位置:首页 > IC中文资料第11262页 > AT28C040
型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
---|---|---|---|---|
AT28C040 | 4-Megabit 512K x 8 Paged E2PROM Description The AT28C040 is a high-performance electrically erasable and programmable read only memory (E2PROM). Its 4 megabits of memory is organized as 524,288 words by 8 bits. Manufactured with Atmels advanced nonvolatile CMOS technology, the device offers access times to 200 ns with power dis | Atmel 爱特梅尔 | ||
AT28C040 | 4-Megabit (512K x 8) Paged Parallel EEPROMs 文件:475.92 Kbytes Page:16 Pages | Atmel 爱特梅尔 | ||
AT28C040 | 4-Megabit (512K x 8) Paged Parallel EEPROMs 文件:385.3 Kbytes Page:15 Pages | Atmel 爱特梅尔 | ||
AT28C040 | Automatic Page Write Operation 文件:385.33 Kbytes Page:15 Pages | Atmel 爱特梅尔 | ||
AT28C040 | 4-Megabit (512K x 8) Paged Parallel EEPROMs | Microchip 微芯科技 | ||
4-Megabit 512K x 8 Paged E2PROM Description The AT28C040 is a high-performance electrically erasable and programmable read only memory (E2PROM). Its 4 megabits of memory is organized as 524,288 words by 8 bits. Manufactured with Atmels advanced nonvolatile CMOS technology, the device offers access times to 200 ns with power dis | Atmel 爱特梅尔 | |||
4-Megabit 512K x 8 Paged E2PROM Description The AT28C040 is a high-performance electrically erasable and programmable read only memory (E2PROM). Its 4 megabits of memory is organized as 524,288 words by 8 bits. Manufactured with Atmels advanced nonvolatile CMOS technology, the device offers access times to 200 ns with power dis | Atmel 爱特梅尔 | |||
4-Megabit 512K x 8 Paged E2PROM Description The AT28C040 is a high-performance electrically erasable and programmable read only memory (E2PROM). Its 4 megabits of memory is organized as 524,288 words by 8 bits. Manufactured with Atmels advanced nonvolatile CMOS technology, the device offers access times to 200 ns with power dis | Atmel 爱特梅尔 | |||
4-Megabit 512K x 8 Paged E2PROM Description The AT28C040 is a high-performance electrically erasable and programmable read only memory (E2PROM). Its 4 megabits of memory is organized as 524,288 words by 8 bits. Manufactured with Atmels advanced nonvolatile CMOS technology, the device offers access times to 200 ns with power dis | Atmel 爱特梅尔 | |||
4-Megabit 512K x 8 Paged E2PROM Description The AT28C040 is a high-performance electrically erasable and programmable read only memory (E2PROM). Its 4 megabits of memory is organized as 524,288 words by 8 bits. Manufactured with Atmels advanced nonvolatile CMOS technology, the device offers access times to 200 ns with power dis | Atmel 爱特梅尔 | |||
4-Megabit 512K x 8 Paged E2PROM Description The AT28C040 is a high-performance electrically erasable and programmable read only memory (E2PROM). Its 4 megabits of memory is organized as 524,288 words by 8 bits. Manufactured with Atmels advanced nonvolatile CMOS technology, the device offers access times to 200 ns with power dis | Atmel 爱特梅尔 | |||
4-Megabit 512K x 8 Paged E2PROM Description The AT28C040 is a high-performance electrically erasable and programmable read only memory (E2PROM). Its 4 megabits of memory is organized as 524,288 words by 8 bits. Manufactured with Atmels advanced nonvolatile CMOS technology, the device offers access times to 200 ns with power dis | Atmel 爱特梅尔 | |||
4-Megabit 512K x 8 Paged E2PROM Description The AT28C040 is a high-performance electrically erasable and programmable read only memory (E2PROM). Its 4 megabits of memory is organized as 524,288 words by 8 bits. Manufactured with Atmels advanced nonvolatile CMOS technology, the device offers access times to 200 ns with power dis | Atmel 爱特梅尔 | |||
4-Megabit 512K x 8 Paged E2PROM Description The AT28C040 is a high-performance electrically erasable and programmable read only memory (E2PROM). Its 4 megabits of memory is organized as 524,288 words by 8 bits. Manufactured with Atmels advanced nonvolatile CMOS technology, the device offers access times to 200 ns with power dis | Atmel 爱特梅尔 | |||
4-Megabit 512K x 8 Paged E2PROM Description The AT28C040 is a high-performance electrically erasable and programmable read only memory (E2PROM). Its 4 megabits of memory is organized as 524,288 words by 8 bits. Manufactured with Atmels advanced nonvolatile CMOS technology, the device offers access times to 200 ns with power dis | Atmel 爱特梅尔 | |||
4-Megabit 512K x 8 Paged E2PROM Description The AT28C040 is a high-performance electrically erasable and programmable read only memory (E2PROM). Its 4 megabits of memory is organized as 524,288 words by 8 bits. Manufactured with Atmels advanced nonvolatile CMOS technology, the device offers access times to 200 ns with power dis | Atmel 爱特梅尔 | |||
4-Megabit 512K x 8 Paged E2PROM Description The AT28C040 is a high-performance electrically erasable and programmable read only memory (E2PROM). Its 4 megabits of memory is organized as 524,288 words by 8 bits. Manufactured with Atmels advanced nonvolatile CMOS technology, the device offers access times to 200 ns with power dis | Atmel 爱特梅尔 | |||
4-Megabit 512K x 8 Paged E2PROM Description The AT28C040 is a high-performance electrically erasable and programmable read only memory (E2PROM). Its 4 megabits of memory is organized as 524,288 words by 8 bits. Manufactured with Atmels advanced nonvolatile CMOS technology, the device offers access times to 200 ns with power dis | Atmel 爱特梅尔 | |||
4-Megabit 512K x 8 Paged E2PROM Description The AT28C040 is a high-performance electrically erasable and programmable read only memory (E2PROM). Its 4 megabits of memory is organized as 524,288 words by 8 bits. Manufactured with Atmels advanced nonvolatile CMOS technology, the device offers access times to 200 ns with power dis | Atmel 爱特梅尔 | |||
4-Megabit 512K x 8 Paged E2PROM Description The AT28C040 is a high-performance electrically erasable and programmable read only memory (E2PROM). Its 4 megabits of memory is organized as 524,288 words by 8 bits. Manufactured with Atmels advanced nonvolatile CMOS technology, the device offers access times to 200 ns with power dis | Atmel 爱特梅尔 | |||
4-Megabit 512K x 8 Paged E2PROM Description The AT28C040 is a high-performance electrically erasable and programmable read only memory (E2PROM). Its 4 megabits of memory is organized as 524,288 words by 8 bits. Manufactured with Atmels advanced nonvolatile CMOS technology, the device offers access times to 200 ns with power dis | Atmel 爱特梅尔 | |||
4-Megabit 512K x 8 Paged E2PROM Description The AT28C040 is a high-performance electrically erasable and programmable read only memory (E2PROM). Its 4 megabits of memory is organized as 524,288 words by 8 bits. Manufactured with Atmels advanced nonvolatile CMOS technology, the device offers access times to 200 ns with power dis | Atmel 爱特梅尔 | |||
4-Megabit 512K x 8 Paged E2PROM Description The AT28C040 is a high-performance electrically erasable and programmable read only memory (E2PROM). Its 4 megabits of memory is organized as 524,288 words by 8 bits. Manufactured with Atmels advanced nonvolatile CMOS technology, the device offers access times to 200 ns with power dis | Atmel 爱特梅尔 | |||
4-Megabit 512K x 8 Paged E2PROM Description The AT28C040 is a high-performance electrically erasable and programmable read only memory (E2PROM). Its 4 megabits of memory is organized as 524,288 words by 8 bits. Manufactured with Atmels advanced nonvolatile CMOS technology, the device offers access times to 200 ns with power dis | Atmel 爱特梅尔 | |||
4-Megabit 512K x 8 Paged E2PROM Description The AT28C040 is a high-performance electrically erasable and programmable read only memory (E2PROM). Its 4 megabits of memory is organized as 524,288 words by 8 bits. Manufactured with Atmels advanced nonvolatile CMOS technology, the device offers access times to 200 ns with power dis | Atmel 爱特梅尔 | |||
4-Megabit (512K x 8) Paged Parallel EEPROMs 文件:475.92 Kbytes Page:16 Pages | Atmel 爱特梅尔 | |||
4-Megabit (512K x 8) Paged Parallel EEPROMs 文件:385.3 Kbytes Page:15 Pages | Atmel 爱特梅尔 | |||
Automatic Page Write Operation 文件:385.33 Kbytes Page:15 Pages | Atmel 爱特梅尔 | |||
封装/外壳:32-CFlatPack 包装:管件 描述:IC EEPROM 4MBIT PAR 32FLATPACK 集成电路(IC) 存储器 | Microchip 微芯科技 | |||
4-Megabit (512K x 8) Paged Parallel EEPROMs 文件:475.92 Kbytes Page:16 Pages | Atmel 爱特梅尔 | |||
4-Megabit (512K x 8) Paged Parallel EEPROMs 文件:385.3 Kbytes Page:15 Pages | Atmel 爱特梅尔 | |||
4-Megabit (512K x 8) Paged Parallel EEPROMs 文件:475.92 Kbytes Page:16 Pages | Atmel 爱特梅尔 | |||
4-Megabit (512K x 8) Paged Parallel EEPROMs 文件:385.3 Kbytes Page:15 Pages | Atmel 爱特梅尔 | |||
封装/外壳:44-CLCC 包装:管件 描述:IC EEPROM 4MBIT PARALLEL 44CLCC 集成电路(IC) 存储器 | Microchip 微芯科技 | |||
4-Megabit (512K x 8) Paged Parallel EEPROMs 文件:385.3 Kbytes Page:15 Pages | Atmel 爱特梅尔 | |||
4-Megabit (512K x 8) Paged Parallel EEPROMs 文件:475.92 Kbytes Page:16 Pages | Atmel 爱特梅尔 | |||
4-Megabit (512K x 8) Paged Parallel EEPROMs 文件:475.92 Kbytes Page:16 Pages | Atmel 爱特梅尔 | |||
4-Megabit (512K x 8) Paged Parallel EEPROMs 文件:385.3 Kbytes Page:15 Pages | Atmel 爱特梅尔 | |||
4-Megabit (512K x 8) Paged Parallel EEPROMs 文件:475.92 Kbytes Page:16 Pages | Atmel 爱特梅尔 | |||
5 Volt, Byte Alterable E2PROM DESCRIPTION The XM28C040 is a high density 4 Megabit E2PROM comprised of four X28C010s mounted on a co-fired multilayered ceramic substrate. Individual components are 100 tested prior to assembly in module form and then 100 tested after assembly. TYPICAL FEATURES • High Density 4 Megabit (512K | Xicor Xicor Inc. |
AT28C040产品属性
- 类型
描述
- 型号
AT28C040
- 制造商
ATMEL
- 制造商全称
ATMEL Corporation
- 功能描述
4-Megabit(512K x 8) Paged Parallel EEPROMs
IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
ATMEL |
25+ |
DIP |
18000 |
原厂直接发货进口原装 |
|||
Microchip Technology |
25+ |
44-CLCC |
9350 |
独立分销商 公司只做原装 诚心经营 免费试样正品保证 |
|||
AT |
25+23+ |
DIP |
17241 |
绝对原装正品全新进口深圳现货 |
|||
Microchip |
22+ |
32CDIP Side Brazed |
9000 |
原厂渠道,现货配单 |
|||
ATMEL |
24+ |
金块 |
6423 |
公司原厂原装现货假一罚十!特价出售!强势库存! |
|||
AT |
22+ |
DIP |
30000 |
十七年VIP会员,诚信经营,一手货源,原装正品可零售! |
|||
AT |
24+ |
DIP |
15 |
||||
ATMEL |
2025+ |
TSSOP |
3872 |
全新原厂原装产品、公司现货销售 |
|||
ATMEL/爱特梅尔 |
22+ |
AUCSOP |
12245 |
现货,原厂原装假一罚十! |
|||
ATMEL |
25+ |
LCC44 |
1560 |
原装正品!公司现货! |
AT28C040芯片相关品牌
AT28C040规格书下载地址
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2019-11-29
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