High Density 5 Volt Byte Alterable Nonvolatile Memory Array

DESCRIPTION The XM28C040P is a high density CMOS byte alterable nonvolatile memory array constructed on a cofired ceramic substrate using Xicor’s 128K x 8 components in 32-pad leadless chip carriers. The Substrate is a 66-pin ceramic pin grid array. FEATURES • High Density Memory Module —1

5 Volt, Byte Alterable E2PROM

DESCRIPTION The XM28C040 is a high density 4 Megabit E2PROM comprised of four X28C010s mounted on a co-fired multilayered ceramic substrate. Individual components are 100 tested prior to assembly in module form and then 100 tested after assembly. TYPICAL FEATURES • High Density 4 Megabit (512K

High Density 5 Volt Byte Alterable Nonvolatile Memory Array

DESCRIPTION The XM28C040P is a high density CMOS byte alterable nonvolatile memory array constructed on a cofired ceramic substrate using Xicor’s 128K x 8 components in 32-pad leadless chip carriers. The Substrate is a 66-pin ceramic pin grid array. FEATURES • High Density Memory Module —1

High Density 5 Volt Byte Alterable Nonvolatile Memory Array

DESCRIPTION The XM28C040P is a high density CMOS byte alterable nonvolatile memory array constructed on a cofired ceramic substrate using Xicor’s 128K x 8 components in 32-pad leadless chip carriers. The Substrate is a 66-pin ceramic pin grid array. FEATURES • High Density Memory Module —1

High Density 5 Volt Byte Alterable Nonvolatile Memory Array

DESCRIPTION The XM28C040P is a high density CMOS byte alterable nonvolatile memory array constructed on a cofired ceramic substrate using Xicor’s 128K x 8 components in 32-pad leadless chip carriers. The Substrate is a 66-pin ceramic pin grid array. FEATURES • High Density Memory Module —1

High Density 5 Volt Byte Alterable Nonvolatile Memory Array

DESCRIPTION The XM28C040P is a high density CMOS byte alterable nonvolatile memory array constructed on a cofired ceramic substrate using Xicor’s 128K x 8 components in 32-pad leadless chip carriers. The Substrate is a 66-pin ceramic pin grid array. FEATURES • High Density Memory Module —1

High Density 5 Volt Byte Alterable Nonvolatile Memory Array

DESCRIPTION The XM28C040P is a high density CMOS byte alterable nonvolatile memory array constructed on a cofired ceramic substrate using Xicor’s 128K x 8 components in 32-pad leadless chip carriers. The Substrate is a 66-pin ceramic pin grid array. FEATURES • High Density Memory Module —1

High Density 5 Volt Byte Alterable Nonvolatile Memory Array

DESCRIPTION The XM28C040P is a high density CMOS byte alterable nonvolatile memory array constructed on a cofired ceramic substrate using Xicor’s 128K x 8 components in 32-pad leadless chip carriers. The Substrate is a 66-pin ceramic pin grid array. FEATURES • High Density Memory Module —1

High Density 5 Volt Byte Alterable Nonvolatile Memory Array

DESCRIPTION The XM28C040P is a high density CMOS byte alterable nonvolatile memory array constructed on a cofired ceramic substrate using Xicor’s 128K x 8 components in 32-pad leadless chip carriers. The Substrate is a 66-pin ceramic pin grid array. FEATURES • High Density Memory Module —1

High Density 5 Volt Byte Alterable Nonvolatile Memory Array

DESCRIPTION The XM28C040P is a high density CMOS byte alterable nonvolatile memory array constructed on a cofired ceramic substrate using Xicor’s 128K x 8 components in 32-pad leadless chip carriers. The Substrate is a 66-pin ceramic pin grid array. FEATURES • High Density Memory Module —1

High Density 5 Volt Byte Alterable Nonvolatile Memory Array

DESCRIPTION The XM28C040P is a high density CMOS byte alterable nonvolatile memory array constructed on a cofired ceramic substrate using Xicor’s 128K x 8 components in 32-pad leadless chip carriers. The Substrate is a 66-pin ceramic pin grid array. FEATURES • High Density Memory Module —1

4-Megabit 512K x 8 Paged E2PROM

Description The AT28C040 is a high-performance electrically erasable and programmable read only memory (E2PROM). Its 4 megabits of memory is organized as 524,288 words by 8 bits. Manufactured with Atmels advanced nonvolatile CMOS technology, the device offers access times to 200 ns with power dis

4-Megabit (512K x 8) Paged Parallel EEPROMs

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4-Megabit (512K x 8) Paged Parallel EEPROMs

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Automatic Page Write Operation

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