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MBR6045WT价格

参考价格:¥14.4704

型号:MBR6045WTG 品牌:ON 备注:这里有MBR6045WT多少钱,2026年最近7天走势,今日出价,今日竞价,MBR6045WT批发/采购报价,MBR6045WT行情走势销售排行榜,MBR6045WT报价。
型号 功能描述 生产厂家 企业 LOGO 操作
MBR6045WT

SWITCHMODE??Power Rectifier

SWITCHMODE™ Power Rectifier The SWITCHMODE power rectifier employs the use of the Schottky Barrier principle with a Platinum barrier metal. This state-of-the-art device has the following features: • Dual Diode Construction — Terminals 1 and 3 May Be Connected for Parallel Operation at Full Ratin

MOTOROLA

摩托罗拉

MBR6045WT

60 Amp Schottky Barrier Rectifier 45 Volts

Features • High Surge Capacity • Low Power Loss, High Efficiency • High Current Capability, Low VF • Metal of silicon Rectifier, majority Carrier Conduction • Guard Ring For Transient Protection • Plastic Package Has UL Flammability Classification 94V-0

MCC

MBR6045WT

SCHOTTKY RECIFIER

DESCRIPTION The MBR6045WT center tap Schottky rectifier has been optimized for very low forward voltage drop, with moderate leakage. The proprietary barrier technology allows for reliable operation up to 150 °C junction temperature. Typical applications are in switching power supplies, converters

IRF

MBR6045WT

Schottky Rectifier, 2 x 30 A

DESCRIPTION The MBR6045WT center tap Schottky rectifier has been optimized for very low forward voltage drop, with moderate leakage. The proprietary barrier technology allows for reliable operation up to 150 °C junction temperature. Typical applications are in switching power supplies, converte

VISHAYVishay Siliconix

威世威世科技公司

MBR6045WT

SWITCHMODE Power Rectifier

SWITCHMODE™ Power Rectifier The SWITCHMODE power rectifier employs the use of the Schottky Barrier principle with a Platinum barrier metal. Features • Dual Diode Construction; Terminals 1 and 3 May Be Connected for Parallel Operation at Full Rating • 45 V Blocking Voltage • Low Forward Voltag

ONSEMI

安森美半导体

MBR6045WT

SCHOTTKY RECTIFIER

Features: • 150°C TJ operation • Center tap TO-247AD package • Low forward voltage drop • High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance • High frequency operation • Guard ring for enhanced ruggedness and long term reliability • Th

SMC

桑德斯微电子

MBR6045WT

Schottky Barrier Rectifier

FEATURES • Low Forward Voltage • Guard -Ring for Stress Protection • High Surge Capability • 175℃ Operating Junction Temperature • Pb-Free Package is Available • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation

ISC

无锡固电

MBR6045WT

Low forward voltage drop

Description Littelfuse MBR series Schottky Barrier Rectifier is designed to meet the general requirements of commercial applications by providing high temperature, low leakage and low VF products. It is suitable for high frequency switching mode power supply, free-wheeling diodes and polarity pr

LITTELFUSE

力特

MBR6045WT

60A SCHOTTKY RECTIFIER

60A SCHOTTKY RECTIFIER Available Non-RoHS (standard) or RoHS compliant (add PBF suffix). Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number.

DIGITRON

MBR6045WT

60 Amp Schottky Barrier Rectifier 45 Volts

Features • High Surge Capacity • Low Power Loss, High Efficiency • High Current Capability, Low VF • Metal of silicon Rectifier, majority Carrier Conduction • Guard Ring For Transient Protection • Plastic Package Has UL Flammability Classification 94V-0

KERSEMI

MBR6045WT

硅肖特基二极管

• 高结温能力\n• 保护环可增强耐用性,并长时间保持可靠性\n• 低正向电压降\n• 高频运行\n• 共阴极配置,TO-247AD封装 ;

LITTELFUSE

力特

MBR6045WT

SCHOTTKY RECIFIER

INFINEON

英飞凌

MBR6045WT

封装/外壳:TO-247-3 包装:管件 描述:DIODE ARRAY SCHOTTKY 45VTO247AC 分立半导体产品 二极管 - 整流器 - 阵列

ETC

知名厂家

MBR6045WT

封装/外壳:TO-247-3 包装:卷带(TR)剪切带(CT)Digi-Reel® 得捷定制卷带 描述:DIODE ARRAY SCHOTTKY 45V TO247AD 分立半导体产品 二极管 - 整流器 - 阵列

SMCDIODE

桑德斯微电子

MBR6045WT

肖特基二极管

SMC

桑德斯微电子

Switch Mode Power Rectifier

SWITCHMODE™ Power Rectifier The SWITCHMODE power rectifier employs the use of the Schottky Barrier principle with a Platinum barrier metal. Features • Dual Diode Construction; Terminals 1 and 3 May Be Connected for Parallel Operation at Full Rating • 45 V Blocking Voltage • Low Forward Voltag

ONSEMI

安森美半导体

SWITCHMODE Power Rectifier

SWITCHMODE™ Power Rectifier The SWITCHMODE power rectifier employs the use of the Schottky Barrier principle with a Platinum barrier metal. Features • Dual Diode Construction; Terminals 1 and 3 May Be Connected for Parallel Operation at Full Rating • 45 V Blocking Voltage • Low Forward Voltag

ONSEMI

安森美半导体

Schottky Rectifier, 2 x 30 A

文件:168.86 Kbytes Page:7 Pages

VISHAYVishay Siliconix

威世威世科技公司

Schottky Rectifier, 2 x 30 A

文件:168.86 Kbytes Page:7 Pages

VISHAYVishay Siliconix

威世威世科技公司

Schottky Rectifier, 2 x 30 A

文件:119.24 Kbytes Page:6 Pages

VISHAYVishay Siliconix

威世威世科技公司

SCHOTTKY RECTIFIER

文件:203.03 Kbytes Page:6 Pages

IRF

Schottky Rectifier, 2 x 30 A

文件:168.86 Kbytes Page:7 Pages

VISHAYVishay Siliconix

威世威世科技公司

SWITCHMODE??Power Rectifier

The SWITCHMODE power rectifier employs the use of the Schottky Barrier principle with a Platinum barrier metal. This state-of-the-art device has the following features: • Dual Diode Construction — Terminals 1 and 3 May Be Connected for Parallel Operation at Full Rating • 45 Volt Blocking Voltage

MOTOROLA

摩托罗拉

SWITCHMODE??Power Rectifier

SWITCHMODE™ Power Rectifier The SWITCHMODE power rectifier employs the use of the Schottky Barrier principle with a Platinum barrier metal. This state-of-the-art device has the following features: • Dual Diode Construction — Terminals 1 and 3 May Be Connected for Parallel Operation at Full Ratin

MOTOROLA

摩托罗拉

SWITCHMODE??Power Rectifier

The SWITCHMODE power rectifier employs the use of the Schottky Barrier principle with a Platinum barrier metal. This state-of-the-art device has the following features: • Dual Diode Construction — Terminals 1 and 3 May Be Connected for Parallel Operation at Full Rating • 45 Volt Blocking Voltage

MOTOROLA

摩托罗拉

Industrial Silicon Rectifier, 60A

Features: • Low Leakage Current • Good Surge Capability up to 1000A • Availavle in Standard and Reverse Polarity

NTE

MBR6045WT产品属性

  • 类型

    描述

  • Pb-free:

    Pb

  • Status:

    Active

  • Configuration:

    Common Cathode

  • VRRM Min (V):

    45

  • VF Max (V):

    0.75

  • IRM Max (µA):

    1000

  • IO(rec) Max (A):

    60

  • IFSM Max (A):

    500

  • Package Type:

    TO-247-3

更新时间:2026-5-14 22:59:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
ON(安森美)
24+
标准封装
13748
全新原装正品/价格优惠/质量保障
IR
2016+
TO-247
6000
公司只做原装,假一罚十,可开17%增值税发票!
ONSEMI/安森美
25+
TO247
32360
ONSEMI/安森美全新特价MBR6045WT即刻询购立享优惠#长期有货
ON
23+
TO-247
10
正规渠道,只有原装!
IR
TO-3P
3200
原装长期供货!
VISHAY
25+
TO-247
20540
保证进口原装现货假一赔十
ON
24+
SMD
5500
长期供应原装现货实单可谈
ON
23+
NA
6800
原装正品,力挺实单
IR
22+
TO-247
3000
原装正品,支持实单
VISHAY
21+
TO-247
6880
只做原装,质量保证

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