Trench MOS Barrier Schottky Rectifier

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Trench MOS Barrier Schottky Rectifier for PV Solar Cell Bypass Protection

FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder dip 275 °C max. 10 s, per JESD 22-B106 • TJ 200 °C max. in solar bypass mode application • Material categorization: for definitions of compliance please see www.vishay

Trench MOS Barrier Schottky Rectifier for PV Solar Cell Bypass Protection Ultra Low VF = 0.33 V at IF = 10 A

Trench MOS Schottky technology\n Low forward voltage drop, low power losses\n High efficiency operation\n\n ;

Trench MOS Barrier Schottky Rectifier for PV Solar Cell Bypass Protection

FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder dip 275 °C max. 10 s, per JESD 22-B106 • TJ 200 °C max. in solar bypass mode application • Material categorization: for definitions of compliance please see www.vishay

Trench MOS Barrier Schottky Rectifier

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Trench MOS Barrier Schottky Rectifier

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Trench MOS Barrier Schottky Rectifier

文件：123.91 Kbytes Page：4 Pages

Trench MOS Barrier Schottky Rectifier for PV Solar Cell Bypass Protection

文件：126.89 Kbytes Page：4 Pages

封装/外壳：TO-220-3 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：DIODE ARRAY SCHOTTKY 45V TO220AB 分立半导体产品 二极管 - 整流器 - 阵列

Trench MOS Barrier Schottky Rectifier

文件：123.91 Kbytes Page：4 Pages

Trench MOS Barrier Schottky Rectifier

文件：122.34 Kbytes Page：4 Pages

SWITCHMODE??Power Rectifier

SWITCHMODE™ Power Rectifier The SWITCHMODE power rectifier employs the use of the Schottky Barrier principle with a Platinum barrier metal. This state-of-the-art device has the following features: • Dual Diode Construction — Terminals 1 and 3 May Be Connected for Parallel Operation at Full Ratin

SWITCHMODE??Power Rectifier

The SWITCHMODE power rectifier employs the use of the Schottky Barrier principle with a Platinum barrier metal. This state-of-the-art device has the following features: • Dual Diode Construction — Terminals 1 and 3 May Be Connected for Parallel Operation at Full Rating • 45 Volt Blocking Voltage

SWITCHMODE??Power Rectifier

The SWITCHMODE power rectifier employs the use of the Schottky Barrier principle with a Platinum barrier metal. This state-of-the-art device has the following features: • Dual Diode Construction — Terminals 1 and 3 May Be Connected for Parallel Operation at Full Rating • 45 Volt Blocking Voltage

SWITCHMODE??Power Rectifier

SWITCHMODE™ Power Rectifier The SWITCHMODE power rectifier employs the use of the Schottky Barrier principle with a Platinum barrier metal. This state-of-the-art device has the following features: • Dual Diode Construction — Terminals 1 and 3 May Be Connected for Parallel Operation at Full Ratin

Industrial Silicon Rectifier, 60A

Features: • Low Leakage Current • Good Surge Capability up to 1000A • Availavle in Standard and Reverse Polarity