2N7002DW价格
参考价格:¥0.1950
型号:2N7002DW 品牌:FAIRCHILD 备注:这里有2N7002DW多少钱,2026年最近7天走势,今日出价,今日竞价,2N7002DW批发/采购报价,2N7002DW行情走势销售排行榜,2N7002DW报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
2N7002DW | 丝印代码:K72;DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Description This MOSFET has been designed to minimize the on-state resistance (Rds(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. Features • Dual N-Channel MOSFET • Low On-Resistance • Low Gate Threshold Voltage • Lo | DIODES 美台半导体 | ||
2N7002DW | Dual N-Channel MOSFET Features: * Low On-Resistance : 7.5 Ω * Low Input Capacitance: 22PF * Low Out put Capacitance : 11PF * Low Threshole :1 .5V(TYE) * Fast Switching Speed : 11ns Mechanical Data: * Case: SOT-363, Molded Plastic * Case Material-UL Flammability Rating 94V-0 * Terminals: Solderable per MIL-STD- | WEITRON | ||
2N7002DW | Plastic-Encapsulated Transistors MOSFET (N-Channel) FEATURES Power dissipation PD : 0.2 W (Tamb=25℃) Collector current ID: 115 mA Collector-base voltage VDS: 60 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃ | TEL | ||
2N7002DW | 丝印代码:702;60V N-Channel Enhancement Mode MOSFET DUAL N-CHANNEL ENHANCEMENT MODE MOSFETS This space-efficient device contains two electrically-isolated N-Channel enhancement-mode MOSFETs. It comes in a very small SOT-363 (SC70-6L) package. This device is ideal for portable applications where board space is at a premium. FEATURES ● Low On-Re | PANJIT 強茂 | ||
2N7002DW | Dual N-Channel MOSFET ■ Features ● VDS (V) = 60V ● ID = 115 mA (VGS = 10V) ● RDS(ON) | KEXIN 科信电子 | ||
2N7002DW | 丝印代码:2N;N-Channel Enhancement Mode Field Effect Transistor Features • Dual N-Channel MOSFET • Low On-Resistance • Low Gate Threshold Voltage • Low Input Capacitance • Fast Switching Speed • Low Input/Output Leakage • Ultra-Small Surface Mount Package • Lead Free/RoHS Compliant | FAIRCHILD 仙童半导体 | ||
2N7002DW | OptiMOS??Small-Signal-Transistor Features • Dual N-channel • Enhancement mode • Logic level • Avalanche rated • Fast switching • Qualified according to AEC Q101 • 100 lead-free; RoHS compliant • Halogen-free according to IEC61249-2-21 | INFINEON 英飞凌 | ||
2N7002DW | Small Signal MOSFET Small Signal MOSFET 115 mAmps, 60 Volts N–Channel SOT–363 | SECOS 喜可士 | ||
2N7002DW | 300m Amps, 60 Volts DUAL N-CHANNEL POWER MOSFET DESCRIPTION The UTC 2N7002DW uses advanced technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications. FEATURES * High Density Cell Design for Low RDS(ON) * Voltage Controlled Small Sign | UTC 友顺 | ||
2N7002DW | N-Channel MOSFET Features • Halogen free available upon request by adding suffix -HF • Epoxy meets UL 94 V-0 flammability rating • Moisture Sensitivity Level 1 • High density cell design for low RDS(ON) • Rugged and reliable • Voltage controlled small signal switch • Operating Junction Temperature: -55 to + | MCC | ||
2N7002DW | SOT-363 Plastic-Encapsulate MOSFETs Dual N-channel MOSFET FEATURE ● High density cell design for low RDS(ON) ● Voltage controlled small signal switch ● Rugged and reliable ● High saturation current capability APPLICATION ● Load Switch for Portable Devices ● DC/DC Converter | LUGUANG 鲁光电子 | ||
2N7002DW | Dual N-channel MOSFET Dual N-channel MOSFET FEATURE ● High density cell design for low RDS(ON) ● Voltage controlled small signal switch ● Rugged and reliable ● High saturation current capability APPLICATION ● Load Switch for Portable Devices ● DC/DC Converter | JIANGSU 长电科技 | ||
2N7002DW | 丝印代码:K72;Plastic-Encapsulate MOSFETs Dual N-channel MOSFET FEATURE ● High density cell design for low RDS(ON) ● Voltage controlled small signal switch ● Rugged and reliable ● High saturation current capability APPLICATION ● Load Switch for Portable Devices ● DC/DC Converter | SKTECHNOLGYSHIKE Electronics 时科广东时科微实业有限公司 | ||
2N7002DW | 丝印代码:2N;Field Effect Transistor - N-Channel, Enhancement Mode Features • Dual N−Channel MOSFET • Low On−Resistance • Low Gate Threshold Voltage • Low Input Capacitance • Fast Switching Speed • Low Input/Output Leakage • Ultra−Small Surface Mount Package • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant | ONSEMI 安森美半导体 | ||
2N7002DW | N-Channel MOSFET Features High density cell design for Low RDS(on) Voltage controlled small signal switch Rugged and reliable High saturation current capability ESD protected Load Switch for Portable Devices DC/DC Converter Applications | EVVOSEMI 翊欧 | ||
2N7002DW | N 沟道增强型场效应晶体管 60V,0.115A,2Ω •双N沟道数字MOSFET\n•低导通电阻\n•低栅极阈值电压\n•低输入电容\n•快速开关速度\n•低输入/输出泄漏\n•超小型表面贴装封装; | ONSEMI 安森美半导体 | ||
2N7002DW | DUAL N-CHANNEL ENHANCEMENT MODE MOSFET | DIODES 美台半导体 | ||
2N7002DW | N沟道 MOSFET | NCEPOWER 新洁能 | ||
2N7002DW | Dual N-channel 文件:448.94 Kbytes Page:9 Pages | INFINEON 英飞凌 | ||
2N7002DW | DUAL N-CHANNEL ENHANCEMENT MODE MOSFET 文件:402.74 Kbytes Page:5 Pages | DIODES 美台半导体 | ||
2N7002DW | 丝印代码:702;We declare that the material of product compliance with RoHS requirements and Halogen Free. 文件:622.91 Kbytes Page:6 Pages | LEIDITECH 雷卯电子 | ||
2N7002DW | 300mA, 60V DUAL N-CHANNEL POWER MOSFET 文件:291.27 Kbytes Page:6 Pages | UTC 友顺 | ||
2N7002DW | N-Channel MOSFET 文件:190.89 Kbytes Page:2 Pages | MCC | ||
2N7002DW | 丝印代码:K72;DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR 文件:89.71 Kbytes Page:4 Pages | DIODES 美台半导体 | ||
2N7002DW | 丝印代码:702;60V N-Channel Enhancement Mode MOSFET 文件:164.84 Kbytes Page:5 Pages | PANJIT 強茂 | ||
2N7002DW | 丝印代码:K72;DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR 文件:164.69 Kbytes Page:3 Pages | DIODES 美台半导体 | ||
115 mAmps,60 Volts N–Channel SOT-363 • We declare that the material of product are Halogen Free and compliance with RoHS requirements. • ESD Protected:1000V • Pb-Free package is available RoHS product for packing code suffix G Halogen free product for packing code suffix H | WILLAS 威伦电子 | |||
DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Features • Dual N-Channel MOSFET • Low On-Resistance • Low Gate Threshold Voltage • Low Input Capacitance • Fast Switching Speed • Low Input/Output Leakage • Ultra-Small Surface Mount Package • Available in Lead Free/RoHS Compliant Version (Note 2) | DIODES 美台半导体 | |||
DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Description This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)), yet maintain superior switching performance, making it ideal for high-efficiency power management applications. Features • Dual N-Channel MOSFET • Low On-Resistance • Low Gate Threshold Voltage | DIODES 美台半导体 | |||
DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Description This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)), yet maintain superior switching performance, making it ideal for high-efficiency power management applications. Features • Dual N-Channel MOSFET • Low On-Resistance • Low Gate Threshold Voltage | DIODES 美台半导体 | |||
DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Description This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)), yet maintain superior switching performance, making it ideal for high-efficiency power management applications. Features • Dual N-Channel MOSFET • Low On-Resistance • Low Gate Threshold Voltage | DIODES 美台半导体 | |||
DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Description This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)), yet maintain superior switching performance, making it ideal for high-efficiency power management applications. Features • Dual N-Channel MOSFET • Low On-Resistance • Low Gate Threshold Voltage | DIODES 美台半导体 | |||
DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Description This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)), yet maintain superior switching performance, making it ideal for high-efficiency power management applications. Features • Dual N-Channel MOSFET • Low On-Resistance • Low Gate Threshold Voltage | DIODES 美台半导体 | |||
300m Amps, 60 Volts DUAL N-CHANNEL POWER MOSFET DESCRIPTION The UTC 2N7002DW uses advanced technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications. FEATURES * High Density Cell Design for Low RDS(ON) * Voltage Controlled Small Sign | UTC 友顺 | |||
OptiMOS??Small-Signal-Transistor Features • Dual N-channel • Enhancement mode • Logic level • Avalanche rated • Fast switching • Qualified according to AEC Q101 • 100 lead-free; RoHS compliant • Halogen-free according to IEC61249-2-21 | INFINEON 英飞凌 | |||
MOSFET Features - Voltage controlled small signal switch. - Low input capacitance. - Fast switching speed. - Low input / output leakage. | COMCHIP 典琦 | |||
DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Features Dual N-Channel MOSFET Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage ESD Protected Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) For automotive applicati | DIODES 美台半导体 | |||
丝印代码:DWK;DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Features Dual N-Channel MOSFET Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage ESD Protected Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) For automotive applicati | DIODES 美台半导体 | |||
丝印代码:DWK;DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Features Dual N-Channel MOSFET Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage ESD Protected Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) For automotive applicati | DIODES 美台半导体 | |||
DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Features Dual N-Channel MOSFET Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Small Surface Mount Package ESD Protected up to 2kV Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (No | DIODES 美台半导体 | |||
丝印代码:MMX;DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Features Dual N-Channel MOSFET Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Small Surface Mount Package ESD Protected up to 2kV Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (No | DIODES 美台半导体 | |||
丝印代码:MMX;DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Features Dual N-Channel MOSFET Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Small Surface Mount Package ESD Protected up to 2kV Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (No | DIODES 美台半导体 | |||
Dual N-Channel MOSFET Features • High Density Cell Design For Low RDS(ON) • Voltage Controlled Small Signal Switch • Epoxy Meets UL 94 V-0 Flammability Rating • Moisture Sensitivity Level 1 • Halogen Free Available Upon Request By Adding Suffix -HF • Lead Free Finish/RoHS Compliant (P Suffix Designates RoHS C | MCC | |||
300m Amps, 60 Volts DUAL N-CHANNEL POWER MOSFET DESCRIPTION The UTC 2N7002DW uses advanced technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications. FEATURES * High Density Cell Design for Low RDS(ON) * Voltage Controlled Small Sign | UTC 友顺 | |||
DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Features Dual N-Channel MOSFET Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Ultra-Small Surface Mount Package Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) The | DIODES 美台半导体 | |||
丝印代码:K72;DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Features Dual N-Channel MOSFET Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Ultra-Small Surface Mount Package Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) The | DIODES 美台半导体 | |||
丝印代码:K72;DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Features Dual N-Channel MOSFET Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Ultra-Small Surface Mount Package Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) The | DIODES 美台半导体 | |||
DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Features Low On-Resistance Low Input Capacitance Fast Switching Speed Low Input/Output Leakage ESD Protected Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) For automotive applications requiring specific change control Applicatio | DIODES 美台半导体 | |||
丝印代码:MM1;DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Features Low On-Resistance Low Input Capacitance Fast Switching Speed Low Input/Output Leakage ESD Protected Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) For automotive applications requiring specific change control Applicatio | DIODES 美台半导体 | |||
N-Channel MOSFET Features • Halogen free available upon request by adding suffix -HF • Epoxy meets UL 94 V-0 flammability rating • Moisture Sensitivity Level 1 • High density cell design for low RDS(ON) • Rugged and reliable • Voltage controlled small signal switch • Operating Junction Temperature: -55 to + | MCC | |||
DUAL N-CHANNEL ENHANCEMENT MODE MOSFETS 文件:112.24 Kbytes Page:4 Pages | PANJIT 強茂 | |||
60V N-Channel Enhancement Mode MOSFET 文件:176.96 Kbytes Page:5 Pages | PANJIT 強茂 | |||
DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR 文件:164.69 Kbytes Page:3 Pages | DIODES 美台半导体 | |||
60V N-Channel Enhancement Mode MOSFET 文件:164.84 Kbytes Page:5 Pages | PANJIT 強茂 | |||
DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR 文件:89.71 Kbytes Page:4 Pages | DIODES 美台半导体 | |||
N-Channel MOSFET 文件:190.89 Kbytes Page:2 Pages | MCC | |||
300mA, 60V DUAL N-CHANNEL POWER MOSFET 文件:291.27 Kbytes Page:6 Pages | UTC 友顺 | |||
60V N-Channel Enhancement Mode MOSFET 文件:155.8 Kbytes Page:5 Pages | PANJIT 強茂 | |||
Dual N-channel 文件:448.94 Kbytes Page:9 Pages | INFINEON 英飞凌 | |||
DUAL N-CHANNEL ENHANCEMENT MODE MOSFET 文件:217.13 Kbytes Page:5 Pages | DIODES 美台半导体 |
2N7002DW产品属性
- 类型
描述
- Automotive Compliant PPAP:
On Request*
- Polarity:
N+N
- ESD Diodes:
No
- VDS:
60 V
- VGS:
20 ±V
- IDS @ TA = +25°C:
0.115 A
- PD @ TA = +25°C:
0.3 W
- RDS(ON) Max @ VGS (10V):
N/A mΩ
- RDS(ON) Max @ VGS (4.5V):
7500 mΩ
- RDS(ON) Max @ VGS (2.5V):
N/A mΩ
- RDS(ON) Max @ VGS (1.8V):
N/A mΩ
- VGS (th) Max:
2 V
- QG Typ @ VGS = 4.5V (nC):
N/A nC
- QG Typ @ VGS = 10V (nC):
N/A nC
- Packages:
SOT363
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ON(安森美) |
24+ |
标准封装 |
7368 |
全新原装正品/价格优惠/质量保障 |
|||
INFINEON/英飞凌 |
23+ |
SOT-363 |
100586 |
全新原厂原装正品现货,可提供技术支持、样品免费! |
|||
FAIRCHILD/仙童 |
25+ |
SOT-363 |
38962 |
FAIRCHILD/仙童全新特价2N7002DW即刻询购立享优惠#长期有货 |
|||
INFINEON |
2年内 |
SOT363 |
16000 |
英博尔原装优质现货订货渠道商 |
|||
DIODES/美台 |
21+ |
SOT-363 |
120000 |
||||
INFINEON |
24+ |
N/A |
10000 |
只做原装,实单最低价支持 |
|||
DIODES/美台 |
24+ |
NA |
20000 |
原装正品支持实单 |
|||
DIODES |
13+ |
SOT-363 |
5650 |
只做原装正品 |
|||
Infineon(英飞凌) |
23+ |
25650 |
新到现货,只做原装进口 |
||||
INFINEON TECHNOLOGIES AG |
25+ |
SMD |
918000 |
明嘉莱只做原装正品现货 |
2N7002DW芯片相关品牌
2N7002DW规格书下载地址
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2N7002DW数据表相关新闻
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2021-5-19
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