MBR6045WT价格

参考价格:¥14.4704

型号:MBR6045WTG 品牌:ON 备注:这里有MBR6045WT多少钱,2025年最近7天走势,今日出价,今日竞价,MBR6045WT批发/采购报价,MBR6045WT行情走势销售排行榜,MBR6045WT报价。
型号 功能描述 生产厂家 企业 LOGO 操作
MBR6045WT

60 Amp Schottky Barrier Rectifier 45 Volts

Features • High Surge Capacity • Low Power Loss, High Efficiency • High Current Capability, Low VF • Metal of silicon Rectifier, majority Carrier Conduction • Guard Ring For Transient Protection • Plastic Package Has UL Flammability Classification 94V-0

MCC

MBR6045WT

SCHOTTKY RECIFIER

DESCRIPTION The MBR6045WT center tap Schottky rectifier has been optimized for very low forward voltage drop, with moderate leakage. The proprietary barrier technology allows for reliable operation up to 150 °C junction temperature. Typical applications are in switching power supplies, converters

IRF

MBR6045WT

Schottky Rectifier, 2 x 30 A

DESCRIPTION The MBR6045WT center tap Schottky rectifier has been optimized for very low forward voltage drop, with moderate leakage. The proprietary barrier technology allows for reliable operation up to 150 °C junction temperature. Typical applications are in switching power supplies, converte

VishayVishay Siliconix

威世威世科技公司

MBR6045WT

SWITCHMODE??Power Rectifier

SWITCHMODE™ Power Rectifier The SWITCHMODE power rectifier employs the use of the Schottky Barrier principle with a Platinum barrier metal. This state-of-the-art device has the following features: • Dual Diode Construction — Terminals 1 and 3 May Be Connected for Parallel Operation at Full Ratin

Motorola

摩托罗拉

MBR6045WT

SWITCHMODE Power Rectifier

SWITCHMODE™ Power Rectifier The SWITCHMODE power rectifier employs the use of the Schottky Barrier principle with a Platinum barrier metal. Features • Dual Diode Construction; Terminals 1 and 3 May Be Connected for Parallel Operation at Full Rating • 45 V Blocking Voltage • Low Forward Voltag

ONSEMI

安森美半导体

MBR6045WT

Schottky Barrier Rectifier

FEATURES • Low Forward Voltage • Guard -Ring for Stress Protection • High Surge Capability • 175℃ Operating Junction Temperature • Pb-Free Package is Available • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation

ISC

无锡固电

MBR6045WT

Low forward voltage drop

Description Littelfuse MBR series Schottky Barrier Rectifier is designed to meet the general requirements of commercial applications by providing high temperature, low leakage and low VF products. It is suitable for high frequency switching mode power supply, free-wheeling diodes and polarity pr

Littelfuse

力特

MBR6045WT

60A SCHOTTKY RECTIFIER

60A SCHOTTKY RECTIFIER Available Non-RoHS (standard) or RoHS compliant (add PBF suffix). Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number.

DIGITRON

MBR6045WT

60 Amp Schottky Barrier Rectifier 45 Volts

Features • High Surge Capacity • Low Power Loss, High Efficiency • High Current Capability, Low VF • Metal of silicon Rectifier, majority Carrier Conduction • Guard Ring For Transient Protection • Plastic Package Has UL Flammability Classification 94V-0

KERSEMI

MBR6045WT

SCHOTTKY RECTIFIER

Features: • 150°C TJ operation • Center tap TO-247AD package • Low forward voltage drop • High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance • High frequency operation • Guard ring for enhanced ruggedness and long term reliability • Th

SMC

桑德斯微电子

MBR6045WT

封装/外壳:TO-247-3 包装:管件 描述:DIODE ARRAY SCHOTTKY 45VTO247AC 分立半导体产品 二极管 - 整流器 - 阵列

ETC

知名厂家

MBR6045WT

封装/外壳:TO-247-3 包装:卷带(TR)剪切带(CT)Digi-Reel® 得捷定制卷带 描述:DIODE ARRAY SCHOTTKY 45V TO247AD 分立半导体产品 二极管 - 整流器 - 阵列

SMCDIODE

桑德斯微电子

MBR6045WT

肖特基二极管

SMC

桑德斯微电子

MBR6045WT

硅肖特基二极管

Littelfuse

力特

MBR6045WT

SCHOTTKY RECIFIER

Infineon

英飞凌

Switch Mode Power Rectifier

SWITCHMODE™ Power Rectifier The SWITCHMODE power rectifier employs the use of the Schottky Barrier principle with a Platinum barrier metal. Features • Dual Diode Construction; Terminals 1 and 3 May Be Connected for Parallel Operation at Full Rating • 45 V Blocking Voltage • Low Forward Voltag

ONSEMI

安森美半导体

SWITCHMODE Power Rectifier

SWITCHMODE™ Power Rectifier The SWITCHMODE power rectifier employs the use of the Schottky Barrier principle with a Platinum barrier metal. Features • Dual Diode Construction; Terminals 1 and 3 May Be Connected for Parallel Operation at Full Rating • 45 V Blocking Voltage • Low Forward Voltag

ONSEMI

安森美半导体

Schottky Rectifier, 2 x 30 A

文件:168.86 Kbytes Page:7 Pages

VishayVishay Siliconix

威世威世科技公司

SCHOTTKY RECTIFIER

文件:203.03 Kbytes Page:6 Pages

IRF

Schottky Rectifier, 2 x 30 A

文件:168.86 Kbytes Page:7 Pages

VishayVishay Siliconix

威世威世科技公司

Schottky Rectifier, 2 x 30 A

文件:119.24 Kbytes Page:6 Pages

VishayVishay Siliconix

威世威世科技公司

Schottky Rectifier, 2 x 30 A

文件:168.86 Kbytes Page:7 Pages

VishayVishay Siliconix

威世威世科技公司

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 14.5A@ TC=25℃ ·Drain Source Voltage : VDSS= 600V(Min) ·Static Drain-Source On-Resistance : RDS(on) =0.45Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC

ISC

无锡固电

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 17A@ TC=25℃ ·Drain Source Voltage : VDSS=600V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.45Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-D

ISC

无锡固电

N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS

POWER MOS IV® N- CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS

ADPOW

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 17A@ TC=25℃ ·Drain Source Voltage : VDSS= 600V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.45Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-

ISC

无锡固电

SINGLE POLE, SINGLE THROW CONNECTORIZED SWITCHES

文件:40.48 Kbytes Page:1 Pages

MICRONETICS

微盟电子

MBR6045WT产品属性

  • 类型

    描述

  • 型号

    MBR6045WT

  • 功能描述

    肖特基二极管与整流器 60A 45V

  • RoHS

  • 制造商

    Skyworks Solutions, Inc.

  • 产品

    Schottky Diodes

  • 峰值反向电压

    2 V

  • 正向连续电流

    50 mA

  • 配置

    Crossover Quad

  • 正向电压下降

    370 mV

  • 最大功率耗散

    75 mW

  • 工作温度范围

    - 65 C to + 150 C

  • 安装风格

    SMD/SMT

  • 封装/箱体

    SOT-143

  • 封装

    Reel

更新时间:2025-10-27 23:00:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
ON(安森美)
24+
标准封装
13748
全新原装正品/价格优惠/质量保障
Vishay(威世)
24+
标准封装
9343
原厂直销,大量现货库存,交期快。价格优,支持账期
ON
2016+
TO-247
2980
公司只做原装,假一罚十,可开17%增值税发票!
ONSEMI/安森美
25+
TO-247
54648
百分百原装现货 实单必成
ONSEMI/安森美
25+
TO247
32360
ONSEMI/安森美全新特价MBR6045WT即刻询购立享优惠#长期有货
ON
1838+
TO247
11
一级代理,专注军工、汽车、医疗、工业、新能源、电力
三年内
1983
只做原装正品
ON
2025+
TO-3P
3785
全新原厂原装产品、公司现货销售
ON/安森美
2023+
TO-247
6836
全新正品旗舰店,价格绝对优势
Vishay(威世)
23+
NA
20094
正纳10年以上分销经验原装进口正品做服务做口碑有支持

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