PNP SILICON EPITAXIAL TRANSISTOR

MINI MOLD

FEATURES

• Complementary to 2SC1623

• High DC Current Gain: hFE = 200 TYP. (VCE = −6.0 V, IC = −1.0 mA)

• High Voltage: VCEO = −50 V

ABSOLUTE MAXIMUM RATINGS (TA = 25°C)

Collector to Base Voltage VCBO −60 V

Collector to Emitter Voltage VCEO −50 V

Emitter to Base Voltage VEBO −5.0 V

Collector Current (DC) IC −100 mA

Total Power Dissipation PT 200 mW

Junction Temperature Tj 150 °C

Storage Temperature Range Tstg −55 to +150 °C