NPN Transistors

■ Features ● Small Flat Package ● High Speed Switching Time ● Low Collector-emitter saturation voltage ● Complementary to 2SA1213

NPN Transistors

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NPN Silicon Epitaxial Transistors

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NPN Silicon Epitaxial Transistors

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功率三极管

中等功率双极型晶体管

TRANSISTOR (POWER AMPLIFIER, SWITCHING APPLICATIONS)

Power Amplifier Applications Power Switching Applications • Low saturation voltage: VCE (sat) = 0.5 V (max) (IC = 1 A) • High-speed switching time: tstg = 1.0 μs (typ.) • Small flat package • PC = 1.0 to 2.0 W (mounted on a ceramic substrate) • Complementary to 2SA1213

NPN Silicon Epitaxial Planar Transistor

FEATURES ● Low saturation voltage ● High speed switching time ● Complementary to 2SA1213

TRANSISTOR (NPN)

FEATURES ● Small Flat Package ● High Speed Switching Time ● Low Collector-emitter saturation voltage ● Complementary to 2SA1213 APPLICATIONS ● Power Amplifier and Switching

Silicon PNP Epitaxial Type

■ Features ● Small Flat Package ● High Speed Switching Time ● Low Collector-emitter saturation voltage ● Complementary to 2SA1213

Power Amplifier Applications Power Switching Applications

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封装/外壳：TO-243AA 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：PB-F POWER TRANSISTOR PW-MINI MO 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个