2SC413晶体管资料
2SC413别名：2SC413三极管、2SC413晶体管、2SC413晶体三极管
2SC413生产厂家：日本冲电气工业股份公司
2SC413制作材料：Si-NPN
2SC413性质：射频/高频放大 （HF）_开关管 （S）_功率放大 （L）
2SC413封装形式：直插封装
2SC413极限工作电压：60V
2SC413最大电流允许值：1.5A
2SC413最大工作频率：180MHZ
2SC413引脚数：3
2SC413最大耗散功率：20W
2SC413放大倍数：
2SC413图片代号：D-112
2SC413vtest：60
2SC413htest：180000000
- 2SC413atest：1.5
2SC413wtest：20
2SC413代换 2SC413用什么型号代替：BD137,BD228,BD377,2SD1177,2SD1178,3DA4B,
2SC413价格
参考价格：￥12.1456
型号：2SC4131 品牌：Sanken 备注：这里有2SC413多少钱，2026年最近7天走势，今日出价，今日竞价，2SC413批发/采购报价，2SC413行情走势销售排行榜，2SC413报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
Silicon NPN Epitaxial Planar Transistor(Switching Regulator and General Purpose) Silicon NPN Epitaxial Planar Transistor (High Voltage and High Speed Switchihg Transistor) Application : Switching Regulator and General Purpose. | SANKEN 三垦 |   | ||
Silicon NPN Power Transistors DESCRIPTION • With TO-220F package • High voltage. • High speed switching APPLICATIONS • For switching regulator and general purpose applications | ISC 无锡固电 | | ||
Silicon NPN Power Transistors DESCRIPTION • With TO-220F package • High voltage. • High speed switching APPLICATIONS • For switching regulator and general purpose applications | SAVANTIC | | ||
Silicon NPN Power Transistors DESCRIPTION · With TO-3PML package ·Low collector saturation voltage APPLICATIONS ·For chopper regulator,switch and general purpose applications | SAVANTIC | | ||
Silicon NPN Epitaxial Planar Transistor(DC-DC Converter, Emergency Lighting Inverter and General Purpose) Application : DC-DC Converter, Emergency Lighting Inverter and General Purpose | SANKEN 三垦 | | ||
isc Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage-: V(BR)CEO= 50V(Min) ·Low Collector Saturation Voltage-: VCE(sat)= 0.5V(Max)@ IC= 5A APPLICATIONS ·Designed for DC-DC converter, emergency lighting inverter and general purpose applications | ISC 无锡固电 | | ||
双极型晶体管 硅 NPN 平面外延型三极管 ・集电极-发射极之间的饱和电压低。; | SANKEN 三垦 | | ||
NPN Epitaxial Planar Silicon Transistors Features High breakdown voltage Low collector output capacitance High transition frequency Ft=80MHz) | KEXIN 科信电子 | | ||
丝印代码：PQR；Power Transistor Power Transistor (-120V, -1.5A) 2SB1236 / 2SB1186 Power Transistor (120V, 1.5A) 2SC4132 / 2SD1857 / 2SD2343 / 2SD1763 | ROHM 罗姆 | | ||
丝印代码：T100；Power Transistor (120V, 1.5A) Features 1) High breakdown voltage. (BVCEO = 120V) 2) Low collector output capacitance. (Typ. 20pF at VCB = 10V) 3) High transition frequency. (fT = 80MHz) 4) Complements the 2SB1236. | ROHM 罗姆 | | ||
Power Transistor (120V, 1.5A) Features 1) High breakdown voltage. (BVCEO = 120V) 2) Low collector output capacitance. (Typ. 20pF at VCB = 10V) 3) High transition frequency. (fT = 80MHz) 4) Complements the 2SB1236. | ROHM 罗姆 | | ||
High-Voltage Switching Applications High-Voltage Switching Applications Features · Adoption FBET, MBIT processes. · High breakdown voltage and large current capacity. · Fast switching speed. · Small and slim package permitting 2SA1592/2SC4134-applied sets to be made more compact. Applications · Power supplies, relay drivers, | SANYO 三洋 | | ||
High-Voltage Switching Applications Features ■ High breakdown voltage and large current capacity. ■ Fast switching speed. | KEXIN 科信电子 | | ||
High-Voltage Switching Applications High-Voltage Switching Applications Features · Adoption FBET, MBIT processes. · High breakdown voltage and large current capacity. · Fast switching speed. · Small and slim package permitting 2SA1592/2SC4134-applied sets to be made more compact. Applications · Power supplies, relay drivers, | SANYO 三洋 | | ||
isc Silicon NPN Power Transistor DESCRIPTION • High voltage and large current capacity • Fast-speed switching • Small and slim package permitting 2SC4134-applied sets to be made more compact • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS • Power supp | ISC 无锡固电 | | ||
Bipolar Transistor 100V, 1A, Low VCE(sat), NPN Single TP/TP-FA Features • Adoption FBET, MBIT processes • High breakdown voltage and large current capacity • Fast switching speed • Small and slim package permitting 2SC4134-applied sets to be made more compact Applications • Power supplies, relay drivers, lamp drivers | ONSEMI 安森美半导体 | | ||
Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 100V(Min) ·DC Current Gain- : hFE= 100(Min)@ IC= 0.1A ·Fast switching speed ·Large current capacity APPLICATIONS ·Power amplifier applications ·Driver stage amplifier applications | ISC 无锡固电 | | ||
Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 100V(Min) ·DC Current Gain- : hFE= 100(Min)@ IC= 0.1A ·Fast switching speed ·Large current capacity APPLICATIONS ·Power amplifier applications ·Driver stage amplifier applications | ISC 无锡固电 | | ||
Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 100V(Min) ·DC Current Gain- : hFE= 100(Min)@ IC= 0.1A ·Fast switching speed ·Large current capacity APPLICATIONS ·Power amplifier applications ·Driver stage amplifier applications | ISC 无锡固电 | | ||
Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 100V(Min) ·DC Current Gain- : hFE= 100(Min)@ IC= 0.1A ·Fast switching speed ·Large current capacity APPLICATIONS ·Power amplifier applications ·Driver stage amplifier applications | ISC 无锡固电 | | ||
Bipolar Transistor 100V, 1A, Low VCE(sat), NPN Single TP/TP-FA Features • Adoption FBET, MBIT processes • High breakdown voltage and large current capacity • Fast switching speed • Small and slim package permitting 2SC4134-applied sets to be made more compact Applications • Power supplies, relay drivers, lamp drivers | ONSEMI 安森美半导体 | | ||
Bipolar Transistor 100V, 1A, Low VCE(sat), NPN Single TP/TP-FA Features • Adoption FBET, MBIT processes • High breakdown voltage and large current capacity • Fast switching speed • Small and slim package permitting 2SC4134-applied sets to be made more compact Applications • Power supplies, relay drivers, lamp drivers | ONSEMI 安森美半导体 | | ||
Bipolar Transistor 100V, 1A, Low VCE(sat), NPN Single TP/TP-FA Features • Adoption FBET, MBIT processes • High breakdown voltage and large current capacity • Fast switching speed • Small and slim package permitting 2SC4134-applied sets to be made more compact Applications • Power supplies, relay drivers, lamp drivers | ONSEMI 安森美半导体 | | ||
Bipolar Transistor 100V, 1A, Low VCE(sat), NPN Single TP/TP-FA Features • Adoption FBET, MBIT processes • High breakdown voltage and large current capacity • Fast switching speed • Small and slim package permitting 2SC4134-applied sets to be made more compact Applications • Power supplies, relay drivers, lamp drivers | ONSEMI 安森美半导体 | | ||
isc Silicon NPN Power Transistor DESCRIPTION • High breakdown voltage and large current capacity • Fast switching speed • Small and slim package • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation • Complementary to 2SA1593 APPLICATIONS • Power supplies, re | ISC 无锡固电 | | ||
Bipolar Transistor Adoption of FBET, MBIT processes Features • Adoption of FBET, MBIT processes • High breakdown voltage and large current capacity • Fast switching speed • Small and slim package permitting 2SA1593/2SC4135-applied sets to be made more compact Applications • Power supplies, relay derivers, lamp drivers | ONSEMI 安森美半导体 | | ||
Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 100V(Min) ·DC Current Gain- : hFE= 100(Min)@ IC= 0.1A ·Fast switching speed ·Large current capacity APPLICATIONS ·Power amplifier applications ·Driver stage amplifier applications | ISC 无锡固电 | | ||
Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 100V(Min) ·DC Current Gain- : hFE= 100(Min)@ IC= 0.1A ·Fast switching speed ·Large current capacity APPLICATIONS ·Power amplifier applications ·Driver stage amplifier applications | ISC 无锡固电 | | ||
High-Voltage Switching Applications Features ● High breakdown voltage and large current capacity. ● Fast switching speed. | KEXIN 科信电子 | | ||
High-Voltage Switching Applications High-Voltage Switching Applications Features • Adoption of FBET, MBIT processes. • High breakdown voltage and large current capacity. • Fast switching speed. • Small and slim package permitting 2SA1593/ 2SC4135-applied sets to be made more compact. Applications • Power supplies | SANYO 三洋 | | ||
Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 100V(Min) ·DC Current Gain- : hFE= 100(Min)@ IC= 0.1A ·Fast switching speed ·Large current capacity APPLICATIONS ·Power amplifier applications ·Driver stage amplifier applications | ISC 无锡固电 | | ||
Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 100V(Min) ·DC Current Gain- : hFE= 100(Min)@ IC= 0.1A ·Fast switching speed ·Large current capacity APPLICATIONS ·Power amplifier applications ·Driver stage amplifier applications | ISC 无锡固电 | | ||
Bipolar Transistor Adoption of FBET, MBIT processes Features • Adoption of FBET, MBIT processes • High breakdown voltage and large current capacity • Fast switching speed • Small and slim package permitting 2SA1593/2SC4135-applied sets to be made more compact Applications • Power supplies, relay derivers, lamp drivers | ONSEMI 安森美半导体 | | ||
Bipolar Transistor Adoption of FBET, MBIT processes Features • Adoption of FBET, MBIT processes • High breakdown voltage and large current capacity • Fast switching speed • Small and slim package permitting 2SA1593/2SC4135-applied sets to be made more compact Applications • Power supplies, relay derivers, lamp drivers | ONSEMI 安森美半导体 | | ||
Bipolar Transistor Adoption of FBET, MBIT processes Features • Adoption of FBET, MBIT processes • High breakdown voltage and large current capacity • Fast switching speed • Small and slim package permitting 2SA1593/2SC4135-applied sets to be made more compact Applications • Power supplies, relay derivers, lamp drivers | ONSEMI 安森美半导体 | | ||
Bipolar Transistor Adoption of FBET, MBIT processes Features • Adoption of FBET, MBIT processes • High breakdown voltage and large current capacity • Fast switching speed • Small and slim package permitting 2SA1593/2SC4135-applied sets to be made more compact Applications • Power supplies, relay derivers, lamp drivers | ONSEMI 安森美半导体 | | ||
FOR AUDIO TEMPERATUEE COMPENSATION CIRCUITS Features 1) Very low output-on resistance (Ron). 2) Low capacitance. | ROHM 罗姆 | | ||
Silicon NPN Triple Diffused Planar Transistor(Switching Regulator and General Purpose) Silicon NPN Triple Diffused Planar Transistor (High Voltage and High Speed Switchihg Transistor) Application : Switching Regulator and General Purpose | SANKEN 三垦 | | ||
Silicon NPN Power Transistors DESCRIPTION • With TO-3PN package • High voltage • High speed switching APPLICATIONS • For switching regulator and general purpose applications | SAVANTIC | | ||
isc Silicon NPN Power Transistor DESCRIPTION • High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 400V(Min) • High Switching Speed • High Reliability APPLICATIONS • Designed for switching regulator and general purpose applications. | ISC 无锡固电 | | ||
Silicon NPN Power Transistors DESCRIPTION ·With TO-3PN package ·High voltage ·High speed switching APPLICATIONS ·For switching regulator and general purpose applications | JMNIC 锦美电子 | | ||
Silicon NPN Power Transistors DESCRIPTION ·With TO-3PN package ·High voltage ·High speed switching APPLICATIONS ·For switching regulator and general purpose applications | ISC 无锡固电 | | ||
Silicon NPN Power Transistors DESCRIPTION ·With TO-3PN package ·High voltage ·High speed switching APPLICATIONS ·For switching regulator and general purpose applications | SAVANTIC | | ||
Silicon NPN Triple Diffused Planar Transistor(Switching Regulator and General Purpose) High Voltage and High Speed Switchihg Transistor Application : Switching Regulator and General Purpose | SANKEN 三垦 | | ||
Silicon NPN Power Transistors 文件：247.7 Kbytes Page：4 Pages | SAVANTIC | | ||
Silicon NPN Epitaxial Planar Transistor 文件：35.28 Kbytes Page：1 Pages | SANKEN 三垦 | | ||
Silicon NPN Power Transistors 文件：157.09 Kbytes Page：3 Pages | SAVANTIC | | ||
BJT 双极性三极管 | SPTECH | | ||
Silicon NPN Epitaxial Planar Transistor 文件：34.8 Kbytes Page：1 Pages | SANKEN 三垦 | | ||
三极管 | Sourcechips | | ||
NPN TRANSISTOR 文件：7.84102 Mbytes Page：6 Pages | NIUHANG 纽航电子 | | ||
封装/外壳：TO-243AA 包装：卷带（TR） 描述：TRANS NPN 120V 2A MPT3 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 | ROHM 罗姆 | | ||
封装/外壳：TO-243AA 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：TRANS NPN 120V 2A MPT3 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 | ROHM 罗姆 | | ||
High-Voltage Switching Applications 文件：491.53 Kbytes Page：9 Pages | SANYO 三洋 | | ||
Bipolar Transistor 文件：385.87 Kbytes Page：9 Pages | ONSEMI 安森美半导体 | | ||
Bipolar Transistor 文件：385.87 Kbytes Page：9 Pages | ONSEMI 安森美半导体 | | ||
Bipolar Transistor 文件：385.87 Kbytes Page：9 Pages | ONSEMI 安森美半导体 | | ||
Bipolar Transistor 文件：385.87 Kbytes Page：9 Pages | ONSEMI 安森美半导体 | | ||
High frequency amplifier transistor, RF switching (6V, 50mA) 文件：162.92 Kbytes Page：3 Pages | ROHM 罗姆 | | ||
High frequency amplifier transistor, RF switching (6V, 50mA) 文件：162.92 Kbytes Page：3 Pages | ROHM 罗姆 | |
2SC413产品属性
- 类型
描述
- Configuration：
Single
- Material：
Si
- Maximum Collector Base Voltage：
500V
- Maximum Collector Emitter Saturation Voltage：
0.5@0.6A@3AV
- Maximum Collector Emitter Voltage：
400V
- Maximum DC Collector Current：
7A
- Maximum Emitter Base Voltage：
10V
- Maximum Operating Temperature：
150°C
- Maximum Power Dissipation：
30000mW
- Maximum Transition Frequency：
15(Typ)MHz
- Type：
NPN
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
SANKEN |
22+ |
TO-3P |
20000 |
公司只有原装 品质保证 |
|||
SK |
2450+ |
TO3PF |
9850 |
只做原装正品现货或订货假一赔十! |
|||
ISC |
2020 |
TO-247 |
5 |
原装 |
|||
SK |
2023+ |
TO3PF |
6893 |
十五年行业诚信经营,专注全新正品 |
|||
SANKEN |
25+23+ |
TO-220 |
19634 |
绝对原装正品全新进口深圳现货 |
|||
三肯 |
23+ |
TO-3PF |
5000 |
原厂授权代理,海外优势订货渠道。可提供大量库存,详 |
|||
26+ |
N/A |
48000 |
一级代理-主营优势-实惠价格-不悔选择 |
||||
SANKEN |
25+ |
NA |
880000 |
明嘉莱只做原装正品现货 |
|||
SANYO/三洋 |
20+ |
TO-220 |
1000 |
现货很近!原厂很远!只做原装 |
|||
SPTECH |
2447 |
TO-3PML |
105000 |
30个/管一级代理专营品牌!原装正品,优势现货,长期 |
2SC413规格书下载地址
2SC413参数引脚图相关
- 5000
- 4921
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- 2SC4141
- 2SC4140
- 2SC414
- 2SC4139
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- 2SC4137
- 2SC4136
- 2SC4135
- 2SC4134
- 2SC4133
- 2SC4132
- 2SC4131
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- 2SC4126
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- 2SC4124
- 2SC4123
- 2SC4122
- 2SC4121
- 2SC4120
- 2SC412
- 2SC4119
- 2SC4118
- 2SC4117
- 2SC4116
- 2SC4115S
- 2SC4115
- 2SC4114
- 2SC4113
- 2SC4112
- 2SC4111
- 2SC4110
- 2SC411
- 2SC410A
- 2SC4109
- 2SC4108
- 2SC4107
2SC413数据表相关新闻
2SC4617G-SOT323R-R-TG_UTC代理商
2SC4617G-SOT323R-R-TG_UTC代理商
2023-2-152SC380TM-O
只做原装假一赔十
2020-11-142SC3671-B,T2F(J
产品属性 属性值 搜索类似 制造商: Toshiba 产品种类: 双极晶体管 - 双极结型晶体管(BJT) 系列: 2SC3671 技术: Si 商标: Toshiba 产品类型: BJTs - Bipolar Transistors 子类别: Transistors
2020-11-52SC4617TLR
深圳市科恒伟业电子有限公司 深圳市福田区华强北振兴路101号华匀大厦2栋5楼516 网站 http://www.kehengweiyedz.cn 网站http://www.kehengweiye.com 邮箱：yulin522@126.com 0755-83200050 15817287769 柯先生
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