N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET

FEATURES * 60 Volt VCEO

N-Channel Enhancement Mode Field Effect Transistor

Description These N-channel enhancement mode field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. These products have been designed to minimize on-state resistance while providing rugged, reliable, and fast switching performance. They can be used

N-Channel 60-V (D-S) MOSFET

FEATURES ● Low On-Resistance: 2.5 Ω ● Low Threshold: 2.1 V ● Low Input Capacitance: 22 pF ● Fast Switching Speed: 7 ns ● Low Input and Output Leakage BENEFITS ● Low Offset Voltage ● Low-Voltage Operation ● Easily Driven Without Buffer ● High-Speed Circuits ● Low Error Voltage APPLICATI

N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Description • N-channel enhancement mode field effect transistor, designed for high speed pulsed amplifier and driver applications, which is manufactored by the N-Channel DMOS process. Features • High density cell design for low RDS(ON). • Voltage controlled small signal switching. • Rugged a

N-Channel Enhancement-Mode Vertical DMOS FETs

General Description The Supertex 2N7002 is an enhancement-mode (normally off) transistor that utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors, and the h

N Channel MOSFET ESD Protected 2000V

INTERFACE AND SWITCHING APPLICATION. FEATURES • ESD Protected 2000V. • High density cell design for low RDS(ON). • Voltage controlled small signal switch. • Rugged and reliable. • High saturation current capablity.

N-Channel Enhancement Mode Field Effect Transistor

Features • High density cell design for Low RDS(ON) • Voltage controlled small signal switch • Rugged and reliable • High saturation current capability • ESD protected up to 2KV • Epoxy meets UL 94 V-0 flammability rating • Moisture Sensitivity Level 1 • Halogen free available upon request

Dual N-Channel MOSFET

Features: * Low On-Resistance * Fast Switching Speed * Low-voltage drive * Easily designed drive circuits * ESD Protected:2000V Mechanical Data: *Case: SOT-363, Molded Plastic *Case Material-UL Flammability Rating 94V-0 *Terminals: Solderable per MIL-STD-202, Method 208 *Weight: 0.006 gr

60V ESD Protected N-Channel Enhancement Mode MOSFET

RDS(ON), VGS@10V, IDS@500mA=2Ω RDS(ON), VGS@4.5V, IDS@200mA=3Ω FEATURES • Advanced Trench Process Technology • Ultra Low On Resistance : 2Ω • Fast Switching Speed : 20ns • Low Input and Output Leakage Current • 2KV ESD Protection • Specially Designed for High Speed Circuit, Battery Operate

60V N-Channel Enhancement Mode MOSFET - ESD Protected

FEATURES • RDS(ON), VGS@10V,IDS@500mA=3Ω • RDS(ON), VGS@4.5V,IDS@200mA=4Ω • Advanced Trench Process Technology • High Density Cell Design For Ultra Low On-Resistance • Very Low Leakage Current In Off Condition • Specially Designed for Battery Operated Systems, Solid-State Relays Drivers : Re

Dual N-Channel Enhancement Mode Field Effect Transistor

Product Summary ● VDS 60V ● ID 0.34A ● RDS(ON)( at VGS=10V)

Dual N-Channel Small Signal MOSFET

FEATURES ● Low on-resistance ● Fast switching Speed ● Low-voltage drive ● Easily designed drive circuits ● ESD protected:2000V MECHANICAL DATA ● Case: SOT-363 ● Case Material-UL flammability rating 94V-0 ● Terminals: Solderable per MIL-STD-202, Method 208 ● Weight: 0.006 grams(approx.)

Plastic-Encapsulate MOSFET

Features  High density cell design for low RDS(ON)  Voltage controlled small signal switch  Rugged and reliable  High saturation current capability  ESD protected  Load Switch for Portable Devices.  DC/DC Converter.

60V N-Channel Enhancement Mode MOSFET - ESD Protected

FEATURES • RDS(ON), VGS@10V,IDS@500mA=3Ω • RDS(ON), VGS@4.5V,IDS@200mA=4Ω • Advanced Trench Process Technology • High Density Cell Design For Ultra Low On-Resistance • Very Low Leakage Current In Off Condition • Specially Designed for Battery Operated Systems, Solid-State Relays Drivers : R

N-Channel Enhancement Mode Field Effect Transistor

Features • High density cell design for Low RDS(ON) • Voltage controlled small signal switch • Rugged and reliable • High saturation current capability • ESD protected up to 2KV • Epoxy meets UL 94 V-0 flammability rating • Moisture Sensitivity Level 1 • Halogen free available upon request

60V N-Channel Enhancement Mode MOSFET - ESD Protected

FEATURES • RDS(ON), VGS@10V,IDS@500mA=3Ω • RDS(ON), VGS@4.5V,IDS@200mA=4Ω • Advanced Trench Process Technology • High Density Cell Design For Ultra Low On-Resistance • Very Low Leakage Current In Off Condition • Specially Designed for Battery Operated Systems, Solid-State Relays Drivers

60V N-Channel Enhancement Mode MOSFET – ESD Protected

Features  RDS(ON), VGS@10V, ID@500mA

60V N-Channel Enhancement Mode MOSFET – ESD Protected

Features  RDS(ON), VGS@10V, ID@500mA

60V N-Channel Enhancement Mode MOSFET – ESD Protected

Features  RDS(ON), VGS@10V, ID@500mA

Plastic-Encapsulate MOSFETS

FEATURE High density cell design for Low RDS（on） Voltage controlled small signal switch Rugged and reliable High saturation current capability ESD protected -CAR for automotive and other applications requiring unique site and control change requirements;AEC-Q101 qualified and PPAP ca

MOSFET

Features - High density cell design for low RDS(ON). - Voltage controlled small signal switch. - High saturation current capability. - ESD protected.

汽车电子MOSFET

Panar MOSFETs, US6, 60V, 0.3A

MV MOSFET

N-channel MOSFET

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Dual N-Channel Small Signal MOSFET

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Dual N-Channel 60 V (D-S) MOSFET

文件：945.33 Kbytes Page：6 Pages

60V N-Channel Enhancement Mode MOSFET - ESD Protected

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60V N-Channel Enhancement Mode MOSFET - ESD Protected

文件：170.62 Kbytes Page：6 Pages

Dual N-Channel Small Signal MOSFET

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MOSFET

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