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2N7002DW价格
参考价格：￥0.1950
型号：2N7002DW 品牌：FAIRCHILD 备注：这里有2N7002DW多少钱，2025年最近7天走势，今日出价，今日竞价，2N7002DW批发/采购报价，2N7002DW行情走势销售排行榜，2N7002DW报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
2N7002DW | N-Channel Enhancement Mode Field Effect Transistor Features • Dual N-Channel MOSFET • Low On-Resistance • Low Gate Threshold Voltage • Low Input Capacitance • Fast Switching Speed • Low Input/Output Leakage • Ultra-Small Surface Mount Package • Lead Free/RoHS Compliant | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 |   | |
2N7002DW | Field Effect Transistor - N-Channel, Enhancement Mode Features • Dual N−Channel MOSFET • Low On−Resistance • Low Gate Threshold Voltage • Low Input Capacitance • Fast Switching Speed • Low Input/Output Leakage • Ultra−Small Surface Mount Package • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant | ONSEMI 安森美半导体 | | |
2N7002DW | OptiMOS??Small-Signal-Transistor Features • Dual N-channel • Enhancement mode • Logic level • Avalanche rated • Fast switching • Qualified according to AEC Q101 • 100 lead-free; RoHS compliant • Halogen-free according to IEC61249-2-21 | Infineon 英飞凌 | | |
2N7002DW | 300m Amps, 60 Volts DUAL N-CHANNEL POWER MOSFET DESCRIPTION The UTC 2N7002DW uses advanced technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications. FEATURES * High Density Cell Design for Low RDS(ON) * Voltage Controlled Small Sign | UTC 友顺 | | |
2N7002DW | DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Description This MOSFET has been designed to minimize the on-state resistance (Rds(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. Features • Dual N-Channel MOSFET • Low On-Resistance • Low Gate Threshold Voltage • Lo | DIODES 美台半导体 | | |
2N7002DW | N-Channel MOSFET Features • Halogen free available upon request by adding suffix -HF • Epoxy meets UL 94 V-0 flammability rating • Moisture Sensitivity Level 1 • High density cell design for low RDS(ON) • Rugged and reliable • Voltage controlled small signal switch • Operating Junction Temperature: -55 to + | MCC | | |
2N7002DW | Dual N-Channel MOSFET Features: * Low On-Resistance : 7.5 Ω * Low Input Capacitance: 22PF * Low Out put Capacitance : 11PF * Low Threshole :1 .5V(TYE) * Fast Switching Speed : 11ns Mechanical Data: * Case: SOT-363, Molded Plastic * Case Material-UL Flammability Rating 94V-0 * Terminals: Solderable per MIL-STD- | WEITRON | | |
2N7002DW | Dual N-channel MOSFET Dual N-channel MOSFET FEATURE ● High density cell design for low RDS(ON) ● Voltage controlled small signal switch ● Rugged and reliable ● High saturation current capability APPLICATION ● Load Switch for Portable Devices ● DC/DC Converter | JIANGSU 长电科技 | | |
2N7002DW | Dual N-Channel MOSFET ■ Features ● VDS (V) = 60V ● ID = 115 mA (VGS = 10V) ● RDS(ON) | KEXIN 科信电子 | | |
2N7002DW | 60V N-Channel Enhancement Mode MOSFET DUAL N-CHANNEL ENHANCEMENT MODE MOSFETS This space-efficient device contains two electrically-isolated N-Channel enhancement-mode MOSFETs. It comes in a very small SOT-363 (SC70-6L) package. This device is ideal for portable applications where board space is at a premium. FEATURES ● Low On-Re | PANJIT 強茂 | | |
2N7002DW | Small Signal MOSFET Small Signal MOSFET 115 mAmps, 60 Volts N–Channel SOT–363 | SECOS 喜可士 | | |
2N7002DW | SOT-363 Plastic-Encapsulate MOSFETs Dual N-channel MOSFET FEATURE ● High density cell design for low RDS(ON) ● Voltage controlled small signal switch ● Rugged and reliable ● High saturation current capability APPLICATION ● Load Switch for Portable Devices ● DC/DC Converter | LUGUANG 鲁光电子 | | |
2N7002DW | Plastic-Encapsulate MOSFETs Dual N-channel MOSFET FEATURE ● High density cell design for low RDS(ON) ● Voltage controlled small signal switch ● Rugged and reliable ● High saturation current capability APPLICATION ● Load Switch for Portable Devices ● DC/DC Converter | SKTECHNOLGYSHIKE Electronics 时科广东时科微实业有限公司 | | |
2N7002DW | N-Channel MOSFET Features High density cell design for Low RDS（on） Voltage controlled small signal switch Rugged and reliable High saturation current capability ESD protected Load Switch for Portable Devices DC/DC Converter Applications | EVVOSEMI 翊欧 | | |
2N7002DW | Plastic-Encapsulated Transistors MOSFET (N-Channel) FEATURES Power dissipation PD : 0.2 W (Tamb=25℃) Collector current ID: 115 mA Collector-base voltage VDS: 60 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃ | TEL 东电电子 | | |
2N7002DW | N 沟道增强型场效应晶体管 60V，0.115A，2Ω | ONSEMI 安森美半导体 | | |
2N7002DW | DUAL N-CHANNEL ENHANCEMENT MODE MOSFET | DIODES 美台半导体 | | |
2N7002DW | N沟道 MOSFET | NCEPOWER 新洁能 | | |
2N7002DW | 60V N-Channel Enhancement Mode MOSFET 文件：164.84 Kbytes Page：5 Pages | PANJIT 強茂 | | |
2N7002DW | We declare that the material of product compliance with RoHS requirements and Halogen Free. 文件：622.91 Kbytes Page：6 Pages | LEIDITECH 雷卯电子 | | |
2N7002DW | N-Channel MOSFET 文件：190.89 Kbytes Page：2 Pages | MCC | | |
2N7002DW | DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR 文件：164.69 Kbytes Page：3 Pages | DIODES 美台半导体 | | |
2N7002DW | DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR 文件：89.71 Kbytes Page：4 Pages | DIODES 美台半导体 | | |
2N7002DW | DUAL N-CHANNEL ENHANCEMENT MODE MOSFET 文件：402.74 Kbytes Page：5 Pages | DIODES 美台半导体 | | |
2N7002DW | 300mA, 60V DUAL N-CHANNEL POWER MOSFET 文件：291.27 Kbytes Page：6 Pages | UTC 友顺 | | |
2N7002DW | Dual N-channel 文件：448.94 Kbytes Page：9 Pages | Infineon 英飞凌 | | |
N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET FEATURES * 60 Volt VCEO | Zetex | | ||
N-Channel Enhancement Mode Field Effect Transistor Description These N-channel enhancement mode field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. These products have been designed to minimize on-state resistance while providing rugged, reliable, and fast switching performance. They can be used | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | | ||
N-Channel 60-V (D-S) MOSFET FEATURES ● Low On-Resistance: 2.5 Ω ● Low Threshold: 2.1 V ● Low Input Capacitance: 22 pF ● Fast Switching Speed: 7 ns ● Low Input and Output Leakage BENEFITS ● Low Offset Voltage ● Low-Voltage Operation ● Easily Driven Without Buffer ● High-Speed Circuits ● Low Error Voltage APPLICATI | VishayVishay Siliconix 威世科技 | | ||
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Description • N-channel enhancement mode field effect transistor, designed for high speed pulsed amplifier and driver applications, which is manufactored by the N-Channel DMOS process. Features • High density cell design for low RDS(ON). • Voltage controlled small signal switching. • Rugged a | PANJIT 強茂 | | ||
N-Channel Enhancement-Mode Vertical DMOS FETs General Description The Supertex 2N7002 is an enhancement-mode (normally off) transistor that utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors, and the h | SUTEX | | ||
115 mAmps,60 Volts N–Channel SOT-363 • We declare that the material of product are Halogen Free and compliance with RoHS requirements. • ESD Protected:1000V • Pb-Free package is available RoHS product for packing code suffix G Halogen free product for packing code suffix H | WILLASWILLAS ELECTRONIC CORP 威伦威伦电子股份有限公司 | | ||
DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Features • Dual N-Channel MOSFET • Low On-Resistance • Low Gate Threshold Voltage • Low Input Capacitance • Fast Switching Speed • Low Input/Output Leakage • Ultra-Small Surface Mount Package • Available in Lead Free/RoHS Compliant Version (Note 2) | DIODES 美台半导体 | | ||
DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Description This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)), yet maintain superior switching performance, making it ideal for high-efficiency power management applications. Features • Dual N-Channel MOSFET • Low On-Resistance • Low Gate Threshold Voltage | DIODES 美台半导体 | | ||
DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Description This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)), yet maintain superior switching performance, making it ideal for high-efficiency power management applications. Features • Dual N-Channel MOSFET • Low On-Resistance • Low Gate Threshold Voltage | DIODES 美台半导体 | | ||
DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Description This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)), yet maintain superior switching performance, making it ideal for high-efficiency power management applications. Features • Dual N-Channel MOSFET • Low On-Resistance • Low Gate Threshold Voltage | DIODES 美台半导体 | | ||
DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Description This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)), yet maintain superior switching performance, making it ideal for high-efficiency power management applications. Features • Dual N-Channel MOSFET • Low On-Resistance • Low Gate Threshold Voltage | DIODES 美台半导体 | | ||
DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Description This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)), yet maintain superior switching performance, making it ideal for high-efficiency power management applications. Features • Dual N-Channel MOSFET • Low On-Resistance • Low Gate Threshold Voltage | DIODES 美台半导体 | | ||
300m Amps, 60 Volts DUAL N-CHANNEL POWER MOSFET DESCRIPTION The UTC 2N7002DW uses advanced technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications. FEATURES * High Density Cell Design for Low RDS(ON) * Voltage Controlled Small Sign | UTC 友顺 | | ||
OptiMOS??Small-Signal-Transistor Features • Dual N-channel • Enhancement mode • Logic level • Avalanche rated • Fast switching • Qualified according to AEC Q101 • 100 lead-free; RoHS compliant • Halogen-free according to IEC61249-2-21 | Infineon 英飞凌 | | ||
MOSFET Features - Voltage controlled small signal switch. - Low input capacitance. - Fast switching speed. - Low input / output leakage. | COMCHIP 典琦 | | ||
DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Features Dual N-Channel MOSFET Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage ESD Protected Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) For automotive applicati | DIODES 美台半导体 | | ||
DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Features Dual N-Channel MOSFET Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage ESD Protected Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) For automotive applicati | DIODES 美台半导体 | | ||
DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Features Dual N-Channel MOSFET Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage ESD Protected Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) For automotive applicati | DIODES 美台半导体 | | ||
DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Features Dual N-Channel MOSFET Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Small Surface Mount Package ESD Protected up to 2kV Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (No | DIODES 美台半导体 | | ||
DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Features Dual N-Channel MOSFET Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Small Surface Mount Package ESD Protected up to 2kV Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (No | DIODES 美台半导体 | | ||
DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Features Dual N-Channel MOSFET Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Small Surface Mount Package ESD Protected up to 2kV Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (No | DIODES 美台半导体 | | ||
Dual N-Channel MOSFET Features • High Density Cell Design For Low RDS(ON) • Voltage Controlled Small Signal Switch • Epoxy Meets UL 94 V-0 Flammability Rating • Moisture Sensitivity Level 1 • Halogen Free Available Upon Request By Adding Suffix -HF • Lead Free Finish/RoHS Compliant (P Suffix Designates RoHS C | MCC | | ||
300m Amps, 60 Volts DUAL N-CHANNEL POWER MOSFET DESCRIPTION The UTC 2N7002DW uses advanced technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications. FEATURES * High Density Cell Design for Low RDS(ON) * Voltage Controlled Small Sign | UTC 友顺 | | ||
DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Features Dual N-Channel MOSFET Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Ultra-Small Surface Mount Package Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) The | DIODES 美台半导体 | | ||
DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Features Dual N-Channel MOSFET Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Ultra-Small Surface Mount Package Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) The | DIODES 美台半导体 | | ||
DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Features Dual N-Channel MOSFET Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Ultra-Small Surface Mount Package Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) The | DIODES 美台半导体 | | ||
DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Features Low On-Resistance Low Input Capacitance Fast Switching Speed Low Input/Output Leakage ESD Protected Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) For automotive applications requiring specific change control Applicatio | DIODES 美台半导体 | | ||
DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Features Low On-Resistance Low Input Capacitance Fast Switching Speed Low Input/Output Leakage ESD Protected Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) For automotive applications requiring specific change control Applicatio | DIODES 美台半导体 | | ||
N-Channel MOSFET Features • Halogen free available upon request by adding suffix -HF • Epoxy meets UL 94 V-0 flammability rating • Moisture Sensitivity Level 1 • High density cell design for low RDS(ON) • Rugged and reliable • Voltage controlled small signal switch • Operating Junction Temperature: -55 to + | MCC | | ||
DUAL N-CHANNEL ENHANCEMENT MODE MOSFETS 文件：112.24 Kbytes Page：4 Pages | PANJIT 強茂 | | ||
60V N-Channel Enhancement Mode MOSFET 文件：176.96 Kbytes Page：5 Pages | PANJIT 強茂 | | ||
60V N-Channel Enhancement Mode MOSFET 文件：164.84 Kbytes Page：5 Pages | PANJIT 強茂 | | ||
DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR 文件：164.69 Kbytes Page：3 Pages | DIODES 美台半导体 | | ||
DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR 文件：89.71 Kbytes Page：4 Pages | DIODES 美台半导体 | |
2N7002DW产品属性
- 类型
描述
- 型号
2N7002DW
- 功能描述
MOSFET N-Chan Enhancement Mode Field Effect
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS（导通）
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
Cj江苏长电 |
23+ |
SOT363 |
50000 |
全新原装正品现货,支持订货 |
|||
DIODES/美台 |
23+ |
SOT-363 |
50000 |
全新原装正品现货,支持订货 |
|||
DIODES |
16+ |
4594 |
原装正品供应B |
||||
ON(安森美) |
24+ |
标准封装 |
7368 |
全新原装正品/价格优惠/质量保障 |
|||
DIODES |
DIODES |
18+ |
400000 |
原装现货有上库存就有货全网最低假一赔万 |
|||
NA |
23+ |
NA |
26094 |
10年以上分销经验原装进口正品,做服务型企业 |
|||
ON(安森美) |
23+ |
14363 |
公司只做原装正品,假一赔十 |
||||
INFINEON/英飞凌 |
23+ |
SOT-363 |
100586 |
全新原厂原装正品现货,可提供技术支持、样品免费! |
|||
DIODES |
14 |
SOT363 |
6000 |
绝对原装自己现货 |
|||
24+ |
SOT-23 |
20000 |
全新原厂原装，进口正品现货，正规渠道可含税！！ |
2N7002DW芯片相关品牌
2N7002DW规格书下载地址
2N7002DW参数引脚图相关
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- 2N7002_
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- 2N7002,215
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- 2N7000K
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- 2N7000
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- 2N699
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- 2N6989
- 2N6988
2N7002DW数据表相关新闻
2N7002A-7原装现货放心询
2N7002A-7原装现货放心询
2025-7-12N7002HWX
2N7002HWX
2024-1-22N7002G-SOT23.3R-TG_UTC代理商
2N7002G-SOT23.3R-TG_UTC代理商
2023-2-62N7002ET1G
2N7002ET1G
2022-5-242N7002 7002
2N7002 7002
2021-10-192N7002 CJ/长电 SOT-23 支持原装长电订货型号，欢迎咨询！
2N7002 CJ/长电 SOT-23
2021-5-19
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