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2SC413晶体管资料
2SC413别名:2SC413三极管、2SC413晶体管、2SC413晶体三极管
2SC413生产厂家:日本冲电气工业股份公司
2SC413制作材料:Si-NPN
2SC413性质:射频/高频放大 (HF)_开关管 (S)_功率放大 (L)
2SC413封装形式:直插封装
2SC413极限工作电压:60V
2SC413最大电流允许值:1.5A
2SC413最大工作频率:180MHZ
2SC413引脚数:3
2SC413最大耗散功率:20W
2SC413放大倍数:
2SC413图片代号:D-112
2SC413vtest:60
2SC413htest:180000000
- 2SC413atest:1.5
2SC413wtest:20
2SC413代换 2SC413用什么型号代替:BD137,BD228,BD377,2SD1177,2SD1178,3DA4B,
2SC413价格
参考价格:¥12.1456
型号:2SC4131 品牌:Sanken 备注:这里有2SC413多少钱,2025年最近7天走势,今日出价,今日竞价,2SC413批发/采购报价,2SC413行情走势销售排行榜,2SC413报价。型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
---|---|---|---|---|
SiliconNPNEpitaxialPlanarTransistor(SwitchingRegulatorandGeneralPurpose) SiliconNPNEpitaxialPlanarTransistor(HighVoltageandHighSpeedSwitchihgTransistor) Application:SwitchingRegulatorandGeneralPurpose. | SankenSanken electric 三垦三垦电气株式会社 | |||
SiliconNPNPowerTransistors DESCRIPTION •WithTO-220Fpackage •Highvoltage. •Highspeedswitching APPLICATIONS •Forswitchingregulatorandgeneral purposeapplications | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
SiliconNPNPowerTransistors DESCRIPTION •WithTO-220Fpackage •Highvoltage. •Highspeedswitching APPLICATIONS •Forswitchingregulatorandgeneral purposeapplications | SAVANTIC Savantic, Inc. | |||
SiliconNPNPowerTransistors DESCRIPTION ·WithTO-3PMLpackage ·Lowcollectorsaturationvoltage APPLICATIONS ·Forchopperregulator,switchandgeneralpurposeapplications | SAVANTIC Savantic, Inc. | |||
SiliconNPNEpitaxialPlanarTransistor(DC-DCConverter,EmergencyLightingInverterandGeneralPurpose) Application:DC-DCConverter,EmergencyLightingInverterandGeneralPurpose | SankenSanken electric 三垦三垦电气株式会社 | |||
iscSiliconNPNPowerTransistor DESCRIPTION ·Collector-EmitterBreakdownVoltage-:V(BR)CEO=50V(Min) ·LowCollectorSaturationVoltage-:VCE(sat)=0.5V(Max)@IC=5A APPLICATIONS ·DesignedforDC-DCconverter,emergencylightinginverterandgeneralpurposeapplications | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
NPNEpitaxialPlanarSiliconTransistors Features Highbreakdownvoltage Lowcollectoroutputcapacitance HightransitionfrequencyFt=80MHz) | KEXINGuangdong Kexin Industrial Co.,Ltd 科信电子广东科信实业有限公司 | |||
PowerTransistor PowerTransistor(-120V,-1.5A)2SB1236/2SB1186 PowerTransistor(120V,1.5A)2SC4132/2SD1857/2SD2343/2SD1763 | ROHMRohm 罗姆罗姆半导体集团 | |||
PowerTransistor(120V,1.5A) Features 1)Highbreakdownvoltage.(BVCEO=120V) 2)Lowcollectoroutputcapacitance.(Typ.20pFatVCB=10V) 3)Hightransitionfrequency.(fT=80MHz) 4)Complementsthe2SB1236. | ROHMRohm 罗姆罗姆半导体集团 | |||
PowerTransistor(120V,1.5A) Features 1)Highbreakdownvoltage.(BVCEO=120V) 2)Lowcollectoroutputcapacitance.(Typ.20pFatVCB=10V) 3)Hightransitionfrequency.(fT=80MHz) 4)Complementsthe2SB1236. | ROHMRohm 罗姆罗姆半导体集团 | |||
High-VoltageSwitchingApplications High-VoltageSwitchingApplications Features ·AdoptionFBET,MBITprocesses. ·Highbreakdownvoltageandlargecurrentcapacity. ·Fastswitchingspeed. ·Smallandslimpackagepermitting2SA1592/2SC4134-appliedsetstobemademorecompact. Applications ·Powersupplies,relaydrivers, | SANYOSanyo Semicon Device 三洋三洋电机株式会社 | |||
High-VoltageSwitchingApplications Features ■Highbreakdownvoltageandlargecurrentcapacity. ■Fastswitchingspeed. | KEXINGuangdong Kexin Industrial Co.,Ltd 科信电子广东科信实业有限公司 | |||
High-VoltageSwitchingApplications High-VoltageSwitchingApplications Features ·AdoptionFBET,MBITprocesses. ·Highbreakdownvoltageandlargecurrentcapacity. ·Fastswitchingspeed. ·Smallandslimpackagepermitting2SA1592/2SC4134-appliedsetstobemademorecompact. Applications ·Powersupplies,relaydrivers, | SANYOSanyo Semicon Device 三洋三洋电机株式会社 | |||
iscSiliconNPNPowerTransistor DESCRIPTION •Highvoltageandlargecurrentcapacity •Fast-speedswitching •Smallandslimpackagepermitting2SC4134-appliedsetstobemademorecompact •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation APPLICATIONS •Powersupp | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
BipolarTransistor100V,1A,LowVCE(sat),NPNSingleTP/TP-FA Features •AdoptionFBET,MBITprocesses •Highbreakdownvoltageandlargecurrentcapacity •Fastswitchingspeed •Smallandslimpackagepermitting2SC4134-appliedsetstobemademorecompact Applications •Powersupplies,relaydrivers,lampdrivers | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | |||
SiliconNPNPowerTransistor DESCRIPTION ·Collector-EmitterBreakdownVoltage- :V(BR)CEO=100V(Min) ·DCCurrentGain- :hFE=100(Min)@IC=0.1A ·Fastswitchingspeed ·Largecurrentcapacity APPLICATIONS ·Poweramplifierapplications ·Driverstageamplifierapplications | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
SiliconNPNPowerTransistor DESCRIPTION ·Collector-EmitterBreakdownVoltage- :V(BR)CEO=100V(Min) ·DCCurrentGain- :hFE=100(Min)@IC=0.1A ·Fastswitchingspeed ·Largecurrentcapacity APPLICATIONS ·Poweramplifierapplications ·Driverstageamplifierapplications | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
SiliconNPNPowerTransistor DESCRIPTION ·Collector-EmitterBreakdownVoltage- :V(BR)CEO=100V(Min) ·DCCurrentGain- :hFE=100(Min)@IC=0.1A ·Fastswitchingspeed ·Largecurrentcapacity APPLICATIONS ·Poweramplifierapplications ·Driverstageamplifierapplications | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
SiliconNPNPowerTransistor DESCRIPTION ·Collector-EmitterBreakdownVoltage- :V(BR)CEO=100V(Min) ·DCCurrentGain- :hFE=100(Min)@IC=0.1A ·Fastswitchingspeed ·Largecurrentcapacity APPLICATIONS ·Poweramplifierapplications ·Driverstageamplifierapplications | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
BipolarTransistor100V,1A,LowVCE(sat),NPNSingleTP/TP-FA Features •AdoptionFBET,MBITprocesses •Highbreakdownvoltageandlargecurrentcapacity •Fastswitchingspeed •Smallandslimpackagepermitting2SC4134-appliedsetstobemademorecompact Applications •Powersupplies,relaydrivers,lampdrivers | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | |||
BipolarTransistor100V,1A,LowVCE(sat),NPNSingleTP/TP-FA Features •AdoptionFBET,MBITprocesses •Highbreakdownvoltageandlargecurrentcapacity •Fastswitchingspeed •Smallandslimpackagepermitting2SC4134-appliedsetstobemademorecompact Applications •Powersupplies,relaydrivers,lampdrivers | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | |||
BipolarTransistor100V,1A,LowVCE(sat),NPNSingleTP/TP-FA Features •AdoptionFBET,MBITprocesses •Highbreakdownvoltageandlargecurrentcapacity •Fastswitchingspeed •Smallandslimpackagepermitting2SC4134-appliedsetstobemademorecompact Applications •Powersupplies,relaydrivers,lampdrivers | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | |||
BipolarTransistor100V,1A,LowVCE(sat),NPNSingleTP/TP-FA Features •AdoptionFBET,MBITprocesses •Highbreakdownvoltageandlargecurrentcapacity •Fastswitchingspeed •Smallandslimpackagepermitting2SC4134-appliedsetstobemademorecompact Applications •Powersupplies,relaydrivers,lampdrivers | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | |||
iscSiliconNPNPowerTransistor DESCRIPTION •Highbreakdownvoltageandlargecurrentcapacity •Fastswitchingspeed •Smallandslimpackage •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation •Complementaryto2SA1593 APPLICATIONS •Powersupplies,re | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
BipolarTransistorAdoptionofFBET,MBITprocesses Features •AdoptionofFBET,MBITprocesses •Highbreakdownvoltageandlargecurrentcapacity •Fastswitchingspeed •Smallandslimpackagepermitting 2SA1593/2SC4135-appliedsetstobemademorecompact Applications •Powersupplies,relayderivers,lampdrivers | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | |||
SiliconNPNPowerTransistor DESCRIPTION ·Collector-EmitterBreakdownVoltage- :V(BR)CEO=100V(Min) ·DCCurrentGain- :hFE=100(Min)@IC=0.1A ·Fastswitchingspeed ·Largecurrentcapacity APPLICATIONS ·Poweramplifierapplications ·Driverstageamplifierapplications | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
SiliconNPNPowerTransistor DESCRIPTION ·Collector-EmitterBreakdownVoltage- :V(BR)CEO=100V(Min) ·DCCurrentGain- :hFE=100(Min)@IC=0.1A ·Fastswitchingspeed ·Largecurrentcapacity APPLICATIONS ·Poweramplifierapplications ·Driverstageamplifierapplications | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
High-VoltageSwitchingApplications Features ●Highbreakdownvoltageandlargecurrentcapacity. ●Fastswitchingspeed. | KEXINGuangdong Kexin Industrial Co.,Ltd 科信电子广东科信实业有限公司 | |||
High-VoltageSwitchingApplications High-VoltageSwitchingApplications Features •AdoptionofFBET,MBITprocesses. •Highbreakdownvoltageandlargecurrentcapacity. •Fastswitchingspeed. •Smallandslimpackagepermitting2SA1593/2SC4135-appliedsetstobemademorecompact. Applications •Powersupplies | SANYOSanyo Semicon Device 三洋三洋电机株式会社 | |||
SiliconNPNPowerTransistor DESCRIPTION ·Collector-EmitterBreakdownVoltage- :V(BR)CEO=100V(Min) ·DCCurrentGain- :hFE=100(Min)@IC=0.1A ·Fastswitchingspeed ·Largecurrentcapacity APPLICATIONS ·Poweramplifierapplications ·Driverstageamplifierapplications | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
SiliconNPNPowerTransistor DESCRIPTION ·Collector-EmitterBreakdownVoltage- :V(BR)CEO=100V(Min) ·DCCurrentGain- :hFE=100(Min)@IC=0.1A ·Fastswitchingspeed ·Largecurrentcapacity APPLICATIONS ·Poweramplifierapplications ·Driverstageamplifierapplications | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
BipolarTransistorAdoptionofFBET,MBITprocesses Features •AdoptionofFBET,MBITprocesses •Highbreakdownvoltageandlargecurrentcapacity •Fastswitchingspeed •Smallandslimpackagepermitting 2SA1593/2SC4135-appliedsetstobemademorecompact Applications •Powersupplies,relayderivers,lampdrivers | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | |||
BipolarTransistorAdoptionofFBET,MBITprocesses Features •AdoptionofFBET,MBITprocesses •Highbreakdownvoltageandlargecurrentcapacity •Fastswitchingspeed •Smallandslimpackagepermitting 2SA1593/2SC4135-appliedsetstobemademorecompact Applications •Powersupplies,relayderivers,lampdrivers | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | |||
BipolarTransistorAdoptionofFBET,MBITprocesses Features •AdoptionofFBET,MBITprocesses •Highbreakdownvoltageandlargecurrentcapacity •Fastswitchingspeed •Smallandslimpackagepermitting 2SA1593/2SC4135-appliedsetstobemademorecompact Applications •Powersupplies,relayderivers,lampdrivers | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | |||
BipolarTransistorAdoptionofFBET,MBITprocesses Features •AdoptionofFBET,MBITprocesses •Highbreakdownvoltageandlargecurrentcapacity •Fastswitchingspeed •Smallandslimpackagepermitting 2SA1593/2SC4135-appliedsetstobemademorecompact Applications •Powersupplies,relayderivers,lampdrivers | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | |||
FORAUDIOTEMPERATUEECOMPENSATIONCIRCUITS Features 1)Verylowoutput-onresistance(Ron). 2)Lowcapacitance. | ROHMRohm 罗姆罗姆半导体集团 | |||
SiliconNPNTripleDiffusedPlanarTransistor(SwitchingRegulatorandGeneralPurpose) SiliconNPNTripleDiffusedPlanarTransistor(HighVoltageandHighSpeedSwitchihgTransistor) Application:SwitchingRegulatorandGeneralPurpose | SankenSanken electric 三垦三垦电气株式会社 | |||
SiliconNPNPowerTransistors DESCRIPTION •WithTO-3PNpackage •Highvoltage •Highspeedswitching APPLICATIONS •Forswitchingregulatorandgeneralpurposeapplications | SAVANTIC Savantic, Inc. | |||
iscSiliconNPNPowerTransistor DESCRIPTION •HighCollector-EmitterBreakdownVoltage-:V(BR)CEO=400V(Min) •HighSwitchingSpeed •HighReliability APPLICATIONS •Designedforswitchingregulatorandgeneralpurposeapplications. | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
SiliconNPNPowerTransistors DESCRIPTION ·WithTO-3PNpackage ·Highvoltage ·Highspeedswitching APPLICATIONS ·Forswitchingregulatorandgeneralpurposeapplications | JMNICQuanzhou Jinmei Electronic Co.,Ltd. 锦美电子泉州锦美电子有限公司 | |||
SiliconNPNPowerTransistors DESCRIPTION ·WithTO-3PNpackage ·Highvoltage ·Highspeedswitching APPLICATIONS ·Forswitchingregulatorandgeneralpurposeapplications | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
SiliconNPNPowerTransistors DESCRIPTION ·WithTO-3PNpackage ·Highvoltage ·Highspeedswitching APPLICATIONS ·Forswitchingregulatorandgeneralpurposeapplications | SAVANTIC Savantic, Inc. | |||
SiliconNPNTripleDiffusedPlanarTransistor(SwitchingRegulatorandGeneralPurpose) HighVoltageandHighSpeedSwitchihgTransistor Application:SwitchingRegulatorandGeneralPurpose | SankenSanken electric 三垦三垦电气株式会社 | |||
SiliconNPNPowerTransistors 文件:247.7 Kbytes Page:4 Pages | SAVANTIC Savantic, Inc. | |||
SiliconNPNEpitaxialPlanarTransistor 文件:35.28 Kbytes Page:1 Pages | SankenSanken electric 三垦三垦电气株式会社 | |||
SiliconNPNPowerTransistors 文件:157.09 Kbytes Page:3 Pages | SAVANTIC Savantic, Inc. | |||
SiliconNPNEpitaxialPlanarTransistor 文件:34.8 Kbytes Page:1 Pages | SankenSanken electric 三垦三垦电气株式会社 | |||
NPNTRANSISTOR 文件:7.84102 Mbytes Page:6 Pages | NIUHANGDongguan City Niuhang Electronics Co.LTD 纽航电子广东纽航电子科技有限公司 | |||
封装/外壳:TO-243AA 包装:卷带(TR) 描述:TRANS NPN 120V 2A MPT3 分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个 | ETC 知名厂家 | ETC | ||
封装/外壳:TO-243AA 包装:卷带(TR)剪切带(CT)Digi-Reel® 得捷定制卷带 描述:TRANS NPN 120V 2A MPT3 分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个 | ETC 知名厂家 | ETC | ||
High-VoltageSwitchingApplications 文件:491.53 Kbytes Page:9 Pages | SANYOSanyo Semicon Device 三洋三洋电机株式会社 | |||
BipolarTransistor 文件:385.87 Kbytes Page:9 Pages | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | |||
BipolarTransistor 文件:385.87 Kbytes Page:9 Pages | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | |||
BipolarTransistor 文件:385.87 Kbytes Page:9 Pages | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | |||
BipolarTransistor 文件:385.87 Kbytes Page:9 Pages | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | |||
Highfrequencyamplifiertransistor,RFswitching(6V,50mA) 文件:162.92 Kbytes Page:3 Pages | ROHMRohm 罗姆罗姆半导体集团 | |||
Highfrequencyamplifiertransistor,RFswitching(6V,50mA) 文件:162.92 Kbytes Page:3 Pages | ROHMRohm 罗姆罗姆半导体集团 | |||
SiliconNPNTripleDiffusedPlanarTransistor 文件:34.4 Kbytes Page:1 Pages | SankenSanken electric 三垦三垦电气株式会社 | |||
SiliconNPNPowerTransistors 文件:175.36 Kbytes Page:4 Pages | SAVANTIC Savantic, Inc. | |||
SiliconNPNTripleDiffusedPlanarTransistor 文件:33.93 Kbytes Page:1 Pages | SankenSanken electric 三垦三垦电气株式会社 |
2SC413产品属性
- 类型
描述
- 型号
2SC413
- 制造商
Distributed By MCM
- 功能描述
SUB ONLY SANYO TRANSISTORSC-64(TP) 120V 1A 10W BCE
IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
SANYO/三洋 |
24+ |
NA/ |
1000 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
|||
SANKEN |
04+ |
TO-3P |
13 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
SK |
21+ |
TO3PF |
1062 |
只做原装正品,不止网上数量,欢迎电话微信查询! |
|||
ROHM |
1738+ |
TO-220F |
8529 |
科恒伟业!只做原装正品,假一赔十! |
|||
SANKEN |
NA |
8560 |
一级代理 原装正品假一罚十价格优势长期供货 |
||||
SANKEN |
25+ |
NA |
880000 |
明嘉莱只做原装正品现货 |
|||
SANKEN |
23+ |
TO-220F |
10000 |
专做原装正品,假一罚百! |
|||
SANKEN |
25+23+ |
TO-220 |
19634 |
绝对原装正品全新进口深圳现货 |
|||
SANKEN |
23+ |
TO-3P |
30000 |
代理全新原装现货,价格优势 |
|||
SANKEN |
24+ |
1950 |
2SC413规格书下载地址
2SC413参数引脚图相关
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- 2SC4113
- 2SC4112
- 2SC4111
- 2SC4110
- 2SC411
- 2SC410A
- 2SC4109
- 2SC4108
- 2SC4107
2SC413数据表相关新闻
2SC4617G-SOT323R-R-TG_UTC代理商
2SC4617G-SOT323R-R-TG_UTC代理商
2023-2-152SC380TM-O
只做原装假一赔十
2020-11-142SC3671-B,T2F(J
产品属性属性值搜索类似 制造商:Toshiba 产品种类:双极晶体管-双极结型晶体管(BJT) 系列:2SC3671 技术:Si 商标:Toshiba 产品类型:BJTs-BipolarTransistors 子类别:Transistors
2020-11-52SC4617TLR
深圳市科恒伟业电子有限公司深圳市福田区华强北振兴路101号华匀大厦2栋5楼516网站http://www.kehengweiyedz.cn网站http://www.kehengweiye.com邮箱:yulin522@126.com0755-8320005015817287769柯先生
2020-4-222SC3998中文资料
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2019-2-182SC4132T100R中文产品资料库
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2019-2-15
DdatasheetPDF页码索引
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