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VT6045C价格

参考价格:¥9.9688

型号:VT6045CBP-M3/4W 品牌:Vishay 备注:这里有VT6045C多少钱,2026年最近7天走势,今日出价,今日竞价,VT6045C批发/采购报价,VT6045C行情走势销售排行榜,VT6045C报价。
型号 功能描述 生产厂家 企业 LOGO 操作
VT6045C

Dual Low-Voltage Trench MOS Barrier Schottky Rectifier

FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder dip 275 °C max. 10 s, per JESD 22-B106 • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATIONS For use in hi

VISHAYVishay Siliconix

威世威世科技公司

VT6045C

Dual Low-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.33 V at IF = 10 A

Trench MOS Schottky technology\nLow forward voltage drop, low power losses\nHigh efficiency operation;

VISHAYVishay Siliconix

威世威世科技公司

VT6045C

Dual Low-Voltage Trench MOS Barrier Schottky Rectifier

文件:125.01 Kbytes Page:5 Pages

VISHAYVishay Siliconix

威世威世科技公司

VT6045C

Dual Low-Voltage Trench MOS Barrier Schottky Rectifier

文件:132.24 Kbytes Page:5 Pages

VISHAYVishay Siliconix

威世威世科技公司

Dual Low-Voltage Trench MOS Barrier Schottky Rectifier

FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder dip 275 °C max. 10 s, per JESD 22-B106 • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATIONS For use in hi

VISHAYVishay Siliconix

威世威世科技公司

Trench MOS Barrier Schottky Rectifier for PV Solar Cell Bypass Protection

FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder dip 275 °C max. 10 s, per JESD 22-B106 • TJ 200 °C max. in solar bypass mode application • Material categorization: for definitions of compliance please see www.vishay

VISHAYVishay Siliconix

威世威世科技公司

Trench MOS Barrier Schottky Rectifier for PV Solar Cell Bypass Protection

FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder dip 275 °C max. 10 s, per JESD 22-B106 • TJ 200 °C max. in solar bypass mode application • Material categorization: for definitions of compliance please see www.vishay

VISHAYVishay Siliconix

威世威世科技公司

Dual Low-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.33 V at IF = 10 A

·Trench MOS Schottky technology\n·Low forward voltage drop, low power losses\n·High efficiency operation;

VISHAYVishay Siliconix

威世威世科技公司

Dual Low-Voltage Trench MOS Barrier Schottky Rectifier

文件:132.24 Kbytes Page:5 Pages

VISHAYVishay Siliconix

威世威世科技公司

Dual Low-Voltage Trench MOS Barrier Schottky Rectifier

文件:135.06 Kbytes Page:6 Pages

VISHAYVishay Siliconix

威世威世科技公司

Trench MOS Barrier Schottky Rectifier

文件:122.03 Kbytes Page:5 Pages

VISHAYVishay Siliconix

威世威世科技公司

Trench MOS Barrier Schottky Rectifier

文件:122.34 Kbytes Page:4 Pages

VISHAYVishay Siliconix

威世威世科技公司

Trench MOS Barrier Schottky Rectifier

文件:123.91 Kbytes Page:4 Pages

VISHAYVishay Siliconix

威世威世科技公司

Trench MOS Barrier Schottky Rectifier

文件:123.91 Kbytes Page:4 Pages

VISHAYVishay Siliconix

威世威世科技公司

Trench MOS Barrier Schottky Rectifier for PV Solar Cell Bypass Protection

文件:126.89 Kbytes Page:4 Pages

VISHAYVishay Siliconix

威世威世科技公司

Trench MOS Barrier Schottky Rectifier

文件:122.34 Kbytes Page:4 Pages

VISHAYVishay Siliconix

威世威世科技公司

Trench MOS Barrier Schottky Rectifier

文件:123.91 Kbytes Page:4 Pages

VISHAYVishay Siliconix

威世威世科技公司

Trench MOS Schottky technology

文件:135.28 Kbytes Page:5 Pages

VISHAYVishay Siliconix

威世威世科技公司

Dual Low-Voltage Trench MOS Barrier Schottky Rectifier

文件:128.36 Kbytes Page:5 Pages

VISHAYVishay Siliconix

威世威世科技公司

封装/外壳:TO-220-3 包装:管件 描述:DIODE SCHOTTKY 45V 30A TO-220AB 分立半导体产品 二极管 - 整流器 - 阵列

ETC

知名厂家

Dual Low-Voltage Trench MOS Barrier Schottky Rectifier

文件:135.06 Kbytes Page:6 Pages

VISHAYVishay Siliconix

威世威世科技公司

Dual Low-Voltage Trench MOS Barrier Schottky Rectifier

文件:132.24 Kbytes Page:5 Pages

VISHAYVishay Siliconix

威世威世科技公司

Trench MOS Schottky technology

文件:135.28 Kbytes Page:5 Pages

VISHAYVishay Siliconix

威世威世科技公司

封装/外壳:TO-220-3 包装:管件 描述:DIODE SCHOTTKY 45V 30A TO-220AB 分立半导体产品 二极管 - 整流器 - 阵列

ETC

知名厂家

肖特基二极管与整流器 60A 45V DUAL TrenchMOS

VISHAYVishay Siliconix

威世威世科技公司

Dual Low-Voltage Trench MOS Barrier Schottky Rectifier

文件:128.36 Kbytes Page:5 Pages

VISHAYVishay Siliconix

威世威世科技公司

Dual Low-Voltage Trench MOS Barrier Schottky Rectifier

文件:132.24 Kbytes Page:5 Pages

VISHAYVishay Siliconix

威世威世科技公司

Dual Low-Voltage Trench MOS Barrier Schottky Rectifier

文件:135.06 Kbytes Page:6 Pages

VISHAYVishay Siliconix

威世威世科技公司

SWITCHMODE??Power Rectifier

SWITCHMODE™ Power Rectifier The SWITCHMODE power rectifier employs the use of the Schottky Barrier principle with a Platinum barrier metal. This state-of-the-art device has the following features: • Dual Diode Construction — Terminals 1 and 3 May Be Connected for Parallel Operation at Full Ratin

MOTOROLA

摩托罗拉

SWITCHMODE??Power Rectifier

The SWITCHMODE power rectifier employs the use of the Schottky Barrier principle with a Platinum barrier metal. This state-of-the-art device has the following features: • Dual Diode Construction — Terminals 1 and 3 May Be Connected for Parallel Operation at Full Rating • 45 Volt Blocking Voltage

MOTOROLA

摩托罗拉

SWITCHMODE??Power Rectifier

The SWITCHMODE power rectifier employs the use of the Schottky Barrier principle with a Platinum barrier metal. This state-of-the-art device has the following features: • Dual Diode Construction — Terminals 1 and 3 May Be Connected for Parallel Operation at Full Rating • 45 Volt Blocking Voltage

MOTOROLA

摩托罗拉

SWITCHMODE??Power Rectifier

SWITCHMODE™ Power Rectifier The SWITCHMODE power rectifier employs the use of the Schottky Barrier principle with a Platinum barrier metal. This state-of-the-art device has the following features: • Dual Diode Construction — Terminals 1 and 3 May Be Connected for Parallel Operation at Full Ratin

MOTOROLA

摩托罗拉

Industrial Silicon Rectifier, 60A

Features: • Low Leakage Current • Good Surge Capability up to 1000A • Availavle in Standard and Reverse Polarity

NTE

VT6045C产品属性

  • 类型

    描述

  • 型号

    VT6045C

  • 制造商

    VISHAY

  • 制造商全称

    Vishay Siliconix

  • 功能描述

    Dual Low-Voltage Trench MOS Barrier Schottky Rectifier

更新时间:2026-7-31 18:45:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
VISHAY/威世
23+
TO-220-3
11200
原厂授权一级代理、全球订货优势渠道、可提供一站式BO
VISHAY/威世
2540+
TO-220
8595
只做原装正品假一赔十为客户做到零风险!!
VISHAY/威世
23+
TO-220
50000
全新原装正品现货,支持订货
Vishay Semiconductor Diodes Di
22+
TO220AB
9000
原厂渠道,现货配单
VISHAY/威世
26+
TO-220
1000
专注全新正品,优势现货供应
Vishay
26+
SOT-89
86720
全新原装进口现货价格优惠 本公司承诺原装正品假一赔
VISHAY/威世
25+
TO220AB
15000
本公司 只做全新原装正品
VISHAY
19+
TO-220
280
一级代理,专注军工、汽车、医疗、工业、新能源、电力
VISHAY
原厂封装
9800
原装进口公司现货假一赔百
26+
N/A
76000
一级代理-主营优势-实惠价格-不悔选择

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