60V N-Channel MOSFET

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SR MOSFET

N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Description • N-channel enhancement mode field effect transistor, designed for high speed pulsed amplifier and driver applications, which is manufactored by the N-Channel DMOS process. Features • High density cell design for low RDS(ON). • Voltage controlled small signal switching. • Rugged a

N-Channel Enhancement-Mode Vertical DMOS FETs

General Description The Supertex 2N7002 is an enhancement-mode (normally off) transistor that utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors, and the h

N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET

FEATURES * 60 Volt VCEO

N-Channel Enhancement Mode Field Effect Transistor

Description These N-channel enhancement mode field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. These products have been designed to minimize on-state resistance while providing rugged, reliable, and fast switching performance. They can be used

N-Channel 60-V (D-S) MOSFET

FEATURES ● Low On-Resistance: 2.5 Ω ● Low Threshold: 2.1 V ● Low Input Capacitance: 22 pF ● Fast Switching Speed: 7 ns ● Low Input and Output Leakage BENEFITS ● Low Offset Voltage ● Low-Voltage Operation ● Easily Driven Without Buffer ● High-Speed Circuits ● Low Error Voltage APPLICATI

N-Channel Enhancement MOSFET

Features  VDS=60V, ID=0.32A  RDS(ON)=1.6Ω@VGS=10V(Typ.)  RDS(ON)=2.0Ω@VGS=4.5V(Typ.)  High Power and current handing capability  Lead free product is acquired  Surface Mount Package Main Applications  Battery Protection  Load Switch  Power Management

Double N-CHANNEL MOSFET in a SOT-363 Plastic Package.

Features Sensitive gate trigger current and Low Holding current.ESD protected diode. ESD rating:2200V HBM Halogen-free

Dual N-Channel MOSFET

Features: * Low On-Resistance : 7.5 Ω * Low Input Capacitance: 22PF * Low Out put Capacitance : 11PF * Low Threshole :1 .5V(TYE) * Fast Switching Speed : 11ns Mechanical Data: * Case: SOT-363, Molded Plastic * Case Material-UL Flammability Rating 94V-0 * Terminals: Solderable per MIL-STD-

N-Channel MOSFET

Features • Halogen free available upon request by adding suffix -HF • Epoxy meets UL 94 V-0 flammability rating • Moisture Sensitivity Level 1 • High density cell design for low RDS(ON) • Rugged and reliable • Voltage controlled small signal switch • Operating Junction Temperature: -55 to +

Dual N-channel MOSFET

Dual N-channel MOSFET FEATURE ● High density cell design for low RDS(ON) ● Voltage controlled small signal switch ● Rugged and reliable ● High saturation current capability APPLICATION ● Load Switch for Portable Devices ● DC/DC Converter

Dual N-Channel MOSFET

■ Features ● VDS (V) = 60V ● ID = 115 mA (VGS = 10V) ● RDS(ON)

N-Channel Enhancement Mode Field Effect Transistor

Features • Dual N-Channel MOSFET • Low On-Resistance • Low Gate Threshold Voltage • Low Input Capacitance • Fast Switching Speed • Low Input/Output Leakage • Ultra-Small Surface Mount Package • Lead Free/RoHS Compliant

Field Effect Transistor - N-Channel, Enhancement Mode

Features • Dual N−Channel MOSFET • Low On−Resistance • Low Gate Threshold Voltage • Low Input Capacitance • Fast Switching Speed • Low Input/Output Leakage • Ultra−Small Surface Mount Package • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant

OptiMOS??Small-Signal-Transistor

Features • Dual N-channel • Enhancement mode • Logic level • Avalanche rated • Fast switching • Qualified according to AEC Q101 • 100 lead-free; RoHS compliant • Halogen-free according to IEC61249-2-21

300m Amps, 60 Volts DUAL N-CHANNEL POWER MOSFET

DESCRIPTION The UTC 2N7002DW uses advanced technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications. FEATURES * High Density Cell Design for Low RDS(ON) * Voltage Controlled Small Sign

DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Description This MOSFET has been designed to minimize the on-state resistance (Rds(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. Features • Dual N-Channel MOSFET • Low On-Resistance • Low Gate Threshold Voltage • Lo

SOT-363 Plastic-Encapsulate MOSFETs

Dual N-channel MOSFET FEATURE ● High density cell design for low RDS(ON) ● Voltage controlled small signal switch ● Rugged and reliable ● High saturation current capability APPLICATION ● Load Switch for Portable Devices ● DC/DC Converter

Plastic-Encapsulate MOSFETs

Dual N-channel MOSFET FEATURE ● High density cell design for low RDS(ON) ● Voltage controlled small signal switch ● Rugged and reliable ● High saturation current capability APPLICATION ● Load Switch for Portable Devices ● DC/DC Converter

Small Signal MOSFET

Small Signal MOSFET 115 mAmps, 60 Volts N–Channel SOT–363

60V N-Channel Enhancement Mode MOSFET

DUAL N-CHANNEL ENHANCEMENT MODE MOSFETS This space-efficient device contains two electrically-isolated N-Channel enhancement-mode MOSFETs. It comes in a very small SOT-363 (SC70-6L) package. This device is ideal for portable applications where board space is at a premium. FEATURES ● Low On-Re

Plastic-Encapsulated Transistors

MOSFET (N-Channel) FEATURES Power dissipation PD : 0.2 W (Tamb=25℃) Collector current ID: 115 mA Collector-base voltage VDS: 60 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃

N-Channel MOSFET

Features High density cell design for Low RDS（on） Voltage controlled small signal switch Rugged and reliable High saturation current capability ESD protected Load Switch for Portable Devices DC/DC Converter Applications

115 mAmps,60 Volts

N–Channel SOT-363 • We declare that the material of product are Halogen Free and compliance with RoHS requirements. • ESD Protected:1000V • Pb-Free package is available RoHS product for packing code suffix G Halogen free product for packing code suffix H

DUAL N-CHANNEL ENHANCEMENT MODE MOSFET

Features • Dual N-Channel MOSFET • Low On-Resistance • Low Gate Threshold Voltage • Low Input Capacitance • Fast Switching Speed • Low Input/Output Leakage • Ultra-Small Surface Mount Package • Available in Lead Free/RoHS Compliant Version (Note 2)

DUAL N-CHANNEL ENHANCEMENT MODE MOSFET

Description This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)), yet maintain superior switching performance, making it ideal for high-efficiency power management applications. Features • Dual N-Channel MOSFET • Low On-Resistance • Low Gate Threshold Voltage

DUAL N-CHANNEL ENHANCEMENT MODE MOSFET

Description This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)), yet maintain superior switching performance, making it ideal for high-efficiency power management applications. Features • Dual N-Channel MOSFET • Low On-Resistance • Low Gate Threshold Voltage

DUAL N-CHANNEL ENHANCEMENT MODE MOSFET

Description This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)), yet maintain superior switching performance, making it ideal for high-efficiency power management applications. Features • Dual N-Channel MOSFET • Low On-Resistance • Low Gate Threshold Voltage

DUAL N-CHANNEL ENHANCEMENT MODE MOSFET

Description This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)), yet maintain superior switching performance, making it ideal for high-efficiency power management applications. Features • Dual N-Channel MOSFET • Low On-Resistance • Low Gate Threshold Voltage

DUAL N-CHANNEL ENHANCEMENT MODE MOSFET

Description This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)), yet maintain superior switching performance, making it ideal for high-efficiency power management applications. Features • Dual N-Channel MOSFET • Low On-Resistance • Low Gate Threshold Voltage

300m Amps, 60 Volts DUAL N-CHANNEL POWER MOSFET

DESCRIPTION The UTC 2N7002DW uses advanced technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications. FEATURES * High Density Cell Design for Low RDS(ON) * Voltage Controlled Small Sign

OptiMOS??Small-Signal-Transistor

Features • Dual N-channel • Enhancement mode • Logic level • Avalanche rated • Fast switching • Qualified according to AEC Q101 • 100 lead-free; RoHS compliant • Halogen-free according to IEC61249-2-21

MOSFET

Features - Voltage controlled small signal switch. - Low input capacitance. - Fast switching speed. - Low input / output leakage.

DUAL N-CHANNEL ENHANCEMENT MODE MOSFET

Features Dual N-Channel MOSFET Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage ESD Protected Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) For automotive applicati

DUAL N-CHANNEL ENHANCEMENT MODE MOSFET

Features Dual N-Channel MOSFET Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage ESD Protected Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) For automotive applicati

DUAL N-CHANNEL ENHANCEMENT MODE MOSFET

Features Dual N-Channel MOSFET Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage ESD Protected Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) For automotive applicati

DUAL N-CHANNEL ENHANCEMENT MODE MOSFET

Features  Dual N-Channel MOSFET  Low On-Resistance  Low Gate Threshold Voltage  Low Input Capacitance  Fast Switching Speed  Small Surface Mount Package  ESD Protected up to 2kV  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free. “Green” Device (No

DUAL N-CHANNEL ENHANCEMENT MODE MOSFET

Features  Dual N-Channel MOSFET  Low On-Resistance  Low Gate Threshold Voltage  Low Input Capacitance  Fast Switching Speed  Small Surface Mount Package  ESD Protected up to 2kV  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free. “Green” Device (No

DUAL N-CHANNEL ENHANCEMENT MODE MOSFET

Features  Dual N-Channel MOSFET  Low On-Resistance  Low Gate Threshold Voltage  Low Input Capacitance  Fast Switching Speed  Small Surface Mount Package  ESD Protected up to 2kV  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free. “Green” Device (No

Dual N-Channel MOSFET

Features • High Density Cell Design For Low RDS(ON) • Voltage Controlled Small Signal Switch • Epoxy Meets UL 94 V-0 Flammability Rating • Moisture Sensitivity Level 1 • Halogen Free Available Upon Request By Adding Suffix -HF • Lead Free Finish/RoHS Compliant (P Suffix Designates RoHS C

300m Amps, 60 Volts DUAL N-CHANNEL POWER MOSFET

DESCRIPTION The UTC 2N7002DW uses advanced technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications. FEATURES * High Density Cell Design for Low RDS(ON) * Voltage Controlled Small Sign

DUAL N-CHANNEL ENHANCEMENT MODE MOSFET

Features Dual N-Channel MOSFET Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Ultra-Small Surface Mount Package Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) The

DUAL N-CHANNEL ENHANCEMENT MODE MOSFET

Features Dual N-Channel MOSFET Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Ultra-Small Surface Mount Package Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) The

DUAL N-CHANNEL ENHANCEMENT MODE MOSFET

Features Dual N-Channel MOSFET Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Ultra-Small Surface Mount Package Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) The

DUAL N-CHANNEL ENHANCEMENT MODE MOSFET

Features Low On-Resistance Low Input Capacitance Fast Switching Speed Low Input/Output Leakage ESD Protected Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) For automotive applications requiring specific change control Applicatio

DUAL N-CHANNEL ENHANCEMENT MODE MOSFET

Features Low On-Resistance Low Input Capacitance Fast Switching Speed Low Input/Output Leakage ESD Protected Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) For automotive applications requiring specific change control Applicatio

N-Channel MOSFET

Features • Halogen free available upon request by adding suffix -HF • Epoxy meets UL 94 V-0 flammability rating • Moisture Sensitivity Level 1 • High density cell design for low RDS(ON) • Rugged and reliable • Voltage controlled small signal switch • Operating Junction Temperature: -55 to +

DUAL N-CHANNEL ENHANCEMENT MODE MOS TRANSISTOR

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MOSFET

Dual N Channel MOSFET

Dual N-Channel Enhancement MOS FET

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N-Channel MOSFET

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We declare that the material of product compliance with RoHS requirements and Halogen Free.

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Dual N-channel

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300mA, 60V DUAL N-CHANNEL POWER MOSFET

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DUAL N-CHANNEL ENHANCEMENT MODE MOSFET

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DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

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DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

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60V N-Channel Enhancement Mode MOSFET

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