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2SA81晶体管资料

  • 2SA81别名：2SA81三极管、2SA81晶体管、2SA81晶体三极管

  • 2SA81生产厂家：日本日立公司

  • 2SA81制作材料：Ge-PNP

  • 2SA81性质：调幅 （AM）_振荡级 （O）

  • 2SA81封装形式：直插封装

  • 2SA81极限工作电压：20V

  • 2SA81最大电流允许值：0.01A

  • 2SA81最大工作频率：40MHZ

  • 2SA81引脚数：3

  • 2SA81最大耗散功率：

  • 2SA81放大倍数：

  • 2SA81图片代号：D-58

  • 2SA81vtest：20

  • 2SA81htest：40000000

  • 2SA81atest：0.01

  • 2SA81wtest：0

  • 2SA81代换 2SA81用什么型号代替：AF124,AF125,AF126,AF200,2SA218,2SA219,2SA220,2SA221,2SA222,2SA223,2SA224,2SA225,2SA226,2SA227,2N3323,2N3324,2N3325,3AG54B,

型号 功能描述 生产厂家&企业 LOGO 操作
2SA811A

AUDIOFREQUENCYHIGHGAINAMPLIFIERPNPSILICONEPITAXIALTRANSISTORMINIMOLD?

AUDIOFREQUENCYHIGHGAINAMPLIFIERPNPSILICONEPITAXIALTRANSISTORMINIMOLD FEATURE ●HighDCCurrentGain:hFE500TYP.(VCE=-6.0V,IC=-1.0mA)

NECRenesas Electronics America

瑞萨日本瑞萨电子株式会社

NEC
2SA811A

PNPSiliconEpitaxialTransistor

Features ●HighDCcurrentgain.

KEXINGuangdong Kexin Industrial Co.,Ltd

科信电子广东科信实业有限公司

KEXIN
2SA812

PNPSiliconEpitaxialTransistor

Features ●HighDCCurrentGain:hFE=200TYP.(VCE=-6.0V,IC=-1.0mA) ●HighVoltage:VCEO=-50V

KEXINGuangdong Kexin Industrial Co.,Ltd

科信电子广东科信实业有限公司

KEXIN
2SA812

AUDIOFREQUENCY,GENERALPURPOSEAMPLIFIERPNPSILICONEPITAXIALTRANSISTORMINIMOLD

FEATURES •Complementaryto2SC1623 •HighDCCurrentGain:hFE=200TYP.(VCE=−6.0V,IC=−1.0mA)) •HighVoltage:VCEO=−50V

NECRenesas Electronics America

瑞萨日本瑞萨电子株式会社

NEC
2SA812

Plastic-EncapsulatedTransistors

TRANSISTOR(PNP) FEATURES PowerdissipationPCM:0.2W(Tamb=25℃) CollectorcurrentICM:-0.1A Collector-basevoltageV(BR)CBO:-60V OperatingandstoragejunctiontemperaturerangeTJ,Tstg:-55℃to+150℃

TELTokyo Electron Ltd.

东电电子东京电子有限公司

TEL
2SA812

SiliconEpitaxialPlanarTransistor

FEATURES ●Commplementaryto2SC1623. ●HighDCcurrentgain:hFE=200typ.(VCE=-6.0V,IC=-1.0mA) ●HighVoltage:VCEO=-50V. APPLICATIONS ●Audiofrequency,generalpurposeamplifier.

BILINGalaxy Semi-Conductor Holdings Limited

银河微电常州银河世纪微电子股份有限公司

BILIN
2SA812

TRANSISTOR(PNP)

FEATURES ●Complementaryto2SC1623 ●HighDCCurrentGain:hFE=200TYP.(VCE=-6V,IC=-1mA) ●HighVoltage:Vceo=-50V

HTSEMIShenzhen Jin Yu Semiconductor Co., Ltd.

金誉半导体深圳市金誉半导体股份有限公司

HTSEMI
2SA812

TECHNICALSPECIFICATIONSOFPNPEPITAXIALPLANARTRANSISTOR

Description Designedforaudiofrequencyamplifierapplications.

DCCOM

Dc Components

DCCOM
2SA812

PNPGeneralPurposeTransistors

PNPGeneralPurposeTransistors P/bLead(Pb)-Free

WEITRON

Weitron Technology

WEITRON
2SA812

SOT-23Plastic-EncapsulateTransistors

FEATURES Complementaryto2SC1623 HighDCCurrentGain:hFE=200TYP.(VCE=-6V,IC=-1mA) HighVoltage:Vceo=-50V

DGNJDZNanjing International Group Co

南晶电子东莞市南晶电子有限公司

DGNJDZ
2SA812

TRANSISTOR(PNP)

FEATURES PowerdissipationPCM:0.2W(Tamb=25℃) CollectorcurrentICM:-0.1A Collector-basevoltageV(BR)CBO:-60V OperatingandstoragejunctiontemperaturerangeTJ,Tstg:-55℃to+150℃

WINNERJOINSHENZHEN YONGERJIA INDUSTRY CO.,LTD

永而佳实业深圳市永而佳实业有限公司

WINNERJOIN
2SA812

PNPGeneralPurposeTransistor

■FEATURES PNPGeneralPurposeTransistor

GSMEGuilin Strong Micro-Electronics Co., Ltd.

桂微桂林斯壮桂微电子有限责任公司

GSME
2SA812

SOT-23Plastic-EncapsulateTransistors

TRANSISTOR(PNP) FEATURES •Complementaryto2SC1623 •HighDCCurrentGain:hFE=200TYP.(VCE=-6V,IC=-1mA) •HighVoltage:Vceo=-50V

JIANGSUJiangsu Changjiang Electronics Technology Co., Ltd

长电科技江苏长电科技股份有限公司

JIANGSU
2SA812

Plastic-EncapsulateTransistors

Features: 1.hFEishigh,hFE=200(TYP)VCE=-6V,IC=-1mA; 2.Highvoltage,VCEO=-50V; Applications: Forgeneralamplification,itiscomplementaryto2SC1623.

SHENZHENSLSSHENZHEN SLS TECHNOLOGY CO.,LTD.

三联盛科技股份深圳市三联盛科技股份有限公司

SHENZHENSLS
2SA812

Plastic-EncapsulateTransistors

FEATURES Complementaryto2SC1623 HighDCCurrentGain:hFE=200TYP.(VCE=-6V,IC=-1mA) HighVoltage:Vceo=-50V

HOTTECHGuangdong Hottech Co. Ltd.

合科泰深圳市合科泰电子有限公司

HOTTECH
2SA812

SiliconPNPtransistorinaSOT-23PlasticPackage

Descriptions SiliconPNPtransistorinaSOT-23PlasticPackage. Features Complementarypairwith2SC1623. Applications Audiofrequencyamplifierapplication.

FOSHANFoshan Blue Rocket Electronics Co.,Ltd.

蓝箭电子佛山市蓝箭电子股份有限公司

FOSHAN
2SA812

SiliconEpitaxialPlanarTransistor

FEATURES ●Commplementaryto2SC1623. ●HighDCcurrentgain:hFE=200typ. (VCE=-6.0V,IC=-1.0mA) ●HighVoltage:VCEO=-50V. APPLICATIONS ●Audiofrequency,generalpurposeamplifier.

LUGUANGShenzhen Luguang Electronic Technology Co., Ltd

鲁光电子深圳市鲁光电子科技有限公司

LUGUANG
2SA812

SiliconEpitaxialPlanarTransistor

FEATURES •Commplementaryto2SC1623. •HighDCcurrentgain:hFE=200typ.(VCE=-6.0V,IC=-1.0mA) •HighVoltage:VCEO=-50V. APPLICATIONS •Audiofrequency,generalpurposeamplifier.

SKTECHNOLGYSHIKE Electronics

时科广东时科微实业有限公司

SKTECHNOLGY
2SA812

PNPSiliconEpitaxialTransistor

Features ●HighDCCurrentGain:hFE=200TYP.(VCE=-6.0V,IC=-1.0mA) ●HighVoltage:VCEO=-50V

YFWDIODEDONGGUAN YOU FENG WEI ELECTRONICS CO., LTD

佑风微电子广东佑风微电子有限公司

YFWDIODE
2SA812

SILICONTRANSISTOR

PNPSILICONEPITAXIALTRANSISTOR MINIMOLD FEATURES •Complementaryto2SC1623 •HighDCCurrentGain:hFE=200TYP.(VCE=−6.0V,IC=−1.0mA) •HighVoltage:VCEO=−50V ABSOLUTEMAXIMUMRATINGS(TA=25°C) CollectortoBaseVoltageVCBO−60V CollectortoEmitterVoltageVCEO−50

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

RENESAS
2SA812

Plastic-EncapsulateTransistors

FEATURES Complementaryto2SC1623 HighDCCurrentGain:hFE=200TYP.(VCE=-6V,IC=-1mA) HighVoltage:Vceo=-50V

GWSEMIGoodwork Semiconductor Co., Ltd

唯圣电子唯圣电子有限公司

GWSEMI
2SA812A

SILICONTRANSISTOR

PNPSILICONEPITAXIALTRANSISTOR MINIMOLD FEATURES •Complementaryto2SC1623A •HighDCCurrentGain:hFE=200TYP.(VCE=−6.0V,IC=−1.0mA) •HighVoltage:VCEO=−50V ABSOLUTEMAXIMUMRATINGS(TA=25°C) CollectortoBaseVoltageVCBO−60V CollectortoEmitterVoltageVCEO−50

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

RENESAS
2SA812K

PNPEpitaxialPlanarTransistor

FEATURES •Complementaryto2SC1623K •HighDCCurrentGain:hFE=200TYP.(VCE=-6V,IC=-1mA) •HighVoltage:VCEO=-50V

SECOSSeCoS Halbleitertechnologie GmbH

喜可士喜可士股份有限公司

SECOS
2SA812-M4

PNPSiliconEpitaxialTransistors

Features •LeadFreeFinish/RoHSCompliant(PSuffixdesignates RoHSCompliant.Seeorderinginformation) •HighDCCurrentGain:90ЉhFEЉ600.(VCE=-6.0V,IC=-1mA) •Highvoltage:VCEO=-50V •EpoxymeetsUL94V-0flammabilityrating •MoisureSensitivityLevel1 •Halogenfreeavailable

MCCMicro Commercial Components

美微科美微科半导体股份有限公司

MCC
2SA812-M5

PNPSiliconEpitaxialTransistors

Features •LeadFreeFinish/RoHSCompliant(PSuffixdesignates RoHSCompliant.Seeorderinginformation) •HighDCCurrentGain:90ЉhFEЉ600.(VCE=-6.0V,IC=-1mA) •Highvoltage:VCEO=-50V •EpoxymeetsUL94V-0flammabilityrating •MoisureSensitivityLevel1 •Halogenfreeavailable

MCCMicro Commercial Components

美微科美微科半导体股份有限公司

MCC
2SA812-M6

PNPSiliconEpitaxialTransistors

Features •LeadFreeFinish/RoHSCompliant(PSuffixdesignates RoHSCompliant.Seeorderinginformation) •HighDCCurrentGain:90ЉhFEЉ600.(VCE=-6.0V,IC=-1mA) •Highvoltage:VCEO=-50V •EpoxymeetsUL94V-0flammabilityrating •MoisureSensitivityLevel1 •Halogenfreeavailable

MCCMicro Commercial Components

美微科美微科半导体股份有限公司

MCC
2SA812-M7

PNPSiliconEpitaxialTransistors

Features •LeadFreeFinish/RoHSCompliant(PSuffixdesignates RoHSCompliant.Seeorderinginformation) •HighDCCurrentGain:90ЉhFEЉ600.(VCE=-6.0V,IC=-1mA) •Highvoltage:VCEO=-50V •EpoxymeetsUL94V-0flammabilityrating •MoisureSensitivityLevel1 •Halogenfreeavailable

MCCMicro Commercial Components

美微科美微科半导体股份有限公司

MCC
2SA812Q

GeneralPurposeTransistors

FEATURE ●HighVoltage:VCEO=-50V. ●Epitaxialplanartype. ●NPNcomplement:2SC1623 ●WedeclarethatthematerialofproductcompliancewithRoHSrequirements. ●S-PrefixforAutomotiveandOtherApplicationsRequiringUniqueSite andControlChangeRequirements;AEC-Q101Qualified

YEASHINYea Shin Technology Co., Ltd

亚昕科技亚昕科技股份有限公司

YEASHIN
2SA812R

GeneralPurposeTransistors

FEATURE ●HighVoltage:VCEO=-50V. ●Epitaxialplanartype. ●NPNcomplement:2SC1623 ●WedeclarethatthematerialofproductcompliancewithRoHSrequirements. ●S-PrefixforAutomotiveandOtherApplicationsRequiringUniqueSite andControlChangeRequirements;AEC-Q101Qualified

YEASHINYea Shin Technology Co., Ltd

亚昕科技亚昕科技股份有限公司

YEASHIN
2SA812S

GeneralPurposeTransistors

FEATURE ●HighVoltage:VCEO=-50V. ●Epitaxialplanartype. ●NPNcomplement:2SC1623 ●WedeclarethatthematerialofproductcompliancewithRoHSrequirements. ●S-PrefixforAutomotiveandOtherApplicationsRequiringUniqueSite andControlChangeRequirements;AEC-Q101Qualified

YEASHINYea Shin Technology Co., Ltd

亚昕科技亚昕科技股份有限公司

YEASHIN
2SA812-T1B

AUDIOFREQUENCY,GENERALPURPOSEAMPLIFIERPNPSILICONEPITAXIALTRANSISTORMINIMOLD

FEATURES •Complementaryto2SC1623 •HighDCCurrentGain:hFE=200TYP.(VCE=−6.0V,IC=−1.0mA)) •HighVoltage:VCEO=−50V

NECRenesas Electronics America

瑞萨日本瑞萨电子株式会社

NEC
2SA814

SiliconPNPPowerTransistors

DESCRIPTION •WithTO-220package •Complementtotype2SC1624/1625 •Highbreakdownvoltage APPLICATIONS •Mediumpoweramplifierapplications •Driverstageamplifierapplications

SAVANTIC

Savantic, Inc.

SAVANTIC
2SA814

SILICONPNPEPITAXIALBASEMESATYPE

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TOSHIBA
2SA814

SiliconPNPPowerTransistors

DESCRIPTION •WithTO-220package •Complementtotype2SC1624/1625 •Highbreakdownvoltage APPLICATIONS •Mediumpoweramplifierapplications •Driverstageamplifierapplications

JMNICQuanzhou Jinmei Electronic Co.,Ltd.

锦美电子泉州锦美电子有限公司

JMNIC
2SA814

SiliconPNPPowerTransistors

DESCRIPTION •WithTO-220package •Complementtotype2SC1624/1625 •Highbreakdownvoltage APPLICATIONS •Mediumpoweramplifierapplications •Driverstageamplifierapplications

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC
2SA815

SILICONPNPEPITAXIALBASEMESATYPE

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TOSHIBA
2SA815

SiliconPNPPowerTransistors

DESCRIPTION •WithTO-220package •Complementtotype2SC1624/1625 •Highbreakdownvoltage APPLICATIONS •Mediumpoweramplifierapplications •Driverstageamplifierapplications

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC
2SA815

SiliconPNPPowerTransistors

DESCRIPTION •WithTO-220package •Complementtotype2SC1624/1625 •Highbreakdownvoltage APPLICATIONS •Mediumpoweramplifierapplications •Driverstageamplifierapplications

SAVANTIC

Savantic, Inc.

SAVANTIC
2SA815

SiliconPNPPowerTransistors

DESCRIPTION •WithTO-220package •Complementtotype2SC1624/1625 •Highbreakdownvoltage APPLICATIONS •Mediumpoweramplifierapplications •Driverstageamplifierapplications

JMNICQuanzhou Jinmei Electronic Co.,Ltd.

锦美电子泉州锦美电子有限公司

JMNIC
2SA816

PNP/NPNSILICONPLANAREPITAXIALPOWERTRANSISTOR

MICRO-ELECTRONICS

Micro Electronics

MICRO-ELECTRONICS
2SA817

TRANSISTOR(AUDIOFREQUENCYAMPLIFIERAPPLICATIONS)

AudioFrequencyAmplifierApplications •Complementaryto2SC1627. •Suitablefordriverof20~25wattsaudioamplifiers.

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TOSHIBA
2SA817A

TRANSISTOR(DRIVERSTAGE,VOLTAGEAMPLIFIERAPPLICATIONS)

Driver-StageAmplifierApplications VoltageAmplifierApplications •Complementaryto2SC1627A. •Driverstageapplicationof30to35wattsamplifiers.

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TOSHIBA
2SA817A

TO-92MODPlastic-EncapsulateTransistors

TRANSISTOR(PNP) FEATURES •Complementaryto2SC1627A. •DriverStageApplicationof30to35WattsAmplifiers.

JIANGSUJiangsu Changjiang Electronics Technology Co., Ltd

长电科技江苏长电科技股份有限公司

JIANGSU
2SA817A

SiliconPNPtransistorinaTO-92LMPlasticPackage

Descriptions SiliconPNPtransistorinaTO-92LMPlasticPackage. Features Driverstageof30to35wattsapplication,complementarypairwith2SC1627A. Applications Driverstageamplifierandvoltageamplifier.

FOSHANFoshan Blue Rocket Electronics Co.,Ltd.

蓝箭电子佛山市蓝箭电子股份有限公司

FOSHAN
2SA817A

TRANSISTOR(PNP)

TRANSISTOR(PNP) FEATURES •Complementaryto2SC1627A. •DriverStageApplicationof30to35WattsAmplifiers.

KOOCHIN

SHENZHEN KOO CHIN ELECTRONICS CO., LTD.

KOOCHIN
2SA817A

BipolarSmall-SignalTransistors

MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TOSHIBA
2SA811A-T1B-A

OldCompanyNameinCatalogsandOtherDocuments

文件：308.31 Kbytes Page：6 Pages

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

RENESAS
2SA812

SiliconEpitaxialPlanarTransistor

文件：175.65 Kbytes Page：4 Pages

BILINGalaxy Semi-Conductor Holdings Limited

银河微电常州银河世纪微电子股份有限公司

BILIN
2SA812

SiliconEpitaxialPlanarTransistor

文件：219.91 Kbytes Page：4 Pages

BILINGalaxy Semi-Conductor Holdings Limited

银河微电常州银河世纪微电子股份有限公司

BILIN
2SA812

SOT-23BIPOLARTRANSISTORSTRANSISTOR(PNP)

文件：294.38 Kbytes Page：2 Pages

RECTRON

Rectron Semiconductor

RECTRON
2SA812

PNPPlastic-EncapsulateTransistors

文件：1.70898 Mbytes Page：5 Pages

JINGHENGJinan Jing Heng Electronics Co., Ltd.

晶恒济南晶恒电子有限责任公司

JINGHENG
2SA812_0712

SiliconEpitaxialPlanarTransistor

文件：230.77 Kbytes Page：4 Pages

BILINGalaxy Semi-Conductor Holdings Limited

银河微电常州银河世纪微电子股份有限公司

BILIN
2SA812_12

SiliconEpitaxialPlanarTransistor

文件：219.91 Kbytes Page：4 Pages

BILINGalaxy Semi-Conductor Holdings Limited

银河微电常州银河世纪微电子股份有限公司

BILIN
2SA812_15

PNPTransistors

文件：877.77 Kbytes Page：2 Pages

KEXINGuangdong Kexin Industrial Co.,Ltd

科信电子广东科信实业有限公司

KEXIN
2SA812_15

TRANSISTOR

文件：136.58 Kbytes Page：1 Pages

WINNERJOINSHENZHEN YONGERJIA INDUSTRY CO.,LTD

永而佳实业深圳市永而佳实业有限公司

WINNERJOIN
2SA812_15

PNPSILICONEPITAXIALTRANSISTORMINIMOLD

文件：334.39 Kbytes Page：6 Pages

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

RENESAS
2SA812_17

SiliconEpitaxialPlanarTransistor

文件：175.65 Kbytes Page：4 Pages

BILINGalaxy Semi-Conductor Holdings Limited

银河微电常州银河世纪微电子股份有限公司

BILIN
2SA812-HF_15

PNPTransistors

文件：1.03939 Mbytes Page：2 Pages

KEXINGuangdong Kexin Industrial Co.,Ltd

科信电子广东科信实业有限公司

KEXIN
2SA812K_15

PNPEpitaxialPlanarTransistor

文件：249.25 Kbytes Page：2 Pages

SECOSSeCoS Halbleitertechnologie GmbH

喜可士喜可士股份有限公司

SECOS
2SA812-M4

PNPSiliconEpitaxialTransistors

文件：398.13 Kbytes Page：4 Pages

MCCMicro Commercial Components

美微科美微科半导体股份有限公司

MCC

2SA81产品属性

  • 类型

    描述

  • 型号

    2SA81

  • 制造商

    Distributed By MCM

  • 功能描述

    SUB ONLY NEC TRANSISTOR SC-59-120V -.05A .15W EBC SRFCE MT

2SA81供应商更多...

更新时间：2025-6-13 20:00:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
深圳市得捷芯城科技有限公司
2SA811A
NEC
24+
NA/
6000
优势代理渠道,原装正品,可全系列订货开增值税票
询价
深圳市威雅利发展有限公司
2SA811A
RENESAS
10+
SOT-23
12000
一级代理,专注军工、汽车、医疗、工业、新能源、电力
询价
深圳市汇莱威科技有限公司
2SA811A-T1B-A
NEC
2024
SOT23
13500
16余年资质 绝对原盒原盘代理渠道 更多数量
询价
深圳市振宏微科技有限公司
2SA811A
SMD
23+
NA
15659
振宏微专业只做正品,假一罚百!
询价
深圳市华斯顿科技有限公司
2SA811A
NEC
25+23+
Sot-23
32890
绝对原装正品全新进口深圳现货
询价
深圳市博浩通科技有限公司
2SA811A-T1B
NEC
23+
SOT-23
6680
全新原装优势
询价
深圳市一线半导体有限公司
2SA811A
NEC
24+
SOT-23
21200
新进库存/原装
询价
深圳市正迈科技有限公司
2SA811A-T1B
NEC
23+
NA
19854
专业电子元器件供应链正迈科技特价代理QQ1304306553
询价
深圳市豪迈兴电子有限公司
2SA811A
NEC
24+
4231
公司原厂原装现货假一罚十!特价出售!强势库存!
询价
贸泽芯城（深圳）电子科技有限公司
2SA811A,2SC5066-Y,HVC142KRF,BFP740E6327
进口品牌
23+
SMD
34979
原厂授权代理,海外优势订货渠道。可提供大量库存,详
询价

2SA81芯片相关品牌

  • AAO
  • Fairchild
  • FRONTIER
  • GigaDevice
  • JAUCH
  • KEC
  • KEYSIGHT
  • LIGITEK
  • MINI
  • OMRON
  • QUALTEK
  • SENSITRON

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