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| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
XM28C040 | 5 Volt, Byte Alterable E2PROM DESCRIPTION The XM28C040 is a high density 4 Megabit E2PROM comprised of four X28C010s mounted on a co-fired multilayered ceramic substrate. Individual components are 100 tested prior to assembly in module form and then 100 tested after assembly. TYPICAL FEATURES • High Density 4 Megabit (512K | Xicor Xicor Inc. |   | |
5 Volt, Byte Alterable E2PROM DESCRIPTION The XM28C040 is a high density 4 Megabit E2PROM comprised of four X28C010s mounted on a co-fired multilayered ceramic substrate. Individual components are 100 tested prior to assembly in module form and then 100 tested after assembly. TYPICAL FEATURES • High Density 4 Megabit (512K | Xicor Xicor Inc. | | ||
5 Volt, Byte Alterable E2PROM DESCRIPTION The XM28C040 is a high density 4 Megabit E2PROM comprised of four X28C010s mounted on a co-fired multilayered ceramic substrate. Individual components are 100 tested prior to assembly in module form and then 100 tested after assembly. TYPICAL FEATURES • High Density 4 Megabit (512K | Xicor Xicor Inc. | | ||
5 Volt, Byte Alterable E2PROM DESCRIPTION The XM28C040 is a high density 4 Megabit E2PROM comprised of four X28C010s mounted on a co-fired multilayered ceramic substrate. Individual components are 100 tested prior to assembly in module form and then 100 tested after assembly. TYPICAL FEATURES • High Density 4 Megabit (512K | Xicor Xicor Inc. | | ||
5 Volt, Byte Alterable E2PROM DESCRIPTION The XM28C040 is a high density 4 Megabit E2PROM comprised of four X28C010s mounted on a co-fired multilayered ceramic substrate. Individual components are 100 tested prior to assembly in module form and then 100 tested after assembly. TYPICAL FEATURES • High Density 4 Megabit (512K | Xicor Xicor Inc. | | ||
5 Volt, Byte Alterable E2PROM DESCRIPTION The XM28C040 is a high density 4 Megabit E2PROM comprised of four X28C010s mounted on a co-fired multilayered ceramic substrate. Individual components are 100 tested prior to assembly in module form and then 100 tested after assembly. TYPICAL FEATURES • High Density 4 Megabit (512K | Xicor Xicor Inc. | | ||
5 Volt, Byte Alterable E2PROM DESCRIPTION The XM28C040 is a high density 4 Megabit E2PROM comprised of four X28C010s mounted on a co-fired multilayered ceramic substrate. Individual components are 100 tested prior to assembly in module form and then 100 tested after assembly. TYPICAL FEATURES • High Density 4 Megabit (512K | Xicor Xicor Inc. | | ||
5 Volt, Byte Alterable E2PROM DESCRIPTION The XM28C040 is a high density 4 Megabit E2PROM comprised of four X28C010s mounted on a co-fired multilayered ceramic substrate. Individual components are 100 tested prior to assembly in module form and then 100 tested after assembly. TYPICAL FEATURES • High Density 4 Megabit (512K | Xicor Xicor Inc. | | ||
5 Volt, Byte Alterable E2PROM DESCRIPTION The XM28C040 is a high density 4 Megabit E2PROM comprised of four X28C010s mounted on a co-fired multilayered ceramic substrate. Individual components are 100 tested prior to assembly in module form and then 100 tested after assembly. TYPICAL FEATURES • High Density 4 Megabit (512K | Xicor Xicor Inc. | | ||
5 Volt, Byte Alterable E2PROM DESCRIPTION The XM28C040 is a high density 4 Megabit E2PROM comprised of four X28C010s mounted on a co-fired multilayered ceramic substrate. Individual components are 100 tested prior to assembly in module form and then 100 tested after assembly. TYPICAL FEATURES • High Density 4 Megabit (512K | Xicor Xicor Inc. | | ||
5 Volt, Byte Alterable E2PROM DESCRIPTION The XM28C040 is a high density 4 Megabit E2PROM comprised of four X28C010s mounted on a co-fired multilayered ceramic substrate. Individual components are 100 tested prior to assembly in module form and then 100 tested after assembly. TYPICAL FEATURES • High Density 4 Megabit (512K | Xicor Xicor Inc. | | ||
5 Volt, Byte Alterable E2PROM DESCRIPTION The XM28C040 is a high density 4 Megabit E2PROM comprised of four X28C010s mounted on a co-fired multilayered ceramic substrate. Individual components are 100 tested prior to assembly in module form and then 100 tested after assembly. TYPICAL FEATURES • High Density 4 Megabit (512K | Xicor Xicor Inc. | | ||
High Density 5 Volt Byte Alterable Nonvolatile Memory Array DESCRIPTION The XM28C040P is a high density CMOS byte alterable nonvolatile memory array constructed on a cofired ceramic substrate using Xicor’s 128K x 8 components in 32-pad leadless chip carriers. The Substrate is a 66-pin ceramic pin grid array. FEATURES • High Density Memory Module —1 | Xicor Xicor Inc. | | ||
High Density 5 Volt Byte Alterable Nonvolatile Memory Array DESCRIPTION The XM28C040P is a high density CMOS byte alterable nonvolatile memory array constructed on a cofired ceramic substrate using Xicor’s 128K x 8 components in 32-pad leadless chip carriers. The Substrate is a 66-pin ceramic pin grid array. FEATURES • High Density Memory Module —1 | Xicor Xicor Inc. | | ||
High Density 5 Volt Byte Alterable Nonvolatile Memory Array DESCRIPTION The XM28C040P is a high density CMOS byte alterable nonvolatile memory array constructed on a cofired ceramic substrate using Xicor’s 128K x 8 components in 32-pad leadless chip carriers. The Substrate is a 66-pin ceramic pin grid array. FEATURES • High Density Memory Module —1 | Xicor Xicor Inc. | | ||
High Density 5 Volt Byte Alterable Nonvolatile Memory Array DESCRIPTION The XM28C040P is a high density CMOS byte alterable nonvolatile memory array constructed on a cofired ceramic substrate using Xicor’s 128K x 8 components in 32-pad leadless chip carriers. The Substrate is a 66-pin ceramic pin grid array. FEATURES • High Density Memory Module —1 | Xicor Xicor Inc. | | ||
High Density 5 Volt Byte Alterable Nonvolatile Memory Array DESCRIPTION The XM28C040P is a high density CMOS byte alterable nonvolatile memory array constructed on a cofired ceramic substrate using Xicor’s 128K x 8 components in 32-pad leadless chip carriers. The Substrate is a 66-pin ceramic pin grid array. FEATURES • High Density Memory Module —1 | Xicor Xicor Inc. | | ||
High Density 5 Volt Byte Alterable Nonvolatile Memory Array DESCRIPTION The XM28C040P is a high density CMOS byte alterable nonvolatile memory array constructed on a cofired ceramic substrate using Xicor’s 128K x 8 components in 32-pad leadless chip carriers. The Substrate is a 66-pin ceramic pin grid array. FEATURES • High Density Memory Module —1 | Xicor Xicor Inc. | | ||
High Density 5 Volt Byte Alterable Nonvolatile Memory Array DESCRIPTION The XM28C040P is a high density CMOS byte alterable nonvolatile memory array constructed on a cofired ceramic substrate using Xicor’s 128K x 8 components in 32-pad leadless chip carriers. The Substrate is a 66-pin ceramic pin grid array. FEATURES • High Density Memory Module —1 | Xicor Xicor Inc. | | ||
High Density 5 Volt Byte Alterable Nonvolatile Memory Array DESCRIPTION The XM28C040P is a high density CMOS byte alterable nonvolatile memory array constructed on a cofired ceramic substrate using Xicor’s 128K x 8 components in 32-pad leadless chip carriers. The Substrate is a 66-pin ceramic pin grid array. FEATURES • High Density Memory Module —1 | Xicor Xicor Inc. | | ||
High Density 5 Volt Byte Alterable Nonvolatile Memory Array DESCRIPTION The XM28C040P is a high density CMOS byte alterable nonvolatile memory array constructed on a cofired ceramic substrate using Xicor’s 128K x 8 components in 32-pad leadless chip carriers. The Substrate is a 66-pin ceramic pin grid array. FEATURES • High Density Memory Module —1 | Xicor Xicor Inc. | | ||
High Density 5 Volt Byte Alterable Nonvolatile Memory Array DESCRIPTION The XM28C040P is a high density CMOS byte alterable nonvolatile memory array constructed on a cofired ceramic substrate using Xicor’s 128K x 8 components in 32-pad leadless chip carriers. The Substrate is a 66-pin ceramic pin grid array. FEATURES • High Density Memory Module —1 | Xicor Xicor Inc. | | ||
4-Megabit 512K x 8 Paged E2PROM Description The AT28C040 is a high-performance electrically erasable and programmable read only memory (E2PROM). Its 4 megabits of memory is organized as 524,288 words by 8 bits. Manufactured with Atmels advanced nonvolatile CMOS technology, the device offers access times to 200 ns with power dis | AtmelAtmel Corporation 爱特梅尔爱特梅尔公司 | | ||
Automatic Page Write Operation 文件：385.33 Kbytes Page：15 Pages | AtmelAtmel Corporation 爱特梅尔爱特梅尔公司 | | ||
4-Megabit (512K x 8) Paged Parallel EEPROMs 文件：475.92 Kbytes Page：16 Pages | AtmelAtmel Corporation 爱特梅尔爱特梅尔公司 | | ||
4-Megabit (512K x 8) Paged Parallel EEPROMs 文件：385.3 Kbytes Page：15 Pages | AtmelAtmel Corporation 爱特梅尔爱特梅尔公司 | |
XM28C040产品属性
- 类型
描述
- 型号
XM28C040
- 制造商
XICOR
- 制造商全称
Xicor Inc.
- 功能描述
5 Volt, Byte Alterable E2PROM
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
XICOR |
24+ |
CDIP32 |
600 |
只做自己库存 全新原装进口正品假一赔百 可开13%增 |
|||
OMRON/欧姆龙 |
2508+ |
/ |
320680 |
一级代理，原装现货 |
|||
XICOR |
24+ |
66800 |
原厂授权一级代理,专注军工、汽车、医疗、工业、新能源、电力！ |
||||
XICOR |
三年内 |
1983 |
只做原装正品 |
||||
AD |
DIP |
2230 |
只做进口原装!假一赔百!自己库存价优! |
||||
OMRON/欧姆龙 |
19+ |
DIP |
246716 |
原装现货 |
|||
XICOR |
24+ |
200 |
进口原装正品优势供应 |
||||
OMRON |
24+ |
con |
10000 |
查现货到京北通宇商城 |
|||
OMRON 欧姆龙 |
ROHS+ Original 元件 继电器 |
原封 原厂 |
10050 |
现货原装--电子元件更多数量咨询/样品批量支持 OMRO |
|||
XICOR |
23+ |
CDIP32 |
11200 |
原厂授权一级代理、全球订货优势渠道、可提供一站式BO |
XM28C040规格书下载地址
XM28C040参数引脚图相关
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DdatasheetPDF页码索引
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