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型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
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AT28C040 | 4-Megabit 512K x 8 Paged E2PROM Description The AT28C040 is a high-performance electrically erasable and programmable read only memory (E2PROM). Its 4 megabits of memory is organized as 524,288 words by 8 bits. Manufactured with Atmels advanced nonvolatile CMOS technology, the device offers access times to 200 ns with power dis | AtmelAtmel Corporation 爱特梅尔爱特梅尔公司 | ||
AT28C040 | 4-Megabit (512K x 8) Paged Parallel EEPROMs 文件:475.92 Kbytes Page:16 Pages | AtmelAtmel Corporation 爱特梅尔爱特梅尔公司 | ||
AT28C040 | 4-Megabit (512K x 8) Paged Parallel EEPROMs 文件:385.3 Kbytes Page:15 Pages | AtmelAtmel Corporation 爱特梅尔爱特梅尔公司 | ||
AT28C040 | Automatic Page Write Operation 文件:385.33 Kbytes Page:15 Pages | AtmelAtmel Corporation 爱特梅尔爱特梅尔公司 | ||
4-Megabit 512K x 8 Paged E2PROM Description The AT28C040 is a high-performance electrically erasable and programmable read only memory (E2PROM). Its 4 megabits of memory is organized as 524,288 words by 8 bits. Manufactured with Atmels advanced nonvolatile CMOS technology, the device offers access times to 200 ns with power dis | AtmelAtmel Corporation 爱特梅尔爱特梅尔公司 | |||
4-Megabit 512K x 8 Paged E2PROM Description The AT28C040 is a high-performance electrically erasable and programmable read only memory (E2PROM). Its 4 megabits of memory is organized as 524,288 words by 8 bits. Manufactured with Atmels advanced nonvolatile CMOS technology, the device offers access times to 200 ns with power dis | AtmelAtmel Corporation 爱特梅尔爱特梅尔公司 | |||
4-Megabit 512K x 8 Paged E2PROM Description The AT28C040 is a high-performance electrically erasable and programmable read only memory (E2PROM). Its 4 megabits of memory is organized as 524,288 words by 8 bits. Manufactured with Atmels advanced nonvolatile CMOS technology, the device offers access times to 200 ns with power dis | AtmelAtmel Corporation 爱特梅尔爱特梅尔公司 | |||
4-Megabit 512K x 8 Paged E2PROM Description The AT28C040 is a high-performance electrically erasable and programmable read only memory (E2PROM). Its 4 megabits of memory is organized as 524,288 words by 8 bits. Manufactured with Atmels advanced nonvolatile CMOS technology, the device offers access times to 200 ns with power dis | AtmelAtmel Corporation 爱特梅尔爱特梅尔公司 | |||
4-Megabit 512K x 8 Paged E2PROM Description The AT28C040 is a high-performance electrically erasable and programmable read only memory (E2PROM). Its 4 megabits of memory is organized as 524,288 words by 8 bits. Manufactured with Atmels advanced nonvolatile CMOS technology, the device offers access times to 200 ns with power dis | AtmelAtmel Corporation 爱特梅尔爱特梅尔公司 | |||
4-Megabit 512K x 8 Paged E2PROM Description The AT28C040 is a high-performance electrically erasable and programmable read only memory (E2PROM). Its 4 megabits of memory is organized as 524,288 words by 8 bits. Manufactured with Atmels advanced nonvolatile CMOS technology, the device offers access times to 200 ns with power dis | AtmelAtmel Corporation 爱特梅尔爱特梅尔公司 | |||
4-Megabit 512K x 8 Paged E2PROM Description The AT28C040 is a high-performance electrically erasable and programmable read only memory (E2PROM). Its 4 megabits of memory is organized as 524,288 words by 8 bits. Manufactured with Atmels advanced nonvolatile CMOS technology, the device offers access times to 200 ns with power dis | AtmelAtmel Corporation 爱特梅尔爱特梅尔公司 | |||
4-Megabit 512K x 8 Paged E2PROM Description The AT28C040 is a high-performance electrically erasable and programmable read only memory (E2PROM). Its 4 megabits of memory is organized as 524,288 words by 8 bits. Manufactured with Atmels advanced nonvolatile CMOS technology, the device offers access times to 200 ns with power dis | AtmelAtmel Corporation 爱特梅尔爱特梅尔公司 | |||
4-Megabit 512K x 8 Paged E2PROM Description The AT28C040 is a high-performance electrically erasable and programmable read only memory (E2PROM). Its 4 megabits of memory is organized as 524,288 words by 8 bits. Manufactured with Atmels advanced nonvolatile CMOS technology, the device offers access times to 200 ns with power dis | AtmelAtmel Corporation 爱特梅尔爱特梅尔公司 | |||
4-Megabit 512K x 8 Paged E2PROM Description The AT28C040 is a high-performance electrically erasable and programmable read only memory (E2PROM). Its 4 megabits of memory is organized as 524,288 words by 8 bits. Manufactured with Atmels advanced nonvolatile CMOS technology, the device offers access times to 200 ns with power dis | AtmelAtmel Corporation 爱特梅尔爱特梅尔公司 | |||
4-Megabit 512K x 8 Paged E2PROM Description The AT28C040 is a high-performance electrically erasable and programmable read only memory (E2PROM). Its 4 megabits of memory is organized as 524,288 words by 8 bits. Manufactured with Atmels advanced nonvolatile CMOS technology, the device offers access times to 200 ns with power dis | AtmelAtmel Corporation 爱特梅尔爱特梅尔公司 | |||
4-Megabit 512K x 8 Paged E2PROM Description The AT28C040 is a high-performance electrically erasable and programmable read only memory (E2PROM). Its 4 megabits of memory is organized as 524,288 words by 8 bits. Manufactured with Atmels advanced nonvolatile CMOS technology, the device offers access times to 200 ns with power dis | AtmelAtmel Corporation 爱特梅尔爱特梅尔公司 | |||
4-Megabit 512K x 8 Paged E2PROM Description The AT28C040 is a high-performance electrically erasable and programmable read only memory (E2PROM). Its 4 megabits of memory is organized as 524,288 words by 8 bits. Manufactured with Atmels advanced nonvolatile CMOS technology, the device offers access times to 200 ns with power dis | AtmelAtmel Corporation 爱特梅尔爱特梅尔公司 | |||
4-Megabit 512K x 8 Paged E2PROM Description The AT28C040 is a high-performance electrically erasable and programmable read only memory (E2PROM). Its 4 megabits of memory is organized as 524,288 words by 8 bits. Manufactured with Atmels advanced nonvolatile CMOS technology, the device offers access times to 200 ns with power dis | AtmelAtmel Corporation 爱特梅尔爱特梅尔公司 | |||
4-Megabit 512K x 8 Paged E2PROM Description The AT28C040 is a high-performance electrically erasable and programmable read only memory (E2PROM). Its 4 megabits of memory is organized as 524,288 words by 8 bits. Manufactured with Atmels advanced nonvolatile CMOS technology, the device offers access times to 200 ns with power dis | AtmelAtmel Corporation 爱特梅尔爱特梅尔公司 | |||
4-Megabit 512K x 8 Paged E2PROM Description The AT28C040 is a high-performance electrically erasable and programmable read only memory (E2PROM). Its 4 megabits of memory is organized as 524,288 words by 8 bits. Manufactured with Atmels advanced nonvolatile CMOS technology, the device offers access times to 200 ns with power dis | AtmelAtmel Corporation 爱特梅尔爱特梅尔公司 | |||
4-Megabit 512K x 8 Paged E2PROM Description The AT28C040 is a high-performance electrically erasable and programmable read only memory (E2PROM). Its 4 megabits of memory is organized as 524,288 words by 8 bits. Manufactured with Atmels advanced nonvolatile CMOS technology, the device offers access times to 200 ns with power dis | AtmelAtmel Corporation 爱特梅尔爱特梅尔公司 | |||
4-Megabit 512K x 8 Paged E2PROM Description The AT28C040 is a high-performance electrically erasable and programmable read only memory (E2PROM). Its 4 megabits of memory is organized as 524,288 words by 8 bits. Manufactured with Atmels advanced nonvolatile CMOS technology, the device offers access times to 200 ns with power dis | AtmelAtmel Corporation 爱特梅尔爱特梅尔公司 | |||
4-Megabit 512K x 8 Paged E2PROM Description The AT28C040 is a high-performance electrically erasable and programmable read only memory (E2PROM). Its 4 megabits of memory is organized as 524,288 words by 8 bits. Manufactured with Atmels advanced nonvolatile CMOS technology, the device offers access times to 200 ns with power dis | AtmelAtmel Corporation 爱特梅尔爱特梅尔公司 | |||
4-Megabit 512K x 8 Paged E2PROM Description The AT28C040 is a high-performance electrically erasable and programmable read only memory (E2PROM). Its 4 megabits of memory is organized as 524,288 words by 8 bits. Manufactured with Atmels advanced nonvolatile CMOS technology, the device offers access times to 200 ns with power dis | AtmelAtmel Corporation 爱特梅尔爱特梅尔公司 | |||
4-Megabit (512K x 8) Paged Parallel EEPROMs 文件:475.92 Kbytes Page:16 Pages | AtmelAtmel Corporation 爱特梅尔爱特梅尔公司 | |||
4-Megabit (512K x 8) Paged Parallel EEPROMs 文件:385.3 Kbytes Page:15 Pages | AtmelAtmel Corporation 爱特梅尔爱特梅尔公司 | |||
Automatic Page Write Operation 文件:385.33 Kbytes Page:15 Pages | AtmelAtmel Corporation 爱特梅尔爱特梅尔公司 | |||
封装/外壳:32-CFlatPack 包装:管件 描述:IC EEPROM 4MBIT PAR 32FLATPACK 集成电路(IC) 存储器 | Microchip 微芯科技 | |||
4-Megabit (512K x 8) Paged Parallel EEPROMs 文件:385.3 Kbytes Page:15 Pages | AtmelAtmel Corporation 爱特梅尔爱特梅尔公司 | |||
4-Megabit (512K x 8) Paged Parallel EEPROMs 文件:475.92 Kbytes Page:16 Pages | AtmelAtmel Corporation 爱特梅尔爱特梅尔公司 | |||
4-Megabit (512K x 8) Paged Parallel EEPROMs 文件:475.92 Kbytes Page:16 Pages | AtmelAtmel Corporation 爱特梅尔爱特梅尔公司 | |||
4-Megabit (512K x 8) Paged Parallel EEPROMs 文件:385.3 Kbytes Page:15 Pages | AtmelAtmel Corporation 爱特梅尔爱特梅尔公司 | |||
封装/外壳:44-CLCC 包装:管件 描述:IC EEPROM 4MBIT PARALLEL 44CLCC 集成电路(IC) 存储器 | Microchip 微芯科技 | |||
4-Megabit (512K x 8) Paged Parallel EEPROMs 文件:385.3 Kbytes Page:15 Pages | AtmelAtmel Corporation 爱特梅尔爱特梅尔公司 | |||
4-Megabit (512K x 8) Paged Parallel EEPROMs 文件:475.92 Kbytes Page:16 Pages | AtmelAtmel Corporation 爱特梅尔爱特梅尔公司 | |||
4-Megabit (512K x 8) Paged Parallel EEPROMs 文件:475.92 Kbytes Page:16 Pages | AtmelAtmel Corporation 爱特梅尔爱特梅尔公司 | |||
4-Megabit (512K x 8) Paged Parallel EEPROMs 文件:385.3 Kbytes Page:15 Pages | AtmelAtmel Corporation 爱特梅尔爱特梅尔公司 | |||
4-Megabit (512K x 8) Paged Parallel EEPROMs 文件:475.92 Kbytes Page:16 Pages | AtmelAtmel Corporation 爱特梅尔爱特梅尔公司 | |||
5 Volt, Byte Alterable E2PROM DESCRIPTION The XM28C040 is a high density 4 Megabit E2PROM comprised of four X28C010s mounted on a co-fired multilayered ceramic substrate. Individual components are 100 tested prior to assembly in module form and then 100 tested after assembly. TYPICAL FEATURES • High Density 4 Megabit (512K | Xicor Xicor Inc. |
AT28C040产品属性
- 类型
描述
- 型号
AT28C040
- 制造商
ATMEL
- 制造商全称
ATMEL Corporation
- 功能描述
4-Megabit(512K x 8) Paged Parallel EEPROMs
IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
AT |
22+ |
DIP |
30000 |
十七年VIP会员,诚信经营,一手货源,原装正品可零售! |
|||
ATMEL/爱特梅尔 |
25+ |
CLCC |
58788 |
百分百原装现货 实单必成 欢迎询价 |
|||
ATMEL/爱特梅尔 |
23+ |
DIP32 |
5000 |
专注配单,只做原装进口现货 |
|||
AT |
23+ |
DIP |
5000 |
原厂授权代理,海外优势订货渠道。可提供大量库存,详 |
|||
Microchip |
25+ |
电联咨询 |
7800 |
公司现货,提供拆样技术支持 |
|||
ATMEL |
22+ |
SOP |
8200 |
原装现货库存.价格优势!! |
|||
24+ |
N/A |
67000 |
一级代理-主营优势-实惠价格-不悔选择 |
||||
ATMEL |
24+ |
CFP |
35210 |
原装现货/放心购买 |
|||
AT |
23+ |
DIP |
3000 |
原装正品假一罚百!可开增票! |
|||
ATMEL |
2024+ |
N/A |
70000 |
柒号只做原装 现货价秒杀全网 |
AT28C040规格书下载地址
AT28C040参数引脚图相关
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- AT25640
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- AT-255
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制造商: Microchip 产品种类: 电可擦除可编程只读存储器 安装风格: SMD/SMT 封装 / 箱体: LCC-32 存储容量: 256 kbit 组织: 32 k x 8 接口类型: Serial, 4-Wire, SDI, SPI 访问时间: 150 ns 数据保留: 10 Year 电源电流—最大值: 50 mA 电源电压-最小: 4.5 V 电源电压-最大: 5.5 V 最小工作温度
2019-11-29AT28C256-15LM/883
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2019-11-29AT28C010-12DM/883电可擦除可编程只读存储器
制造商: Microchip 产品种类: 电可擦除可编程只读存储器 发货限制: Mouser 目前在您所在地区不销售该产品。 RoHS: N 安装风格: Through Hole 封装 / 箱体: Cerdip-32 存储容量: 1 Mbit 组织: 128 k x 8 接口类型: Parallel 访问时间: 120 ns 数据保留: 10 Year 最大时钟频率: 5 MHz 电源电流
2019-11-29
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