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2N7002DW价格

参考价格：￥0.1950

型号：2N7002DW 品牌：FAIRCHILD 备注：这里有2N7002DW多少钱，2025年最近7天走势，今日出价，今日竞价，2N7002DW批发/采购报价，2N7002DW行情走势销售排行榜，2N7002DW报价。

型号	功能描述	生产厂家&企业
2N7002DW	DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Description This MOSFET has been designed to minimize the on-state resistance (Rds(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. Features • Dual N-Channel MOSFET • Low On-Resistance • Low Gate Threshold Voltage • Lo	DIODESDiodes Incorporated 美台半导体
2N7002DW	Dual N-Channel MOSFET Features: * Low On-Resistance : 7.5 Ω * Low Input Capacitance: 22PF * Low Out put Capacitance : 11PF * Low Threshole :1 .5V(TYE) * Fast Switching Speed : 11ns Mechanical Data: * Case: SOT-363, Molded Plastic * Case Material-UL Flammability Rating 94V-0 * Terminals: Solderable per MIL-STD-	WEITRON Weitron Technology
2N7002DW	Plastic-Encapsulated Transistors MOSFET (N-Channel) FEATURES Power dissipation PD : 0.2 W (Tamb=25℃) Collector current ID: 115 mA Collector-base voltage VDS: 60 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃	TELTokyo Electron Ltd. 东电电子东京电子有限公司
2N7002DW	60V N-Channel Enhancement Mode MOSFET DUAL N-CHANNEL ENHANCEMENT MODE MOSFETS This space-efficient device contains two electrically-isolated N-Channel enhancement-mode MOSFETs. It comes in a very small SOT-363 (SC70-6L) package. This device is ideal for portable applications where board space is at a premium. FEATURES ● Low On-Re	PANJITPan Jit International Inc. 強茂強茂股份有限公司
2N7002DW	N-Channel Enhancement Mode Field Effect Transistor Features • Dual N-Channel MOSFET • Low On-Resistance • Low Gate Threshold Voltage • Low Input Capacitance • Fast Switching Speed • Low Input/Output Leakage • Ultra-Small Surface Mount Package • Lead Free/RoHS Compliant	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司
2N7002DW	OptiMOS??Small-Signal-Transistor Features • Dual N-channel • Enhancement mode • Logic level • Avalanche rated • Fast switching • Qualified according to AEC Q101 • 100 lead-free; RoHS compliant • Halogen-free according to IEC61249-2-21	InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司
2N7002DW	Small Signal MOSFET Small Signal MOSFET 115 mAmps, 60 Volts N–Channel SOT–363	SECOSSeCoS Halbleitertechnologie GmbH 喜可士喜可士股份有限公司
2N7002DW	300m Amps, 60 Volts DUAL N-CHANNEL POWER MOSFET DESCRIPTION The UTC 2N7002DW uses advanced technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications. FEATURES * High Density Cell Design for Low RDS(ON) * Voltage Controlled Small Sign	UTCUnisonic Technologies 友顺友顺科技股份有限公司
2N7002DW	N-Channel MOSFET Features • Halogen free available upon request by adding suffix -HF • Epoxy meets UL 94 V-0 flammability rating • Moisture Sensitivity Level 1 • High density cell design for low RDS(ON) • Rugged and reliable • Voltage controlled small signal switch • Operating Junction Temperature: -55 to +	MCCMicro Commercial Components 美微科美微科半导体股份有限公司
2N7002DW	SOT-363 Plastic-Encapsulate MOSFETs Dual N-channel MOSFET FEATURE ● High density cell design for low RDS(ON) ● Voltage controlled small signal switch ● Rugged and reliable ● High saturation current capability APPLICATION ● Load Switch for Portable Devices ● DC/DC Converter	LUGUANGShenzhen Luguang Electronic Technology Co., Ltd 鲁光电子深圳市鲁光电子科技有限公司
2N7002DW	Dual N-Channel MOSFET ■ Features ● VDS (V) = 60V ● ID = 115 mA (VGS = 10V) ● RDS(ON)	KEXINGuangdong Kexin Industrial Co.,Ltd 科信电子广东科信实业有限公司
2N7002DW	Dual N-channel MOSFET Dual N-channel MOSFET FEATURE ● High density cell design for low RDS(ON) ● Voltage controlled small signal switch ● Rugged and reliable ● High saturation current capability APPLICATION ● Load Switch for Portable Devices ● DC/DC Converter	JIANGSUJiangsu Changjiang Electronics Technology Co., Ltd 长电科技江苏长电科技股份有限公司
2N7002DW	Plastic-Encapsulate MOSFETs Dual N-channel MOSFET FEATURE ● High density cell design for low RDS(ON) ● Voltage controlled small signal switch ● Rugged and reliable ● High saturation current capability APPLICATION ● Load Switch for Portable Devices ● DC/DC Converter	SKTECHNOLGYSHIKE Electronics 时科广东时科微实业有限公司
2N7002DW	Field Effect Transistor - N-Channel, Enhancement Mode Features • Dual N−Channel MOSFET • Low On−Resistance • Low Gate Threshold Voltage • Low Input Capacitance • Fast Switching Speed • Low Input/Output Leakage • Ultra−Small Surface Mount Package • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant	ONSEMION Semiconductor 安森美半导体安森美半导体公司
2N7002DW	N-Channel MOSFET Features High density cell design for Low RDS（on） Voltage controlled small signal switch Rugged and reliable High saturation current capability ESD protected Load Switch for Portable Devices DC/DC Converter Applications	EVVOSEMIEVER SEMICONDUCTOR CO.,LIMITED 翊欧翊欧半导体
2N7002DW	300mA, 60V DUAL N-CHANNEL POWER MOSFET 文件：291.27 Kbytes Page：6 Pages	UTCUnisonic Technologies 友顺友顺科技股份有限公司
2N7002DW	We declare that the material of product compliance with RoHS requirements and Halogen Free. 文件：622.91 Kbytes Page：6 Pages	LEIDITECHShanghai Leiditech Electronic Technology Co., Ltd 雷卯电子上海雷卯电子科技有限公司
2N7002DW	Dual N-channel 文件：448.94 Kbytes Page：9 Pages	InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司
2N7002DW	DUAL N-CHANNEL ENHANCEMENT MODE MOSFET 文件：402.74 Kbytes Page：5 Pages	DIODESDiodes Incorporated 美台半导体
2N7002DW	DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR 文件：89.71 Kbytes Page：4 Pages	DIODESDiodes Incorporated 美台半导体
2N7002DW	N-Channel MOSFET 文件：190.89 Kbytes Page：2 Pages	MCCMicro Commercial Components 美微科美微科半导体股份有限公司
2N7002DW	60V N-Channel Enhancement Mode MOSFET 文件：164.84 Kbytes Page：5 Pages	PANJITPan Jit International Inc. 強茂強茂股份有限公司
2N7002DW	DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR 文件：164.69 Kbytes Page：3 Pages	DIODESDiodes Incorporated 美台半导体
2N7002	N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Description • N-channel enhancement mode field effect transistor, designed for high speed pulsed amplifier and driver applications, which is manufactored by the N-Channel DMOS process. Features • High density cell design for low RDS(ON). • Voltage controlled small signal switching. • Rugged a	PANJITPan Jit International Inc. 強茂強茂股份有限公司
2N7002	N-Channel Enhancement-Mode Vertical DMOS FETs General Description The Supertex 2N7002 is an enhancement-mode (normally off) transistor that utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors, and the h	SUTEX Supertex, Inc
2N7002	N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET FEATURES * 60 Volt VCEO	Zetex Zetex Semiconductors
2N7002	N-Channel 60-V (D-S) MOSFET FEATURES ● Low On-Resistance: 2.5 Ω ● Low Threshold: 2.1 V ● Low Input Capacitance: 22 pF ● Fast Switching Speed: 7 ns ● Low Input and Output Leakage BENEFITS ● Low Offset Voltage ● Low-Voltage Operation ● Easily Driven Without Buffer ● High-Speed Circuits ● Low Error Voltage APPLICATI	VishayVishay Siliconix 威世科技威世科技半导体
2N7002	N-Channel Enhancement Mode Field Effect Transistor Description These N-channel enhancement mode field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. These products have been designed to minimize on-state resistance while providing rugged, reliable, and fast switching performance. They can be used	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司
2N7002DW1T1	115 mAmps,60 Volts N–Channel SOT-363 • We declare that the material of product are Halogen Free and compliance with RoHS requirements. • ESD Protected:1000V • Pb-Free package is available RoHS product for packing code suffix G Halogen free product for packing code suffix H	WILLASWILLAS ELECTRONIC CORP 威伦威伦电子股份有限公司
2N7002DW-7	DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Features • Dual N-Channel MOSFET • Low On-Resistance • Low Gate Threshold Voltage • Low Input Capacitance • Fast Switching Speed • Low Input/Output Leakage • Ultra-Small Surface Mount Package • Available in Lead Free/RoHS Compliant Version (Note 2)	DIODESDiodes Incorporated 美台半导体
2N7002DWA	DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Description This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)), yet maintain superior switching performance, making it ideal for high-efficiency power management applications. Features • Dual N-Channel MOSFET • Low On-Resistance • Low Gate Threshold Voltage	DIODESDiodes Incorporated 美台半导体
2N7002DWA-13	DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Description This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)), yet maintain superior switching performance, making it ideal for high-efficiency power management applications. Features • Dual N-Channel MOSFET • Low On-Resistance • Low Gate Threshold Voltage	DIODESDiodes Incorporated 美台半导体
2N7002DWA-7	DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Description This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)), yet maintain superior switching performance, making it ideal for high-efficiency power management applications. Features • Dual N-Channel MOSFET • Low On-Resistance • Low Gate Threshold Voltage	DIODESDiodes Incorporated 美台半导体
2N7002DWAQ-13	DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Description This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)), yet maintain superior switching performance, making it ideal for high-efficiency power management applications. Features • Dual N-Channel MOSFET • Low On-Resistance • Low Gate Threshold Voltage	DIODESDiodes Incorporated 美台半导体
2N7002DWAQ-7	DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Description This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)), yet maintain superior switching performance, making it ideal for high-efficiency power management applications. Features • Dual N-Channel MOSFET • Low On-Resistance • Low Gate Threshold Voltage	DIODESDiodes Incorporated 美台半导体
2N7002DWG-AL6-R	300m Amps, 60 Volts DUAL N-CHANNEL POWER MOSFET DESCRIPTION The UTC 2N7002DW uses advanced technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications. FEATURES * High Density Cell Design for Low RDS(ON) * Voltage Controlled Small Sign	UTCUnisonic Technologies 友顺友顺科技股份有限公司
2N7002DWH6327	OptiMOS??Small-Signal-Transistor Features • Dual N-channel • Enhancement mode • Logic level • Avalanche rated • Fast switching • Qualified according to AEC Q101 • 100 lead-free; RoHS compliant • Halogen-free according to IEC61249-2-21	InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司
2N7002DW-HF	MOSFET Features - Voltage controlled small signal switch. - Low input capacitance. - Fast switching speed. - Low input / output leakage.	COMCHIPComchip Technology 典琦典琦科技股份有限公司
2N7002DWK	DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Features Dual N-Channel MOSFET Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage ESD Protected Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) For automotive applicati	DIODESDiodes Incorporated 美台半导体
2N7002DWK-13	DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Features Dual N-Channel MOSFET Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage ESD Protected Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) For automotive applicati	DIODESDiodes Incorporated 美台半导体
2N7002DWK-7	DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Features Dual N-Channel MOSFET Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage ESD Protected Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) For automotive applicati	DIODESDiodes Incorporated 美台半导体
2N7002DWKX	DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Features  Dual N-Channel MOSFET  Low On-Resistance  Low Gate Threshold Voltage  Low Input Capacitance  Fast Switching Speed  Small Surface Mount Package  ESD Protected up to 2kV  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free. “Green” Device (No	DIODESDiodes Incorporated 美台半导体
2N7002DWKX-13	DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Features  Dual N-Channel MOSFET  Low On-Resistance  Low Gate Threshold Voltage  Low Input Capacitance  Fast Switching Speed  Small Surface Mount Package  ESD Protected up to 2kV  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free. “Green” Device (No	DIODESDiodes Incorporated 美台半导体
2N7002DWKX-7	DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Features  Dual N-Channel MOSFET  Low On-Resistance  Low Gate Threshold Voltage  Low Input Capacitance  Fast Switching Speed  Small Surface Mount Package  ESD Protected up to 2kV  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free. “Green” Device (No	DIODESDiodes Incorporated 美台半导体
2N7002DWL	Dual N-Channel MOSFET Features • High Density Cell Design For Low RDS(ON) • Voltage Controlled Small Signal Switch • Epoxy Meets UL 94 V-0 Flammability Rating • Moisture Sensitivity Level 1 • Halogen Free Available Upon Request By Adding Suffix -HF • Lead Free Finish/RoHS Compliant (P Suffix Designates RoHS C	MCCMicro Commercial Components 美微科美微科半导体股份有限公司
2N7002DWL-AL6-R	300m Amps, 60 Volts DUAL N-CHANNEL POWER MOSFET DESCRIPTION The UTC 2N7002DW uses advanced technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications. FEATURES * High Density Cell Design for Low RDS(ON) * Voltage Controlled Small Sign	UTCUnisonic Technologies 友顺友顺科技股份有限公司
2N7002DWQ	DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Features Dual N-Channel MOSFET Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Ultra-Small Surface Mount Package Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) The	DIODESDiodes Incorporated 美台半导体
2N7002DWQ-13-F	DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Features Dual N-Channel MOSFET Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Ultra-Small Surface Mount Package Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) The	DIODESDiodes Incorporated 美台半导体
2N7002DWQ-7-F	DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Features Dual N-Channel MOSFET Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Ultra-Small Surface Mount Package Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) The	DIODESDiodes Incorporated 美台半导体
2N7002DWS	DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Features Low On-Resistance Low Input Capacitance Fast Switching Speed Low Input/Output Leakage ESD Protected Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) For automotive applications requiring specific change control Applicatio	DIODESDiodes Incorporated 美台半导体
2N7002DWS-7	DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Features Low On-Resistance Low Input Capacitance Fast Switching Speed Low Input/Output Leakage ESD Protected Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) For automotive applications requiring specific change control Applicatio	DIODESDiodes Incorporated 美台半导体
2N7002DW-TP	N-Channel MOSFET Features • Halogen free available upon request by adding suffix -HF • Epoxy meets UL 94 V-0 flammability rating • Moisture Sensitivity Level 1 • High density cell design for low RDS(ON) • Rugged and reliable • Voltage controlled small signal switch • Operating Junction Temperature: -55 to +	MCCMicro Commercial Components 美微科美微科半导体股份有限公司
2N7002DW_05	DUAL N-CHANNEL ENHANCEMENT MODE MOSFETS 文件：112.24 Kbytes Page：4 Pages	PANJITPan Jit International Inc. 強茂強茂股份有限公司
2N7002DW_08	60V N-Channel Enhancement Mode MOSFET 文件：176.96 Kbytes Page：5 Pages	PANJITPan Jit International Inc. 強茂強茂股份有限公司
2N7002DW_1	60V N-Channel Enhancement Mode MOSFET 文件：164.84 Kbytes Page：5 Pages	PANJITPan Jit International Inc. 強茂強茂股份有限公司
2N7002DW_1	DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR 文件：164.69 Kbytes Page：3 Pages	DIODESDiodes Incorporated 美台半导体
2N7002DW_10	DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR 文件：89.71 Kbytes Page：4 Pages	DIODESDiodes Incorporated 美台半导体
2N7002DW_11	N-Channel MOSFET 文件：190.89 Kbytes Page：2 Pages	MCCMicro Commercial Components 美微科美微科半导体股份有限公司
2N7002DW_12	300mA, 60V DUAL N-CHANNEL POWER MOSFET 文件：291.27 Kbytes Page：6 Pages	UTCUnisonic Technologies 友顺友顺科技股份有限公司
2N7002DW_14	60V N-Channel Enhancement Mode MOSFET 文件：155.8 Kbytes Page：5 Pages	PANJITPan Jit International Inc. 強茂強茂股份有限公司

2N7002DW产品属性

类型
描述
型号
2N7002DW
功能描述
MOSFET N-Chan Enhancement Mode Field Effect
RoHS
否
制造商
STMicroelectronics
晶体管极性
N-Channel
汲极/源极击穿电压
650 V
闸/源击穿电压
25 V
漏极连续电流
130 A 电阻汲极/源极
RDS（导通）
0.014 Ohms
配置
Single
安装风格
Through Hole
封装/箱体
Max247
封装
Tube

2N7002DW供应商更多...

更新时间：2025-8-5 20:00:00

IC供应商	芯片型号	品牌	批号	封装	库存	备注	价格
深圳市科芯源微电子有限公司	2N7002DWH6327XTSA1	INFINEON/英飞凌	23+	SOT-363	100586	全新原厂原装正品现货,可提供技术支持、样品免费!	询价
深圳市盈慧通电子有限公司	2N7002DW1T1G	ON(安森美)	2511		1265	电子元器件采购降本 30%!盈慧通原厂直采,砍掉中间差价	询价
深圳市凌旭科技有限公司	2N7002DW-7-F	DIODES	21+	SOT363	99000	十年信誉,只做原装,有挂就有现货!	询价
深圳市粤骏腾电子科技有限公司	2N7002DW-7-F	DIODES/美台	24+	NA	20000	原装正品支持实单	询价
深圳市英博尔电子有限公司	2N7002DWH6327XTSA1	INFINEON	2年内	SOT363	16000	英博尔原装优质现货订货渠道商	询价
深圳市英科美电子有限公司	2N7002DWH6327	INFINEON/英飞凌	24+	SOT363	18126	原装进口假一罚十	询价
深圳市华康联电子科技有限公司	2N7002DWH6327XTSA1	INFINEON	24+	N/A	10000	只做原装,实单最低价支持	询价
深圳市润联芯城科技有限公司	2N7002DW-7-F	DIODES	13+	SOT-363	5650	只做原装正品	询价
深圳市讯顺达科技有限公司	2N7002DW	Slkor/萨科微	24+	SOT-363	50000	Slkor/萨科微一级代理,价格优势	询价
深圳市汇莱威科技有限公司	2N7002DW-7	ZETEX/DIODES	24+	SOT363	500236	免费送样原盒原包现货一手渠道联系	询价