丝印代码：HFE；SILICON TRANSISTOR

PNP SILICON EPITAXIAL TRANSISTOR MINI MOLD FEATURES • Complementary to 2SC1623A • High DC Current Gain: hFE = 200 TYP. (VCE = −6.0 V, IC = −1.0 mA) • High Voltage: VCEO = −50 V ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Collector to Base Voltage VCBO −60 V Collector to Emitter Voltage VCEO −50

Transistor-Bipolar Small Signal Transistors

AUDIO FREQUENCY,GENERAL PURPOSE AMPLIFIER PNP SILICON EPITAXIAL TRANSISTOR MINI MOLD

FEATURES • Complementary to 2SC1623 • High DC Current Gain: hFE= 200 TYP. (VCE= −6.0 V, IC= −1.0 mA) ) • High Voltage: VCEO= −50 V

Plastic-Encapsulated Transistors

TRANSISTOR (PNP) FEATURES Power dissipation PCM : 0.2 W (Tamb=25℃) Collector current ICM : -0.1 A Collector-base voltage V(BR)CBO : -60 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃

丝印代码：M4；Silicon Epitaxial Planar Transistor

FEATURES ● Commplementary to 2SC1623. ● High DC current gain:hFE=200typ. (VCE=-6.0V,IC=-1.0mA) ● High Voltage: VCEO=-50V. APPLICATIONS ● Audio frequency, general purpose amplifier.

PNP Silicon Epitaxial Transistor

Features ● High DC Current Gain: hFE = 200 TYP. (VCE = -6.0 V, IC = -1.0 mA) ● High Voltage: VCEO = -50 V

PNP Epitaxial Planar Transistor

FEATURES • Complementary to 2SC1623K • High DC Current Gain: hFE = 200 TYP. (VCE = -6V, IC = -1mA) • High Voltage: VCEO = -50V