2SD1616晶体管资料

  • 2SD1616别名:2SD1616三极管、2SD1616晶体管、2SD1616晶体三极管

  • 2SD1616生产厂家:日本日电公司

  • 2SD1616制作材料:Si-NPN

  • 2SD1616性质:LO.SAT

  • 2SD1616封装形式:贴片封装

  • 2SD1616极限工作电压:60V

  • 2SD1616最大电流允许值:1A

  • 2SD1616最大工作频率:160MHZ

  • 2SD1616引脚数:3

  • 2SD1616最大耗散功率:0.75W

  • 2SD1616放大倍数

  • 2SD1616图片代号:A-20

  • 2SD1616vtest:60

  • 2SD1616htest:160000000

  • 2SD1616atest:1

  • 2SD1616wtest:0.75

  • 2SD1616代换 2SD1616用什么型号代替:2SC3328,2SC4485,2SC4486,2SD592A,2SD667,2SD1207,2SD1293M,2SD1490,2SD1835,

型号 功能描述 生产厂家&企业 LOGO 操作
2SD1616

NPN EPITAXIAL SILICON TRANSISTOR

NPN EPITAXIAL SILICON TRANSISTOR DESCRIPTION * Audio frequency power amplifier * Medium speed switching

UTCUnisonic Technologies

友顺友顺科技股份有限公司

UTC
2SD1616

NPN SILICON TRANSISTORS

DESCRIPTION The 2SD1616/2SD1616A are designed for use in driver and output stages of AF amplifier, general purpose application.

NECRenesas Electronics America

瑞萨日本瑞萨电子株式会社

NEC
2SD1616

NPN Transistors

NPN Transistors P/b Lead(Pb)-Free

WEITRON

Weitron Technology

WEITRON
2SD1616

TRANSISTOR (NPN)

TRANSISTOR (NPN) FEATURE Power dissipation PCM: 0.75 W (Tamb=25℃) Collector current ICM: 1 A Collector-base voltage V(BR)CBO: 60 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃

WINNERJOINSHENZHEN YONGERJIA INDUSTRY CO.,LTD

永而佳深圳市永而佳实业有限公司

WINNERJOIN
2SD1616

TO-92 Plastic-Encapsulate Transistors

TRANSISTOR (NPN) FEATURES ● Low VCE(sat) ● Complementary Transistor with The 2SB1116

JIANGSUJiangsu Changjiang Electronics Technology Co., Ltd

长电科技江苏长电科技股份有限公司

JIANGSU
2SD1616

NPN Silicon Transistor

NPN Silicon Transistor The 2SD1616 / 2SD1616A are designed for use in driver and output stages of AF amplifier general purpose application. The transistor is subdivided into three groups R, O and Y, according to its DC current gain On special request, these transistors can be manufactured i

SEMTECH_ELECSEMTECH ELECTRONICS LTD.

先之科半导体先之科半导体科技(东莞)有限公司

SEMTECH_ELEC
2SD1616

SILICON TRANSISTORS

NPN SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS AND MID-SPEED SWITCHING FEATURES • Low VCE(sat): VCE(sat) = 0.15 V TYP. (IC = 1.0 A, IB = 50 mA) • Large PT in small dimension with versatility PT = 0.75 W, VCEO = 50/60 V, IC(DC) = 1.0 A • Complementary transistor with t

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

RENESAS
2SD1616

TO-92 Plastic-Encapsulate Transistors

FEATURES Low VCE(sat) Complementary Transistor with The 2SB1116

DGNJDZNanjing International Group Co

南晶电子东莞市南晶电子有限公司

DGNJDZ
2SD1616

NPN EPITAXIAL SILICON TRANSISTOR

文件:184.47 Kbytes Page:4 Pages

UTCUnisonic Technologies

友顺友顺科技股份有限公司

UTC
2SD1616

NPN EPITAXIAL SILICON TRANSISTOR

文件:66.6 Kbytes Page:4 Pages

UTCUnisonic Technologies

友顺友顺科技股份有限公司

UTC

NPN Transistors

NPN Transistors P/b Lead(Pb)-Free

WEITRON

Weitron Technology

WEITRON

NPN SILICON TRANSISTORS

DESCRIPTION The 2SD1616/2SD1616A are designed for use in driver and output stages of AF amplifier, general purpose application.

NECRenesas Electronics America

瑞萨日本瑞萨电子株式会社

NEC

NPN EPITAXIAL SILICON TRANSISTOR

NPN EPITAXIAL SILICON TRANSISTOR DESCRIPTION * Audio frequency power amplifier * Medium speed switching

UTCUnisonic Technologies

友顺友顺科技股份有限公司

UTC

TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR

Description Designed for audio frequency power amplifier and medium-speed switching applications.

DCCOM

Dc Components

DCCOM

TO-92 Plastic-Encapsulate Transistors

TRANSISTOR (NPN) FEATURE Power dissipation

DAYADaya Electric Group Co., Ltd.

大亚电器集团大亚电器集团有限公司

DAYA

NPN Plastic-Encapsulated Transistor

FEATURES • Power dissipation

SECOSSeCoS Halbleitertechnologie GmbH

喜可士喜可士股份有限公司

SECOS

NPN SILICON TRANSISTOR

DESCRIPTION 2SD1616A is NPN silicon planar transistor designed for use in driver and output stages of AF amplifier, general purpose application.

MICRO-ELECTRONICS

Micro Electronics

MICRO-ELECTRONICS

SILICON TRANSISTORS

NPN SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS AND MID-SPEED SWITCHING FEATURES • Low VCE(sat): VCE(sat) = 0.15 V TYP. (IC = 1.0 A, IB = 50 mA) • Large PT in small dimension with versatility PT = 0.75 W, VCEO = 50/60 V, IC(DC) = 1.0 A • Complementary transistor with t

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

RENESAS

SOT-89-3L Plastic-Encapsulate Transistors

FEATURES Low collector saturation voltage High break down voltage High total power dissipation

DGNJDZNanjing International Group Co

南晶电子东莞市南晶电子有限公司

DGNJDZ

TO-92 Plastic-Encapsulate Transistors

FEA TURE Power dissipation

DGNJDZNanjing International Group Co

南晶电子东莞市南晶电子有限公司

DGNJDZ

SOT-89-3L Plastic-Encapsulate Transistors

TRANSISTOR(NPN) FEATURES ● Low collector saturation voltage ● High break down voltage ● High total power dissipation

JIANGSUJiangsu Changjiang Electronics Technology Co., Ltd

长电科技江苏长电科技股份有限公司

JIANGSU

TRANSISTOR (NPN)

FEATURE Power dissipation PCM: 0.75 W (Tamb=25℃) Collector current ICM: 1 A Collector-base voltage V(BR)CBO: 120 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃

WINNERJOINSHENZHEN YONGERJIA INDUSTRY CO.,LTD

永而佳深圳市永而佳实业有限公司

WINNERJOIN

TRANSISTOR (NPN)

TRANSISTOR (NPN) FEATURE Power dissipation

KOOCHIN

SHENZHEN KOO CHIN ELECTRONICS CO., LTD.

KOOCHIN

TO-92 Plastic-Encapsulate Transistors

FEA TURE Power dissipation

DGNJDZNanjing International Group Co

南晶电子东莞市南晶电子有限公司

DGNJDZ

TO-92 Plastic-Encapsulate Transistors

FEA TURE Power dissipation

DGNJDZNanjing International Group Co

南晶电子东莞市南晶电子有限公司

DGNJDZ

TO-92 Plastic-Encapsulate Transistors

FEATURES Low VCE(sat) Complementary Transistor with The 2SB1116

DGNJDZNanjing International Group Co

南晶电子东莞市南晶电子有限公司

DGNJDZ

NPN EPITAXIAL SILICON TRANSISTOR

文件:66.6 Kbytes Page:4 Pages

UTCUnisonic Technologies

友顺友顺科技股份有限公司

UTC

NPN EPITAXIAL SILICON TRANSISTOR

文件:184.47 Kbytes Page:4 Pages

UTCUnisonic Technologies

友顺友顺科技股份有限公司

UTC

NPN EPITAXIAL SILICON TRANSISTOR

文件:66.6 Kbytes Page:4 Pages

UTCUnisonic Technologies

友顺友顺科技股份有限公司

UTC

NPN Plastic-Encapsulated Transistor

文件:346.75 Kbytes Page:2 Pages

SECOSSeCoS Halbleitertechnologie GmbH

喜可士喜可士股份有限公司

SECOS

NPN EPITAXIAL SILICON TRANSISTOR

文件:66.6 Kbytes Page:4 Pages

UTCUnisonic Technologies

友顺友顺科技股份有限公司

UTC

NPN EPITAXIAL SILICON TRANSISTOR

文件:66.6 Kbytes Page:4 Pages

UTCUnisonic Technologies

友顺友顺科技股份有限公司

UTC

NPN EPITAXIAL SILICON TRANSISTOR

文件:66.6 Kbytes Page:4 Pages

UTCUnisonic Technologies

友顺友顺科技股份有限公司

UTC

NPN EPITAXIAL SILICON TRANSISTOR

文件:66.6 Kbytes Page:4 Pages

UTCUnisonic Technologies

友顺友顺科技股份有限公司

UTC

NPN EPITAXIAL SILICON TRANSISTOR

文件:66.6 Kbytes Page:4 Pages

UTCUnisonic Technologies

友顺友顺科技股份有限公司

UTC

NPN EPITAXIAL SILICON TRANSISTOR

文件:66.6 Kbytes Page:4 Pages

UTCUnisonic Technologies

友顺友顺科技股份有限公司

UTC

NPN EPITAXIAL SILICON TRANSISTOR

文件:66.6 Kbytes Page:4 Pages

UTCUnisonic Technologies

友顺友顺科技股份有限公司

UTC

NPN EPITAXIAL SILICON TRANSISTOR

文件:66.6 Kbytes Page:4 Pages

UTCUnisonic Technologies

友顺友顺科技股份有限公司

UTC

NPN EPITAXIAL SILICON TRANSISTOR

文件:66.6 Kbytes Page:4 Pages

UTCUnisonic Technologies

友顺友顺科技股份有限公司

UTC

NPN EPITAXIAL SILICON TRANSISTOR

文件:66.6 Kbytes Page:4 Pages

UTCUnisonic Technologies

友顺友顺科技股份有限公司

UTC

NPN EPITAXIAL SILICON TRANSISTOR

文件:66.6 Kbytes Page:4 Pages

UTCUnisonic Technologies

友顺友顺科技股份有限公司

UTC

NPN EPITAXIAL SILICON TRANSISTOR

文件:66.6 Kbytes Page:4 Pages

UTCUnisonic Technologies

友顺友顺科技股份有限公司

UTC

NPN EPITAXIAL SILICON TRANSISTOR

文件:66.6 Kbytes Page:4 Pages

UTCUnisonic Technologies

友顺友顺科技股份有限公司

UTC

NPN EPITAXIAL SILICON TRANSISTOR

文件:66.6 Kbytes Page:4 Pages

UTCUnisonic Technologies

友顺友顺科技股份有限公司

UTC

NPN EPITAXIAL SILICON TRANSISTOR

文件:66.6 Kbytes Page:4 Pages

UTCUnisonic Technologies

友顺友顺科技股份有限公司

UTC

NPN EPITAXIAL SILICON TRANSISTOR

文件:66.6 Kbytes Page:4 Pages

UTCUnisonic Technologies

友顺友顺科技股份有限公司

UTC

NPN EPITAXIAL SILICON TRANSISTOR

文件:184.47 Kbytes Page:4 Pages

UTCUnisonic Technologies

友顺友顺科技股份有限公司

UTC

NPN EPITAXIAL SILICON TRANSISTOR

文件:184.47 Kbytes Page:4 Pages

UTCUnisonic Technologies

友顺友顺科技股份有限公司

UTC

NPN EPITAXIAL SILICON TRANSISTOR

文件:184.47 Kbytes Page:4 Pages

UTCUnisonic Technologies

友顺友顺科技股份有限公司

UTC

NPN EPITAXIAL SILICON TRANSISTOR

文件:184.47 Kbytes Page:4 Pages

UTCUnisonic Technologies

友顺友顺科技股份有限公司

UTC

NPN EPITAXIAL SILICON TRANSISTOR

文件:184.47 Kbytes Page:4 Pages

UTCUnisonic Technologies

友顺友顺科技股份有限公司

UTC

NPN EPITAXIAL SILICON TRANSISTOR

文件:66.6 Kbytes Page:4 Pages

UTCUnisonic Technologies

友顺友顺科技股份有限公司

UTC

NPN EPITAXIAL SILICON TRANSISTOR

文件:66.6 Kbytes Page:4 Pages

UTCUnisonic Technologies

友顺友顺科技股份有限公司

UTC

NPN EPITAXIAL SILICON TRANSISTOR

文件:66.6 Kbytes Page:4 Pages

UTCUnisonic Technologies

友顺友顺科技股份有限公司

UTC

NPN EPITAXIAL SILICON TRANSISTOR

文件:66.6 Kbytes Page:4 Pages

UTCUnisonic Technologies

友顺友顺科技股份有限公司

UTC

NPN EPITAXIAL SILICON TRANSISTOR

文件:66.6 Kbytes Page:4 Pages

UTCUnisonic Technologies

友顺友顺科技股份有限公司

UTC

NPN EPITAXIAL SILICON TRANSISTOR

文件:66.6 Kbytes Page:4 Pages

UTCUnisonic Technologies

友顺友顺科技股份有限公司

UTC

NPN EPITAXIAL SILICON TRANSISTOR

文件:66.6 Kbytes Page:4 Pages

UTCUnisonic Technologies

友顺友顺科技股份有限公司

UTC

NPN EPITAXIAL SILICON TRANSISTOR

文件:66.6 Kbytes Page:4 Pages

UTCUnisonic Technologies

友顺友顺科技股份有限公司

UTC

NPN EPITAXIAL SILICON TRANSISTOR

文件:66.6 Kbytes Page:4 Pages

UTCUnisonic Technologies

友顺友顺科技股份有限公司

UTC

2SD1616产品属性

  • 类型

    描述

  • 型号

    2SD1616

  • 制造商

    Renesas Electronics

  • 功能描述

    NPN

  • 制造商

    Renesas Electronics

  • 功能描述

    NPN Bulk

更新时间:2025-8-6 14:19:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
CJ/长电
24+
TO-92
9000
只做原装,欢迎询价,量大价优
CJ
24+
con
909
现货常备产品原装可到京北通宇商城查价格
CJ/长电
25+
SOT-89
32360
CJ/长电全新特价2SD1616A即刻询购立享优惠#长期有货
UTC/友顺
2022+
SOT-89-3AB3
8000
只做原装支持实单,有单必成。
UTC/友顺
2023+
SOT-89
9865
100%原厂代理库存,正品全新现货
UTC/友顺
1950+
TO-92
4856
只做原装正品现货!或订货假一赔十!
UTC/友顺
2011+
TO-92
700
只做原装正品
UTC
15+
SOP-89
11000
一级代理,专注军工、汽车、医疗、工业、新能源、电力
UTC/友顺
2223+
TO-92
26800
只做原装正品假一赔十为客户做到零风险
NEC
24+
4231
公司原厂原装现货假一罚十!特价出售!强势库存!

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2SD1616数据表相关新闻