Bipolar Transistor Adoption of FBET, MBIT processes

Features • Adoption of FBET, MBIT processes • High breakdown voltage and large current capacity • Fast switching speed • Small and slim package permitting 2SA1593/2SC4135-applied sets to be made more compact Applications • Power supplies, relay derivers, lamp drivers

封装/外壳：TO-252-3，DPak（2 引线 + 接片），SC-63 包装：散装 描述：TRANS NPN 100V 2A TPFA 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

Bipolar Transistor

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isc Silicon NPN Power Transistor

DESCRIPTION • High breakdown voltage and large current capacity • Fast switching speed • Small and slim package • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation • Complementary to 2SA1593 APPLICATIONS • Power supplies, re

Bipolar Transistor Adoption of FBET, MBIT processes

Features • Adoption of FBET, MBIT processes • High breakdown voltage and large current capacity • Fast switching speed • Small and slim package permitting 2SA1593/2SC4135-applied sets to be made more compact Applications • Power supplies, relay derivers, lamp drivers

High-Voltage Switching Applications

High-Voltage Switching Applications Features • Adoption of FBET, MBIT processes. • High breakdown voltage and large current capacity. • Fast switching speed. • Small and slim package permitting 2SA1593/ 2SC4135-applied sets to be made more compact. Applications • Power supplies

High-Voltage Switching Applications

Features ● High breakdown voltage and large current capacity. ● Fast switching speed.

High-Voltage Switching Applications

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