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2SA81晶体管资料

2SA81别名：2SA81三极管、2SA81晶体管、2SA81晶体三极管
2SA81生产厂家：日本日立公司
2SA81制作材料：Ge-PNP
2SA81性质：调幅（AM）_振荡级（O）
2SA81封装形式：直插封装
2SA81极限工作电压：20V
2SA81最大电流允许值：0.01A
2SA81最大工作频率：40MHZ
2SA81引脚数：3
2SA81最大耗散功率：
2SA81放大倍数：
2SA81图片代号：D-58
2SA81vtest：20
2SA81htest：40000000
2SA81atest：0.01
2SA81wtest：0

2SA81代换 2SA81用什么型号代替：AF124,AF125,AF126,AF200,2SA218,2SA219,2SA220,2SA221,2SA222,2SA223,2SA224,2SA225,2SA226,2SA227,2N3323,2N3324,2N3325,3AG54B,

型号	功能描述	生产厂家企业	LOGO
2SA811A	AUDIO FREQUENCY HIGH GAIN AMPLIFIER PNP SILICON EPITAXIAL TRANSISTOR MINI MOLD? AUDIO FREQUENCY HIGH GAIN AMPLIFIER PNP SILICON EPITAXIAL TRANSISTOR MINI MOLD FEATURE ● High DC Current Gain: hFE 500 TYP. (VCE = -6.0 V, IC = -1.0 mA)	NEC 瑞萨	NEC
2SA811A	PNP Silicon Epitaxial Transistor Features ● High DC current gain.	KEXIN 科信电子	KEXIN
2SA812	PNP Silicon Epitaxial Transistor Features ● High DC Current Gain: hFE = 200 TYP. (VCE = -6.0 V, IC = -1.0 mA) ● High Voltage: VCEO = -50 V	KEXIN 科信电子	KEXIN
2SA812	PNP General Purpose Transistor ■ FEATURES PNP General Purpose Transistor	GSME 桂微	GSME
2SA812	TRANSISTOR(PNP) FEATURES ● Complementary to 2SC1623 ● High DC Current Gain: hFE=200 TYP.(VCE=-6V,IC=-1mA) ● High Voltage: Vceo=-50V	HTSEMI 金誉半导体	HTSEMI
2SA812	SOT-23 Plastic-Encapsulate Transistors TRANSISTOR (PNP) FEATURES • Complementary to 2SC1623 • High DC Current Gain: hFE=200 TYP.(VCE=-6V,IC=-1mA) • High Voltage: Vceo=-50V	JIANGSU 长电科技	JIANGSU
2SA812	Silicon Epitaxial Planar Transistor FEATURES ● Commplementary to 2SC1623. ● High DC current gain:hFE=200typ. (VCE=-6.0V,IC=-1.0mA) ● High Voltage: VCEO=-50V. APPLICATIONS ● Audio frequency, general purpose amplifier.	LUGUANG 鲁光电子	LUGUANG
2SA812	SOT-23 Plastic-Encapsulate Transistors FEATURES Complementary to 2SC1623 High DC Current Gain: hFE=200 TYP.(VCE=-6V,IC=-1mA) High Voltage: Vceo=-50V	DGNJDZ 南晶电子	DGNJDZ
2SA812	TRANSISTOR (PNP) FEATURES Power dissipation PCM : 0.2 W (Tamb=25℃) Collector current ICM : -0.1 A Collector-base voltage V(BR)CBO : -60 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃	WINNERJOIN 永而佳	WINNERJOIN
2SA812	AUDIO FREQUENCY,GENERAL PURPOSE AMPLIFIER PNP SILICON EPITAXIAL TRANSISTOR MINI MOLD FEATURES • Complementary to 2SC1623 • High DC Current Gain: hFE= 200 TYP. (VCE= −6.0 V, IC= −1.0 mA) ) • High Voltage: VCEO= −50 V	NEC 瑞萨	NEC
2SA812	SILICON TRANSISTOR PNP SILICON EPITAXIAL TRANSISTOR MINI MOLD FEATURES • Complementary to 2SC1623 • High DC Current Gain: hFE = 200 TYP. (VCE = −6.0 V, IC = −1.0 mA) • High Voltage: VCEO = −50 V ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Collector to Base Voltage VCBO −60 V Collector to Emitter Voltage VCEO −50	RENESAS 瑞萨	RENESAS
2SA812	PNP General Purpose Transistors PNP General Purpose Transistors P/b Lead(Pb)-Free	WEITRON	WEITRON
2SA812	Silicon Epitaxial Planar Transistor FEATURES ● Commplementary to 2SC1623. ● High DC current gain:hFE=200typ. (VCE=-6.0V,IC=-1.0mA) ● High Voltage: VCEO=-50V. APPLICATIONS ● Audio frequency, general purpose amplifier.	BILIN 银河微电	BILIN
2SA812	TECHNICAL SPECIFICATIONS OF PNP EPITAXIAL PLANAR TRANSISTOR Description Designed for audio frequency amplifier applications.	DCCOM 道全	DCCOM
2SA812	Silicon PNP transistor in a SOT-23 Plastic Package Descriptions Silicon PNP transistor in a SOT-23 Plastic Package. Features Complementary pair with 2SC1623. Applications Audio frequency amplifier application.	FOSHAN 蓝箭电子	FOSHAN
2SA812	Silicon Epitaxial Planar Transistor FEATURES • Commplementary to 2SC1623. • High DC current gain:hFE=200typ. (VCE=-6.0V,IC=-1.0mA) • High Voltage: VCEO=-50V. APPLICATIONS • Audio frequency, general purpose amplifier.	SKTECHNOLGYSHIKE Electronics 时科广东时科微实业有限公司	SKTECHNOLGY
2SA812	Plastic-Encap sulate Transistors FEATURES Complementary to 2SC1623 High DC Current Gain: hFE=200 TYP.(VCE=-6V,IC=-1mA) High Voltage: Vceo=-50V	GWSEMI 唯圣电子	GWSEMI
2SA812	PNP Silicon Epitaxial Transistor Features ● High DC Current Gain: hFE = 200 TYP. (VCE = -6.0 V, IC = -1.0 mA) ● High Voltage: VCEO = -50 V	YFWDIODE 佑风微	YFWDIODE
2SA812	Plastic-Encapsulate Transistors FEATURES Complementary to 2SC1623 High DC Current Gain: hFE=200 TYP.(VCE=-6V,IC=-1mA) High Voltage: Vceo=-50V	HOTTECH 合科泰	HOTTECH
2SA812	Plastic-Encapsulate Transistors Features: 1. hFE is high, hFE=200(TYP) VCE=-6V, IC=-1mA; 2. High voltage, VCEO=-50V; Applications: For general amplification, it is complementary to 2SC1623.	SHENZHENSLS 三联盛	SHENZHENSLS
2SA812	Plastic-Encapsulated Transistors TRANSISTOR (PNP) FEATURES Power dissipation PCM : 0.2 W (Tamb=25℃) Collector current ICM : -0.1 A Collector-base voltage V(BR)CBO : -60 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃	TEL	TEL
2SA812A	SILICON TRANSISTOR PNP SILICON EPITAXIAL TRANSISTOR MINI MOLD FEATURES • Complementary to 2SC1623A • High DC Current Gain: hFE = 200 TYP. (VCE = −6.0 V, IC = −1.0 mA) • High Voltage: VCEO = −50 V ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Collector to Base Voltage VCBO −60 V Collector to Emitter Voltage VCEO −50	RENESAS 瑞萨	RENESAS
2SA812K	PNP Epitaxial Planar Transistor FEATURES • Complementary to 2SC1623K • High DC Current Gain: hFE = 200 TYP. (VCE = -6V, IC = -1mA) • High Voltage: VCEO = -50V	SECOS 喜可士	SECOS
2SA812-M4	PNP Silicon Epitaxial Transistors Features • Lead Free Finish/RoHS Compliant (P Suffix designates RoHS Compliant. See ordering information) • High DC Current Gain:90Љ hFEЉ 600.(VCE=-6.0V, IC=-1mA) • High voltage: VCEO=-50V • Epoxy meets UL 94 V-0 flammability rating • Moisure Sensitivity Level 1 • Halogen free available	MCC	MCC
2SA812-M5	PNP Silicon Epitaxial Transistors Features • Lead Free Finish/RoHS Compliant (P Suffix designates RoHS Compliant. See ordering information) • High DC Current Gain:90Љ hFEЉ 600.(VCE=-6.0V, IC=-1mA) • High voltage: VCEO=-50V • Epoxy meets UL 94 V-0 flammability rating • Moisure Sensitivity Level 1 • Halogen free available	MCC	MCC
2SA812-M6	PNP Silicon Epitaxial Transistors Features • Lead Free Finish/RoHS Compliant (P Suffix designates RoHS Compliant. See ordering information) • High DC Current Gain:90Љ hFEЉ 600.(VCE=-6.0V, IC=-1mA) • High voltage: VCEO=-50V • Epoxy meets UL 94 V-0 flammability rating • Moisure Sensitivity Level 1 • Halogen free available	MCC	MCC
2SA812-M7	PNP Silicon Epitaxial Transistors Features • Lead Free Finish/RoHS Compliant (P Suffix designates RoHS Compliant. See ordering information) • High DC Current Gain:90Љ hFEЉ 600.(VCE=-6.0V, IC=-1mA) • High voltage: VCEO=-50V • Epoxy meets UL 94 V-0 flammability rating • Moisure Sensitivity Level 1 • Halogen free available	MCC	MCC
2SA812Q	General Purpose Transistors FEATURE ● High Voltage: VCEO = -50 V. ● Epitaxial planar type. ● NPN complement: 2SC1623 ● We declare that the material of product compliance with RoHS requirements. ● S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified	YEASHIN 亚昕科技	YEASHIN
2SA812R	General Purpose Transistors FEATURE ● High Voltage: VCEO = -50 V. ● Epitaxial planar type. ● NPN complement: 2SC1623 ● We declare that the material of product compliance with RoHS requirements. ● S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified	YEASHIN 亚昕科技	YEASHIN
2SA812S	General Purpose Transistors FEATURE ● High Voltage: VCEO = -50 V. ● Epitaxial planar type. ● NPN complement: 2SC1623 ● We declare that the material of product compliance with RoHS requirements. ● S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified	YEASHIN 亚昕科技	YEASHIN
2SA812-T1B	AUDIO FREQUENCY,GENERAL PURPOSE AMPLIFIER PNP SILICON EPITAXIAL TRANSISTOR MINI MOLD FEATURES • Complementary to 2SC1623 • High DC Current Gain: hFE= 200 TYP. (VCE= −6.0 V, IC= −1.0 mA) ) • High Voltage: VCEO= −50 V	NEC 瑞萨	NEC
2SA814	SILICON PNP EPITAXIAL BASE MESA TYPE	TOSHIBA 东芝	TOSHIBA
2SA814	Silicon PNP Power Transistors DESCRIPTION • With TO-220 package • Complement to type 2SC1624/1625 • High breakdown voltage APPLICATIONS • Medium power amplifier applications • Driver stage amplifier applications	SAVANTIC	SAVANTIC
2SA814	Silicon PNP Power Transistors DESCRIPTION • With TO-220 package • Complement to type 2SC1624/1625 • High breakdown voltage APPLICATIONS • Medium power amplifier applications • Driver stage amplifier applications	ISC 无锡固电	ISC
2SA814	Silicon PNP Power Transistors DESCRIPTION • With TO-220 package • Complement to type 2SC1624/1625 • High breakdown voltage APPLICATIONS • Medium power amplifier applications • Driver stage amplifier applications	JMNIC 锦美电子	JMNIC
2SA815	Silicon PNP Power Transistors DESCRIPTION • With TO-220 package • Complement to type 2SC1624/1625 • High breakdown voltage APPLICATIONS • Medium power amplifier applications • Driver stage amplifier applications	ISC 无锡固电	ISC
2SA815	Silicon PNP Power Transistors DESCRIPTION • With TO-220 package • Complement to type 2SC1624/1625 • High breakdown voltage APPLICATIONS • Medium power amplifier applications • Driver stage amplifier applications	JMNIC 锦美电子	JMNIC
2SA815	Silicon PNP Power Transistors DESCRIPTION • With TO-220 package • Complement to type 2SC1624/1625 • High breakdown voltage APPLICATIONS • Medium power amplifier applications • Driver stage amplifier applications	SAVANTIC	SAVANTIC
2SA815	SILICON PNP EPITAXIAL BASE MESA TYPE	TOSHIBA 东芝	TOSHIBA
2SA816	PNP/NPN SILICON PLANAR EPITAXIAL POWER TRANSISTOR	MICRO-ELECTRONICS	MICRO-ELECTRONICS
2SA817	TRANSISTOR (AUDIO FREQUENCY AMPLIFIER APPLICATIONS) Audio Frequency Amplifier Applications • Complementary to 2SC1627. • Suitable for driver of 20~25 watts audio amplifiers.	TOSHIBA 东芝	TOSHIBA
2SA817A	TRANSISTOR (DRIVER STAGE, VOLTAGE AMPLIFIER APPLICATIONS) Driver-Stage Amplifier Applications Voltage Amplifier Applications • Complementary to 2SC1627A. • Driver stage application of 30 to 35 watts amplifiers.	TOSHIBA 东芝	TOSHIBA
2SA817A	Bipolar Small-Signal Transistors MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf	TOSHIBA 东芝	TOSHIBA
2SA817A	TRANSISTOR (PNP) TRANSISTOR (PNP) FEATURES • Complementary to 2SC1627A. • Driver Stage Application of 30 to 35 Watts Amplifiers.	KOOCHIN 灏展电子	KOOCHIN
2SA817A	TO-92MOD Plastic-Encapsulate Transistors TRANSISTOR (PNP) FEATURES • Complementary to 2SC1627A. • Driver Stage Application of 30 to 35 Watts Amplifiers.	JIANGSU 长电科技	JIANGSU
2SA817A	Silicon PNP transistor in a TO-92LM Plastic Package Descriptions Silicon PNP transistor in a TO-92LM Plastic Package. Features Driver stage of 30 to 35 watts application, complementary pair with 2SC1627A. Applications Driver stage amplifier and voltage amplifier.	FOSHAN 蓝箭电子	FOSHAN
2SA811A-T1B-A	Old Company Name in Catalogs and Other Documents 文件：308.31 Kbytes Page：6 Pages	RENESAS 瑞萨	RENESAS
2SA812	SOT-23 BIPOLAR TRANSISTORS TRANSISTOR(PNP) 文件：294.38 Kbytes Page：2 Pages	RECTRON 丽正国际	RECTRON
2SA812	Silicon Epitaxial Planar Transistor 文件：219.91 Kbytes Page：4 Pages	BILIN 银河微电	BILIN
2SA812	Silicon Epitaxial Planar Transistor 文件：175.65 Kbytes Page：4 Pages	BILIN 银河微电	BILIN
2SA812	PNP Plastic-Encapsulate Transistors 文件：1.70898 Mbytes Page：5 Pages	JINGHENG 晶恒	JINGHENG
2SA812	小信号三极管	JIEJIE 捷捷微电	JIEJIE
2SA812	晶体管	JSCJ 长晶科技	JSCJ
2SA812	Small Signal Bipolar Transistors	RENESAS 瑞萨	RENESAS
2SA812_0712	Silicon Epitaxial Planar Transistor 文件：230.77 Kbytes Page：4 Pages	BILIN 银河微电	BILIN
2SA812_12	Silicon Epitaxial Planar Transistor 文件：219.91 Kbytes Page：4 Pages	BILIN 银河微电	BILIN
2SA812_15	PNP SILICON EPITAXIAL TRANSISTOR MINI MOLD 文件：334.39 Kbytes Page：6 Pages	RENESAS 瑞萨	RENESAS
2SA812_15	TRANSISTOR 文件：136.58 Kbytes Page：1 Pages	WINNERJOIN 永而佳	WINNERJOIN
2SA812_15	PNP Transistors 文件：877.77 Kbytes Page：2 Pages	KEXIN 科信电子	KEXIN
2SA812_17	Silicon Epitaxial Planar Transistor 文件：175.65 Kbytes Page：4 Pages	BILIN 银河微电	BILIN

2SA81产品属性

类型
描述
型号
2SA81
制造商
Distributed By MCM
功能描述
SUB ONLY NEC TRANSISTOR SC-59-120V -.05A .15W EBC SRFCE MT

2SA81供应商更多...

更新时间：2025-12-25 16:59:00

IC供应商	芯片型号	品牌	批号	封装	库存	备注	价格
深圳市科恒伟业电子有限公司	2SA811A-T1B-A	NEC	2450+	SOT-23	8850	只做原装正品假一赔十为客户做到零风险!!	询价
深圳市华斯顿科技有限公司	2SA811A/C16	NEC	25+23+	Sot-23	32892	绝对原装正品全新进口深圳现货	询价
贸泽芯城（深圳）电子科技有限公司	2SA811A-T1B	NEC	23+	SOT-23	9000	原厂授权代理,海外优势订货渠道。可提供大量库存,详	询价
深圳市坤融电子科技有限公司	2SA811A	RENESAS/瑞萨	2025+	SOT-23	5000	原装进口价格优请找坤融电子!	询价
深圳市一线半导体有限公司	2SA811A	NEC	24+	SOT-23	21200	新进库存/原装	询价
深圳市中飞凌科技有限公司	2SA811A-T2B	RENESAS	26+	SOT23	360000	进口原装现货	询价
深圳市拓亿芯电子有限公司	2SA811A-T2B	NEC	25+	SOT23	30000	代理全新原装现货,价格优势	询价
洪芯国际半导体（深圳）有限公司	2SA811A/C17	NEC	25+	原厂原封装	86720	全新原装进口现货价格优惠本公司承诺原装正品假一赔	询价
深圳市佳鑫美电子科技有限公司	2SA811A-L	NEC	25+	TSOP	2987	只售原装自家现货!诚信经营!欢迎来电	询价
深圳市正迈科技有限公司	2SA811A-T1B	NEC	23+	NA	19854	专业电子元器件供应链正迈科技特价代理特价，原装元器件供应，支持开发样品	询价

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2SA81规格书下载地址

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2SA1037-R-TP
进口代理
2024-11-1
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2SA928AL-TO92NLB-Y-TG
2023-2-1
2SA1930Q现货销售，欢迎来电咨询~
2SP0115T2C0-12
2022-4-15
2SA812-T1B-A/S6 原装正品现货
支持实单价格优势有单必成
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2SA2198
2SA2198，全新原装当天发货或门市自取0755-82732291.
2020-4-24
2SB1386-P-PNP硅外延晶体管
2SB1386-P :PNP硅外延晶体管的特点如下： ·低集电极饱和电压 ·Execllent电流增益特性 ·无铅完成/符合RoHS（“P”字后缀指定符合RoHS标准。见订购信息） ·环氧符合UL 94V -0阻燃等级 · Moisure敏感度等级1 2SB1386-P/2SB1386-Q/2SB1386-R 是微型商业组件公司的产品型号
2012-11-9

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2SA81晶体管资料

2SA81产品属性

2SA81供应商更多...

2SA81芯片相关品牌

2SA81规格书下载地址

2SA81参数引脚图相关

2SA81数据表相关新闻

2SA1037-R-TP

2SA928AL-TO92NLB-Y-TG

2SA1930Q现货销售，欢迎来电咨询~

2SA812-T1B-A/S6 原装正品现货

2SA2198

2SB1386-P-PNP硅外延晶体管

DdatasheetPDF页码索引