位置:首页 > IC中文资料 > 2N7002DW

2N7002DW价格

参考价格:¥0.1950

型号:2N7002DW 品牌:FAIRCHILD 备注:这里有2N7002DW多少钱,2026年最近7天走势,今日出价,今日竞价,2N7002DW批发/采购报价,2N7002DW行情走势销售排行榜,2N7002DW报价。
型号 功能描述 生产厂家 企业 LOGO 操作
2N7002DW

丝印代码:K72;DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Description This MOSFET has been designed to minimize the on-state resistance (Rds(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. Features • Dual N-Channel MOSFET • Low On-Resistance • Low Gate Threshold Voltage • Lo

DIODES

美台半导体

2N7002DW

Dual N-Channel MOSFET

Features: * Low On-Resistance : 7.5 Ω * Low Input Capacitance: 22PF * Low Out put Capacitance : 11PF * Low Threshole :1 .5V(TYE) * Fast Switching Speed : 11ns Mechanical Data: * Case: SOT-363, Molded Plastic * Case Material-UL Flammability Rating 94V-0 * Terminals: Solderable per MIL-STD-

WEITRON

2N7002DW

Plastic-Encapsulated Transistors

MOSFET (N-Channel) FEATURES Power dissipation PD : 0.2 W (Tamb=25℃) Collector current ID: 115 mA Collector-base voltage VDS: 60 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃

TEL

2N7002DW

丝印代码:702;60V N-Channel Enhancement Mode MOSFET

DUAL N-CHANNEL ENHANCEMENT MODE MOSFETS This space-efficient device contains two electrically-isolated N-Channel enhancement-mode MOSFETs. It comes in a very small SOT-363 (SC70-6L) package. This device is ideal for portable applications where board space is at a premium. FEATURES ● Low On-Re

PANJIT

強茂

2N7002DW

Dual N-Channel MOSFET

■ Features ● VDS (V) = 60V ● ID = 115 mA (VGS = 10V) ● RDS(ON)

KEXIN

科信电子

2N7002DW

丝印代码:2N;N-Channel Enhancement Mode Field Effect Transistor

Features • Dual N-Channel MOSFET • Low On-Resistance • Low Gate Threshold Voltage • Low Input Capacitance • Fast Switching Speed • Low Input/Output Leakage • Ultra-Small Surface Mount Package • Lead Free/RoHS Compliant

FAIRCHILD

仙童半导体

2N7002DW

OptiMOS??Small-Signal-Transistor

Features • Dual N-channel • Enhancement mode • Logic level • Avalanche rated • Fast switching • Qualified according to AEC Q101 • 100 lead-free; RoHS compliant • Halogen-free according to IEC61249-2-21

INFINEON

英飞凌

2N7002DW

Small Signal MOSFET

Small Signal MOSFET 115 mAmps, 60 Volts N–Channel SOT–363

SECOS

喜可士

2N7002DW

300m Amps, 60 Volts DUAL N-CHANNEL POWER MOSFET

DESCRIPTION The UTC 2N7002DW uses advanced technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications. FEATURES * High Density Cell Design for Low RDS(ON) * Voltage Controlled Small Sign

UTC

友顺

2N7002DW

N-Channel MOSFET

Features • Halogen free available upon request by adding suffix -HF • Epoxy meets UL 94 V-0 flammability rating • Moisture Sensitivity Level 1 • High density cell design for low RDS(ON) • Rugged and reliable • Voltage controlled small signal switch • Operating Junction Temperature: -55 to +

MCC

2N7002DW

SOT-363 Plastic-Encapsulate MOSFETs

Dual N-channel MOSFET FEATURE ● High density cell design for low RDS(ON) ● Voltage controlled small signal switch ● Rugged and reliable ● High saturation current capability APPLICATION ● Load Switch for Portable Devices ● DC/DC Converter

LUGUANG

鲁光电子

2N7002DW

Dual N-channel MOSFET

Dual N-channel MOSFET FEATURE ● High density cell design for low RDS(ON) ● Voltage controlled small signal switch ● Rugged and reliable ● High saturation current capability APPLICATION ● Load Switch for Portable Devices ● DC/DC Converter

JIANGSU

长电科技

2N7002DW

丝印代码:K72;Plastic-Encapsulate MOSFETs

Dual N-channel MOSFET FEATURE ● High density cell design for low RDS(ON) ● Voltage controlled small signal switch ● Rugged and reliable ● High saturation current capability APPLICATION ● Load Switch for Portable Devices ● DC/DC Converter

SKTECHNOLGYSHIKE Electronics

时科广东时科微实业有限公司

2N7002DW

丝印代码:2N;Field Effect Transistor - N-Channel, Enhancement Mode

Features • Dual N−Channel MOSFET • Low On−Resistance • Low Gate Threshold Voltage • Low Input Capacitance • Fast Switching Speed • Low Input/Output Leakage • Ultra−Small Surface Mount Package • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant

ONSEMI

安森美半导体

2N7002DW

N-Channel MOSFET

Features High density cell design for Low RDS(on) Voltage controlled small signal switch Rugged and reliable High saturation current capability ESD protected Load Switch for Portable Devices DC/DC Converter Applications

EVVOSEMI

翊欧

2N7002DW

N 沟道增强型场效应晶体管 60V,0.115A,2Ω

•双N沟道数字MOSFET\n•低导通电阻\n•低栅极阈值电压\n•低输入电容\n•快速开关速度\n•低输入/输出泄漏\n•超小型表面贴装封装;

ONSEMI

安森美半导体

2N7002DW

DUAL N-CHANNEL ENHANCEMENT MODE MOSFET

DIODES

美台半导体

2N7002DW

N沟道 MOSFET

NCEPOWER

新洁能

2N7002DW

Dual N-channel

文件:448.94 Kbytes Page:9 Pages

INFINEON

英飞凌

2N7002DW

DUAL N-CHANNEL ENHANCEMENT MODE MOSFET

文件:402.74 Kbytes Page:5 Pages

DIODES

美台半导体

2N7002DW

丝印代码:702;We declare that the material of product compliance with RoHS requirements and Halogen Free.

文件:622.91 Kbytes Page:6 Pages

LEIDITECH

雷卯电子

2N7002DW

300mA, 60V DUAL N-CHANNEL POWER MOSFET

文件:291.27 Kbytes Page:6 Pages

UTC

友顺

2N7002DW

N-Channel MOSFET

文件:190.89 Kbytes Page:2 Pages

MCC

2N7002DW

丝印代码:K72;DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

文件:89.71 Kbytes Page:4 Pages

DIODES

美台半导体

2N7002DW

丝印代码:702;60V N-Channel Enhancement Mode MOSFET

文件:164.84 Kbytes Page:5 Pages

PANJIT

強茂

2N7002DW

丝印代码:K72;DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

文件:164.69 Kbytes Page:3 Pages

DIODES

美台半导体

115 mAmps,60 Volts

N–Channel SOT-363 • We declare that the material of product are Halogen Free and compliance with RoHS requirements. • ESD Protected:1000V • Pb-Free package is available RoHS product for packing code suffix G Halogen free product for packing code suffix H

WILLAS

威伦电子

DUAL N-CHANNEL ENHANCEMENT MODE MOSFET

Features • Dual N-Channel MOSFET • Low On-Resistance • Low Gate Threshold Voltage • Low Input Capacitance • Fast Switching Speed • Low Input/Output Leakage • Ultra-Small Surface Mount Package • Available in Lead Free/RoHS Compliant Version (Note 2)

DIODES

美台半导体

DUAL N-CHANNEL ENHANCEMENT MODE MOSFET

Description This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)), yet maintain superior switching performance, making it ideal for high-efficiency power management applications. Features • Dual N-Channel MOSFET • Low On-Resistance • Low Gate Threshold Voltage

DIODES

美台半导体

DUAL N-CHANNEL ENHANCEMENT MODE MOSFET

Description This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)), yet maintain superior switching performance, making it ideal for high-efficiency power management applications. Features • Dual N-Channel MOSFET • Low On-Resistance • Low Gate Threshold Voltage

DIODES

美台半导体

DUAL N-CHANNEL ENHANCEMENT MODE MOSFET

Description This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)), yet maintain superior switching performance, making it ideal for high-efficiency power management applications. Features • Dual N-Channel MOSFET • Low On-Resistance • Low Gate Threshold Voltage

DIODES

美台半导体

DUAL N-CHANNEL ENHANCEMENT MODE MOSFET

Description This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)), yet maintain superior switching performance, making it ideal for high-efficiency power management applications. Features • Dual N-Channel MOSFET • Low On-Resistance • Low Gate Threshold Voltage

DIODES

美台半导体

DUAL N-CHANNEL ENHANCEMENT MODE MOSFET

Description This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)), yet maintain superior switching performance, making it ideal for high-efficiency power management applications. Features • Dual N-Channel MOSFET • Low On-Resistance • Low Gate Threshold Voltage

DIODES

美台半导体

300m Amps, 60 Volts DUAL N-CHANNEL POWER MOSFET

DESCRIPTION The UTC 2N7002DW uses advanced technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications. FEATURES * High Density Cell Design for Low RDS(ON) * Voltage Controlled Small Sign

UTC

友顺

OptiMOS??Small-Signal-Transistor

Features • Dual N-channel • Enhancement mode • Logic level • Avalanche rated • Fast switching • Qualified according to AEC Q101 • 100 lead-free; RoHS compliant • Halogen-free according to IEC61249-2-21

INFINEON

英飞凌

MOSFET

Features - Voltage controlled small signal switch. - Low input capacitance. - Fast switching speed. - Low input / output leakage.

COMCHIP

典琦

DUAL N-CHANNEL ENHANCEMENT MODE MOSFET

Features Dual N-Channel MOSFET Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage ESD Protected Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) For automotive applicati

DIODES

美台半导体

丝印代码:DWK;DUAL N-CHANNEL ENHANCEMENT MODE MOSFET

Features Dual N-Channel MOSFET Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage ESD Protected Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) For automotive applicati

DIODES

美台半导体

丝印代码:DWK;DUAL N-CHANNEL ENHANCEMENT MODE MOSFET

Features Dual N-Channel MOSFET Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage ESD Protected Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) For automotive applicati

DIODES

美台半导体

DUAL N-CHANNEL ENHANCEMENT MODE MOSFET

Features  Dual N-Channel MOSFET  Low On-Resistance  Low Gate Threshold Voltage  Low Input Capacitance  Fast Switching Speed  Small Surface Mount Package  ESD Protected up to 2kV  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free. “Green” Device (No

DIODES

美台半导体

丝印代码:MMX;DUAL N-CHANNEL ENHANCEMENT MODE MOSFET

Features  Dual N-Channel MOSFET  Low On-Resistance  Low Gate Threshold Voltage  Low Input Capacitance  Fast Switching Speed  Small Surface Mount Package  ESD Protected up to 2kV  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free. “Green” Device (No

DIODES

美台半导体

丝印代码:MMX;DUAL N-CHANNEL ENHANCEMENT MODE MOSFET

Features  Dual N-Channel MOSFET  Low On-Resistance  Low Gate Threshold Voltage  Low Input Capacitance  Fast Switching Speed  Small Surface Mount Package  ESD Protected up to 2kV  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free. “Green” Device (No

DIODES

美台半导体

Dual N-Channel MOSFET

Features • High Density Cell Design For Low RDS(ON) • Voltage Controlled Small Signal Switch • Epoxy Meets UL 94 V-0 Flammability Rating • Moisture Sensitivity Level 1 • Halogen Free Available Upon Request By Adding Suffix -HF • Lead Free Finish/RoHS Compliant (P Suffix Designates RoHS C

MCC

300m Amps, 60 Volts DUAL N-CHANNEL POWER MOSFET

DESCRIPTION The UTC 2N7002DW uses advanced technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications. FEATURES * High Density Cell Design for Low RDS(ON) * Voltage Controlled Small Sign

UTC

友顺

DUAL N-CHANNEL ENHANCEMENT MODE MOSFET

Features Dual N-Channel MOSFET Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Ultra-Small Surface Mount Package Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) The

DIODES

美台半导体

丝印代码:K72;DUAL N-CHANNEL ENHANCEMENT MODE MOSFET

Features Dual N-Channel MOSFET Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Ultra-Small Surface Mount Package Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) The

DIODES

美台半导体

丝印代码:K72;DUAL N-CHANNEL ENHANCEMENT MODE MOSFET

Features Dual N-Channel MOSFET Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Ultra-Small Surface Mount Package Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) The

DIODES

美台半导体

DUAL N-CHANNEL ENHANCEMENT MODE MOSFET

Features Low On-Resistance Low Input Capacitance Fast Switching Speed Low Input/Output Leakage ESD Protected Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) For automotive applications requiring specific change control Applicatio

DIODES

美台半导体

丝印代码:MM1;DUAL N-CHANNEL ENHANCEMENT MODE MOSFET

Features Low On-Resistance Low Input Capacitance Fast Switching Speed Low Input/Output Leakage ESD Protected Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) For automotive applications requiring specific change control Applicatio

DIODES

美台半导体

N-Channel MOSFET

Features • Halogen free available upon request by adding suffix -HF • Epoxy meets UL 94 V-0 flammability rating • Moisture Sensitivity Level 1 • High density cell design for low RDS(ON) • Rugged and reliable • Voltage controlled small signal switch • Operating Junction Temperature: -55 to +

MCC

DUAL N-CHANNEL ENHANCEMENT MODE MOSFETS

文件:112.24 Kbytes Page:4 Pages

PANJIT

強茂

60V N-Channel Enhancement Mode MOSFET

文件:176.96 Kbytes Page:5 Pages

PANJIT

強茂

DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

文件:164.69 Kbytes Page:3 Pages

DIODES

美台半导体

60V N-Channel Enhancement Mode MOSFET

文件:164.84 Kbytes Page:5 Pages

PANJIT

強茂

DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

文件:89.71 Kbytes Page:4 Pages

DIODES

美台半导体

N-Channel MOSFET

文件:190.89 Kbytes Page:2 Pages

MCC

300mA, 60V DUAL N-CHANNEL POWER MOSFET

文件:291.27 Kbytes Page:6 Pages

UTC

友顺

60V N-Channel Enhancement Mode MOSFET

文件:155.8 Kbytes Page:5 Pages

PANJIT

強茂

Dual N-channel

文件:448.94 Kbytes Page:9 Pages

INFINEON

英飞凌

DUAL N-CHANNEL ENHANCEMENT MODE MOSFET

文件:217.13 Kbytes Page:5 Pages

DIODES

美台半导体

2N7002DW产品属性

  • 类型

    描述

  • Automotive Compliant PPAP:

    On Request*

  • Polarity:

    N+N

  • ESD Diodes:

    No

  • VDS:

    60 V

  • VGS:

    20 ±V

  • IDS @ TA = +25°C:

    0.115 A

  • PD @ TA = +25°C:

    0.3 W

  • RDS(ON) Max @ VGS (10V):

    N/A mΩ

  • RDS(ON) Max @ VGS (4.5V):

    7500 mΩ

  • RDS(ON) Max @ VGS (2.5V):

    N/A mΩ

  • RDS(ON) Max @ VGS (1.8V):

    N/A mΩ

  • VGS (th) Max:

    2 V

  • QG Typ @ VGS = 4.5V (nC):

    N/A nC

  • QG Typ @ VGS = 10V (nC):

    N/A nC

  • Packages:

    SOT363

更新时间:2026-5-13 23:00:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
ON(安森美)
24+
标准封装
7368
全新原装正品/价格优惠/质量保障
INFINEON/英飞凌
23+
SOT-363
100586
全新原厂原装正品现货,可提供技术支持、样品免费!
FAIRCHILD/仙童
25+
SOT-363
38962
FAIRCHILD/仙童全新特价2N7002DW即刻询购立享优惠#长期有货
INFINEON
2年内
SOT363
16000
英博尔原装优质现货订货渠道商
DIODES/美台
21+
SOT-363
120000
INFINEON
24+
N/A
10000
只做原装,实单最低价支持
DIODES/美台
24+
NA
20000
原装正品支持实单
DIODES
13+
SOT-363
5650
只做原装正品
Infineon(英飞凌)
23+
25650
新到现货,只做原装进口
INFINEON TECHNOLOGIES AG
25+
SMD
918000
明嘉莱只做原装正品现货

2N7002DW数据表相关新闻