60V N-Channel MOSFET

Description It utilizes the latest processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in power switching application and a wide va

N-Channel Enhancement Mode Power MOSFET

General Features VDS = 60V,ID = 0.34A RDS(ON)

N-Channel Enhancement Mode Power MOSFET

General Features VDS = 60V,ID = 0.34A RDS(ON)

Main Product Characteristics

文件：507.67 Kbytes Page：7 Pages

N-Channel 60-V (D-S) MOSFET

文件：1.00408 Mbytes Page：8 Pages

N-Channel Trench Power MOSFET

N-Channel Enhancement-Mode Vertical DMOS FETs

General Description The Supertex 2N7002 is an enhancement-mode (normally off) transistor that utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors, and the h

N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Description • N-channel enhancement mode field effect transistor, designed for high speed pulsed amplifier and driver applications, which is manufactored by the N-Channel DMOS process. Features • High density cell design for low RDS(ON). • Voltage controlled small signal switching. • Rugged a

N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET

FEATURES * 60 Volt VCEO

N-Channel Enhancement Mode Field Effect Transistor

Description These N-channel enhancement mode field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. These products have been designed to minimize on-state resistance while providing rugged, reliable, and fast switching performance. They can be used

N-Channel 60-V (D-S) MOSFET

FEATURES ● Low On-Resistance: 2.5 Ω ● Low Threshold: 2.1 V ● Low Input Capacitance: 22 pF ● Fast Switching Speed: 7 ns ● Low Input and Output Leakage BENEFITS ● Low Offset Voltage ● Low-Voltage Operation ● Easily Driven Without Buffer ● High-Speed Circuits ● Low Error Voltage APPLICATI

N-Channel Mosfet

FEATURES Rds(on) ≤ 3Ω @Vgs=10V Rds(on) ≤ 4Ω @Vgs=4.5V

N-Channel Enhancement Mode Power MOSFET

General Features VDS = 60V,ID = 0.34A RDS(ON)

60V N-Channel MOSFET

文件：675.68 Kbytes Page：6 Pages

MOSFET