2SD1616晶体管资料
2SD1616别名：2SD1616三极管、2SD1616晶体管、2SD1616晶体三极管
2SD1616生产厂家：日本日电公司
2SD1616制作材料：Si-NPN
2SD1616性质：LO.SAT
2SD1616封装形式：贴片封装
2SD1616极限工作电压：60V
2SD1616最大电流允许值：1A
2SD1616最大工作频率：160MHZ
2SD1616引脚数：3
2SD1616最大耗散功率：0.75W
2SD1616放大倍数：
2SD1616图片代号：A-20
2SD1616vtest：60
2SD1616htest：160000000
- 2SD1616atest：1
2SD1616wtest：0.75
2SD1616代换 2SD1616用什么型号代替：2SC3328,2SC4485,2SC4486,2SD592A,2SD667,2SD1207,2SD1293M,2SD1490,2SD1835,
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
2SD1616 | NPN EPITAXIAL SILICON TRANSISTOR NPN EPITAXIAL SILICON TRANSISTOR DESCRIPTION * Audio frequency power amplifier * Medium speed switching | UTC 友顺 |   | |
2SD1616 | NPN SILICON TRANSISTORS DESCRIPTION The 2SD1616/2SD1616A are designed for use in driver and output stages of AF amplifier, general purpose application. | NEC 瑞萨 | | |
2SD1616 | NPN Transistors NPN Transistors P/b Lead(Pb)-Free | WEITRON | | |
2SD1616 | NPN Silicon Transistor NPN Silicon Transistor The 2SD1616 / 2SD1616A are designed for use in driver and output stages of AF amplifier general purpose application. The transistor is subdivided into three groups R, O and Y, according to its DC current gain On special request, these transistors can be manufactured i | SEMTECH_ELEC 先之科半导体 | | |
2SD1616 | SILICON TRANSISTORS NPN SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS AND MID-SPEED SWITCHING FEATURES • Low VCE(sat): VCE(sat) = 0.15 V TYP. (IC = 1.0 A, IB = 50 mA) • Large PT in small dimension with versatility PT = 0.75 W, VCEO = 50/60 V, IC(DC) = 1.0 A • Complementary transistor with t | RENESAS 瑞萨 | | |
2SD1616 | TRANSISTOR (NPN) TRANSISTOR (NPN) FEATURE Power dissipation PCM: 0.75 W (Tamb=25℃) Collector current ICM: 1 A Collector-base voltage V(BR)CBO: 60 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃ | WINNERJOIN 永而佳 | | |
2SD1616 | TO-92 Plastic-Encapsulate Transistors TRANSISTOR (NPN) FEATURES ● Low VCE(sat) ● Complementary Transistor with The 2SB1116 | JIANGSU 长电科技 | | |
2SD1616 | 丝印代码：D1616；TO-92 Plastic-Encapsulate Transistors FEATURES Low VCE(sat) Complementary Transistor with The 2SB1116 | DGNJDZ 南晶电子 | | |
2SD1616 | TRANSISTOR(NPN) | RM TECHNOLOGY | | |
2SD1616 | Bipolar Transistor | UTC 友顺 | | |
2SD1616 | 晶体管 | JSCJ 长晶科技 | | |
2SD1616 | NPN EPITAXIAL SILICON TRANSISTOR 文件：184.47 Kbytes Page：4 Pages | UTC 友顺 | | |
2SD1616 | NPN EPITAXIAL SILICON TRANSISTOR 文件：66.6 Kbytes Page：4 Pages | UTC 友顺 | | |
NPN Transistors NPN Transistors P/b Lead(Pb)-Free | WEITRON | | ||
NPN SILICON TRANSISTORS DESCRIPTION The 2SD1616/2SD1616A are designed for use in driver and output stages of AF amplifier, general purpose application. | NEC 瑞萨 | | ||
NPN EPITAXIAL SILICON TRANSISTOR NPN EPITAXIAL SILICON TRANSISTOR DESCRIPTION * Audio frequency power amplifier * Medium speed switching | UTC 友顺 | | ||
TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR Description Designed for audio frequency power amplifier and medium-speed switching applications. | DCCOM 道全 | | ||
TO-92 Plastic-Encapsulate Transistors TRANSISTOR (NPN) FEATURE Power dissipation | DAYA 大亚电器 | | ||
NPN Plastic-Encapsulated Transistor FEATURES • Power dissipation | SECOS 喜可士 | | ||
NPN SILICON TRANSISTOR DESCRIPTION 2SD1616A is NPN silicon planar transistor designed for use in driver and output stages of AF amplifier, general purpose application. | MICRO-ELECTRONICS | | ||
SILICON TRANSISTORS NPN SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS AND MID-SPEED SWITCHING FEATURES • Low VCE(sat): VCE(sat) = 0.15 V TYP. (IC = 1.0 A, IB = 50 mA) • Large PT in small dimension with versatility PT = 0.75 W, VCEO = 50/60 V, IC(DC) = 1.0 A • Complementary transistor with t | RENESAS 瑞萨 | | ||
丝印代码：1616A；SOT-89-3L Plastic-Encapsulate Transistors FEATURES Low collector saturation voltage High break down voltage High total power dissipation | DGNJDZ 南晶电子 | | ||
丝印代码：D1616A；TO-92 Plastic-Encapsulate Transistors FEA TURE Power dissipation | DGNJDZ 南晶电子 | | ||
SOT-89-3L Plastic-Encapsulate Transistors TRANSISTOR（NPN） FEATURES ● Low collector saturation voltage ● High break down voltage ● High total power dissipation | JIANGSU 长电科技 | | ||
TRANSISTOR (NPN) FEATURE Power dissipation PCM: 0.75 W (Tamb=25℃) Collector current ICM: 1 A Collector-base voltage V(BR)CBO: 120 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃ | WINNERJOIN 永而佳 | | ||
TRANSISTOR (NPN) TRANSISTOR (NPN) FEATURE Power dissipation | KOOCHIN 灏展电子 | | ||
TO-92 Plastic-Encapsulate Transistors FEA TURE Power dissipation | DGNJDZ 南晶电子 | | ||
丝印代码：D1616A；TO-92 Plastic-Encapsulate Transistors FEA TURE Power dissipation | DGNJDZ 南晶电子 | | ||
丝印代码：D1616；TO-92 Plastic-Encapsulate Transistors FEATURES Low VCE(sat) Complementary Transistor with The 2SB1116 | DGNJDZ 南晶电子 | | ||
NPN EPITAXIAL SILICON TRANSISTOR 文件：66.6 Kbytes Page：4 Pages | UTC 友顺 | | ||
NPN EPITAXIAL SILICON TRANSISTOR 文件：184.47 Kbytes Page：4 Pages | UTC 友顺 | | ||
NPN EPITAXIAL SILICON TRANSISTOR 文件：66.6 Kbytes Page：4 Pages | UTC 友顺 | | ||
NPN Plastic-Encapsulated Transistor 文件：346.75 Kbytes Page：2 Pages | SECOS 喜可士 | | ||
NPN EPITAXIAL SILICON TRANSISTOR 文件：66.6 Kbytes Page：4 Pages | UTC 友顺 | | ||
NPN EPITAXIAL SILICON TRANSISTOR 文件：66.6 Kbytes Page：4 Pages | UTC 友顺 | | ||
NPN EPITAXIAL SILICON TRANSISTOR 文件：66.6 Kbytes Page：4 Pages | UTC 友顺 | | ||
NPN EPITAXIAL SILICON TRANSISTOR 文件：66.6 Kbytes Page：4 Pages | UTC 友顺 | | ||
NPN EPITAXIAL SILICON TRANSISTOR 文件：66.6 Kbytes Page：4 Pages | UTC 友顺 | | ||
NPN EPITAXIAL SILICON TRANSISTOR 文件：66.6 Kbytes Page：4 Pages | UTC 友顺 | | ||
NPN EPITAXIAL SILICON TRANSISTOR 文件：66.6 Kbytes Page：4 Pages | UTC 友顺 | | ||
NPN EPITAXIAL SILICON TRANSISTOR 文件：66.6 Kbytes Page：4 Pages | UTC 友顺 | | ||
NPN EPITAXIAL SILICON TRANSISTOR 文件：66.6 Kbytes Page：4 Pages | UTC 友顺 | | ||
NPN EPITAXIAL SILICON TRANSISTOR 文件：66.6 Kbytes Page：4 Pages | UTC 友顺 | | ||
NPN EPITAXIAL SILICON TRANSISTOR 文件：66.6 Kbytes Page：4 Pages | UTC 友顺 | | ||
NPN EPITAXIAL SILICON TRANSISTOR 文件：66.6 Kbytes Page：4 Pages | UTC 友顺 | | ||
NPN EPITAXIAL SILICON TRANSISTOR 文件：66.6 Kbytes Page：4 Pages | UTC 友顺 | | ||
NPN EPITAXIAL SILICON TRANSISTOR 文件：66.6 Kbytes Page：4 Pages | UTC 友顺 | | ||
NPN EPITAXIAL SILICON TRANSISTOR 文件：66.6 Kbytes Page：4 Pages | UTC 友顺 | | ||
NPN EPITAXIAL SILICON TRANSISTOR 文件：66.6 Kbytes Page：4 Pages | UTC 友顺 | | ||
NPN EPITAXIAL SILICON TRANSISTOR 文件：184.47 Kbytes Page：4 Pages | UTC 友顺 | | ||
NPN EPITAXIAL SILICON TRANSISTOR 文件：184.47 Kbytes Page：4 Pages | UTC 友顺 | | ||
NPN EPITAXIAL SILICON TRANSISTOR 文件：184.47 Kbytes Page：4 Pages | UTC 友顺 | | ||
NPN EPITAXIAL SILICON TRANSISTOR 文件：184.47 Kbytes Page：4 Pages | UTC 友顺 | | ||
NPN EPITAXIAL SILICON TRANSISTOR 文件：184.47 Kbytes Page：4 Pages | UTC 友顺 | | ||
NPN EPITAXIAL SILICON TRANSISTOR 文件：66.6 Kbytes Page：4 Pages | UTC 友顺 | | ||
NPN EPITAXIAL SILICON TRANSISTOR 文件：66.6 Kbytes Page：4 Pages | UTC 友顺 | | ||
NPN EPITAXIAL SILICON TRANSISTOR 文件：66.6 Kbytes Page：4 Pages | UTC 友顺 | | ||
NPN EPITAXIAL SILICON TRANSISTOR 文件：66.6 Kbytes Page：4 Pages | UTC 友顺 | | ||
NPN EPITAXIAL SILICON TRANSISTOR 文件：66.6 Kbytes Page：4 Pages | UTC 友顺 | | ||
NPN EPITAXIAL SILICON TRANSISTOR 文件：66.6 Kbytes Page：4 Pages | UTC 友顺 | |
2SD1616产品属性
- 类型
描述
- VCEO (V)：
50
- hFE min.：
135
- hFE max.：
600
- Pc (W)：
0.75
- Production Status：
EOL
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
CJ/长电 |
25+ |
SOT-89 |
32360 |
CJ/长电全新特价2SD1616A即刻询购立享优惠#长期有货 |
|||
CJ/长电 |
2450+ |
SOT-23 |
9850 |
只做原厂原装正品现货或订货假一赔十! |
|||
NEC |
24+ |
4231 |
公司原厂原装现货假一罚十!特价出售!强势库存! |
||||
SOT-89 |
23+ |
NA |
15659 |
振宏微专业只做正品,假一罚百! |
|||
UTC/友顺 |
25+ |
明嘉莱只做原装正品现货 |
2510000 |
TO-92 |
|||
CJ/长电 |
21+ |
SOT-89 |
30000 |
百域芯优势 实单必成 可开13点增值税发票 |
|||
NEC |
25+ |
5000 |
公司现货库存 |
||||
长电 |
25+23+ |
TO-92 |
24867 |
绝对原装正品全新进口深圳现货 |
|||
24+ |
TO-92 |
50000 |
|||||
NEC |
24+ |
TO-92 |
6980 |
原装现货,可开13%税票 |
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2SD1616规格书下载地址
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2SD1616数据表相关新闻
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2023-1-302SC5826中文资料库
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2019-2-152SC945_2SC945晶体管_2SC945中文资料_2SC945代换
2SC945、2SC945晶体管、2SC945中文资料、2SC945代换、c945可以用什么代替、c945用什么型号代替、2SC945配对管、2SC945放大倍数、2SC945品牌、C945、C945三极管、C945晶体管、C945晶体三极管、2SC945三极管、2SC945晶体管、2SC945晶体三极管
2018-12-19
DdatasheetPDF页码索引
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