapsulate Transistors

FEATURES Low collector saturation voltage High break down voltage High total power dissipation

TO-92 Plastic-Encapsulate Transistors

FEA TURE Power dissipation

SILICON TRANSISTORS

NPN SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS AND MID-SPEED SWITCHING FEATURES • Low VCE(sat): VCE(sat) = 0.15 V TYP. (IC = 1.0 A, IB = 50 mA) • Large PT in small dimension with versatility PT = 0.75 W, VCEO = 50/60 V, IC(DC) = 1.0 A • Complementary transistor with t

NPN Transistors

NPN Transistors P/b Lead(Pb)-Free

NPN SILICON TRANSISTORS

DESCRIPTION The 2SD1616/2SD1616A are designed for use in driver and output stages of AF amplifier, general purpose application.

NPN EPITAXIAL SILICON TRANSISTOR

NPN EPITAXIAL SILICON TRANSISTOR DESCRIPTION * Audio frequency power amplifier * Medium speed switching

TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR

Description Designed for audio frequency power amplifier and medium-speed switching applications.

TO-92 Plastic-Encapsulate Transistors

TRANSISTOR (NPN) FEATURE Power dissipation

NPN SILICON TRANSISTOR

DESCRIPTION 2SD1616A is NPN silicon planar transistor designed for use in driver and output stages of AF amplifier, general purpose application.

NPN Plastic-Encapsulated Transistor

FEATURES • Power dissipation

SOT-89-3L Plastic-Encapsulate Transistors

TRANSISTOR（NPN） FEATURES ● Low collector saturation voltage ● High break down voltage ● High total power dissipation

TRANSISTOR (NPN)

FEATURE Power dissipation PCM: 0.75 W (Tamb=25℃) Collector current ICM: 1 A Collector-base voltage V(BR)CBO: 120 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃

TRANSISTOR (NPN)

TRANSISTOR (NPN) FEATURE Power dissipation

TO-92 Plastic-Encapsulate Transistors

FEA TURE Power dissipation

TO-92 Plastic-Encapsulate Transistors

FEA TURE Power dissipation

TO-92 Plastic-Encapsulate Transistors

FEATURES Low VCE(sat) Complementary Transistor with The 2SB1116

Low-Voltage High-Current Amplifier, Muting Applications

Features · Low collector-to-emitter saturation voltage. · Very small size making it easy to provide high density, small-sized hybrid IC’s.

Bipolar Transistor 15V, 0.7A, Low VCE(sat), NPN Single PCP

Features • Low collector-to-emitter saturation voltage • Very small size making it easy to provide highdensity, small-sized hybrid IC’s

PNP Epitaxial Planar Silicon Transistors

■ Features ● Low collector-to-emitter saturation voltage. ● Very small size making it easy to provide highdensity, small-sized hybrid IC’s. ● Complementary to 2SB1118

Low-Voltage, High-Current Amp, Muting Applications

Features · Low collector-to-emitter saturation voltage. · Very small size making it easy to provide high density, small-sized hybrid IC’s.

Bipolar Transistor 15V, 0.7A, Low VCE(sat), NPN Single PCP

Features • Low collector-to-emitter saturation voltage • Very small size making it easy to provide highdensity, small-sized hybrid IC’s