WP1602A-Y-JCS

[DB LECTRO Inc.] Module Classification Information • Brand： DB LECTRO Inc. • Display Type： H→ Character Type, G→ Graphic Type , P→ PLED • Display Font： Character 16 words, 2Lines. • Model serials no. • Backlight Type： Y→ Yellow Green ErrSpecial Code JCS: English and Japanese standard font

SMD Type White Emitter

Features  Side view 0602 package  Viewing Angle = 60  Compatible with infrared and vapor phase reflow solder process  High reliability  Ultra bright White  RoHS compliance Applications  Optical indicator.  Switch and Symbol Display. Description The WP160306-CSC3 is an Alln

SMD Type White Emitter

Features  Top view 0603 package  Viewing Angle = 65  Compatible with infrared and vapor phase reflow solder process  High reliability  Ultra bright White  RoHS compliance Applications  Optical indicator.  Switch and Symbol Display. Description The WP160804-CTC4 is an AllnG

SMD Type White Emitter

Features  Small double-end package  Viewing Angle = 65  Compatible with infrared and vapor phase reflow solder process  High reliability  Ultra bright White  RoHS compliance Applications  Optical indicator.  Switch and Symbol Display. Description The WP160806-ATC4 is an Al

SMD Type White Emitter

Features  Reverse view 0603 package  Viewing Angle = 65  Compatible with infrared and vapor phase reflow solder process  High reliability  Ultra bright White  RoHS compliance Applications  Optical indicator.  Switch and Symbol Display. Description The WP160806-DRC4 is an A

SMD Type White Emitter

Features  Top view 0603 package  Viewing Angle = 65  Compatible with infrared and vapor phase reflow solder process  High reliability  Ultra bright White  RoHS compliance Applications  Optical indicator.  Switch and Symbol Display. Description The WP160806-DTC4 is an AllnG

WP1602B-Y-JCS

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Visible LED : PCB

Visible LED : PCB

Visible LED : PCB

Axial Lead Rectifiers

Axial Lead Rectifiers . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State–of–the–art geometry features epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low–voltage, high–frequency invert

MOSFET BROADBAND RF POWER FET

The RF MOSFET Line Power Field Effect Transistor N–Channel Enhancement–Mode MOSFET Designed primarily for wideband large–signal output and driver from 30–500 MHz. • Typical Performance at 400 MHz, 28 Vdc Output Power = 4.0 Watts Gain = 17 dB Efficiency = 50 • Excellent Thermal

500 mW DHD ZENER DIODE DO-35

DESCRIPTION NEC Type RD2.0E to RD200E Series are planar type zener diode in the popular DO-35 package with DHD (Double Heatsink Diode) construction having allowable power dissipation of 500 mW. To meet various application at customers, Vz (zener voltage) is classified into the tight tolerance und

MOSORB ZENER OVERVOLTAGE TRANSIENT SUPPRESSORS

The SA5.0A series is designed to protect voltage sensitive components from high voltage, high energy transients. They have excellent clamping capability, high surge capability, low zener impedance and fast response time. The SA5.0A series is supplied in Motorola’s exclusive, cost-effective, highly

POWER TRANSISTORS(10A,320-380V,125W)