For Muting and Switching Applications

For Muting and Switching Applications • High emitter-base voltage: VEBO= 25 V (min) • High reverse hFE: Reverse hFE= 150 (typ.) (VCE= −2 V, IC= −4 mA) • Low on resistance: RON= 1 Ω(typ.) (IB= 5 mA)

TO-92 Plastic-Encapsulate Transistors

TRANSISTOR (NPN) FEATURES ● High Emitter-Base Voltage ● Low On Resistance

0.3A, 50V NPN Plastic Encapsulated Transistor

FEATURES • Low On Resistance • High Emitter-Base Voltage • High Reverse hFE>30(typ.) VCE= -2V, IC= -4mA.

Transistor

Small Signal Transistor

晶体管

For Muting and Switching Applications

For Muting and Switching Applications • High emitter-base voltage: VEBO= 25 V (min) • High reverse hFE: Reverse hFE= 150 (typ.) (VCE= −2 V, IC= −4 mA) • Low on resistance: RON= 1 Ω(typ.) (IB= 5 mA)

TRANSISTOR (FOR MUTING AND SWITCHING APPLICATIONS)

For Muting and Switching Applications • High emitter-base voltage: VEBO= 25 V (min) • High reverse hFE: Reverse hFE= 150 (typ.) (VCE= −2 V, IC= −4 mA) • Low on resistance: RON= 1 Ω(typ.) (IB= 5 mA)

For Muting and Switching Applications

For Muting and Switching Applications • High emitter-base voltage: VEBO= 25 V (min) • High reverse hFE: Reverse hFE= 150 (typ.) (VCE= −2 V, IC= −4 mA) • Low on resistance: RON= 1 Ω(typ.) (IB= 5 mA)

For Muting and Switching Applications

For Muting and Switching Applications • High emitter-base voltage: VEBO= 25 V (min) • High reverse hFE: Reverse hFE= 150 (typ.) (VCE= −2 V, IC= −4 mA) • Low on resistance: RON= 1 Ω(typ.) (IB= 5 mA)

Silicon NPN Epitaxial Type For Muting and Switching Applications

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