MBR6045WT价格
参考价格:¥14.4704
型号:MBR6045WTG 品牌:ON 备注:这里有MBR6045WT多少钱,2026年最近7天走势,今日出价,今日竞价,MBR6045WT批发/采购报价,MBR6045WT行情走势销售排行榜,MBR6045WT报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
MBR6045WT | SWITCHMODE??Power Rectifier SWITCHMODE™ Power Rectifier The SWITCHMODE power rectifier employs the use of the Schottky Barrier principle with a Platinum barrier metal. This state-of-the-art device has the following features: • Dual Diode Construction — Terminals 1 and 3 May Be Connected for Parallel Operation at Full Ratin | MOTOROLA 摩托罗拉 | ||
MBR6045WT | 60 Amp Schottky Barrier Rectifier 45 Volts Features • High Surge Capacity • Low Power Loss, High Efficiency • High Current Capability, Low VF • Metal of silicon Rectifier, majority Carrier Conduction • Guard Ring For Transient Protection • Plastic Package Has UL Flammability Classification 94V-0 | MCC | ||
MBR6045WT | SCHOTTKY RECIFIER DESCRIPTION The MBR6045WT center tap Schottky rectifier has been optimized for very low forward voltage drop, with moderate leakage. The proprietary barrier technology allows for reliable operation up to 150 °C junction temperature. Typical applications are in switching power supplies, converters | IRF | ||
MBR6045WT | Schottky Rectifier, 2 x 30 A DESCRIPTION The MBR6045WT center tap Schottky rectifier has been optimized for very low forward voltage drop, with moderate leakage. The proprietary barrier technology allows for reliable operation up to 150 °C junction temperature. Typical applications are in switching power supplies, converte | VISHAYVishay Siliconix 威世威世科技公司 | ||
MBR6045WT | SWITCHMODE Power Rectifier SWITCHMODE™ Power Rectifier The SWITCHMODE power rectifier employs the use of the Schottky Barrier principle with a Platinum barrier metal. Features • Dual Diode Construction; Terminals 1 and 3 May Be Connected for Parallel Operation at Full Rating • 45 V Blocking Voltage • Low Forward Voltag | ONSEMI 安森美半导体 | ||
MBR6045WT | SCHOTTKY RECTIFIER Features: • 150°C TJ operation • Center tap TO-247AD package • Low forward voltage drop • High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance • High frequency operation • Guard ring for enhanced ruggedness and long term reliability • Th | SMC 桑德斯微电子 | ||
MBR6045WT | Schottky Barrier Rectifier FEATURES • Low Forward Voltage • Guard -Ring for Stress Protection • High Surge Capability • 175℃ Operating Junction Temperature • Pb-Free Package is Available • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation | ISC 无锡固电 | ||
MBR6045WT | Low forward voltage drop Description Littelfuse MBR series Schottky Barrier Rectifier is designed to meet the general requirements of commercial applications by providing high temperature, low leakage and low VF products. It is suitable for high frequency switching mode power supply, free-wheeling diodes and polarity pr | LITTELFUSE 力特 | ||
MBR6045WT | 60A SCHOTTKY RECTIFIER 60A SCHOTTKY RECTIFIER Available Non-RoHS (standard) or RoHS compliant (add PBF suffix). Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number. | DIGITRON | ||
MBR6045WT | 60 Amp Schottky Barrier Rectifier 45 Volts Features • High Surge Capacity • Low Power Loss, High Efficiency • High Current Capability, Low VF • Metal of silicon Rectifier, majority Carrier Conduction • Guard Ring For Transient Protection • Plastic Package Has UL Flammability Classification 94V-0 | KERSEMI | ||
MBR6045WT | 硅肖特基二极管 • 高结温能力\n• 保护环可增强耐用性,并长时间保持可靠性\n• 低正向电压降\n• 高频运行\n• 共阴极配置,TO-247AD封装 ; | LITTELFUSE 力特 | ||
MBR6045WT | SCHOTTKY RECIFIER | INFINEON 英飞凌 | ||
MBR6045WT | 封装/外壳:TO-247-3 包装:管件 描述:DIODE ARRAY SCHOTTKY 45VTO247AC 分立半导体产品 二极管 - 整流器 - 阵列 | ETC 知名厂家 | ETC | |
MBR6045WT | 封装/外壳:TO-247-3 包装:卷带(TR)剪切带(CT)Digi-Reel® 得捷定制卷带 描述:DIODE ARRAY SCHOTTKY 45V TO247AD 分立半导体产品 二极管 - 整流器 - 阵列 | SMCDIODE 桑德斯微电子 | ||
MBR6045WT | 肖特基二极管 | SMC 桑德斯微电子 | ||
Switch Mode Power Rectifier SWITCHMODE™ Power Rectifier The SWITCHMODE power rectifier employs the use of the Schottky Barrier principle with a Platinum barrier metal. Features • Dual Diode Construction; Terminals 1 and 3 May Be Connected for Parallel Operation at Full Rating • 45 V Blocking Voltage • Low Forward Voltag | ONSEMI 安森美半导体 | |||
SWITCHMODE Power Rectifier SWITCHMODE™ Power Rectifier The SWITCHMODE power rectifier employs the use of the Schottky Barrier principle with a Platinum barrier metal. Features • Dual Diode Construction; Terminals 1 and 3 May Be Connected for Parallel Operation at Full Rating • 45 V Blocking Voltage • Low Forward Voltag | ONSEMI 安森美半导体 | |||
Schottky Rectifier, 2 x 30 A 文件:168.86 Kbytes Page:7 Pages | VISHAYVishay Siliconix 威世威世科技公司 | |||
Schottky Rectifier, 2 x 30 A 文件:168.86 Kbytes Page:7 Pages | VISHAYVishay Siliconix 威世威世科技公司 | |||
Schottky Rectifier, 2 x 30 A 文件:119.24 Kbytes Page:6 Pages | VISHAYVishay Siliconix 威世威世科技公司 | |||
SCHOTTKY RECTIFIER 文件:203.03 Kbytes Page:6 Pages | IRF | |||
Schottky Rectifier, 2 x 30 A 文件:168.86 Kbytes Page:7 Pages | VISHAYVishay Siliconix 威世威世科技公司 | |||
SWITCHMODE??Power Rectifier The SWITCHMODE power rectifier employs the use of the Schottky Barrier principle with a Platinum barrier metal. This state-of-the-art device has the following features: • Dual Diode Construction — Terminals 1 and 3 May Be Connected for Parallel Operation at Full Rating • 45 Volt Blocking Voltage | MOTOROLA 摩托罗拉 | |||
SWITCHMODE??Power Rectifier SWITCHMODE™ Power Rectifier The SWITCHMODE power rectifier employs the use of the Schottky Barrier principle with a Platinum barrier metal. This state-of-the-art device has the following features: • Dual Diode Construction — Terminals 1 and 3 May Be Connected for Parallel Operation at Full Ratin | MOTOROLA 摩托罗拉 | |||
SWITCHMODE??Power Rectifier The SWITCHMODE power rectifier employs the use of the Schottky Barrier principle with a Platinum barrier metal. This state-of-the-art device has the following features: • Dual Diode Construction — Terminals 1 and 3 May Be Connected for Parallel Operation at Full Rating • 45 Volt Blocking Voltage | MOTOROLA 摩托罗拉 | |||
Industrial Silicon Rectifier, 60A Features: • Low Leakage Current • Good Surge Capability up to 1000A • Availavle in Standard and Reverse Polarity | NTE |
MBR6045WT产品属性
- 类型
描述
- Pb-free:
Pb
- Status:
Active
- Configuration:
Common Cathode
- VRRM Min (V):
45
- VF Max (V):
0.75
- IRM Max (µA):
1000
- IO(rec) Max (A):
60
- IFSM Max (A):
500
- Package Type:
TO-247-3
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ON(安森美) |
24+ |
标准封装 |
13748 |
全新原装正品/价格优惠/质量保障 |
|||
IR |
2016+ |
TO-247 |
6000 |
公司只做原装,假一罚十,可开17%增值税发票! |
|||
ONSEMI/安森美 |
25+ |
TO247 |
32360 |
ONSEMI/安森美全新特价MBR6045WT即刻询购立享优惠#长期有货 |
|||
ON |
23+ |
TO-247 |
10 |
正规渠道,只有原装! |
|||
IR |
TO-3P |
3200 |
原装长期供货! |
||||
VISHAY |
25+ |
TO-247 |
20540 |
保证进口原装现货假一赔十 |
|||
ON |
24+ |
SMD |
5500 |
长期供应原装现货实单可谈 |
|||
ON |
23+ |
NA |
6800 |
原装正品,力挺实单 |
|||
IR |
22+ |
TO-247 |
3000 |
原装正品,支持实单 |
|||
VISHAY |
21+ |
TO-247 |
6880 |
只做原装,质量保证 |
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DdatasheetPDF页码索引
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