型号 功能描述 生产厂家&企业 LOGO 操作
2SC4135S-TL-E

Bipolar Transistor Adoption of FBET, MBIT processes

Features • Adoption of FBET, MBIT processes • High breakdown voltage and large current capacity • Fast switching speed • Small and slim package permitting 2SA1593/2SC4135-applied sets to be made more compact Applications • Power supplies, relay derivers, lamp drivers

ONSEMI

安森美半导体

2SC4135S-TL-E

Bipolar Transistor

文件:385.87 Kbytes Page:9 Pages

ONSEMI

安森美半导体

2SC4135S-TL-E

封装/外壳:TO-252-3,DPak(2 引线 + 接片),SC-63 包装:卷带(TR)剪切带(CT)Digi-Reel® 得捷定制卷带 描述:TRANS NPN 100V 2A TPFA 分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个

ONSEMI

安森美半导体

High-Voltage Switching Applications

High-Voltage Switching Applications Features • Adoption of FBET, MBIT processes. • High breakdown voltage and large current capacity. • Fast switching speed. • Small and slim package permitting 2SA1593/ 2SC4135-applied sets to be made more compact. Applications • Power supplies

SANYOSanyo Semicon Device

三洋三洋电机株式会社

High-Voltage Switching Applications

Features ● High breakdown voltage and large current capacity. ● Fast switching speed.

KEXIN

科信电子

isc Silicon NPN Power Transistor

DESCRIPTION • High breakdown voltage and large current capacity • Fast switching speed • Small and slim package • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation • Complementary to 2SA1593 APPLICATIONS • Power supplies, re

ISC

无锡固电

Bipolar Transistor Adoption of FBET, MBIT processes

Features • Adoption of FBET, MBIT processes • High breakdown voltage and large current capacity • Fast switching speed • Small and slim package permitting 2SA1593/2SC4135-applied sets to be made more compact Applications • Power supplies, relay derivers, lamp drivers

ONSEMI

安森美半导体

High-Voltage Switching Applications

文件:491.53 Kbytes Page:9 Pages

SANYOSanyo Semicon Device

三洋三洋电机株式会社

2SC4135S-TL-E产品属性

  • 类型

    描述

  • 型号

    2SC4135S-TL-E

  • 功能描述

    两极晶体管 - BJT BIP NPN 2A 100V

  • RoHS

  • 制造商

    STMicroelectronics

  • 晶体管极性

    PNP 集电极—基极电压

  • VCBO

    集电极—发射极最大电压

  • VCEO

    - 40 V 发射极 - 基极电压

  • VEBO

    - 6 V

  • 增益带宽产品fT

    直流集电极/Base Gain hfe

  • Min

    100 A

  • 安装风格

    SMD/SMT

  • 封装/箱体

    PowerFLAT 2 x 2

更新时间:2025-8-13 16:51:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
三年内
1983
只做原装正品
ON/安森美
2023+
8700
原装现货
SANYO
24+
2242
SANYO/三洋
23+
DIPSMD
5000
原厂授权代理,海外优势订货渠道。可提供大量库存,详
安森美
25+
12588
原装现货,价格优势
onsemi(安森美)
24+
TP-FA
1400
原厂订货渠道,支持BOM配单一站式服务
ON
2447
SMD
100500
一级代理专营品牌!原装正品,优势现货,长期排单到货
ONSEMI/安森美
2511
TO-252-3
360000
电子元器件采购降本 30%!盈慧通原厂直采,砍掉中间差价
ON
23+
TO-252
11846
一级代理商现货批发,原装正品,假一罚十
onsemi
两年内
NA
700
实单价格可谈

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