型号 功能描述 生产厂家 企业 LOGO 操作
2SC4135T-E

Bipolar Transistor Adoption of FBET, MBIT processes

Features • Adoption of FBET, MBIT processes • High breakdown voltage and large current capacity • Fast switching speed • Small and slim package permitting 2SA1593/2SC4135-applied sets to be made more compact Applications • Power supplies, relay derivers, lamp drivers

ONSEMI

安森美半导体

2SC4135T-E

Bipolar Transistor

文件:385.87 Kbytes Page:9 Pages

ONSEMI

安森美半导体

2SC4135T-E

封装/外壳:TO-251-3 短引线,IPak,TO-251AA 包装:卷带(TR)剪切带(CT)Digi-Reel® 得捷定制卷带 描述:TRANS NPN 100V 2A TP 分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个

ONSEMI

安森美半导体

High-Voltage Switching Applications

High-Voltage Switching Applications Features • Adoption of FBET, MBIT processes. • High breakdown voltage and large current capacity. • Fast switching speed. • Small and slim package permitting 2SA1593/ 2SC4135-applied sets to be made more compact. Applications • Power supplies

SANYO

三洋

High-Voltage Switching Applications

Features ● High breakdown voltage and large current capacity. ● Fast switching speed.

KEXIN

科信电子

isc Silicon NPN Power Transistor

DESCRIPTION • High breakdown voltage and large current capacity • Fast switching speed • Small and slim package • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation • Complementary to 2SA1593 APPLICATIONS • Power supplies, re

ISC

无锡固电

Bipolar Transistor Adoption of FBET, MBIT processes

Features • Adoption of FBET, MBIT processes • High breakdown voltage and large current capacity • Fast switching speed • Small and slim package permitting 2SA1593/2SC4135-applied sets to be made more compact Applications • Power supplies, relay derivers, lamp drivers

ONSEMI

安森美半导体

High-Voltage Switching Applications

文件:491.53 Kbytes Page:9 Pages

SANYO

三洋

2SC4135T-E产品属性

  • 类型

    描述

  • 型号

    2SC4135T-E

  • 功能描述

    两极晶体管 - BJT BIP NPN 2A 100V

  • RoHS

  • 制造商

    STMicroelectronics

  • 晶体管极性

    PNP 集电极—基极电压

  • VCBO

    集电极—发射极最大电压

  • VCEO

    - 40 V 发射极 - 基极电压

  • VEBO

    - 6 V

  • 增益带宽产品fT

    直流集电极/Base Gain hfe

  • Min

    100 A

  • 安装风格

    SMD/SMT

  • 封装/箱体

    PowerFLAT 2 x 2

更新时间:2025-9-29 13:41:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
ROHM/罗姆
24+
TO126
990000
明嘉莱只做原装正品现货
ONSEMI/安森美
24+
TO-252-3
60000
全新原装现货
ROHM
24+
原厂封装
3500
原装现货假一罚十
SANYO
2023+
TO-126
58000
进口原装,现货热卖
2023+
15000
进口原装现货
ROHM
23+
TO-126
417
全新原装正品现货,支持订货
ROHM/罗姆
25+
TO126
54648
百分百原装现货 实单必成 欢迎询价
ONSEMI/安森美
2511
TO-252-3
360000
电子元器件采购降本 30%!盈慧通原厂直采,砍掉中间差价
ON
23+
TO-251
11846
一级代理商现货批发,原装正品,假一罚十
ONSEMI
两年内
N/A
690
原装现货,实单价格可谈

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