PNP Epitaxial Planar Transistor

FEATURES • Complementary to 2SC1623K • High DC Current Gain: hFE = 200 TYP. (VCE = -6V, IC = -1mA) • High Voltage: VCEO = -50V

PNP Silicon Epitaxial Transistor

Features ● High DC Current Gain: hFE = 200 TYP. (VCE = -6.0 V, IC = -1.0 mA) ● High Voltage: VCEO = -50 V

TRANSISTOR(PNP)

FEATURES ● Complementary to 2SC1623 ● High DC Current Gain: hFE=200 TYP.(VCE=-6V,IC=-1mA) ● High Voltage: Vceo=-50V

AUDIO FREQUENCY,GENERAL PURPOSE AMPLIFIER PNP SILICON EPITAXIAL TRANSISTOR MINI MOLD

FEATURES • Complementary to 2SC1623 • High DC Current Gain: hFE= 200 TYP. (VCE= −6.0 V, IC= −1.0 mA) ) • High Voltage: VCEO= −50 V

Plastic-Encapsulated Transistors

TRANSISTOR (PNP) FEATURES Power dissipation PCM : 0.2 W (Tamb=25℃) Collector current ICM : -0.1 A Collector-base voltage V(BR)CBO : -60 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃

Silicon Epitaxial Planar Transistor

FEATURES ● Commplementary to 2SC1623. ● High DC current gain:hFE=200typ. (VCE=-6.0V,IC=-1.0mA) ● High Voltage: VCEO=-50V. APPLICATIONS ● Audio frequency, general purpose amplifier.

PNP Epitaxial Planar Transistor

文件：249.25 Kbytes Page：2 Pages