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2SD1616晶体管资料
2SD1616别名:2SD1616三极管、2SD1616晶体管、2SD1616晶体三极管
2SD1616生产厂家:日本日电公司
2SD1616制作材料:Si-NPN
2SD1616性质:LO.SAT
2SD1616封装形式:贴片封装
2SD1616极限工作电压:60V
2SD1616最大电流允许值:1A
2SD1616最大工作频率:160MHZ
2SD1616引脚数:3
2SD1616最大耗散功率:0.75W
2SD1616放大倍数:
2SD1616图片代号:A-20
2SD1616vtest:60
2SD1616htest:160000000
- 2SD1616atest:1
2SD1616wtest:0.75
2SD1616代换 2SD1616用什么型号代替:2SC3328,2SC4485,2SC4486,2SD592A,2SD667,2SD1207,2SD1293M,2SD1490,2SD1835,
型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
---|---|---|---|---|
2SD1616 | NPN EPITAXIAL SILICON TRANSISTOR NPN EPITAXIAL SILICON TRANSISTOR DESCRIPTION * Audio frequency power amplifier * Medium speed switching | UTC 友顺 | ||
2SD1616 | NPN SILICON TRANSISTORS DESCRIPTION The 2SD1616/2SD1616A are designed for use in driver and output stages of AF amplifier, general purpose application. | NEC 瑞萨 | ||
2SD1616 | NPN Transistors NPN Transistors P/b Lead(Pb)-Free | WEITRON | ||
2SD1616 | TO-92 Plastic-Encapsulate Transistors TRANSISTOR (NPN) FEATURES ● Low VCE(sat) ● Complementary Transistor with The 2SB1116 | JIANGSU 长电科技 | ||
2SD1616 | SILICON TRANSISTORS NPN SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS AND MID-SPEED SWITCHING FEATURES • Low VCE(sat): VCE(sat) = 0.15 V TYP. (IC = 1.0 A, IB = 50 mA) • Large PT in small dimension with versatility PT = 0.75 W, VCEO = 50/60 V, IC(DC) = 1.0 A • Complementary transistor with t | RENESAS 瑞萨 | ||
2SD1616 | NPN Silicon Transistor NPN Silicon Transistor The 2SD1616 / 2SD1616A are designed for use in driver and output stages of AF amplifier general purpose application. The transistor is subdivided into three groups R, O and Y, according to its DC current gain On special request, these transistors can be manufactured i | SEMTECH_ELEC 先之科半导体 | ||
2SD1616 | TO-92 Plastic-Encapsulate Transistors FEATURES Low VCE(sat) Complementary Transistor with The 2SB1116 | DGNJDZ 南晶电子 | ||
2SD1616 | TRANSISTOR (NPN) TRANSISTOR (NPN) FEATURE Power dissipation PCM: 0.75 W (Tamb=25℃) Collector current ICM: 1 A Collector-base voltage V(BR)CBO: 60 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃ | WINNERJOIN 永而佳 | ||
2SD1616 | TRANSISTOR(NPN) | ETC 知名厂家 | ETC | |
2SD1616 | Bipolar Transistor | UTC 友顺 | ||
2SD1616 | 晶体管 | JSCJ 长晶科技 | ||
2SD1616 | NPN EPITAXIAL SILICON TRANSISTOR 文件:184.47 Kbytes Page:4 Pages | UTC 友顺 | ||
2SD1616 | NPN EPITAXIAL SILICON TRANSISTOR 文件:66.6 Kbytes Page:4 Pages | UTC 友顺 | ||
NPN SILICON TRANSISTORS DESCRIPTION The 2SD1616/2SD1616A are designed for use in driver and output stages of AF amplifier, general purpose application. | NEC 瑞萨 | |||
NPN EPITAXIAL SILICON TRANSISTOR NPN EPITAXIAL SILICON TRANSISTOR DESCRIPTION * Audio frequency power amplifier * Medium speed switching | UTC 友顺 | |||
TRANSISTOR (NPN) FEATURE Power dissipation PCM: 0.75 W (Tamb=25℃) Collector current ICM: 1 A Collector-base voltage V(BR)CBO: 120 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃ | WINNERJOIN 永而佳 | |||
TRANSISTOR (NPN) TRANSISTOR (NPN) FEATURE Power dissipation | KOOCHIN 灏展电子 | |||
SOT-89-3L Plastic-Encapsulate Transistors FEATURES Low collector saturation voltage High break down voltage High total power dissipation | DGNJDZ 南晶电子 | |||
TO-92 Plastic-Encapsulate Transistors FEA TURE Power dissipation | DGNJDZ 南晶电子 | |||
SILICON TRANSISTORS NPN SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS AND MID-SPEED SWITCHING FEATURES • Low VCE(sat): VCE(sat) = 0.15 V TYP. (IC = 1.0 A, IB = 50 mA) • Large PT in small dimension with versatility PT = 0.75 W, VCEO = 50/60 V, IC(DC) = 1.0 A • Complementary transistor with t | RENESAS 瑞萨 | |||
SOT-89-3L Plastic-Encapsulate Transistors TRANSISTOR(NPN) FEATURES ● Low collector saturation voltage ● High break down voltage ● High total power dissipation | JIANGSU 长电科技 | |||
NPN SILICON TRANSISTOR DESCRIPTION 2SD1616A is NPN silicon planar transistor designed for use in driver and output stages of AF amplifier, general purpose application. | MICRO-ELECTRONICS | |||
NPN Plastic-Encapsulated Transistor FEATURES • Power dissipation | SECOS 喜可士 | |||
NPN Transistors NPN Transistors P/b Lead(Pb)-Free | WEITRON | |||
TO-92 Plastic-Encapsulate Transistors TRANSISTOR (NPN) FEATURE Power dissipation | DAYA 大亚电器 | |||
TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR Description Designed for audio frequency power amplifier and medium-speed switching applications. | DCCOM 道全 | |||
TO-92 Plastic-Encapsulate Transistors FEA TURE Power dissipation | DGNJDZ 南晶电子 | |||
TO-92 Plastic-Encapsulate Transistors FEA TURE Power dissipation | DGNJDZ 南晶电子 | |||
TO-92 Plastic-Encapsulate Transistors FEATURES Low VCE(sat) Complementary Transistor with The 2SB1116 | DGNJDZ 南晶电子 | |||
NPN EPITAXIAL SILICON TRANSISTOR 文件:66.6 Kbytes Page:4 Pages | UTC 友顺 | |||
NPN EPITAXIAL SILICON TRANSISTOR 文件:184.47 Kbytes Page:4 Pages | UTC 友顺 | |||
NPN EPITAXIAL SILICON TRANSISTOR 文件:66.6 Kbytes Page:4 Pages | UTC 友顺 | |||
NPN Plastic-Encapsulated Transistor 文件:346.75 Kbytes Page:2 Pages | SECOS 喜可士 | |||
NPN EPITAXIAL SILICON TRANSISTOR 文件:66.6 Kbytes Page:4 Pages | UTC 友顺 | |||
NPN EPITAXIAL SILICON TRANSISTOR 文件:66.6 Kbytes Page:4 Pages | UTC 友顺 | |||
NPN EPITAXIAL SILICON TRANSISTOR 文件:66.6 Kbytes Page:4 Pages | UTC 友顺 | |||
NPN EPITAXIAL SILICON TRANSISTOR 文件:66.6 Kbytes Page:4 Pages | UTC 友顺 | |||
NPN EPITAXIAL SILICON TRANSISTOR 文件:66.6 Kbytes Page:4 Pages | UTC 友顺 | |||
NPN EPITAXIAL SILICON TRANSISTOR 文件:66.6 Kbytes Page:4 Pages | UTC 友顺 | |||
NPN EPITAXIAL SILICON TRANSISTOR 文件:66.6 Kbytes Page:4 Pages | UTC 友顺 | |||
NPN EPITAXIAL SILICON TRANSISTOR 文件:66.6 Kbytes Page:4 Pages | UTC 友顺 | |||
NPN EPITAXIAL SILICON TRANSISTOR 文件:66.6 Kbytes Page:4 Pages | UTC 友顺 | |||
NPN EPITAXIAL SILICON TRANSISTOR 文件:66.6 Kbytes Page:4 Pages | UTC 友顺 | |||
NPN EPITAXIAL SILICON TRANSISTOR 文件:66.6 Kbytes Page:4 Pages | UTC 友顺 | |||
NPN EPITAXIAL SILICON TRANSISTOR 文件:66.6 Kbytes Page:4 Pages | UTC 友顺 | |||
NPN EPITAXIAL SILICON TRANSISTOR 文件:66.6 Kbytes Page:4 Pages | UTC 友顺 | |||
NPN EPITAXIAL SILICON TRANSISTOR 文件:66.6 Kbytes Page:4 Pages | UTC 友顺 | |||
NPN EPITAXIAL SILICON TRANSISTOR 文件:66.6 Kbytes Page:4 Pages | UTC 友顺 | |||
NPN EPITAXIAL SILICON TRANSISTOR 文件:66.6 Kbytes Page:4 Pages | UTC 友顺 | |||
NPN EPITAXIAL SILICON TRANSISTOR 文件:184.47 Kbytes Page:4 Pages | UTC 友顺 | |||
NPN EPITAXIAL SILICON TRANSISTOR 文件:184.47 Kbytes Page:4 Pages | UTC 友顺 | |||
NPN EPITAXIAL SILICON TRANSISTOR 文件:184.47 Kbytes Page:4 Pages | UTC 友顺 | |||
NPN EPITAXIAL SILICON TRANSISTOR 文件:184.47 Kbytes Page:4 Pages | UTC 友顺 | |||
NPN EPITAXIAL SILICON TRANSISTOR 文件:184.47 Kbytes Page:4 Pages | UTC 友顺 | |||
NPN EPITAXIAL SILICON TRANSISTOR 文件:66.6 Kbytes Page:4 Pages | UTC 友顺 | |||
NPN EPITAXIAL SILICON TRANSISTOR 文件:66.6 Kbytes Page:4 Pages | UTC 友顺 | |||
NPN EPITAXIAL SILICON TRANSISTOR 文件:66.6 Kbytes Page:4 Pages | UTC 友顺 | |||
NPN EPITAXIAL SILICON TRANSISTOR 文件:66.6 Kbytes Page:4 Pages | UTC 友顺 | |||
NPN EPITAXIAL SILICON TRANSISTOR 文件:66.6 Kbytes Page:4 Pages | UTC 友顺 | |||
NPN EPITAXIAL SILICON TRANSISTOR 文件:66.6 Kbytes Page:4 Pages | UTC 友顺 |
2SD1616产品属性
- 类型
描述
- 型号
2SD1616
- 制造商
Renesas Electronics
- 功能描述
NPN
- 制造商
Renesas Electronics
- 功能描述
NPN Bulk
IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
UTC/友顺 |
22+ |
SOT-89 |
100000 |
代理渠道/只做原装/可含税 |
|||
NEC |
24+ |
NA/ |
8250 |
原装现货,当天可交货,原型号开票 |
|||
长晶科技 |
21+ |
TO-92 |
20 |
全新原装鄙视假货 |
|||
UTC |
2024+ |
SOT-89 |
500000 |
诚信服务,绝对原装原盘 |
|||
UTC |
15+ |
SOP-89 |
11000 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
CJ/长电 |
25+ |
SOT-89 |
32360 |
CJ/长电全新特价2SD1616A即刻询购立享优惠#长期有货 |
|||
UTC/友顺 |
23+ |
SOT-89 |
50000 |
原装正品 支持实单 |
|||
NEC |
2450+ |
TO-92 |
6885 |
只做原装正品假一赔十为客户做到零风险!! |
|||
UTC |
24+ |
SOT-89 |
10000 |
只做原装正品现货欢迎来电查询15919825718 |
|||
UTC(友顺) |
24+/25+ |
TO-92-3 |
1000 |
UTC原厂一级代理商,价格优势! |
2SD1616规格书下载地址
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2SD1616数据表相关新闻
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2019-2-152SC945_2SC945晶体管_2SC945中文资料_2SC945代换
2SC945、2SC945晶体管、2SC945中文资料、2SC945代换、c945可以用什么代替、c945用什么型号代替、2SC945配对管、2SC945放大倍数、2SC945品牌、C945、C945三极管、C945晶体管、C945晶体三极管、2SC945三极管、2SC945晶体管、2SC945晶体三极管
2018-12-19
DdatasheetPDF页码索引
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