2SC4134S-TL-E晶体三极管参数引脚图原装现货专卖-IC资料网

您好,欢迎来到114ic资料网！

114ic电子网登录注册

芯片资料

数据手册
丝印反查
库存查询
行业新闻
生产厂家
替换型号
晶体管

精确

位置：首页 > IC中文资料第2107页 > 2SC413

2SC413晶体管资料

2SC413别名：2SC413三极管、2SC413晶体管、2SC413晶体三极管
2SC413生产厂家：日本冲电气工业股份公司
2SC413制作材料：Si-NPN
2SC413性质：射频/高频放大（HF）_开关管（S）_功率放大（L）
2SC413封装形式：直插封装
2SC413极限工作电压：60V
2SC413最大电流允许值：1.5A
2SC413最大工作频率：180MHZ
2SC413引脚数：3
2SC413最大耗散功率：20W
2SC413放大倍数：
2SC413图片代号：D-112
2SC413vtest：60
2SC413htest：180000000
2SC413atest：1.5
2SC413wtest：20

2SC413代换 2SC413用什么型号代替：BD137,BD228,BD377,2SD1177,2SD1178,3DA4B,

2SC413价格

参考价格：￥12.1456

型号：2SC4131 品牌：Sanken 备注：这里有2SC413多少钱，2025年最近7天走势，今日出价，今日竞价，2SC413批发/采购报价，2SC413行情走势销售排行榜，2SC413报价。

型号	功能描述	生产厂家企业	LOGO
2SC4130	Silicon NPN Epitaxial Planar Transistor(Switching Regulator and General Purpose) Silicon NPN Epitaxial Planar Transistor (High Voltage and High Speed Switchihg Transistor) Application : Switching Regulator and General Purpose.	Sanken 三垦	Sanken
2SC4130	Silicon NPN Power Transistors DESCRIPTION • With TO-220F package • High voltage. • High speed switching APPLICATIONS • For switching regulator and general purpose applications	ISC 无锡固电	ISC
2SC4130	Silicon NPN Power Transistors DESCRIPTION • With TO-220F package • High voltage. • High speed switching APPLICATIONS • For switching regulator and general purpose applications	SAVANTIC	SAVANTIC
2SC4131	Silicon NPN Power Transistors DESCRIPTION · With TO-3PML package ·Low collector saturation voltage APPLICATIONS ·For chopper regulator,switch and general purpose applications	SAVANTIC	SAVANTIC
2SC4131	isc Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage-: V(BR)CEO= 50V(Min) ·Low Collector Saturation Voltage-: VCE(sat)= 0.5V(Max)@ IC= 5A APPLICATIONS ·Designed for DC-DC converter, emergency lighting inverter and general purpose applications	ISC 无锡固电	ISC
2SC4131	Silicon NPN Epitaxial Planar Transistor(DC-DC Converter, Emergency Lighting Inverter and General Purpose) Application : DC-DC Converter, Emergency Lighting Inverter and General Purpose	Sanken 三垦	Sanken
2SC4132	Power Transistor Power Transistor (-120V, -1.5A) 2SB1236 / 2SB1186 Power Transistor (120V, 1.5A) 2SC4132 / 2SD1857 / 2SD2343 / 2SD1763	ROHM 罗姆	ROHM
2SC4132	Power Transistor (120V, 1.5A) Features 1) High breakdown voltage. (BVCEO = 120V) 2) Low collector output capacitance. (Typ. 20pF at VCB = 10V) 3) High transition frequency. (fT = 80MHz) 4) Complements the 2SB1236.	ROHM 罗姆	ROHM
2SC4132	NPN Epitaxial Planar Silicon Transistors Features High breakdown voltage Low collector output capacitance High transition frequency Ft=80MHz)	KEXIN 科信电子	KEXIN
2SC4132T100R	Power Transistor (120V, 1.5A) Features 1) High breakdown voltage. (BVCEO = 120V) 2) Low collector output capacitance. (Typ. 20pF at VCB = 10V) 3) High transition frequency. (fT = 80MHz) 4) Complements the 2SB1236.	ROHM 罗姆	ROHM
2SC4134	Bipolar Transistor 100V, 1A, Low VCE(sat), NPN Single TP/TP-FA Features • Adoption FBET, MBIT processes • High breakdown voltage and large current capacity • Fast switching speed • Small and slim package permitting 2SC4134-applied sets to be made more compact Applications • Power supplies, relay drivers, lamp drivers	ONSEMI 安森美半导体	ONSEMI
2SC4134	High-Voltage Switching Applications High-Voltage Switching Applications Features · Adoption FBET, MBIT processes. · High breakdown voltage and large current capacity. · Fast switching speed. · Small and slim package permitting 2SA1592/2SC4134-applied sets to be made more compact. Applications · Power supplies, relay drivers,	SANYO 三洋	SANYO
2SC4134	High-Voltage Switching Applications High-Voltage Switching Applications Features · Adoption FBET, MBIT processes. · High breakdown voltage and large current capacity. · Fast switching speed. · Small and slim package permitting 2SA1592/2SC4134-applied sets to be made more compact. Applications · Power supplies, relay drivers,	SANYO 三洋	SANYO
2SC4134	isc Silicon NPN Power Transistor DESCRIPTION • High voltage and large current capacity • Fast-speed switching • Small and slim package permitting 2SC4134-applied sets to be made more compact • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS • Power supp	ISC 无锡固电	ISC
2SC4134	Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 100V(Min) ·DC Current Gain- : hFE= 100(Min)@ IC= 0.1A ·Fast switching speed ·Large current capacity APPLICATIONS ·Power amplifier applications ·Driver stage amplifier applications	ISC 无锡固电	ISC
2SC4134	Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 100V(Min) ·DC Current Gain- : hFE= 100(Min)@ IC= 0.1A ·Fast switching speed ·Large current capacity APPLICATIONS ·Power amplifier applications ·Driver stage amplifier applications	ISC 无锡固电	ISC
2SC4134	High-Voltage Switching Applications Features ■ High breakdown voltage and large current capacity. ■ Fast switching speed.	KEXIN 科信电子	KEXIN
2SC4134-251	Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 100V(Min) ·DC Current Gain- : hFE= 100(Min)@ IC= 0.1A ·Fast switching speed ·Large current capacity APPLICATIONS ·Power amplifier applications ·Driver stage amplifier applications	ISC 无锡固电	ISC
2SC4134-252	Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 100V(Min) ·DC Current Gain- : hFE= 100(Min)@ IC= 0.1A ·Fast switching speed ·Large current capacity APPLICATIONS ·Power amplifier applications ·Driver stage amplifier applications	ISC 无锡固电	ISC
2SC4134S-E	Bipolar Transistor 100V, 1A, Low VCE(sat), NPN Single TP/TP-FA Features • Adoption FBET, MBIT processes • High breakdown voltage and large current capacity • Fast switching speed • Small and slim package permitting 2SC4134-applied sets to be made more compact Applications • Power supplies, relay drivers, lamp drivers	ONSEMI 安森美半导体	ONSEMI
2SC4134S-TL-E	Bipolar Transistor 100V, 1A, Low VCE(sat), NPN Single TP/TP-FA Features • Adoption FBET, MBIT processes • High breakdown voltage and large current capacity • Fast switching speed • Small and slim package permitting 2SC4134-applied sets to be made more compact Applications • Power supplies, relay drivers, lamp drivers	ONSEMI 安森美半导体	ONSEMI
2SC4134T-E	Bipolar Transistor 100V, 1A, Low VCE(sat), NPN Single TP/TP-FA Features • Adoption FBET, MBIT processes • High breakdown voltage and large current capacity • Fast switching speed • Small and slim package permitting 2SC4134-applied sets to be made more compact Applications • Power supplies, relay drivers, lamp drivers	ONSEMI 安森美半导体	ONSEMI
2SC4134T-TL-E	Bipolar Transistor 100V, 1A, Low VCE(sat), NPN Single TP/TP-FA Features • Adoption FBET, MBIT processes • High breakdown voltage and large current capacity • Fast switching speed • Small and slim package permitting 2SC4134-applied sets to be made more compact Applications • Power supplies, relay drivers, lamp drivers	ONSEMI 安森美半导体	ONSEMI
2SC4135	Bipolar Transistor Adoption of FBET, MBIT processes Features • Adoption of FBET, MBIT processes • High breakdown voltage and large current capacity • Fast switching speed • Small and slim package permitting 2SA1593/2SC4135-applied sets to be made more compact Applications • Power supplies, relay derivers, lamp drivers	ONSEMI 安森美半导体	ONSEMI
2SC4135	High-Voltage Switching Applications High-Voltage Switching Applications Features • Adoption of FBET, MBIT processes. • High breakdown voltage and large current capacity. • Fast switching speed. • Small and slim package permitting 2SA1593/ 2SC4135-applied sets to be made more compact. Applications • Power supplies	SANYO 三洋	SANYO
2SC4135	isc Silicon NPN Power Transistor DESCRIPTION • High breakdown voltage and large current capacity • Fast switching speed • Small and slim package • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation • Complementary to 2SA1593 APPLICATIONS • Power supplies, re	ISC 无锡固电	ISC
2SC4135	High-Voltage Switching Applications Features ● High breakdown voltage and large current capacity. ● Fast switching speed.	KEXIN 科信电子	KEXIN
2SC4135	Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 100V(Min) ·DC Current Gain- : hFE= 100(Min)@ IC= 0.1A ·Fast switching speed ·Large current capacity APPLICATIONS ·Power amplifier applications ·Driver stage amplifier applications	ISC 无锡固电	ISC
2SC4135	Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 100V(Min) ·DC Current Gain- : hFE= 100(Min)@ IC= 0.1A ·Fast switching speed ·Large current capacity APPLICATIONS ·Power amplifier applications ·Driver stage amplifier applications	ISC 无锡固电	ISC
2SC4135-251	Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 100V(Min) ·DC Current Gain- : hFE= 100(Min)@ IC= 0.1A ·Fast switching speed ·Large current capacity APPLICATIONS ·Power amplifier applications ·Driver stage amplifier applications	ISC 无锡固电	ISC
2SC4135-252	Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 100V(Min) ·DC Current Gain- : hFE= 100(Min)@ IC= 0.1A ·Fast switching speed ·Large current capacity APPLICATIONS ·Power amplifier applications ·Driver stage amplifier applications	ISC 无锡固电	ISC
2SC4135S-E	Bipolar Transistor Adoption of FBET, MBIT processes Features • Adoption of FBET, MBIT processes • High breakdown voltage and large current capacity • Fast switching speed • Small and slim package permitting 2SA1593/2SC4135-applied sets to be made more compact Applications • Power supplies, relay derivers, lamp drivers	ONSEMI 安森美半导体	ONSEMI
2SC4135S-TL-E	Bipolar Transistor Adoption of FBET, MBIT processes Features • Adoption of FBET, MBIT processes • High breakdown voltage and large current capacity • Fast switching speed • Small and slim package permitting 2SA1593/2SC4135-applied sets to be made more compact Applications • Power supplies, relay derivers, lamp drivers	ONSEMI 安森美半导体	ONSEMI
2SC4135T-E	Bipolar Transistor Adoption of FBET, MBIT processes Features • Adoption of FBET, MBIT processes • High breakdown voltage and large current capacity • Fast switching speed • Small and slim package permitting 2SA1593/2SC4135-applied sets to be made more compact Applications • Power supplies, relay derivers, lamp drivers	ONSEMI 安森美半导体	ONSEMI
2SC4135T-TL-E	Bipolar Transistor Adoption of FBET, MBIT processes Features • Adoption of FBET, MBIT processes • High breakdown voltage and large current capacity • Fast switching speed • Small and slim package permitting 2SA1593/2SC4135-applied sets to be made more compact Applications • Power supplies, relay derivers, lamp drivers	ONSEMI 安森美半导体	ONSEMI
2SC4137	FOR AUDIO TEMPERATUEE COMPENSATION CIRCUITS Features 1) Very low output-on resistance (Ron). 2) Low capacitance.	ROHM 罗姆	ROHM
2SC4138	Silicon NPN Triple Diffused Planar Transistor(Switching Regulator and General Purpose) Silicon NPN Triple Diffused Planar Transistor (High Voltage and High Speed Switchihg Transistor) Application : Switching Regulator and General Purpose	Sanken 三垦	Sanken
2SC4138	isc Silicon NPN Power Transistor DESCRIPTION • High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 400V(Min) • High Switching Speed • High Reliability APPLICATIONS • Designed for switching regulator and general purpose applications.	ISC 无锡固电	ISC
2SC4138	Silicon NPN Power Transistors DESCRIPTION • With TO-3PN package • High voltage • High speed switching APPLICATIONS • For switching regulator and general purpose applications	SAVANTIC	SAVANTIC
2SC4139	Silicon NPN Power Transistors DESCRIPTION ·With TO-3PN package ·High voltage ·High speed switching APPLICATIONS ·For switching regulator and general purpose applications	SAVANTIC	SAVANTIC
2SC4139	Silicon NPN Power Transistors DESCRIPTION ·With TO-3PN package ·High voltage ·High speed switching APPLICATIONS ·For switching regulator and general purpose applications	JMNIC 锦美电子	JMNIC
2SC4139	Silicon NPN Triple Diffused Planar Transistor(Switching Regulator and General Purpose) High Voltage and High Speed Switchihg Transistor Application : Switching Regulator and General Purpose	Sanken 三垦	Sanken
2SC4139	Silicon NPN Power Transistors DESCRIPTION ·With TO-3PN package ·High voltage ·High speed switching APPLICATIONS ·For switching regulator and general purpose applications	ISC 无锡固电	ISC
2SC4130	Silicon NPN Power Transistors 文件：247.7 Kbytes Page：4 Pages	SAVANTIC	SAVANTIC
2SC4131	Silicon NPN Power Transistors 文件：157.09 Kbytes Page：3 Pages	SAVANTIC	SAVANTIC
2SC4131	Silicon NPN Epitaxial Planar Transistor 文件：35.28 Kbytes Page：1 Pages	Sanken 三垦	Sanken
2SC4131	BJT 双极性三极管	ETC 知名厂家	ETC
2SC4131_07	Silicon NPN Epitaxial Planar Transistor 文件：34.8 Kbytes Page：1 Pages	Sanken 三垦	Sanken
2SC4131T5TL	三极管	ETC 知名厂家	ETC
2SC4132	NPN Epitaxial Planar Silicon Transistors	XWSEMI 芯微半导体	XWSEMI
2SC4132	NPN TRANSISTOR 文件：7.84102 Mbytes Page：6 Pages	NIUHANG 纽航电子	NIUHANG
2SC4132T100P	封装/外壳：TO-243AA 包装：卷带（TR）描述：TRANS NPN 120V 2A MPT3 分立半导体产品晶体管 - 双极性晶体管（BJT）- 单个	ROHM 罗姆	ROHM
2SC4132T100Q	封装/外壳：TO-243AA 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带描述：TRANS NPN 120V 2A MPT3 分立半导体产品晶体管 - 双极性晶体管（BJT）- 单个	ROHM 罗姆	ROHM
2SC4135	High-Voltage Switching Applications 文件：491.53 Kbytes Page：9 Pages	SANYO 三洋	SANYO
2SC4135S-E	Bipolar Transistor 文件：385.87 Kbytes Page：9 Pages	ONSEMI 安森美半导体	ONSEMI
2SC4135S-TL-E	Bipolar Transistor 文件：385.87 Kbytes Page：9 Pages	ONSEMI 安森美半导体	ONSEMI
2SC4135T-E	Bipolar Transistor 文件：385.87 Kbytes Page：9 Pages	ONSEMI 安森美半导体	ONSEMI
2SC4135T-TL-E	Bipolar Transistor 文件：385.87 Kbytes Page：9 Pages	ONSEMI 安森美半导体	ONSEMI
2SC4137	High frequency amplifier transistor, RF switching (6V, 50mA) 文件：162.92 Kbytes Page：3 Pages	ROHM 罗姆	ROHM
2SC4137_09	High frequency amplifier transistor, RF switching (6V, 50mA) 文件：162.92 Kbytes Page：3 Pages	ROHM 罗姆	ROHM

2SC413产品属性

类型
描述
型号
2SC413
制造商
Panasonic Industrial Company
功能描述
SUB ONLY TRANSISTORPANASONIC

2SC413供应商更多...

更新时间：2025-12-25 12:00:00

IC供应商	芯片型号	品牌	批号	封装	库存	备注	价格
深圳市盈慧通电子有限公司	2SC4134S-TL-E	ONSEMI/安森美	2511	TO-252-3	360000	电子元器件采购降本30%!原厂直采,砍掉中间差价	询价
贸泽芯城（深圳）电子科技有限公司	2SC4134-TL-E	SANYO/三洋	23+	SOT252	73000	原厂授权代理,海外优势订货渠道。可提供大量库存,详	询价
深圳市高捷芯城科技有限公司	2SC4134S-TL-E	onsemi(安森美)	24+	TP-FA	1400	原厂订货渠道,支持BOM配单一站式服务	询价
深圳市得捷芯城科技有限公司	2SC4134S-TL-E	SANYO/三洋	24+	NA/	16373	原装现货,当天可交货,原型号开票	询价
深圳市纳立科技有限公司	2SC4134S-TL-EX		三年内		1983	只做原装正品	询价
深圳市勤思达科技有限公司	2SC4135	SANYO	1415+	TO-252	28500	全新原装正品,优势热卖	询价
艾睿（深圳）半导体有限公司	2SC4135	ROHM/罗姆	2447	TO-252	100500	一级代理专营品牌!原装正品,优势现货,长期排单到货	询价
深圳市安富世纪电子有限公司	2SC4134S-TL-E	SANYO/三洋	23+	TO-252	6000	专注配单,只做原装进口现货	询价
深圳市威尔健半导体有限公司	2SC4134S-TL-E	SANYO/三洋	23+	TO-252	50000	全新原装正品现货,支持订货	询价
富凯科技(深圳）有限公司	2SC4134S-TL-EMOS(场效应管)	SANYO/三洋	24+	TO-252	9000	只做原装，欢迎询价，量大价优	询价

2SC413芯片相关品牌

2SC413规格书下载地址

2SC413参数引脚图相关

2SC413数据表相关新闻

2SC4617G-SOT323R-R-TG_UTC代理商
2SC4617G-SOT323R-R-TG_UTC代理商
2023-2-15
2SC380TM-O
只做原装假一赔十
2020-11-14
2SC3671-B,T2F(J
产品属性属性值搜索类似制造商: Toshiba 产品种类: 双极晶体管 - 双极结型晶体管(BJT) 系列: 2SC3671 技术: Si 商标: Toshiba 产品类型: BJTs - Bipolar Transistors 子类别: Transistors
2020-11-5
2SC4617TLR
深圳市科恒伟业电子有限公司深圳市福田区华强北振兴路101号华匀大厦2栋5楼516 网站 http://www.kehengweiyedz.cn 网站http://www.kehengweiye.com 邮箱：yulin522@126.com 0755-83200050 15817287769 柯先生
2020-4-22
2SC3998中文资料
2SC3998中文资料
2019-2-18
2SC4132T100R中文产品资料库
2SC4132T100R中文产品资料库
2019-2-15

DdatasheetPDF页码索引

P1
P2
P3
P4
P5
P6
P7
P8
P9
P10
P11
P12
P13
P14
P15
P16
P17
P18
P19
P20
P21
P22
P23
P24
P25
P26
P27
P28
P29
P30
P31
P32
P33
P34
P35
P36
P37
P38
P39
P40
P41
P42
P43
P44
P45
P46
P47
P48
P49
P50
P51
P52
P53
P54
P55
P56
P57
P58
P59
P60
P61
P62
P63
P64
P65
P66
P67
P68
P69
P70
P71
P72
P73
P74
P75
P76
P77
P78
P79
P80
P81
P82
P83
P84
P85
P86
P87
P88
P89
P90
P91
P92
P93
P94
P95
P96
P97
P98
P99
P100
P101
P102
P103
P104
P105
P106
P107

您好,欢迎来到114ic资料网！

2SC413晶体管资料

2SC413价格

2SC413产品属性

2SC413供应商更多...

2SC413芯片相关品牌

2SC413规格书下载地址

2SC413参数引脚图相关

2SC413数据表相关新闻

2SC4617G-SOT323R-R-TG_UTC代理商

2SC380TM-O

2SC3671-B,T2F(J

2SC4617TLR

2SC3998中文资料

2SC4132T100R中文产品资料库

DdatasheetPDF页码索引