2N7002DW价格

参考价格:¥0.1950

型号:2N7002DW 品牌:FAIRCHILD 备注:这里有2N7002DW多少钱,2024年最近7天走势,今日出价,今日竞价,2N7002DW批发/采购报价,2N7002DW行情走势销售排行榜,2N7002DW报价。
型号 功能描述 生产厂家&企业 LOGO 操作
2N7002DW

DUALN-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR

Description ThisMOSFEThasbeendesignedtominimizetheon-stateresistance(Rds(ON))andyetmaintainsuperiorswitchingperformance,makingitidealforhighefficiencypowermanagementapplications. Features •DualN-ChannelMOSFET •LowOn-Resistance •LowGateThresholdVoltage •Lo

DIODESDiodes Incorporated

达尔科技

DIODES
2N7002DW

DualN-ChannelMOSFET

Features: *LowOn-Resistance:7.5Ω *LowInputCapacitance:22PF *LowOutputCapacitance:11PF *LowThreshole:1.5V(TYE) *FastSwitchingSpeed:11ns MechanicalData: *Case:SOT-363,MoldedPlastic *CaseMaterial-ULFlammabilityRating94V-0 *Terminals:SolderableperMIL-STD-

WEITRONWEITRON

威堂電子科技

WEITRON
2N7002DW

Plastic-EncapsulatedTransistors

MOSFET(N-Channel) FEATURES Powerdissipation PD:0.2W(Tamb=25℃) Collectorcurrent ID:115mA Collector-basevoltage VDS:60V Operatingandstoragejunctiontemperaturerange TJ,Tstg:-55℃to+150℃

TEL

TRANSYS Electronics Limited

TEL
2N7002DW

60VN-ChannelEnhancementModeMOSFET

DUALN-CHANNELENHANCEMENTMODEMOSFETS Thisspace-efficientdevicecontainstwoelectrically-isolatedN-Channelenhancement-modeMOSFETs.ItcomesinaverysmallSOT-363(SC70-6L)package.Thisdeviceisidealforportableapplicationswhereboardspaceisatapremium. FEATURES ●LowOn-Re

PANJITPANJIT International Inc.

强茂強茂股份有限公司

PANJIT
2N7002DW

N-ChannelEnhancementModeFieldEffectTransistor

Features •DualN-ChannelMOSFET •LowOn-Resistance •LowGateThresholdVoltage •LowInputCapacitance •FastSwitchingSpeed •LowInput/OutputLeakage •Ultra-SmallSurfaceMountPackage •LeadFree/RoHSCompliant

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fairchild
2N7002DW

OptiMOS??Small-Signal-Transistor

Features •DualN-channel •Enhancementmode •Logiclevel •Avalancherated •Fastswitching •QualifiedaccordingtoAECQ101 •100lead-free;RoHScompliant •Halogen-freeaccordingtoIEC61249-2-21

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

Infineon
2N7002DW

SmallSignalMOSFET

SmallSignalMOSFET115mAmps,60Volts N–ChannelSOT–363

SECOS

SeCoS Halbleitertechnologie GmbH

SECOS
2N7002DW

300mAmps,60VoltsDUALN-CHANNELPOWERMOSFET

DESCRIPTION TheUTC2N7002DWusesadvancedtechnologytoprovideexcellentRDS(ON),lowgatechargeandoperationwithlowgatevoltages.ThisdeviceissuitableforuseasaloadswitchorinPWMapplications. FEATURES *HighDensityCellDesignforLowRDS(ON) *VoltageControlledSmallSign

UTCYoushun Technology Co., Ltd

友顺友顺科技股份有限公司

UTC
2N7002DW

N-ChannelMOSFET

Features •Halogenfreeavailableuponrequestbyaddingsuffix-HF •EpoxymeetsUL94V-0flammabilityrating •MoistureSensitivityLevel1 •HighdensitycelldesignforlowRDS(ON) •Ruggedandreliable •Voltagecontrolledsmallsignalswitch •OperatingJunctionTemperature:-55to+

MCCMicro Commercial Components

美微科美微科半导体公司

MCC
2N7002DW

SOT-363Plastic-EncapsulateMOSFETs

DualN-channelMOSFET FEATURE ●HighdensitycelldesignforlowRDS(ON) ●Voltagecontrolledsmallsignalswitch ●Ruggedandreliable ●Highsaturationcurrentcapability APPLICATION ●LoadSwitchforPortableDevices ●DC/DCConverter

LUGUANGShenzhen Luguang Electronic Technology Co., Ltd

鲁光电子深圳市鲁光电子科技有限公司

LUGUANG
2N7002DW

DualN-ChannelMOSFET

■Features ●VDS(V)=60V ●ID=115mA(VGS=10V) ●RDS(ON)

KEXINGUANGDONG KEXIN INDUSTRIAL CO.,LTD

科信电子广东科信实业有限公司

KEXIN
2N7002DW

DualN-channelMOSFET

DualN-channelMOSFET FEATURE ●HighdensitycelldesignforlowRDS(ON) ●Voltagecontrolledsmallsignalswitch ●Ruggedandreliable ●Highsaturationcurrentcapability APPLICATION ●LoadSwitchforPortableDevices ●DC/DCConverter

JIANGSU

Jiangsu Changjiang Electronics Technology Co., Ltd

JIANGSU
2N7002DW

Plastic-EncapsulateMOSFETs

DualN-channelMOSFET FEATURE ●HighdensitycelldesignforlowRDS(ON) ●Voltagecontrolledsmallsignalswitch ●Ruggedandreliable ●Highsaturationcurrentcapability APPLICATION ●LoadSwitchforPortableDevices ●DC/DCConverter

SKTECHNOLGYSHIKE Electronics

時科广东時科微实业有限公司

SKTECHNOLGY
2N7002DW

FieldEffectTransistor-N-Channel,EnhancementMode

Features •DualN−ChannelMOSFET •LowOn−Resistance •LowGateThresholdVoltage •LowInputCapacitance •FastSwitchingSpeed •LowInput/OutputLeakage •Ultra−SmallSurfaceMountPackage •TheseDevicesarePb−Free,HalogenFree/BFRFreeandareRoHSCompliant

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI
2N7002DW

300mA,60VDUALN-CHANNELPOWERMOSFET

文件:291.27 Kbytes Page:6 Pages

UTCYoushun Technology Co., Ltd

友顺友顺科技股份有限公司

UTC
2N7002DW

WedeclarethatthematerialofproductcompliancewithRoHSrequirementsandHalogenFree.

文件:622.91 Kbytes Page:6 Pages

LEIDITECHShanghai Leiditech Electronic Technology Co., Ltd

雷卯电子上海雷卯电子科技有限公司

LEIDITECH
2N7002DW

DualN-channel

文件:448.94 Kbytes Page:9 Pages

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

Infineon
2N7002DW

DUALN-CHANNELENHANCEMENTMODEMOSFET

文件:402.74 Kbytes Page:5 Pages

DIODESDiodes Incorporated

达尔科技

DIODES
2N7002DW

DUALN-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR

文件:89.71 Kbytes Page:4 Pages

DIODESDiodes Incorporated

达尔科技

DIODES
2N7002DW

N-ChannelMOSFET

文件:190.89 Kbytes Page:2 Pages

MCCMicro Commercial Components

美微科美微科半导体公司

MCC
2N7002DW

60VN-ChannelEnhancementModeMOSFET

文件:164.84 Kbytes Page:5 Pages

PANJITPANJIT International Inc.

强茂強茂股份有限公司

PANJIT
2N7002DW

DUALN-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR

文件:164.69 Kbytes Page:3 Pages

DIODESDiodes Incorporated

达尔科技

DIODES

N-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR

Description •N-channelenhancementmodefieldeffecttransistor,designedforhighspeedpulsedamplifieranddriverapplications,whichismanufactoredbytheN-ChannelDMOSprocess. Features •HighdensitycelldesignforlowRDS(ON). •Voltagecontrolledsmallsignalswitching. •Ruggeda

PANJITPANJIT International Inc.

强茂強茂股份有限公司

PANJIT

N-ChannelEnhancement-ModeVerticalDMOSFETs

GeneralDescription TheSupertex2N7002isanenhancement-mode(normallyoff)transistorthatutilizesaverticalDMOSstructureandSupertex’swell-provensilicon-gatemanufacturingprocess.Thiscombinationproducesadevicewiththepowerhandlingcapabilitiesofbipolartransistors,andtheh

SUTEX

Supertex, Inc

SUTEX

N-CHANNELENHANCEMENTMODEVERTICALDMOSFET

FEATURES *60VoltVCEO

Zetex

Zetex Semiconductors

Zetex

N-Channel60-V(D-S)MOSFET

FEATURES ●LowOn-Resistance:2.5Ω ●LowThreshold:2.1V ●LowInputCapacitance:22pF ●FastSwitchingSpeed:7ns ●LowInputandOutputLeakage BENEFITS ●LowOffsetVoltage ●Low-VoltageOperation ●EasilyDrivenWithoutBuffer ●High-SpeedCircuits ●LowErrorVoltage APPLICATI

VishayVishay Siliconix

威世科技

Vishay

N-ChannelEnhancementModeFieldEffectTransistor

Description TheseN-channelenhancementmodefieldeffecttransistorsareproducedusingFairchildsproprietary,highcelldensity,DMOStechnology.Theseproductshavebeendesignedtominimizeon-stateresistancewhileprovidingrugged,reliable,andfastswitchingperformance.Theycanbeused

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fairchild

115mAmps,60Volts

N–ChannelSOT-363 •WedeclarethatthematerialofproductareHalogenFreeand compliancewithRoHSrequirements. •ESDProtected:1000V •Pb-Freepackageisavailable RoHSproductforpackingcodesuffixG HalogenfreeproductforpackingcodesuffixH

WILLASWILLAS electronics corp

威倫威倫电子股份有限公司

WILLAS

DUALN-CHANNELENHANCEMENTMODEMOSFET

Features •DualN-ChannelMOSFET •LowOn-Resistance •LowGateThresholdVoltage •LowInputCapacitance •FastSwitchingSpeed •LowInput/OutputLeakage •Ultra-SmallSurfaceMountPackage •AvailableinLeadFree/RoHSCompliantVersion(Note2)

DIODESDiodes Incorporated

达尔科技

DIODES

DUALN-CHANNELENHANCEMENTMODEMOSFET

Description ThisnewgenerationMOSFETisdesignedtominimizetheon-stateresistance(RDS(ON)),yetmaintainsuperiorswitchingperformance,makingitidealforhigh-efficiencypowermanagementapplications. Features •DualN-ChannelMOSFET •LowOn-Resistance •LowGateThresholdVoltage

DIODESDiodes Incorporated

达尔科技

DIODES

DUALN-CHANNELENHANCEMENTMODEMOSFET

Description ThisnewgenerationMOSFETisdesignedtominimizetheon-stateresistance(RDS(ON)),yetmaintainsuperiorswitchingperformance,makingitidealforhigh-efficiencypowermanagementapplications. Features •DualN-ChannelMOSFET •LowOn-Resistance •LowGateThresholdVoltage

DIODESDiodes Incorporated

达尔科技

DIODES

DUALN-CHANNELENHANCEMENTMODEMOSFET

Description ThisnewgenerationMOSFETisdesignedtominimizetheon-stateresistance(RDS(ON)),yetmaintainsuperiorswitchingperformance,makingitidealforhigh-efficiencypowermanagementapplications. Features •DualN-ChannelMOSFET •LowOn-Resistance •LowGateThresholdVoltage

DIODESDiodes Incorporated

达尔科技

DIODES

DUALN-CHANNELENHANCEMENTMODEMOSFET

Description ThisnewgenerationMOSFETisdesignedtominimizetheon-stateresistance(RDS(ON)),yetmaintainsuperiorswitchingperformance,makingitidealforhigh-efficiencypowermanagementapplications. Features •DualN-ChannelMOSFET •LowOn-Resistance •LowGateThresholdVoltage

DIODESDiodes Incorporated

达尔科技

DIODES

DUALN-CHANNELENHANCEMENTMODEMOSFET

Description ThisnewgenerationMOSFETisdesignedtominimizetheon-stateresistance(RDS(ON)),yetmaintainsuperiorswitchingperformance,makingitidealforhigh-efficiencypowermanagementapplications. Features •DualN-ChannelMOSFET •LowOn-Resistance •LowGateThresholdVoltage

DIODESDiodes Incorporated

达尔科技

DIODES

300mAmps,60VoltsDUALN-CHANNELPOWERMOSFET

DESCRIPTION TheUTC2N7002DWusesadvancedtechnologytoprovideexcellentRDS(ON),lowgatechargeandoperationwithlowgatevoltages.ThisdeviceissuitableforuseasaloadswitchorinPWMapplications. FEATURES *HighDensityCellDesignforLowRDS(ON) *VoltageControlledSmallSign

UTCYoushun Technology Co., Ltd

友顺友顺科技股份有限公司

UTC

OptiMOS??Small-Signal-Transistor

Features •DualN-channel •Enhancementmode •Logiclevel •Avalancherated •Fastswitching •QualifiedaccordingtoAECQ101 •100lead-free;RoHScompliant •Halogen-freeaccordingtoIEC61249-2-21

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

Infineon

DUALN-CHANNELENHANCEMENTMODEMOSFET

Features DualN-ChannelMOSFET LowOn-Resistance LowGateThresholdVoltage LowInputCapacitance FastSwitchingSpeed LowInput/OutputLeakage ESDProtected TotallyLead-Free&FullyRoHSCompliant(Notes1&2) HalogenandAntimonyFree.“Green”Device(Note3) Forautomotiveapplicati

DIODESDiodes Incorporated

达尔科技

DIODES

DUALN-CHANNELENHANCEMENTMODEMOSFET

Features DualN-ChannelMOSFET LowOn-Resistance LowGateThresholdVoltage LowInputCapacitance FastSwitchingSpeed LowInput/OutputLeakage ESDProtected TotallyLead-Free&FullyRoHSCompliant(Notes1&2) HalogenandAntimonyFree.“Green”Device(Note3) Forautomotiveapplicati

DIODESDiodes Incorporated

达尔科技

DIODES

DUALN-CHANNELENHANCEMENTMODEMOSFET

Features DualN-ChannelMOSFET LowOn-Resistance LowGateThresholdVoltage LowInputCapacitance FastSwitchingSpeed LowInput/OutputLeakage ESDProtected TotallyLead-Free&FullyRoHSCompliant(Notes1&2) HalogenandAntimonyFree.“Green”Device(Note3) Forautomotiveapplicati

DIODESDiodes Incorporated

达尔科技

DIODES

DUALN-CHANNELENHANCEMENTMODEMOSFET

Features DualN-ChannelMOSFET LowOn-Resistance LowGateThresholdVoltage LowInputCapacitance FastSwitchingSpeed SmallSurfaceMountPackage ESDProtectedupto2kV TotallyLead-Free&FullyRoHSCompliant(Notes1&2) HalogenandAntimonyFree.“Green”Device(No

DIODESDiodes Incorporated

达尔科技

DIODES

DUALN-CHANNELENHANCEMENTMODEMOSFET

Features DualN-ChannelMOSFET LowOn-Resistance LowGateThresholdVoltage LowInputCapacitance FastSwitchingSpeed SmallSurfaceMountPackage ESDProtectedupto2kV TotallyLead-Free&FullyRoHSCompliant(Notes1&2) HalogenandAntimonyFree.“Green”Device(No

DIODESDiodes Incorporated

达尔科技

DIODES

DUALN-CHANNELENHANCEMENTMODEMOSFET

Features DualN-ChannelMOSFET LowOn-Resistance LowGateThresholdVoltage LowInputCapacitance FastSwitchingSpeed SmallSurfaceMountPackage ESDProtectedupto2kV TotallyLead-Free&FullyRoHSCompliant(Notes1&2) HalogenandAntimonyFree.“Green”Device(No

DIODESDiodes Incorporated

达尔科技

DIODES

DualN-ChannelMOSFET

Features •HighDensityCellDesignForLowRDS(ON) •VoltageControlledSmallSignalSwitch •EpoxyMeetsUL94V-0FlammabilityRating •MoistureSensitivityLevel1 •HalogenFreeAvailableUponRequestByAddingSuffix-HF •LeadFreeFinish/RoHSCompliant(PSuffixDesignatesRoHS C

MCCMicro Commercial Components

美微科美微科半导体公司

MCC

300mAmps,60VoltsDUALN-CHANNELPOWERMOSFET

DESCRIPTION TheUTC2N7002DWusesadvancedtechnologytoprovideexcellentRDS(ON),lowgatechargeandoperationwithlowgatevoltages.ThisdeviceissuitableforuseasaloadswitchorinPWMapplications. FEATURES *HighDensityCellDesignforLowRDS(ON) *VoltageControlledSmallSign

UTCYoushun Technology Co., Ltd

友顺友顺科技股份有限公司

UTC

DUALN-CHANNELENHANCEMENTMODEMOSFET

Features DualN-ChannelMOSFET LowOn-Resistance LowGateThresholdVoltage LowInputCapacitance FastSwitchingSpeed LowInput/OutputLeakage Ultra-SmallSurfaceMountPackage TotallyLead-Free&FullyRoHSCompliant(Notes1&2) HalogenandAntimonyFree.“Green”Device(Note3) The

DIODESDiodes Incorporated

达尔科技

DIODES

DUALN-CHANNELENHANCEMENTMODEMOSFET

Features DualN-ChannelMOSFET LowOn-Resistance LowGateThresholdVoltage LowInputCapacitance FastSwitchingSpeed LowInput/OutputLeakage Ultra-SmallSurfaceMountPackage TotallyLead-Free&FullyRoHSCompliant(Notes1&2) HalogenandAntimonyFree.“Green”Device(Note3) The

DIODESDiodes Incorporated

达尔科技

DIODES

DUALN-CHANNELENHANCEMENTMODEMOSFET

Features DualN-ChannelMOSFET LowOn-Resistance LowGateThresholdVoltage LowInputCapacitance FastSwitchingSpeed LowInput/OutputLeakage Ultra-SmallSurfaceMountPackage TotallyLead-Free&FullyRoHSCompliant(Notes1&2) HalogenandAntimonyFree.“Green”Device(Note3) The

DIODESDiodes Incorporated

达尔科技

DIODES

DUALN-CHANNELENHANCEMENTMODEMOSFET

Features LowOn-Resistance LowInputCapacitance FastSwitchingSpeed LowInput/OutputLeakage ESDProtected TotallyLead-Free&FullyRoHSCompliant(Notes1&2) HalogenandAntimonyFree.“Green”Device(Note3) Forautomotiveapplicationsrequiringspecificchangecontrol Applicatio

DIODESDiodes Incorporated

达尔科技

DIODES

DUALN-CHANNELENHANCEMENTMODEMOSFET

Features LowOn-Resistance LowInputCapacitance FastSwitchingSpeed LowInput/OutputLeakage ESDProtected TotallyLead-Free&FullyRoHSCompliant(Notes1&2) HalogenandAntimonyFree.“Green”Device(Note3) Forautomotiveapplicationsrequiringspecificchangecontrol Applicatio

DIODESDiodes Incorporated

达尔科技

DIODES

N-ChannelMOSFET

Features •Halogenfreeavailableuponrequestbyaddingsuffix-HF •EpoxymeetsUL94V-0flammabilityrating •MoistureSensitivityLevel1 •HighdensitycelldesignforlowRDS(ON) •Ruggedandreliable •Voltagecontrolledsmallsignalswitch •OperatingJunctionTemperature:-55to+

MCCMicro Commercial Components

美微科美微科半导体公司

MCC

DUALN-CHANNELENHANCEMENTMODEMOSFETS

文件:112.24 Kbytes Page:4 Pages

PANJITPANJIT International Inc.

强茂強茂股份有限公司

PANJIT

60VN-ChannelEnhancementModeMOSFET

文件:176.96 Kbytes Page:5 Pages

PANJITPANJIT International Inc.

强茂強茂股份有限公司

PANJIT

60VN-ChannelEnhancementModeMOSFET

文件:164.84 Kbytes Page:5 Pages

PANJITPANJIT International Inc.

强茂強茂股份有限公司

PANJIT

DUALN-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR

文件:164.69 Kbytes Page:3 Pages

DIODESDiodes Incorporated

达尔科技

DIODES

DUALN-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR

文件:89.71 Kbytes Page:4 Pages

DIODESDiodes Incorporated

达尔科技

DIODES

N-ChannelMOSFET

文件:190.89 Kbytes Page:2 Pages

MCCMicro Commercial Components

美微科美微科半导体公司

MCC

300mA,60VDUALN-CHANNELPOWERMOSFET

文件:291.27 Kbytes Page:6 Pages

UTCYoushun Technology Co., Ltd

友顺友顺科技股份有限公司

UTC

60VN-ChannelEnhancementModeMOSFET

文件:155.8 Kbytes Page:5 Pages

PANJITPANJIT International Inc.

强茂強茂股份有限公司

PANJIT

DualN-channel

文件:448.94 Kbytes Page:9 Pages

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

Infineon

DUALN-CHANNELENHANCEMENTMODEMOSFET

文件:217.13 Kbytes Page:5 Pages

DIODESDiodes Incorporated

达尔科技

DIODES

2N7002DW产品属性

  • 类型

    描述

  • 型号

    2N7002DW

  • 功能描述

    MOSFET N-Chan Enhancement Mode Field Effect

  • RoHS

  • 制造商

    STMicroelectronics

  • 晶体管极性

    N-Channel

  • 汲极/源极击穿电压

    650 V

  • 闸/源击穿电压

    25 V

  • 漏极连续电流

    130 A 电阻汲极/源极

  • RDS(导通)

    0.014 Ohms

  • 配置

    Single

  • 安装风格

    Through Hole

  • 封装/箱体

    Max247

  • 封装

    Tube

更新时间:2024-4-26 8:08:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
DIODES/美台
22+
SOT363
800000
郑重承诺只做原装进口现货
FAIRCHILD/仙童
24+
SOT363
154708
明嘉莱只做原装正品现货
DIODES/美台
22+
NA
20000
原装正品支持实单
DIODES/美台
22+
SMD
500000
原厂渠道/找正品元器件就找宏桥达/实报实货/诚信第一/
DIODES
22+
SOT-363
3558
DIODES
17+
SOT-363
6000
原装正品老板王磊+13925678267
Diodes(美台)
2023+
N/A
4550
全新原装正品
DIODES
21+
SOT-363
5000
全新原装,支持实单,假一罚十,德创芯微
DIODES/美台
21+
SOT-363-6
4329
只做原装,假一罚十
INFINEON/英飞凌
23+
SOT-363
100586
全新原厂原装正品现货,可提供技术支持、样品免费!

2N7002DW芯片相关品牌

  • ANACHIP
  • BOTHHAND
  • EUROQUARTZ
  • Honeywell
  • MOLEX8
  • MPS
  • nichicon
  • nxp
  • POWERBOX
  • RECTRON
  • TAI-TECH
  • Winbond

2N7002DW数据表相关新闻