Description

• N-channel enhancement mode field effect transistor, designed for high speed pulsed amplifier and driver applications, which is manufactored by the N-Channel DMOS process.

Features

• High density cell design for low RDS(ON).

• Voltage controlled small signal switching.

• Rugged and reliable.

• High saturation current capability.

• High-speed switcing.

• CMOS logic compatible input.

• Not thermal runaway.

• No secondary breakdown.