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VT6045CBP价格
参考价格：￥9.9688
型号：VT6045CBP-M3/4W 品牌：Vishay 备注：这里有VT6045CBP多少钱，2025年最近7天走势，今日出价，今日竞价，VT6045CBP批发/采购报价，VT6045CBP行情走势销售排行榜，VT6045CBP报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
VT6045CBP | Trench MOS Barrier Schottky Rectifier for PV Solar Cell Bypass Protection FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder dip 275 °C max. 10 s, per JESD 22-B106 • TJ 200 °C max. in solar bypass mode application • Material categorization: for definitions of compliance please see www.vishay | VishayVishay Siliconix 威世威世科技公司 |   | |
VT6045CBP | Trench MOS Barrier Schottky Rectifier 文件：122.34 Kbytes Page：4 Pages | VishayVishay Siliconix 威世威世科技公司 | | |
VT6045CBP | Trench MOS Barrier Schottky Rectifier 文件：123.91 Kbytes Page：4 Pages | VishayVishay Siliconix 威世威世科技公司 | | |
Trench MOS Barrier Schottky Rectifier for PV Solar Cell Bypass Protection FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder dip 275 °C max. 10 s, per JESD 22-B106 • TJ 200 °C max. in solar bypass mode application • Material categorization: for definitions of compliance please see www.vishay | VishayVishay Siliconix 威世威世科技公司 | | ||
Trench MOS Barrier Schottky Rectifier for PV Solar Cell Bypass Protection Ultra Low VF = 0.33 V at IF = 10 A | VishayVishay Siliconix 威世威世科技公司 | | ||
Trench MOS Barrier Schottky Rectifier 文件：123.91 Kbytes Page：4 Pages | VishayVishay Siliconix 威世威世科技公司 | | ||
Trench MOS Barrier Schottky Rectifier for PV Solar Cell Bypass Protection 文件：126.89 Kbytes Page：4 Pages | VishayVishay Siliconix 威世威世科技公司 | | ||
封装/外壳：TO-220-3 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：DIODE ARRAY SCHOTTKY 45V TO220AB 分立半导体产品 二极管 - 整流器 - 阵列 | ETC 知名厂家 | ETC | | |
Trench MOS Barrier Schottky Rectifier 文件：123.91 Kbytes Page：4 Pages | VishayVishay Siliconix 威世威世科技公司 | | ||
Trench MOS Barrier Schottky Rectifier 文件：122.34 Kbytes Page：4 Pages | VishayVishay Siliconix 威世威世科技公司 | | ||
isc N-Channel MOSFET Transistor FEATURES ·Drain Current : ID= 14.5A@ TC=25℃ ·Drain Source Voltage : VDSS= 600V(Min) ·Static Drain-Source On-Resistance : RDS(on) =0.45Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC | ISC 无锡固电 | | ||
isc N-Channel MOSFET Transistor FEATURES ·Drain Current : ID= 17A@ TC=25℃ ·Drain Source Voltage : VDSS=600V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.45Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-D | ISC 无锡固电 | | ||
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS POWER MOS IV® N- CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS | ADPOW | | ||
isc N-Channel MOSFET Transistor FEATURES ·Drain Current : ID= 17A@ TC=25℃ ·Drain Source Voltage : VDSS= 600V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.45Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC- | ISC 无锡固电 | | ||
SINGLE POLE, SINGLE THROW CONNECTORIZED SWITCHES 文件：40.48 Kbytes Page：1 Pages | MICRONETICS 微盟电子 | |
VT6045CBP产品属性
- 类型
描述
- 型号
VT6045CBP
- 制造商
VISHAY
- 制造商全称
Vishay Siliconix
- 功能描述
Trench MOS Barrier Schottky Rectifier
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
VISHAY/威世 |
22+ |
TO-220 |
100000 |
代理渠道/只做原装/可含税 |
|||
VISHAY/威世 |
2023+ |
TO-220 |
1000 |
专注全新正品,优势现货供应 |
|||
VISHAY |
19+ |
TO-220 |
280 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
VISHAY |
原厂封装 |
9800 |
原装进口公司现货假一赔百 |
||||
VISHAY/威世 |
22+ |
TO220AB |
6000 |
十年配单,只做原装 |
|||
VISHAY/威世 |
23+ |
TO-220-3 |
11200 |
原厂授权一级代理、全球订货优势渠道、可提供一站式BO |
|||
VISHAY |
17+ |
TO220 |
40 |
原装 |
|||
24+ |
N/A |
76000 |
一级代理-主营优势-实惠价格-不悔选择 |
||||
Vishay Semiconductor Diodes Di |
23+ |
TO220AB |
8000 |
只做原装现货 |
|||
VISHAY/威世 |
24+ |
TO220AB |
60000 |
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