位置：首页 > IC中文资料第11824页 > XM28C040
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
XM28C040 | 5 Volt, Byte Alterable E2PROM DESCRIPTION The XM28C040 is a high density 4 Megabit E2PROM comprised of four X28C010s mounted on a co-fired multilayered ceramic substrate. Individual components are 100 tested prior to assembly in module form and then 100 tested after assembly. TYPICAL FEATURES • High Density 4 Megabit (512K | Xicor Xicor Inc. |   | |
5 Volt, Byte Alterable E2PROM DESCRIPTION The XM28C040 is a high density 4 Megabit E2PROM comprised of four X28C010s mounted on a co-fired multilayered ceramic substrate. Individual components are 100 tested prior to assembly in module form and then 100 tested after assembly. TYPICAL FEATURES • High Density 4 Megabit (512K | Xicor Xicor Inc. | | ||
5 Volt, Byte Alterable E2PROM DESCRIPTION The XM28C040 is a high density 4 Megabit E2PROM comprised of four X28C010s mounted on a co-fired multilayered ceramic substrate. Individual components are 100 tested prior to assembly in module form and then 100 tested after assembly. TYPICAL FEATURES • High Density 4 Megabit (512K | Xicor Xicor Inc. | | ||
5 Volt, Byte Alterable E2PROM DESCRIPTION The XM28C040 is a high density 4 Megabit E2PROM comprised of four X28C010s mounted on a co-fired multilayered ceramic substrate. Individual components are 100 tested prior to assembly in module form and then 100 tested after assembly. TYPICAL FEATURES • High Density 4 Megabit (512K | Xicor Xicor Inc. | | ||
5 Volt, Byte Alterable E2PROM DESCRIPTION The XM28C040 is a high density 4 Megabit E2PROM comprised of four X28C010s mounted on a co-fired multilayered ceramic substrate. Individual components are 100 tested prior to assembly in module form and then 100 tested after assembly. TYPICAL FEATURES • High Density 4 Megabit (512K | Xicor Xicor Inc. | | ||
5 Volt, Byte Alterable E2PROM DESCRIPTION The XM28C040 is a high density 4 Megabit E2PROM comprised of four X28C010s mounted on a co-fired multilayered ceramic substrate. Individual components are 100 tested prior to assembly in module form and then 100 tested after assembly. TYPICAL FEATURES • High Density 4 Megabit (512K | Xicor Xicor Inc. | | ||
5 Volt, Byte Alterable E2PROM DESCRIPTION The XM28C040 is a high density 4 Megabit E2PROM comprised of four X28C010s mounted on a co-fired multilayered ceramic substrate. Individual components are 100 tested prior to assembly in module form and then 100 tested after assembly. TYPICAL FEATURES • High Density 4 Megabit (512K | Xicor Xicor Inc. | | ||
5 Volt, Byte Alterable E2PROM DESCRIPTION The XM28C040 is a high density 4 Megabit E2PROM comprised of four X28C010s mounted on a co-fired multilayered ceramic substrate. Individual components are 100 tested prior to assembly in module form and then 100 tested after assembly. TYPICAL FEATURES • High Density 4 Megabit (512K | Xicor Xicor Inc. | | ||
5 Volt, Byte Alterable E2PROM DESCRIPTION The XM28C040 is a high density 4 Megabit E2PROM comprised of four X28C010s mounted on a co-fired multilayered ceramic substrate. Individual components are 100 tested prior to assembly in module form and then 100 tested after assembly. TYPICAL FEATURES • High Density 4 Megabit (512K | Xicor Xicor Inc. | | ||
5 Volt, Byte Alterable E2PROM DESCRIPTION The XM28C040 is a high density 4 Megabit E2PROM comprised of four X28C010s mounted on a co-fired multilayered ceramic substrate. Individual components are 100 tested prior to assembly in module form and then 100 tested after assembly. TYPICAL FEATURES • High Density 4 Megabit (512K | Xicor Xicor Inc. | | ||
5 Volt, Byte Alterable E2PROM DESCRIPTION The XM28C040 is a high density 4 Megabit E2PROM comprised of four X28C010s mounted on a co-fired multilayered ceramic substrate. Individual components are 100 tested prior to assembly in module form and then 100 tested after assembly. TYPICAL FEATURES • High Density 4 Megabit (512K | Xicor Xicor Inc. | | ||
5 Volt, Byte Alterable E2PROM DESCRIPTION The XM28C040 is a high density 4 Megabit E2PROM comprised of four X28C010s mounted on a co-fired multilayered ceramic substrate. Individual components are 100 tested prior to assembly in module form and then 100 tested after assembly. TYPICAL FEATURES • High Density 4 Megabit (512K | Xicor Xicor Inc. | | ||
High Density 5 Volt Byte Alterable Nonvolatile Memory Array DESCRIPTION The XM28C040P is a high density CMOS byte alterable nonvolatile memory array constructed on a cofired ceramic substrate using Xicor’s 128K x 8 components in 32-pad leadless chip carriers. The Substrate is a 66-pin ceramic pin grid array. FEATURES • High Density Memory Module —1 | Xicor Xicor Inc. | | ||
High Density 5 Volt Byte Alterable Nonvolatile Memory Array DESCRIPTION The XM28C040P is a high density CMOS byte alterable nonvolatile memory array constructed on a cofired ceramic substrate using Xicor’s 128K x 8 components in 32-pad leadless chip carriers. The Substrate is a 66-pin ceramic pin grid array. FEATURES • High Density Memory Module —1 | Xicor Xicor Inc. | | ||
High Density 5 Volt Byte Alterable Nonvolatile Memory Array DESCRIPTION The XM28C040P is a high density CMOS byte alterable nonvolatile memory array constructed on a cofired ceramic substrate using Xicor’s 128K x 8 components in 32-pad leadless chip carriers. The Substrate is a 66-pin ceramic pin grid array. FEATURES • High Density Memory Module —1 | Xicor Xicor Inc. | | ||
High Density 5 Volt Byte Alterable Nonvolatile Memory Array DESCRIPTION The XM28C040P is a high density CMOS byte alterable nonvolatile memory array constructed on a cofired ceramic substrate using Xicor’s 128K x 8 components in 32-pad leadless chip carriers. The Substrate is a 66-pin ceramic pin grid array. FEATURES • High Density Memory Module —1 | Xicor Xicor Inc. | | ||
High Density 5 Volt Byte Alterable Nonvolatile Memory Array DESCRIPTION The XM28C040P is a high density CMOS byte alterable nonvolatile memory array constructed on a cofired ceramic substrate using Xicor’s 128K x 8 components in 32-pad leadless chip carriers. The Substrate is a 66-pin ceramic pin grid array. FEATURES • High Density Memory Module —1 | Xicor Xicor Inc. | | ||
High Density 5 Volt Byte Alterable Nonvolatile Memory Array DESCRIPTION The XM28C040P is a high density CMOS byte alterable nonvolatile memory array constructed on a cofired ceramic substrate using Xicor’s 128K x 8 components in 32-pad leadless chip carriers. The Substrate is a 66-pin ceramic pin grid array. FEATURES • High Density Memory Module —1 | Xicor Xicor Inc. | | ||
High Density 5 Volt Byte Alterable Nonvolatile Memory Array DESCRIPTION The XM28C040P is a high density CMOS byte alterable nonvolatile memory array constructed on a cofired ceramic substrate using Xicor’s 128K x 8 components in 32-pad leadless chip carriers. The Substrate is a 66-pin ceramic pin grid array. FEATURES • High Density Memory Module —1 | Xicor Xicor Inc. | | ||
High Density 5 Volt Byte Alterable Nonvolatile Memory Array DESCRIPTION The XM28C040P is a high density CMOS byte alterable nonvolatile memory array constructed on a cofired ceramic substrate using Xicor’s 128K x 8 components in 32-pad leadless chip carriers. The Substrate is a 66-pin ceramic pin grid array. FEATURES • High Density Memory Module —1 | Xicor Xicor Inc. | | ||
High Density 5 Volt Byte Alterable Nonvolatile Memory Array DESCRIPTION The XM28C040P is a high density CMOS byte alterable nonvolatile memory array constructed on a cofired ceramic substrate using Xicor’s 128K x 8 components in 32-pad leadless chip carriers. The Substrate is a 66-pin ceramic pin grid array. FEATURES • High Density Memory Module —1 | Xicor Xicor Inc. | | ||
High Density 5 Volt Byte Alterable Nonvolatile Memory Array DESCRIPTION The XM28C040P is a high density CMOS byte alterable nonvolatile memory array constructed on a cofired ceramic substrate using Xicor’s 128K x 8 components in 32-pad leadless chip carriers. The Substrate is a 66-pin ceramic pin grid array. FEATURES • High Density Memory Module —1 | Xicor Xicor Inc. | | ||
5 Volt, Byte Alterable E2PROM | RENESAS 瑞萨 | | ||
High Density 5 Volt Byte Alterable Nonvolatile Memory Array | RENESAS 瑞萨 | | ||
4-Megabit 512K x 8 Paged E2PROM Description The AT28C040 is a high-performance electrically erasable and programmable read only memory (E2PROM). Its 4 megabits of memory is organized as 524,288 words by 8 bits. Manufactured with Atmels advanced nonvolatile CMOS technology, the device offers access times to 200 ns with power dis | Atmel 爱特梅尔 | | ||
4-Megabit (512K x 8) Paged Parallel EEPROMs 文件：475.92 Kbytes Page：16 Pages | Atmel 爱特梅尔 | | ||
4-Megabit (512K x 8) Paged Parallel EEPROMs 文件：385.3 Kbytes Page：15 Pages | Atmel 爱特梅尔 | | ||
Automatic Page Write Operation 文件：385.33 Kbytes Page：15 Pages | Atmel 爱特梅尔 | |
XM28C040产品属性
- 类型
描述
- 型号
XM28C040
- 制造商
XICOR
- 制造商全称
Xicor Inc.
- 功能描述
5 Volt, Byte Alterable E2PROM
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
XICOR |
24+ |
CDIP32 |
600 |
只做自己库存 全新原装进口正品假一赔百 可开13%增 |
|||
OMRON 欧姆龙 |
ROHS+ Original 元件 继电器 |
原封 原厂 |
10050 |
现货原装--电子元件更多数量咨询/样品批量支持 OMRO |
|||
OMRON 欧姆龙 |
23+ |
原封 原厂 |
10050 |
现货原装--电子元件更多数量咨询/样品批量支持 OMRO |
|||
OMRON |
ROHS |
13352 |
一级代理 原装正品假一罚十价格优势长期供货 |
||||
XICOR |
QQ咨询 |
AUCDIP |
827 |
全新原装 研究所指定供货商 |
|||
xilinx |
22+ |
CDIP32 |
6800 |
||||
XICOR |
23+ |
CDIP32 |
11200 |
原厂授权一级代理、全球订货优势渠道、可提供一站式BO |
|||
NSC |
25+ |
SMD |
2978 |
100%全新原装公司现货供应!随时可发货 |
|||
OMRON/欧姆龙 |
2508+ |
/ |
320680 |
一级代理，原装现货 |
|||
XICOR |
22+ |
CDIP |
12245 |
现货,原厂原装假一罚十! |
XM28C040规格书下载地址
XM28C040参数引脚图相关
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