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2SC4135晶体管资料

  • 2SC4135别名:2SC4135三极管、2SC4135晶体管、2SC4135晶体三极管

  • 2SC4135生产厂家:日本三洋公司

  • 2SC4135制作材料:Si-NPN

  • 2SC4135性质:开关管 (S)_功率放大 (L)

  • 2SC4135封装形式:直插封装

  • 2SC4135极限工作电压:120V

  • 2SC4135最大电流允许值:2A

  • 2SC4135最大工作频率:120MHZ

  • 2SC4135引脚数:3

  • 2SC4135最大耗散功率:15W

  • 2SC4135放大倍数

  • 2SC4135图片代号:A-80

  • 2SC4135vtest:120

  • 2SC4135htest:120000000

  • 2SC4135atest:2

  • 2SC4135wtest:15

  • 2SC4135代换 2SC4135用什么型号代替:2SC3403,2SD1220,2SD1557,2SD1815,2SD1816,

型号 功能描述 生产厂家 企业 LOGO 操作
2SC4135

High-Voltage Switching Applications

High-Voltage Switching Applications Features • Adoption of FBET, MBIT processes. • High breakdown voltage and large current capacity. • Fast switching speed. • Small and slim package permitting 2SA1593/ 2SC4135-applied sets to be made more compact. Applications • Power supplies

SANYO

三洋

2SC4135

High-Voltage Switching Applications

Features ● High breakdown voltage and large current capacity. ● Fast switching speed.

KEXIN

科信电子

2SC4135

isc Silicon NPN Power Transistor

DESCRIPTION • High breakdown voltage and large current capacity • Fast switching speed • Small and slim package • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation • Complementary to 2SA1593 APPLICATIONS • Power supplies, re

ISC

无锡固电

2SC4135

Bipolar Transistor Adoption of FBET, MBIT processes

Features • Adoption of FBET, MBIT processes • High breakdown voltage and large current capacity • Fast switching speed • Small and slim package permitting 2SA1593/2SC4135-applied sets to be made more compact Applications • Power supplies, relay derivers, lamp drivers

ONSEMI

安森美半导体

2SC4135

Silicon NPN Power Transistor

DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 100V(Min) ·DC Current Gain- : hFE= 100(Min)@ IC= 0.1A ·Fast switching speed ·Large current capacity APPLICATIONS ·Power amplifier applications ·Driver stage amplifier applications

ISC

无锡固电

2SC4135

Silicon NPN Power Transistor

DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 100V(Min) ·DC Current Gain- : hFE= 100(Min)@ IC= 0.1A ·Fast switching speed ·Large current capacity APPLICATIONS ·Power amplifier applications ·Driver stage amplifier applications

ISC

无锡固电

2SC4135

双极晶体管,(-)100V,(-)2A,低饱和压,(PNP)NPN 单 TP/TP-FA

2SA1593/2SC4135 is Bipolar Transistor, (-)100V, (-)2A, Low VCE(sat), (PNP)NPN Single TP/TP-FA for High-Voltage Switching Applications. • Adoption of FBET, MBIT processes\n• High breakdown voltage and large current capacity\n• Fast switching speed\n• Small and slim package permitting 2SA1593/2SC4135-applied sets to be made more compact;

ONSEMI

安森美半导体

2SC4135

High-Voltage Switching Applications

文件:491.53 Kbytes Page:9 Pages

SANYO

三洋

Silicon NPN Power Transistor

DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 100V(Min) ·DC Current Gain- : hFE= 100(Min)@ IC= 0.1A ·Fast switching speed ·Large current capacity APPLICATIONS ·Power amplifier applications ·Driver stage amplifier applications

ISC

无锡固电

Silicon NPN Power Transistor

DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 100V(Min) ·DC Current Gain- : hFE= 100(Min)@ IC= 0.1A ·Fast switching speed ·Large current capacity APPLICATIONS ·Power amplifier applications ·Driver stage amplifier applications

ISC

无锡固电

Bipolar Transistor Adoption of FBET, MBIT processes

Features • Adoption of FBET, MBIT processes • High breakdown voltage and large current capacity • Fast switching speed • Small and slim package permitting 2SA1593/2SC4135-applied sets to be made more compact Applications • Power supplies, relay derivers, lamp drivers

ONSEMI

安森美半导体

Bipolar Transistor Adoption of FBET, MBIT processes

Features • Adoption of FBET, MBIT processes • High breakdown voltage and large current capacity • Fast switching speed • Small and slim package permitting 2SA1593/2SC4135-applied sets to be made more compact Applications • Power supplies, relay derivers, lamp drivers

ONSEMI

安森美半导体

Bipolar Transistor Adoption of FBET, MBIT processes

Features • Adoption of FBET, MBIT processes • High breakdown voltage and large current capacity • Fast switching speed • Small and slim package permitting 2SA1593/2SC4135-applied sets to be made more compact Applications • Power supplies, relay derivers, lamp drivers

ONSEMI

安森美半导体

Bipolar Transistor Adoption of FBET, MBIT processes

Features • Adoption of FBET, MBIT processes • High breakdown voltage and large current capacity • Fast switching speed • Small and slim package permitting 2SA1593/2SC4135-applied sets to be made more compact Applications • Power supplies, relay derivers, lamp drivers

ONSEMI

安森美半导体

Bipolar Transistor

文件:385.87 Kbytes Page:9 Pages

ONSEMI

安森美半导体

Bipolar Transistor

文件:385.87 Kbytes Page:9 Pages

ONSEMI

安森美半导体

封装/外壳:TO-252-3,DPak(2 引线 + 接片),SC-63 包装:卷带(TR)剪切带(CT)Digi-Reel® 得捷定制卷带 描述:TRANS NPN 100V 2A TPFA 分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个

ONSEMI

安森美半导体

封装/外壳:TO-251-3 短引线,IPak,TO-251AA 包装:卷带(TR)剪切带(CT)Digi-Reel® 得捷定制卷带 描述:TRANS NPN 100V 2A TP 分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个

ONSEMI

安森美半导体

Bipolar Transistor

文件:385.87 Kbytes Page:9 Pages

ONSEMI

安森美半导体

Bipolar Transistor

文件:385.87 Kbytes Page:9 Pages

ONSEMI

安森美半导体

2SC4135产品属性

  • 类型

    描述

  • Pb-free:

    Pb

  • Status:

    Active

  • Polarity:

    NPN

  • Type:

    Low VCE(sat)

  • VCE(sat) Max (V):

    0.4

  • IC Cont. (A):

    2

  • VCEO Min (V):

    100

  • VCBO (V):

    120

  • VEBO (V):

    6

  • VBE(sat) (V):

    0.85

  • hFE Min:

    140

  • hFE Max:

    280

  • PTM Max (W):

    1

  • Package Type:

    DPAK-3/TO-252-3

更新时间:2026-5-14 20:00:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
onsemi(安森美)
25+
TO-251
12421
正规渠道,免费送样。支持账期,BOM一站式配齐
SANYO/三洋
25+
TO-252
20300
SANYO/三洋原装特价2SC4135即刻询购立享优惠#长期有货
TO-252
23+
NA
15659
振宏微专业只做正品,假一罚百!
ONSEMI/安森美
2450+
8540
只做原装正品假一赔十为客户做到零风险!!
ON
25+
TO-252
5000
原厂原装,价格优势
SANYO
24+
2242
SANYO/三洋
22+
TO-252
20000
只做原装
ONSEMI
2130+
N/A
2010
全新 发货1-2天
ON(安森美)
2511
TO-251-3
4650
电子元器件采购降本 30%!公司原厂直采,砍掉中间差价
ON/安森美
NA
275000
一级代理原装正品,价格优势,长期供应!

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