General Purpose Transistor

Features - Small flat package - High speed switching time. - Low collector-emitter saturation voltage.

General Purpose Transistor

TRANSISTOR (POWER AMPLIFIER, SWITCHING APPLICATIONS)

Power Amplifier Applications Power Switching Applications • Low saturation voltage: VCE (sat) = 0.5 V (max) (IC = 1 A) • High-speed switching time: tstg = 1.0 μs (typ.) • Small flat package • PC = 1.0 to 2.0 W (mounted on a ceramic substrate) • Complementary to 2SA1213

NPN Silicon Epitaxial Planar Transistor

FEATURES ● Low saturation voltage ● High speed switching time ● Complementary to 2SA1213

TRANSISTOR (NPN)

FEATURES ● Small Flat Package ● High Speed Switching Time ● Low Collector-emitter saturation voltage ● Complementary to 2SA1213 APPLICATIONS ● Power Amplifier and Switching

Silicon PNP Epitaxial Type

■ Features ● Small Flat Package ● High Speed Switching Time ● Low Collector-emitter saturation voltage ● Complementary to 2SA1213

Power Amplifier Applications Power Switching Applications

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