2N7002KDW价格

参考价格:¥0.1560

型号:2N7002KDW 品牌:PANJIT 备注:这里有2N7002KDW多少钱,2025年最近7天走势,今日出价,今日竞价,2N7002KDW批发/采购报价,2N7002KDW行情走势销售排行榜,2N7002KDW报价。
型号 功能描述 生产厂家&企业 LOGO 操作
2N7002KDW

60VN-ChannelEnhancementModeMOSFET-ESDProtected

FEATURES •RDS(ON),VGS@10V,IDS@500mA=3Ω •RDS(ON),VGS@4.5V,IDS@200mA=4Ω •AdvancedTrenchProcessTechnology •HighDensityCellDesignForUltraLowOn-Resistance •VeryLowLeakageCurrentInOffCondition •SpeciallyDesignedforBatteryOperatedSystems,Solid-StateRelaysDrivers:Re

PANJITPan Jit International Inc.

強茂強茂股份有限公司

PANJIT
2N7002KDW

DualN-ChannelMOSFET

Features: *LowOn-Resistance *FastSwitchingSpeed *Low-voltagedrive *Easilydesigneddrivecircuits *ESDProtected:2000V MechanicalData: *Case:SOT-363,MoldedPlastic *CaseMaterial-ULFlammabilityRating94V-0 *Terminals:SolderableperMIL-STD-202,Method208 *Weight:0.006gr

WEITRON

Weitron Technology

WEITRON
2N7002KDW

DualN-ChannelSmallSignalMOSFET

FEATURES ●Lowon-resistance ●FastswitchingSpeed ●Low-voltagedrive ●Easilydesigneddrivecircuits ●ESDprotected:2000V MECHANICALDATA ●Case:SOT-363 ●CaseMaterial-ULflammabilityrating94V-0 ●Terminals:SolderableperMIL-STD-202,Method208 ●Weight:0.006grams(approx.)

SECOSSeCoS Halbleitertechnologie GmbH

喜可士喜可士股份有限公司

SECOS
2N7002KDW

60VESDProtectedN-ChannelEnhancementModeMOSFET

RDS(ON),VGS@10V,IDS@500mA=2Ω RDS(ON),VGS@4.5V,IDS@200mA=3Ω FEATURES •AdvancedTrenchProcessTechnology •UltraLowOnResistance:2Ω •FastSwitchingSpeed:20ns •LowInputandOutputLeakageCurrent •2KVESDProtection •SpeciallyDesignedforHighSpeedCircuit,BatteryOperate

HY

HY ELECTRONIC CORP.

HY
2N7002KDW

DualN-ChannelEnhancementModeFieldEffectTransistor

ProductSummary ●VDS60V ●ID0.34A ●RDS(ON)(atVGS=10V)

YANGJIEYangzhou yangjie electronic co., ltd

扬州扬杰电子扬州扬杰电子科技股份有限公司

YANGJIE
2N7002KDW

N-ChannelEnhancementModeFieldEffectTransistor

Features •HighdensitycelldesignforLowRDS(ON) •Voltagecontrolledsmallsignalswitch •Ruggedandreliable •Highsaturationcurrentcapability •ESDprotectedupto2KV •EpoxymeetsUL94V-0flammabilityrating •MoistureSensitivityLevel1 •Halogenfreeavailableuponrequest

MCCMicro Commercial Components

美微科美微科半导体股份有限公司

MCC
2N7002KDW

Plastic-EncapsulateMOSFET

Features HighdensitycelldesignforlowRDS(ON) Voltagecontrolledsmallsignalswitch Ruggedandreliable Highsaturationcurrentcapability ESDprotected LoadSwitchforPortableDevices. DC/DCConverter.

GWSEMIGoodwork Semiconductor Co., Ltd

唯圣电子唯圣电子有限公司

GWSEMI
2N7002KDW

DualN-Channel60V(D-S)MOSFET

文件:945.33 Kbytes Page:6 Pages

VBSEMIVBsemi Electronics Co.,Ltd

微碧半导体微碧半导体(台湾)有限公司

VBSEMI
2N7002KDW

DualN-ChannelSmallSignalMOSFET

文件:431.3 Kbytes Page:2 Pages

SECELECTRONICS

SEC Electronics Inc.

SECELECTRONICS
2N7002KDW

N-channelMOSFET

文件:1.31582 Mbytes Page:5 Pages

JIANGSUJiangsu Changjiang Electronics Technology Co., Ltd

长电科技江苏长电科技股份有限公司

JIANGSU

N-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR

Description •N-channelenhancementmodefieldeffecttransistor,designedforhighspeedpulsedamplifieranddriverapplications,whichismanufactoredbytheN-ChannelDMOSprocess. Features •HighdensitycelldesignforlowRDS(ON). •Voltagecontrolledsmallsignalswitching. •Ruggeda

PANJITPan Jit International Inc.

強茂強茂股份有限公司

PANJIT

N-ChannelEnhancement-ModeVerticalDMOSFETs

GeneralDescription TheSupertex2N7002isanenhancement-mode(normallyoff)transistorthatutilizesaverticalDMOSstructureandSupertex’swell-provensilicon-gatemanufacturingprocess.Thiscombinationproducesadevicewiththepowerhandlingcapabilitiesofbipolartransistors,andtheh

SUTEX

Supertex, Inc

SUTEX

N-CHANNELENHANCEMENTMODEVERTICALDMOSFET

FEATURES *60VoltVCEO

Zetex

Zetex Semiconductors

Zetex

N-Channel60-V(D-S)MOSFET

FEATURES ●LowOn-Resistance:2.5Ω ●LowThreshold:2.1V ●LowInputCapacitance:22pF ●FastSwitchingSpeed:7ns ●LowInputandOutputLeakage BENEFITS ●LowOffsetVoltage ●Low-VoltageOperation ●EasilyDrivenWithoutBuffer ●High-SpeedCircuits ●LowErrorVoltage APPLICATI

VishayVishay Siliconix

威世科技威世科技半导体

Vishay

N-ChannelEnhancementModeFieldEffectTransistor

Description TheseN-channelenhancementmodefieldeffecttransistorsareproducedusingFairchildsproprietary,highcelldensity,DMOStechnology.Theseproductshavebeendesignedtominimizeon-stateresistancewhileprovidingrugged,reliable,andfastswitchingperformance.Theycanbeused

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fairchild

60VN-ChannelEnhancementModeMOSFET-ESDProtected

FEATURES •RDS(ON),VGS@10V,IDS@500mA=3Ω •RDS(ON),VGS@4.5V,IDS@200mA=4Ω •AdvancedTrenchProcessTechnology •HighDensityCellDesignForUltraLowOn-Resistance •VeryLowLeakageCurrentInOffCondition •SpeciallyDesignedforBatteryOperatedSystems,Solid-StateRelays Drivers:R

PANJITPan Jit International Inc.

強茂強茂股份有限公司

PANJIT

N-ChannelEnhancementModeFieldEffectTransistor

Features •HighdensitycelldesignforLowRDS(ON) •Voltagecontrolledsmallsignalswitch •Ruggedandreliable •Highsaturationcurrentcapability •ESDprotectedupto2KV •EpoxymeetsUL94V-0flammabilityrating •MoistureSensitivityLevel1 •Halogenfreeavailableuponrequest

MCCMicro Commercial Components

美微科美微科半导体股份有限公司

MCC

60VN-ChannelEnhancementModeMOSFET-ESDProtected

FEATURES •RDS(ON),VGS@10V,IDS@500mA=3Ω •RDS(ON),VGS@4.5V,IDS@200mA=4Ω •AdvancedTrenchProcessTechnology •HighDensityCellDesignForUltraLowOn-Resistance •VeryLowLeakageCurrentInOffCondition •SpeciallyDesignedforBatteryOperatedSystems,Solid-StateRelays Drivers

PANJITPan Jit International Inc.

強茂強茂股份有限公司

PANJIT

60VN-ChannelEnhancementModeMOSFET–ESDProtected

Features RDS(ON),VGS@10V,ID@500mA

PANJITPan Jit International Inc.

強茂強茂股份有限公司

PANJIT

60VN-ChannelEnhancementModeMOSFET–ESDProtected

Features RDS(ON),VGS@10V,ID@500mA

PANJITPan Jit International Inc.

強茂強茂股份有限公司

PANJIT

60VN-ChannelEnhancementModeMOSFET–ESDProtected

Features RDS(ON),VGS@10V,ID@500mA

PANJITPan Jit International Inc.

強茂強茂股份有限公司

PANJIT

Plastic-EncapsulateMOSFETS

FEATURE HighdensitycelldesignforLowRDS(on) Voltagecontrolledsmallsignalswitch Ruggedandreliable Highsaturationcurrentcapability ESDprotected -CARforautomotiveandotherapplicationsrequiringunique siteandcontrolchangerequirements;AEC-Q101qualifiedand PPAPca

GWSEMIGoodwork Semiconductor Co., Ltd

唯圣电子唯圣电子有限公司

GWSEMI

60VN-ChannelEnhancementModeMOSFET-ESDProtected

文件:119.97 Kbytes Page:5 Pages

PANJITPan Jit International Inc.

強茂強茂股份有限公司

PANJIT

60VN-ChannelEnhancementModeMOSFET-ESDProtected

文件:170.62 Kbytes Page:6 Pages

PANJITPan Jit International Inc.

強茂強茂股份有限公司

PANJIT

DualN-ChannelSmallSignalMOSFET

文件:431.3 Kbytes Page:2 Pages

SECOSSeCoS Halbleitertechnologie GmbH

喜可士喜可士股份有限公司

SECOS

MOSFET

文件:150 Kbytes Page:5 Pages

COMCHIPComchip Technology

典琦典琦科技股份有限公司

COMCHIP

2N7002KDW产品属性

  • 类型

    描述

  • 型号

    2N7002KDW

  • 制造商

    SECOS

  • 制造商全称

    SeCoS Halbleitertechnologie GmbH

  • 功能描述

    Dual N-Channel Small Signal MOSFET

更新时间:2025-5-15 20:00:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
PANJIT/强茂
23+
SOT-363
100586
全新原厂原装正品现货,可提供技术支持、样品免费!
Micro Commercial Co
24+
6-TSSOP,SC-88,SOT-363
30000
晶体管-分立半导体产品-原装正品
PANJIT
1836+
SOT363
9852
只做原装正品现货!或订货假一赔十!
MCC
25+
SOT-363-6
18000
全新原装
MSKSEMI(美森科)
2024+
SOT-363
500000
诚信服务,绝对原装原盘
Slkor/萨科微
24+
SOT-363
50000
Slkor/萨科微一级代理,价格优势
PANJIT
SOT363
6800
一级代理 原装正品假一罚十价格优势长期供货
MCC
24+
SOT-363
10000
只做原装正品现货欢迎来电查询15919825718
进口原装
23+
进口原装
5000
全新原装热卖/假一罚十!更多数量可订货
CJ/长电
24+
SOT-363
9000
只做原装,欢迎询价,量大价优

2N7002KDW芯片相关品牌

  • ALLEN-BRADLEY
  • AVAGO
  • DAESAN
  • HONEYWELL-ACC
  • HUBERSUHNER
  • IXYS
  • LITEON
  • Micron
  • MMD
  • NJSEMI
  • Vicor
  • WALL

2N7002KDW数据表相关新闻