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2SA812晶体管资料

2SA812别名：2SA812三极管、2SA812晶体管、2SA812晶体三极管
2SA812生产厂家：日本日电公司
2SA812制作材料：Si-PNP
2SA812性质：表面帖装型（SMD）_通用型（Uni）
2SA812封装形式：贴片封装
2SA812极限工作电压：60V
2SA812最大电流允许值：0.1A
2SA812最大工作频率：180MHZ
2SA812引脚数：3
2SA812最大耗散功率：0.2W
2SA812放大倍数：
2SA812图片代号：H-15
2SA812vtest：60
2SA812htest：180000000
2SA812atest：0.1
2SA812wtest：0.2

2SA812代换 2SA812用什么型号代替：BC856,BCW68,BCW89,BCX17,2SA1311,3CG110C,

型号	功能描述	生产厂家企业	LOGO
2SA812	AUDIO FREQUENCY,GENERAL PURPOSE AMPLIFIER PNP SILICON EPITAXIAL TRANSISTOR MINI MOLD FEATURES • Complementary to 2SC1623 • High DC Current Gain: hFE= 200 TYP. (VCE= −6.0 V, IC= −1.0 mA) ) • High Voltage: VCEO= −50 V	NEC 瑞萨	NEC
2SA812	SILICON TRANSISTOR PNP SILICON EPITAXIAL TRANSISTOR MINI MOLD FEATURES • Complementary to 2SC1623 • High DC Current Gain: hFE = 200 TYP. (VCE = −6.0 V, IC = −1.0 mA) • High Voltage: VCEO = −50 V ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Collector to Base Voltage VCBO −60 V Collector to Emitter Voltage VCEO −50	RENESAS 瑞萨	RENESAS
2SA812	PNP General Purpose Transistors PNP General Purpose Transistors P/b Lead(Pb)-Free	WEITRON	WEITRON
2SA812	Silicon Epitaxial Planar Transistor FEATURES ● Commplementary to 2SC1623. ● High DC current gain:hFE=200typ. (VCE=-6.0V,IC=-1.0mA) ● High Voltage: VCEO=-50V. APPLICATIONS ● Audio frequency, general purpose amplifier.	BILIN 银河微电	BILIN
2SA812	TECHNICAL SPECIFICATIONS OF PNP EPITAXIAL PLANAR TRANSISTOR Description Designed for audio frequency amplifier applications.	DCCOM 道全	DCCOM
2SA812	PNP General Purpose Transistor ■ FEATURES PNP General Purpose Transistor	GSME 桂微	GSME
2SA812	TRANSISTOR(PNP) FEATURES ● Complementary to 2SC1623 ● High DC Current Gain: hFE=200 TYP.(VCE=-6V,IC=-1mA) ● High Voltage: Vceo=-50V	HTSEMI 金誉半导体	HTSEMI
2SA812	SOT-23 Plastic-Encapsulate Transistors TRANSISTOR (PNP) FEATURES • Complementary to 2SC1623 • High DC Current Gain: hFE=200 TYP.(VCE=-6V,IC=-1mA) • High Voltage: Vceo=-50V	JIANGSU 长电科技	JIANGSU
2SA812	PNP Silicon Epitaxial Transistor Features ● High DC Current Gain: hFE = 200 TYP. (VCE = -6.0 V, IC = -1.0 mA) ● High Voltage: VCEO = -50 V	KEXIN 科信电子	KEXIN
2SA812	Silicon Epitaxial Planar Transistor FEATURES ● Commplementary to 2SC1623. ● High DC current gain:hFE=200typ. (VCE=-6.0V,IC=-1.0mA) ● High Voltage: VCEO=-50V. APPLICATIONS ● Audio frequency, general purpose amplifier.	LUGUANG 鲁光电子	LUGUANG
2SA812	SOT-23 Plastic-Encapsulate Transistors FEATURES Complementary to 2SC1623 High DC Current Gain: hFE=200 TYP.(VCE=-6V,IC=-1mA) High Voltage: Vceo=-50V	DGNJDZ 南晶电子	DGNJDZ
2SA812	TRANSISTOR (PNP) FEATURES Power dissipation PCM : 0.2 W (Tamb=25℃) Collector current ICM : -0.1 A Collector-base voltage V(BR)CBO : -60 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃	WINNERJOIN 永而佳	WINNERJOIN
2SA812	Silicon PNP transistor in a SOT-23 Plastic Package Descriptions Silicon PNP transistor in a SOT-23 Plastic Package. Features Complementary pair with 2SC1623. Applications Audio frequency amplifier application.	FOSHAN 蓝箭电子	FOSHAN
2SA812	Silicon Epitaxial Planar Transistor FEATURES • Commplementary to 2SC1623. • High DC current gain:hFE=200typ. (VCE=-6.0V,IC=-1.0mA) • High Voltage: VCEO=-50V. APPLICATIONS • Audio frequency, general purpose amplifier.	SKTECHNOLGYSHIKE Electronics 时科广东时科微实业有限公司	SKTECHNOLGY
2SA812	Plastic-Encap sulate Transistors FEATURES Complementary to 2SC1623 High DC Current Gain: hFE=200 TYP.(VCE=-6V,IC=-1mA) High Voltage: Vceo=-50V	GWSEMI 唯圣电子	GWSEMI
2SA812	PNP Silicon Epitaxial Transistor Features ● High DC Current Gain: hFE = 200 TYP. (VCE = -6.0 V, IC = -1.0 mA) ● High Voltage: VCEO = -50 V	YFWDIODE 佑风微	YFWDIODE
2SA812	Plastic-Encapsulate Transistors FEATURES Complementary to 2SC1623 High DC Current Gain: hFE=200 TYP.(VCE=-6V,IC=-1mA) High Voltage: Vceo=-50V	HOTTECH 合科泰	HOTTECH
2SA812	Plastic-Encapsulate Transistors Features: 1. hFE is high, hFE=200(TYP) VCE=-6V, IC=-1mA; 2. High voltage, VCEO=-50V; Applications: For general amplification, it is complementary to 2SC1623.	SHENZHENSLS 三联盛	SHENZHENSLS
2SA812	Plastic-Encapsulated Transistors TRANSISTOR (PNP) FEATURES Power dissipation PCM : 0.2 W (Tamb=25℃) Collector current ICM : -0.1 A Collector-base voltage V(BR)CBO : -60 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃	TEL	TEL
2SA812	PNP Plastic-Encapsulate Transistors 文件：1.70898 Mbytes Page：5 Pages	JINGHENG 晶恒	JINGHENG
2SA812	PNP小信号三极管	CHINABASE 创基电子	CHINABASE
2SA812	小信号三极管	JIEJIE 捷捷微电	JIEJIE
2SA812	晶体管	JSCJ 长晶科技	JSCJ
2SA812	Silicon Epitaxial Planar Transistor 文件：219.91 Kbytes Page：4 Pages	BILIN 银河微电	BILIN
2SA812	Silicon Epitaxial Planar Transistor 文件：175.65 Kbytes Page：4 Pages	BILIN 银河微电	BILIN
2SA812	SOT-23 BIPOLAR TRANSISTORS TRANSISTOR(PNP) 文件：294.38 Kbytes Page：2 Pages	RECTRON 丽正国际	RECTRON
2SA812A	SILICON TRANSISTOR PNP SILICON EPITAXIAL TRANSISTOR MINI MOLD FEATURES • Complementary to 2SC1623A • High DC Current Gain: hFE = 200 TYP. (VCE = −6.0 V, IC = −1.0 mA) • High Voltage: VCEO = −50 V ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Collector to Base Voltage VCBO −60 V Collector to Emitter Voltage VCEO −50	RENESAS 瑞萨	RENESAS
2SA812K	PNP Epitaxial Planar Transistor FEATURES • Complementary to 2SC1623K • High DC Current Gain: hFE = 200 TYP. (VCE = -6V, IC = -1mA) • High Voltage: VCEO = -50V	SECOS 喜可士	SECOS
2SA812-M4	PNP Silicon Epitaxial Transistors Features • Lead Free Finish/RoHS Compliant (P Suffix designates RoHS Compliant. See ordering information) • High DC Current Gain:90Љ hFEЉ 600.(VCE=-6.0V, IC=-1mA) • High voltage: VCEO=-50V • Epoxy meets UL 94 V-0 flammability rating • Moisure Sensitivity Level 1 • Halogen free available	MCC	MCC
2SA812-M5	PNP Silicon Epitaxial Transistors Features • Lead Free Finish/RoHS Compliant (P Suffix designates RoHS Compliant. See ordering information) • High DC Current Gain:90Љ hFEЉ 600.(VCE=-6.0V, IC=-1mA) • High voltage: VCEO=-50V • Epoxy meets UL 94 V-0 flammability rating • Moisure Sensitivity Level 1 • Halogen free available	MCC	MCC
2SA812-M6	PNP Silicon Epitaxial Transistors Features • Lead Free Finish/RoHS Compliant (P Suffix designates RoHS Compliant. See ordering information) • High DC Current Gain:90Љ hFEЉ 600.(VCE=-6.0V, IC=-1mA) • High voltage: VCEO=-50V • Epoxy meets UL 94 V-0 flammability rating • Moisure Sensitivity Level 1 • Halogen free available	MCC	MCC
2SA812-M7	PNP Silicon Epitaxial Transistors Features • Lead Free Finish/RoHS Compliant (P Suffix designates RoHS Compliant. See ordering information) • High DC Current Gain:90Љ hFEЉ 600.(VCE=-6.0V, IC=-1mA) • High voltage: VCEO=-50V • Epoxy meets UL 94 V-0 flammability rating • Moisure Sensitivity Level 1 • Halogen free available	MCC	MCC
2SA812Q	General Purpose Transistors FEATURE ● High Voltage: VCEO = -50 V. ● Epitaxial planar type. ● NPN complement: 2SC1623 ● We declare that the material of product compliance with RoHS requirements. ● S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified	YEASHIN 亚昕科技	YEASHIN
2SA812R	General Purpose Transistors FEATURE ● High Voltage: VCEO = -50 V. ● Epitaxial planar type. ● NPN complement: 2SC1623 ● We declare that the material of product compliance with RoHS requirements. ● S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified	YEASHIN 亚昕科技	YEASHIN
2SA812S	General Purpose Transistors FEATURE ● High Voltage: VCEO = -50 V. ● Epitaxial planar type. ● NPN complement: 2SC1623 ● We declare that the material of product compliance with RoHS requirements. ● S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified	YEASHIN 亚昕科技	YEASHIN
2SA812-T1B	AUDIO FREQUENCY,GENERAL PURPOSE AMPLIFIER PNP SILICON EPITAXIAL TRANSISTOR MINI MOLD FEATURES • Complementary to 2SC1623 • High DC Current Gain: hFE= 200 TYP. (VCE= −6.0 V, IC= −1.0 mA) ) • High Voltage: VCEO= −50 V	NEC 瑞萨	NEC
2SA812_0712	Silicon Epitaxial Planar Transistor 文件：230.77 Kbytes Page：4 Pages	BILIN 银河微电	BILIN
2SA812_12	Silicon Epitaxial Planar Transistor 文件：219.91 Kbytes Page：4 Pages	BILIN 银河微电	BILIN
2SA812_15	PNP Transistors 文件：877.77 Kbytes Page：2 Pages	KEXIN 科信电子	KEXIN
2SA812_15	PNP SILICON EPITAXIAL TRANSISTOR MINI MOLD 文件：334.39 Kbytes Page：6 Pages	RENESAS 瑞萨	RENESAS
2SA812_15	TRANSISTOR 文件：136.58 Kbytes Page：1 Pages	WINNERJOIN 永而佳	WINNERJOIN
2SA812_17	Silicon Epitaxial Planar Transistor 文件：175.65 Kbytes Page：4 Pages	BILIN 银河微电	BILIN
2SA812-HF_15	PNP Transistors 文件：1.03939 Mbytes Page：2 Pages	KEXIN 科信电子	KEXIN
2SA812K_15	PNP Epitaxial Planar Transistor 文件：249.25 Kbytes Page：2 Pages	SECOS 喜可士	SECOS
2SA812-M4	PNP Transistors 文件：877.77 Kbytes Page：2 Pages	KEXIN 科信电子	KEXIN
2SA812-M4	PNP Silicon Epitaxial Transistors 文件：398.13 Kbytes Page：4 Pages	MCC	MCC
2SA812-M4_13	PNP Silicon Epitaxial Transistors 文件：398.13 Kbytes Page：4 Pages	MCC	MCC
2SA812-M4-AP	封装/外壳：TO-236-3，SC-59，SOT-23-3 包装：带盒（TB）描述：TRANS PNP 50V 0.1A SOT23 分立半导体产品晶体管 - 双极性晶体管（BJT）- 单个	MCC	MCC
2SA812-M4-HF	PNP Transistors 文件：1.03939 Mbytes Page：2 Pages	KEXIN 科信电子	KEXIN
2SA812-M5	PNP Transistors 文件：877.77 Kbytes Page：2 Pages	KEXIN 科信电子	KEXIN
2SA812-M5	PNP Silicon Epitaxial Transistors 文件：398.13 Kbytes Page：4 Pages	MCC	MCC
2SA812-M5-AP	封装/外壳：TO-236-3，SC-59，SOT-23-3 包装：带盒（TB）描述：TRANS PNP 50V 0.1A SOT23 分立半导体产品晶体管 - 双极性晶体管（BJT）- 单个	MCC	MCC
2SA812-M5-HF	PNP Transistors 文件：1.03939 Mbytes Page：2 Pages	KEXIN 科信电子	KEXIN
2SA812-M6	PNP Transistors 文件：877.77 Kbytes Page：2 Pages	KEXIN 科信电子	KEXIN
2SA812-M6	PNP Silicon Epitaxial Transistors 文件：398.13 Kbytes Page：4 Pages	MCC	MCC
2SA812-M6-HF	PNP Transistors 文件：1.03939 Mbytes Page：2 Pages	KEXIN 科信电子	KEXIN
2SA812-M7	PNP Transistors 文件：877.77 Kbytes Page：2 Pages	KEXIN 科信电子	KEXIN
2SA812-M7	PNP Silicon Epitaxial Transistors 文件：398.13 Kbytes Page：4 Pages	MCC	MCC
2SA812-M7-HF	PNP Transistors 文件：1.03939 Mbytes Page：2 Pages	KEXIN 科信电子	KEXIN
2SA812XLT1	General Purpose Transistors 文件：351.31 Kbytes Page：5 Pages	WILLAS 威伦电子	WILLAS

2SA812产品属性

类型
描述
型号
2SA812
制造商
Panasonic Industrial Company
功能描述
TRANSISTOR

2SA812供应商更多...

更新时间：2025-12-25 11:56:00

IC供应商	芯片型号	品牌	批号	封装	库存	备注	价格
贸泽芯城（深圳）电子科技有限公司	2SA812	长电/长晶	23+	SOT-23	120000	一级代理,专注军工、汽车、医疗、工业、新能源、电力	询价
中天科工半导体（深圳）有限公司	2SA812-T1B	NEC进口	25+	原装	32000	NEC进口全新特价2SA812-T1B即刻询购立享优惠#长期有货	询价
深圳市坤融电子科技有限公司	2SA812	RENESAS/瑞萨	2025+	SOT-23	5000	原装进口价格优请找坤融电子!	询价
深圳市凌旭科技有限公司	2SA812-T2B/JM	NEC	2016+	SOT23-3	4000	只做原装,假一罚十,公司可开17%增值税发票!	询价
深圳市能元时代电子有限公司	2SA812-T1B-A/S6	RENESAS/瑞萨	23+	na	28650	主营品牌深圳百分百原装现货假一罚十绝对价优	询价
深圳市正纳电子有限公司	2SA812B-T1B	Renesas(瑞萨)	23+	原厂封装	32078	10年以上分销商,原装进口件,服务型企业	询价
深圳市高捷芯城科技有限公司	2SA812-T1B-A/S6	Renesas(瑞萨)	24+	标准封装	7209	支持大陆交货,美金交易。原装现货库存。	询价
瀚佳科技(深圳)有限公司	2SA812M6	CJ	24+	SOT23	9800	一级代理/全新原装现货/长期供应!	询价
深圳市金华微盛电子有限公司	2SA812SLT1G	LRC	19+	SOT-23	35880		询价
深圳市中飞凌科技有限公司	2SA812T1BA	RENESAS	26+	SOT23-3	360000	进口原装现货	询价

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2SB1386-P-PNP硅外延晶体管
2SB1386-P :PNP硅外延晶体管的特点如下： ·低集电极饱和电压 ·Execllent电流增益特性 ·无铅完成/符合RoHS（“P”字后缀指定符合RoHS标准。见订购信息） ·环氧符合UL 94V -0阻燃等级 · Moisure敏感度等级1 2SB1386-P/2SB1386-Q/2SB1386-R 是微型商业组件公司的产品型号
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2SA812晶体管资料

2SA812产品属性

2SA812供应商更多...

2SA812芯片相关品牌

2SA812规格书下载地址

2SA812参数引脚图相关

2SA812数据表相关新闻

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2SA2198

2SB1386-P-PNP硅外延晶体管

DdatasheetPDF页码索引