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位置：首页 > IC中文资料第399页 > 2N7002DW

2N7002DW价格

参考价格：￥0.1950

型号：2N7002DW 品牌：FAIRCHILD 备注：这里有2N7002DW多少钱，2025年最近7天走势，今日出价，今日竞价，2N7002DW批发/采购报价，2N7002DW行情走势销售排行榜，2N7002DW报价。
型号 功能描述 生产厂家&企业 LOGO 操作
2N7002DW

DUALN-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR

Description ThisMOSFEThasbeendesignedtominimizetheon-stateresistance(Rds(ON))andyetmaintainsuperiorswitchingperformance,makingitidealforhighefficiencypowermanagementapplications. Features •DualN-ChannelMOSFET •LowOn-Resistance •LowGateThresholdVoltage •Lo

DIODES

Diodes Incorporated

DIODES
2N7002DW

DualN-ChannelMOSFET

Features: *LowOn-Resistance:7.5Ω *LowInputCapacitance:22PF *LowOutputCapacitance:11PF *LowThreshole:1.5V(TYE) *FastSwitchingSpeed:11ns MechanicalData: *Case:SOT-363,MoldedPlastic *CaseMaterial-ULFlammabilityRating94V-0 *Terminals:SolderableperMIL-STD-

WEITRON

Weitron Technology

WEITRON
2N7002DW

Plastic-EncapsulatedTransistors

MOSFET(N-Channel) FEATURES Powerdissipation PD:0.2W(Tamb=25℃) Collectorcurrent ID:115mA Collector-basevoltage VDS:60V Operatingandstoragejunctiontemperaturerange TJ,Tstg:-55℃to+150℃

TEL

TRANSYS Electronics Limited

TEL
2N7002DW

60VN-ChannelEnhancementModeMOSFET

DUALN-CHANNELENHANCEMENTMODEMOSFETS Thisspace-efficientdevicecontainstwoelectrically-isolatedN-Channelenhancement-modeMOSFETs.ItcomesinaverysmallSOT-363(SC70-6L)package.Thisdeviceisidealforportableapplicationswhereboardspaceisatapremium. FEATURES ●LowOn-Re

PANJITPan Jit International Inc.

強茂強茂股份有限公司

PANJIT
2N7002DW

N-ChannelEnhancementModeFieldEffectTransistor

Features •DualN-ChannelMOSFET •LowOn-Resistance •LowGateThresholdVoltage •LowInputCapacitance •FastSwitchingSpeed •LowInput/OutputLeakage •Ultra-SmallSurfaceMountPackage •LeadFree/RoHSCompliant

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fairchild
2N7002DW

OptiMOS??Small-Signal-Transistor

Features •DualN-channel •Enhancementmode •Logiclevel •Avalancherated •Fastswitching •QualifiedaccordingtoAECQ101 •100lead-free;RoHScompliant •Halogen-freeaccordingtoIEC61249-2-21

InfineonInfineon Technologies AG

英飞凌英飞凌科技股份公司

Infineon
2N7002DW

SmallSignalMOSFET

SmallSignalMOSFET115mAmps,60Volts N–ChannelSOT–363

SECOSSeCoS Halbleitertechnologie GmbH

喜可士喜可士股份有限公司

SECOS
2N7002DW

300mAmps,60VoltsDUALN-CHANNELPOWERMOSFET

DESCRIPTION TheUTC2N7002DWusesadvancedtechnologytoprovideexcellentRDS(ON),lowgatechargeandoperationwithlowgatevoltages.ThisdeviceissuitableforuseasaloadswitchorinPWMapplications. FEATURES *HighDensityCellDesignforLowRDS(ON) *VoltageControlledSmallSign

UTCUnisonic Technologies

友顺友顺科技股份有限公司

UTC
2N7002DW

N-ChannelMOSFET

Features •Halogenfreeavailableuponrequestbyaddingsuffix-HF •EpoxymeetsUL94V-0flammabilityrating •MoistureSensitivityLevel1 •HighdensitycelldesignforlowRDS(ON) •Ruggedandreliable •Voltagecontrolledsmallsignalswitch •OperatingJunctionTemperature:-55to+

MCCMicro Commercial Components

美微科美微科半导体股份有限公司

MCC
2N7002DW

SOT-363Plastic-EncapsulateMOSFETs

DualN-channelMOSFET FEATURE ●HighdensitycelldesignforlowRDS(ON) ●Voltagecontrolledsmallsignalswitch ●Ruggedandreliable ●Highsaturationcurrentcapability APPLICATION ●LoadSwitchforPortableDevices ●DC/DCConverter

LUGUANGShenzhen Luguang Electronic Technology Co., Ltd

鲁光电子深圳市鲁光电子科技有限公司

LUGUANG
2N7002DW

DualN-ChannelMOSFET

■Features ●VDS(V)=60V ●ID=115mA(VGS=10V) ●RDS(ON)

KEXINGuangdong Kexin Industrial Co.,Ltd

科信电子广东科信实业有限公司

KEXIN
2N7002DW

DualN-channelMOSFET

DualN-channelMOSFET FEATURE ●HighdensitycelldesignforlowRDS(ON) ●Voltagecontrolledsmallsignalswitch ●Ruggedandreliable ●Highsaturationcurrentcapability APPLICATION ●LoadSwitchforPortableDevices ●DC/DCConverter

JIANGSUJiangsu Changjiang Electronics Technology Co., Ltd

长电科技江苏长电科技股份有限公司

JIANGSU
2N7002DW

Plastic-EncapsulateMOSFETs

DualN-channelMOSFET FEATURE ●HighdensitycelldesignforlowRDS(ON) ●Voltagecontrolledsmallsignalswitch ●Ruggedandreliable ●Highsaturationcurrentcapability APPLICATION ●LoadSwitchforPortableDevices ●DC/DCConverter

SKTECHNOLGYSHIKE Electronics

时科广东时科微实业有限公司

SKTECHNOLGY
2N7002DW

FieldEffectTransistor-N-Channel,EnhancementMode

Features •DualN−ChannelMOSFET •LowOn−Resistance •LowGateThresholdVoltage •LowInputCapacitance •FastSwitchingSpeed •LowInput/OutputLeakage •Ultra−SmallSurfaceMountPackage •TheseDevicesarePb−Free,HalogenFree/BFRFreeandareRoHSCompliant

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI
2N7002DW

N-ChannelMOSFET

Features HighdensitycelldesignforLowRDS（on） Voltagecontrolledsmallsignalswitch Ruggedandreliable Highsaturationcurrentcapability ESDprotected LoadSwitchforPortableDevices DC/DCConverter Applications

EVVOSEMIEVER SEMICONDUCTOR CO.,LIMITED

翊欧翊欧半导体

EVVOSEMI
2N7002DW

300mA,60VDUALN-CHANNELPOWERMOSFET

文件：291.27 Kbytes Page：6 Pages

UTCUnisonic Technologies

友顺友顺科技股份有限公司

UTC
2N7002DW

WedeclarethatthematerialofproductcompliancewithRoHSrequirementsandHalogenFree.

文件：622.91 Kbytes Page：6 Pages

LEIDITECHShanghai Leiditech Electronic Technology Co., Ltd

雷卯电子上海雷卯电子科技有限公司

LEIDITECH
2N7002DW

DualN-channel

文件：448.94 Kbytes Page：9 Pages

InfineonInfineon Technologies AG

英飞凌英飞凌科技股份公司

Infineon
2N7002DW

DUALN-CHANNELENHANCEMENTMODEMOSFET

文件：402.74 Kbytes Page：5 Pages

DIODES

Diodes Incorporated

DIODES
2N7002DW

DUALN-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR

文件：89.71 Kbytes Page：4 Pages

DIODES

Diodes Incorporated

DIODES
2N7002DW

N-ChannelMOSFET

文件：190.89 Kbytes Page：2 Pages

MCCMicro Commercial Components

美微科美微科半导体股份有限公司

MCC
2N7002DW

60VN-ChannelEnhancementModeMOSFET

文件：164.84 Kbytes Page：5 Pages

PANJITPan Jit International Inc.

強茂強茂股份有限公司

PANJIT
2N7002DW

DUALN-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR

文件：164.69 Kbytes Page：3 Pages

DIODES

Diodes Incorporated

DIODES
2N7002

N-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR

Description •N-channelenhancementmodefieldeffecttransistor,designedforhighspeedpulsedamplifieranddriverapplications,whichismanufactoredbytheN-ChannelDMOSprocess. Features •HighdensitycelldesignforlowRDS(ON). •Voltagecontrolledsmallsignalswitching. •Ruggeda

PANJITPan Jit International Inc.

強茂強茂股份有限公司

PANJIT
2N7002

N-ChannelEnhancement-ModeVerticalDMOSFETs

GeneralDescription TheSupertex2N7002isanenhancement-mode(normallyoff)transistorthatutilizesaverticalDMOSstructureandSupertex’swell-provensilicon-gatemanufacturingprocess.Thiscombinationproducesadevicewiththepowerhandlingcapabilitiesofbipolartransistors,andtheh

SUTEX

Supertex, Inc

SUTEX
2N7002

N-CHANNELENHANCEMENTMODEVERTICALDMOSFET

FEATURES *60VoltVCEO

Zetex

Zetex Semiconductors

Zetex
2N7002

N-Channel60-V(D-S)MOSFET

FEATURES ●LowOn-Resistance:2.5Ω ●LowThreshold:2.1V ●LowInputCapacitance:22pF ●FastSwitchingSpeed:7ns ●LowInputandOutputLeakage BENEFITS ●LowOffsetVoltage ●Low-VoltageOperation ●EasilyDrivenWithoutBuffer ●High-SpeedCircuits ●LowErrorVoltage APPLICATI

VishayVishay Siliconix

威世科技威世科技半导体

Vishay
2N7002

N-ChannelEnhancementModeFieldEffectTransistor

Description TheseN-channelenhancementmodefieldeffecttransistorsareproducedusingFairchildsproprietary,highcelldensity,DMOStechnology.Theseproductshavebeendesignedtominimizeon-stateresistancewhileprovidingrugged,reliable,andfastswitchingperformance.Theycanbeused

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fairchild
2N7002DW1T1

115mAmps,60Volts

N–ChannelSOT-363 •WedeclarethatthematerialofproductareHalogenFreeand compliancewithRoHSrequirements. •ESDProtected:1000V •Pb-Freepackageisavailable RoHSproductforpackingcodesuffixG HalogenfreeproductforpackingcodesuffixH

WILLASWILLAS ELECTRONIC CORP

威伦威伦电子股份有限公司

WILLAS
2N7002DW-7

DUALN-CHANNELENHANCEMENTMODEMOSFET

Features •DualN-ChannelMOSFET •LowOn-Resistance •LowGateThresholdVoltage •LowInputCapacitance •FastSwitchingSpeed •LowInput/OutputLeakage •Ultra-SmallSurfaceMountPackage •AvailableinLeadFree/RoHSCompliantVersion(Note2)

DIODES

Diodes Incorporated

DIODES
2N7002DWA

DUALN-CHANNELENHANCEMENTMODEMOSFET

Description ThisnewgenerationMOSFETisdesignedtominimizetheon-stateresistance(RDS(ON)),yetmaintainsuperiorswitchingperformance,makingitidealforhigh-efficiencypowermanagementapplications. Features •DualN-ChannelMOSFET •LowOn-Resistance •LowGateThresholdVoltage

DIODES

Diodes Incorporated

DIODES
2N7002DWA-13

DUALN-CHANNELENHANCEMENTMODEMOSFET

Description ThisnewgenerationMOSFETisdesignedtominimizetheon-stateresistance(RDS(ON)),yetmaintainsuperiorswitchingperformance,makingitidealforhigh-efficiencypowermanagementapplications. Features •DualN-ChannelMOSFET •LowOn-Resistance •LowGateThresholdVoltage

DIODES

Diodes Incorporated

DIODES
2N7002DWA-7

DUALN-CHANNELENHANCEMENTMODEMOSFET

Description ThisnewgenerationMOSFETisdesignedtominimizetheon-stateresistance(RDS(ON)),yetmaintainsuperiorswitchingperformance,makingitidealforhigh-efficiencypowermanagementapplications. Features •DualN-ChannelMOSFET •LowOn-Resistance •LowGateThresholdVoltage

DIODES

Diodes Incorporated

DIODES
2N7002DWAQ-13

DUALN-CHANNELENHANCEMENTMODEMOSFET

Description ThisnewgenerationMOSFETisdesignedtominimizetheon-stateresistance(RDS(ON)),yetmaintainsuperiorswitchingperformance,makingitidealforhigh-efficiencypowermanagementapplications. Features •DualN-ChannelMOSFET •LowOn-Resistance •LowGateThresholdVoltage

DIODES

Diodes Incorporated

DIODES
2N7002DWAQ-7

DUALN-CHANNELENHANCEMENTMODEMOSFET

Description ThisnewgenerationMOSFETisdesignedtominimizetheon-stateresistance(RDS(ON)),yetmaintainsuperiorswitchingperformance,makingitidealforhigh-efficiencypowermanagementapplications. Features •DualN-ChannelMOSFET •LowOn-Resistance •LowGateThresholdVoltage

DIODES

Diodes Incorporated

DIODES
2N7002DWG-AL6-R

300mAmps,60VoltsDUALN-CHANNELPOWERMOSFET

DESCRIPTION TheUTC2N7002DWusesadvancedtechnologytoprovideexcellentRDS(ON),lowgatechargeandoperationwithlowgatevoltages.ThisdeviceissuitableforuseasaloadswitchorinPWMapplications. FEATURES *HighDensityCellDesignforLowRDS(ON) *VoltageControlledSmallSign

UTCUnisonic Technologies

友顺友顺科技股份有限公司

UTC
2N7002DWH6327

OptiMOS??Small-Signal-Transistor

Features •DualN-channel •Enhancementmode •Logiclevel •Avalancherated •Fastswitching •QualifiedaccordingtoAECQ101 •100lead-free;RoHScompliant •Halogen-freeaccordingtoIEC61249-2-21

InfineonInfineon Technologies AG

英飞凌英飞凌科技股份公司

Infineon
2N7002DWK

DUALN-CHANNELENHANCEMENTMODEMOSFET

Features DualN-ChannelMOSFET LowOn-Resistance LowGateThresholdVoltage LowInputCapacitance FastSwitchingSpeed LowInput/OutputLeakage ESDProtected TotallyLead-Free&FullyRoHSCompliant(Notes1&2) HalogenandAntimonyFree.“Green”Device(Note3) Forautomotiveapplicati

DIODES

Diodes Incorporated

DIODES
2N7002DWK-13

DUALN-CHANNELENHANCEMENTMODEMOSFET

Features DualN-ChannelMOSFET LowOn-Resistance LowGateThresholdVoltage LowInputCapacitance FastSwitchingSpeed LowInput/OutputLeakage ESDProtected TotallyLead-Free&FullyRoHSCompliant(Notes1&2) HalogenandAntimonyFree.“Green”Device(Note3) Forautomotiveapplicati

DIODES

Diodes Incorporated

DIODES
2N7002DWK-7

DUALN-CHANNELENHANCEMENTMODEMOSFET

Features DualN-ChannelMOSFET LowOn-Resistance LowGateThresholdVoltage LowInputCapacitance FastSwitchingSpeed LowInput/OutputLeakage ESDProtected TotallyLead-Free&FullyRoHSCompliant(Notes1&2) HalogenandAntimonyFree.“Green”Device(Note3) Forautomotiveapplicati

DIODES

Diodes Incorporated

DIODES
2N7002DWKX

DUALN-CHANNELENHANCEMENTMODEMOSFET

Features DualN-ChannelMOSFET LowOn-Resistance LowGateThresholdVoltage LowInputCapacitance FastSwitchingSpeed SmallSurfaceMountPackage ESDProtectedupto2kV TotallyLead-Free&FullyRoHSCompliant(Notes1&2) HalogenandAntimonyFree.“Green”Device(No

DIODES

Diodes Incorporated

DIODES
2N7002DWKX-13

DUALN-CHANNELENHANCEMENTMODEMOSFET

Features DualN-ChannelMOSFET LowOn-Resistance LowGateThresholdVoltage LowInputCapacitance FastSwitchingSpeed SmallSurfaceMountPackage ESDProtectedupto2kV TotallyLead-Free&FullyRoHSCompliant(Notes1&2) HalogenandAntimonyFree.“Green”Device(No

DIODES

Diodes Incorporated

DIODES
2N7002DWKX-7

DUALN-CHANNELENHANCEMENTMODEMOSFET

Features DualN-ChannelMOSFET LowOn-Resistance LowGateThresholdVoltage LowInputCapacitance FastSwitchingSpeed SmallSurfaceMountPackage ESDProtectedupto2kV TotallyLead-Free&FullyRoHSCompliant(Notes1&2) HalogenandAntimonyFree.“Green”Device(No

DIODES

Diodes Incorporated

DIODES
2N7002DWL

DualN-ChannelMOSFET

Features •HighDensityCellDesignForLowRDS(ON) •VoltageControlledSmallSignalSwitch •EpoxyMeetsUL94V-0FlammabilityRating •MoistureSensitivityLevel1 •HalogenFreeAvailableUponRequestByAddingSuffix-HF •LeadFreeFinish/RoHSCompliant(PSuffixDesignatesRoHS C

MCCMicro Commercial Components

美微科美微科半导体股份有限公司

MCC
2N7002DWL-AL6-R

300mAmps,60VoltsDUALN-CHANNELPOWERMOSFET

DESCRIPTION TheUTC2N7002DWusesadvancedtechnologytoprovideexcellentRDS(ON),lowgatechargeandoperationwithlowgatevoltages.ThisdeviceissuitableforuseasaloadswitchorinPWMapplications. FEATURES *HighDensityCellDesignforLowRDS(ON) *VoltageControlledSmallSign

UTCUnisonic Technologies

友顺友顺科技股份有限公司

UTC
2N7002DWQ

DUALN-CHANNELENHANCEMENTMODEMOSFET

Features DualN-ChannelMOSFET LowOn-Resistance LowGateThresholdVoltage LowInputCapacitance FastSwitchingSpeed LowInput/OutputLeakage Ultra-SmallSurfaceMountPackage TotallyLead-Free&FullyRoHSCompliant(Notes1&2) HalogenandAntimonyFree.“Green”Device(Note3) The

DIODES

Diodes Incorporated

DIODES
2N7002DWQ-13-F

DUALN-CHANNELENHANCEMENTMODEMOSFET

Features DualN-ChannelMOSFET LowOn-Resistance LowGateThresholdVoltage LowInputCapacitance FastSwitchingSpeed LowInput/OutputLeakage Ultra-SmallSurfaceMountPackage TotallyLead-Free&FullyRoHSCompliant(Notes1&2) HalogenandAntimonyFree.“Green”Device(Note3) The

DIODES

Diodes Incorporated

DIODES
2N7002DWQ-7-F

DUALN-CHANNELENHANCEMENTMODEMOSFET

Features DualN-ChannelMOSFET LowOn-Resistance LowGateThresholdVoltage LowInputCapacitance FastSwitchingSpeed LowInput/OutputLeakage Ultra-SmallSurfaceMountPackage TotallyLead-Free&FullyRoHSCompliant(Notes1&2) HalogenandAntimonyFree.“Green”Device(Note3) The

DIODES

Diodes Incorporated

DIODES
2N7002DWS

DUALN-CHANNELENHANCEMENTMODEMOSFET

Features LowOn-Resistance LowInputCapacitance FastSwitchingSpeed LowInput/OutputLeakage ESDProtected TotallyLead-Free&FullyRoHSCompliant(Notes1&2) HalogenandAntimonyFree.“Green”Device(Note3) Forautomotiveapplicationsrequiringspecificchangecontrol Applicatio

DIODES

Diodes Incorporated

DIODES
2N7002DWS-7

DUALN-CHANNELENHANCEMENTMODEMOSFET

Features LowOn-Resistance LowInputCapacitance FastSwitchingSpeed LowInput/OutputLeakage ESDProtected TotallyLead-Free&FullyRoHSCompliant(Notes1&2) HalogenandAntimonyFree.“Green”Device(Note3) Forautomotiveapplicationsrequiringspecificchangecontrol Applicatio

DIODES

Diodes Incorporated

DIODES
2N7002DW-TP

N-ChannelMOSFET

Features •Halogenfreeavailableuponrequestbyaddingsuffix-HF •EpoxymeetsUL94V-0flammabilityrating •MoistureSensitivityLevel1 •HighdensitycelldesignforlowRDS(ON) •Ruggedandreliable •Voltagecontrolledsmallsignalswitch •OperatingJunctionTemperature:-55to+

MCCMicro Commercial Components

美微科美微科半导体股份有限公司

MCC
2N7002DW_05

DUALN-CHANNELENHANCEMENTMODEMOSFETS

文件：112.24 Kbytes Page：4 Pages

PANJITPan Jit International Inc.

強茂強茂股份有限公司

PANJIT
2N7002DW_08

60VN-ChannelEnhancementModeMOSFET

文件：176.96 Kbytes Page：5 Pages

PANJITPan Jit International Inc.

強茂強茂股份有限公司

PANJIT
2N7002DW_1

60VN-ChannelEnhancementModeMOSFET

文件：164.84 Kbytes Page：5 Pages

PANJITPan Jit International Inc.

強茂強茂股份有限公司

PANJIT
2N7002DW_1

DUALN-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR

文件：164.69 Kbytes Page：3 Pages

DIODES

Diodes Incorporated

DIODES
2N7002DW_10

DUALN-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR

文件：89.71 Kbytes Page：4 Pages

DIODES

Diodes Incorporated

DIODES
2N7002DW_11

N-ChannelMOSFET

文件：190.89 Kbytes Page：2 Pages

MCCMicro Commercial Components

美微科美微科半导体股份有限公司

MCC
2N7002DW_12

300mA,60VDUALN-CHANNELPOWERMOSFET

文件：291.27 Kbytes Page：6 Pages

UTCUnisonic Technologies

友顺友顺科技股份有限公司

UTC
2N7002DW_14

60VN-ChannelEnhancementModeMOSFET

文件：155.8 Kbytes Page：5 Pages

PANJITPan Jit International Inc.

強茂強茂股份有限公司

PANJIT
2N7002DW_14

DualN-channel

文件：448.94 Kbytes Page：9 Pages

InfineonInfineon Technologies AG

英飞凌英飞凌科技股份公司

Infineon

2N7002DW产品属性

  • 类型

    描述

  • 型号

    2N7002DW

  • 功能描述

    MOSFET N-Chan Enhancement Mode Field Effect

  • RoHS

    否

  • 制造商

    STMicroelectronics

  • 晶体管极性

    N-Channel

  • 汲极/源极击穿电压

    650 V

  • 闸/源击穿电压

    25 V

  • 漏极连续电流

    130 A 电阻汲极/源极

  • RDS（导通）

    0.014 Ohms

  • 配置

    Single

  • 安装风格

    Through Hole

  • 封装/箱体

    Max247

  • 封装

    Tube

2N7002DW供应商更多...

更新时间：2025-5-15 23:00:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
深圳市高捷芯城科技有限公司
2N7002DW1T1G
ON(安森美)
24+
标准封装
7368
全新原装正品/价格优惠/质量保障
询价
深圳市科芯源微电子有限公司
2N7002DWH6327XTSA1
INFINEON/英飞凌
23+
SOT-363
100586
全新原厂原装正品现货,可提供技术支持、样品免费!
询价
中天科工半导体（深圳）有限公司
2N7002DWA-7
DIODES/美台
24+
SOT-363
45000
热卖优势现货
询价
深圳市科恒伟业电子有限公司
2N7002DW
FAIRCHILD
2018+
SOT363
6528
承若只做进口原装正品假一赔十!
询价
深圳市煦洪科技有限公司
2N7002DWH6327
INFINEON/英飞凌
25+
原厂封装
10280
原厂授权一级代理,专注军工、汽车、医疗、工业、新能源、电力!
询价
深圳市华睿芯科技有限公司
2N7002DW
24+
SOT-23
20000
全新原厂原装，进口正品现货，正规渠道可含税！！
询价
深圳市讯顺达科技有限公司
2N7002DW
Slkor/萨科微
24+
SOT-363
50000
Slkor/萨科微一级代理,价格优势
询价
深圳市永贝尔科技有限公司
2N7002DW
Diodes(美台)
2023+
N/A
4550
全新原装正品
询价
深圳市星宇佳科技有限公司
2N7002DW-7-F
DIODES/美台
20+
SOT363
1020000
深圳现货,假一赔百
询价
深圳市英博尔电子有限公司
2N7002DWH6327XTSA1
INFINEON
2年内
SOT363
16000
英博尔原装优质现货订货渠道商
询价

2N7002DW芯片相关品牌

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  • MMD
  • NJSEMI
  • Vicor
  • WALL

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