TRANSISTOR (POWER AMPLIFIER, SWITCHING APPLICATIONS)

Power Amplifier Applications Power Switching Applications • Low saturation voltage: VCE (sat) = 0.5 V (max) (IC = 1 A) • High-speed switching time: tstg = 1.0 μs (typ.) • Small flat package • PC = 1.0 to 2.0 W (mounted on a ceramic substrate) • Complementary to 2SA1213

Silicon NPN Epitaxial Transistor

FEATURES ● Small flat package. ● Low saturation voltage VCE(sat)=-0.5V ● High speed switching time ● Complementary to 2SA1213 APPLICATIONS ● Power amplifier ● Power Switching

TRANSISTOR (NPN)

FEATURES ● Small Flat Package ● High Speed Switching Time ● Low Collector-emitter saturation voltage ● Complementary to 2SA1213 APPLICATIONS ● Power Amplifier and Switching

Silicon PNP Epitaxial Type

■ Features ● Small Flat Package ● High Speed Switching Time ● Low Collector-emitter saturation voltage ● Complementary to 2SA1213

NPN Silicon Epitaxial Planar Transistor

FEATURES ● Low saturation voltage ● High speed switching time ● Complementary to 2SA1213

SOT-89 Plastic-encapsulate NPN Transistors

■ Features ● Small Flat Package ● High Speed Switching Time ● Low Collector-emitter saturation voltage ● Complementary to 2SA1213

Silicon NPN Epitaxial Transistor

FEATURES Small flat package. Low saturation voltage VCE(sat)=-0.5V High speed switching time Complementary to 2SA1213 APPLICATIONS Power amplifier Power Switching

TRANSISTOR (NPN)

FEATURES Power dissipation PCM: 0.5 W (Tamb=25℃) Collector current ICM: 2 A Collector-base voltage V(BR)CBO: 50 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃

Silicon NPN transistor in a SOT-89 Plastic Package

Descriptions Silicon NPN transistor in a SOT-89 Plastic Package. Features Low collector saturation voltage, High speed switching time, small flat package, Complementary to 2SA1213. Applications Power amplifier and switching applications.

NPN Transistors

■ Features ● Small Flat Package ● High Speed Switching Time ● Low Collector-emitter saturation voltage ● Complementary to 2SA1213

Plastic-Encapsulate Transistors

FEATURES • Small flat package. • Low saturation voltage VCE(sat)=-0.5V • High speed switching time • PC=1.0 to 2.0W • Complementary to 2SA1213

Plastic-Encapsulate Transistors

FEATURES ● Small Flat Package ● High Speed Switching Time ● Low Collector-emitter saturation voltage ● Complementary to 2SA1213A APPLICATIONS ● Power Amplifier and Switching

Plastic-Encapsulate Transistors

FEATURES ● Small Flat Package ● High Speed Switching Time ● Low Collector-emitter saturation voltage ● Complementary to 2SA1213A APPLICATIONS ● Power Amplifier and Switching

Plastic-Encapsulate Transistors

FEATURES ● Small Flat Package ● High Speed Switching Time ● Low Collector-emitter saturation voltage ● Complementary to 2SA1213A APPLICATIONS ● Power Amplifier and Switching

General Purpose Transistor

Features - Small flat package - High speed switching time. - Low collector-emitter saturation voltage.

NPN Transistors

■ Features ● Small Flat Package ● High Speed Switching Time ● Low Collector-emitter saturation voltage ● Complementary to 2SA1213

General Purpose Transistor

Features - Small flat package - High speed switching time. - Low collector-emitter saturation voltage.

TRANSISTOR(NPN)

FEATURES  Small Flat Package  High Speed Switching Time  Low Collector-emitter saturation voltage  Complementary to 2SA1213 U  -CAR for automotive and other applications requiring unique site and control change requirements;AEC-Q101 qualified and PPAP capable APPLICATIONS  Power A

Small Flat Package

FEATURES  Small Flat Package  High Speed Switching Time  Low Collector-emitter saturation voltage  Complementary to 2SA1213U APPLICATIONS  Power Amplifier and Switching

Power Amplifier Applications

Power Amplifier Applications Power Switching Applications • Low saturation voltage: VCE (sat) = 0.5 V (max) (IC = 1 A) • High-speed switching time: tstg = 1.0 μs (typ.) • Small flat package • PC = 1.0 to 2.0 W (mounted on a ceramic substrate) • Complementary to 2SA1213

NPN Transistors

■ Features ● Small Flat Package ● High Speed Switching Time ● Low Collector-emitter saturation voltage ● Complementary to 2SA1213

General Purpose Transistor

Features - Small flat package - High speed switching time. - Low collector-emitter saturation voltage.

TRANSISTOR

3SK121 datasheet pdf

Silicon NPN Power Transistors

Silicon NPN Power Transistors DESCRIPTION ·With TO-126 package ·Complement to type 2SA1217 ·Good linearity of hFE APPLICATIONS ·Audio frequency power amplifier ·Low speed switching ·Suitable for output stage of 5 watts car radio and car stereo

Silicon NPN Power Transistors

Silicon NPN Power Transistors DESCRIPTION ·With TO-126 package ·Complement to type 2SA1217 ·Good linearity of hFE APPLICATIONS ·Audio frequency power amplifier ·Low speed switching ·Suitable for output stage of 5 watts car radio and car stereo

For Muting and Switching Applications

For Muting and Switching Applications • High emitter-base voltage: VEBO= 25 V (min) • High reverse hFE: Reverse hFE= 150 (typ.) (VCE= −2 V, IC= −4 mA) • Low on resistance: RON= 1 Ω(typ.) (IB= 5 mA)

For Muting and Switching Applications

For Muting and Switching Applications • High emitter-base voltage: VEBO= 25 V (min) • High reverse hFE: Reverse hFE= 150 (typ.) (VCE= −2 V, IC= −4 mA) • Low on resistance: RON= 1 Ω(typ.) (IB= 5 mA)

TRANSISTOR (FOR MUTING AND SWITCHING APPLICATIONS)

For Muting and Switching Applications • High emitter-base voltage: VEBO= 25 V (min) • High reverse hFE: Reverse hFE= 150 (typ.) (VCE= −2 V, IC= −4 mA) • Low on resistance: RON= 1 Ω(typ.) (IB= 5 mA)

For Muting and Switching Applications

For Muting and Switching Applications • High emitter-base voltage: VEBO= 25 V (min) • High reverse hFE: Reverse hFE= 150 (typ.) (VCE= −2 V, IC= −4 mA) • Low on resistance: RON= 1 Ω(typ.) (IB= 5 mA)

For Muting and Switching Applications

For Muting and Switching Applications • High emitter-base voltage: VEBO= 25 V (min) • High reverse hFE: Reverse hFE= 150 (typ.) (VCE= −2 V, IC= −4 mA) • Low on resistance: RON= 1 Ω(typ.) (IB= 5 mA)

For Muting and Switching Applications

For Muting and Switching Applications • High emitter-base voltage: VEBO= 25 V (min) • High reverse hFE: Reverse hFE= 150 (typ.) (VCE= −2 V, IC= −4 mA) • Low on resistance: RON= 1 Ω(typ.) (IB= 5 mA)

TO-92 Plastic-Encapsulate Transistors

TRANSISTOR (NPN) FEATURES ● High Emitter-Base Voltage ● Low On Resistance

0.3A, 50V NPN Plastic Encapsulated Transistor

FEATURES • Low On Resistance • High Emitter-Base Voltage • High Reverse hFE>30(typ.) VCE= -2V, IC= -4mA.

For Muting and Switching Applications

For Muting and Switching Applications • High emitter-base voltage: VEBO= 25 V (min) • High reverse hFE: Reverse hFE= 150 (typ.) (VCE= −2 V, IC= −4 mA) • Low on resistance: RON= 1 Ω(typ.) (IB= 5 mA)

For Muting and Switching Applications

For Muting and Switching Applications • High emitter-base voltage: VEBO= 25 V (min) • High reverse hFE: Reverse hFE= 150 (typ.) (VCE= −2 V, IC= −4 mA) • Low on resistance: RON= 1 Ω(typ.) (IB= 5 mA)

For Muting and Switching Applications

For Muting and Switching Applications • High emitter-base voltage: VEBO= 25 V (min) • High reverse hFE: Reverse hFE= 150 (typ.) (VCE= −2 V, IC= −4 mA) • Low on resistance: RON= 1 Ω(typ.) (IB= 5 mA)

TRANSISTOR (2~30MHz SSB LINEAR POWER AMPLIFIER APPLICATIONS)(LOW SUPPLY VOLTAGE USE)

2~30MHz SSB LINEAR POWER AMPLIFIER APPLICATIONS (LOW SUPPLY VOLTAGE USE) ● Specified 12.5V, 28MHz Characteristics ● Output Power : Po = 100WPEP ● Power Gain : Gp = 13dB ● Collector Efficiency : ηC = 35 (Min.) ● Intermodulation Distortion : IMD = −24dB(Max.)

NPN SILICON RF POWER TRANSISTOR

DESCRIPTION: The ASI 2SC2879 is a 12.5 V transistor designed primarily for SSB linear power amplifier applications up to 28 MHz. FEATURES: • PG = 13 Typ. min. at 100 W/28 MHz • IMD3 = -24 dBc max. at 100 W(PEP) • Omnigold™ Metalization System

SILICON NPN EPITAXIAL PLANAR TYPE 2~30MHz SSB LINEAR POWER AMPLIFIER APPLICATIONS (LOW SUPPLY VOLTAGE USE)

2~30MHz SSB LINEAR POWER AMPLIFIER APPLICATIONS (LOW SUPPLY VOLTAGE USE) ● Specified 12.5V, 28MHz Characteristics ● Output Power : Po = 100WPEP ● Power Gain : Gp = 13dB ● Collector Efficiency : ηC = 35 (Min.) ● Intermodulation Distortion : IMD = −24dB(Max.)

Power Amplifier Applications Power Switching Applications

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SOT-89-3L Plastic-Encapsulate Transistors

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三极管

NPN小信号三极管

晶体管

Power Amplifier Applications Power Switching Applications

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GENERAL PURPOSE TRANSISTOR 500mW 1.5A 32V TRANSISTOR

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封装/外壳：TO-243AA 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：PB-F POWER TRANSISTOR PW-MINI MO 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

Silicon NPN Power Transistor

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