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MBR6045PT价格
参考价格:¥26.3973
型号:MBR6045PT 品牌:Diodes 备注:这里有MBR6045PT多少钱,2025年最近7天走势,今日出价,今日竞价,MBR6045PT批发/采购报价,MBR6045PT行情走势销售排行榜,MBR6045PT报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
MBR6045PT | 60A SCHOTTKY BARRIER RECTIFIER Features • Schottky Barrier Chip • Guard Ring Die Construction for Transient Protection • Low Power Loss, High Efficiency • High Surge Capability • High Current Capability and Low Forward Voltage Drop • For Use in Low Voltage, High Frequency Inverters, Free Wheeling, and Polarity Protection | DIODES 美台半导体 | ||
MBR6045PT | 60 Amp Schottky Barrier Rectifier 45 Volts Features • High Surge Capacity • Low Power Loss, High Efficiency • High Current Capability, Low VF • Metal of silicon Rectifier, majority Carrier Conduction • Guard Ring For Transient Protection • Plastic Package Has UL Flammability Classification 94V-0 | MCC | ||
MBR6045PT | 60 Amp Schottky Barrier Rectifier 30 to 45 Volts Features · Meatl of Silicon Rectifier, Majority Conducton · Guard ring for transient protection · Low Forward Voltage Drop · High Current Capability, High Efficiency · Low Power Loss | MCC | ||
MBR6045PT | Wide Temperature Range and High Tjm Schottky Barrier Rectifiers Wide Temperature Range and High Tjm Schottky Barrier Rectifiers FEATURES * Metal of silicon rectifier, majority carrier conducton * Guard ring for transient protection * Low power loss, high efficiency * High current capability, low VF * High surge capacity * Plastic package has UL flammabi | SIRECTIFIER 矽莱克电子 | ||
MBR6045PT | 60.0 AMPS. Schottky Barrier Rectifiers FEATURES - Low power loss, high efficiency - Guardring for overvoltage protection - High surge current capability - UL Recognized File # E-326243 - Compliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC - Halogen-free according to IEC 61249-2-21 definition | TSC 台湾半导体 | ||
MBR6045PT | 60 AMPERES SCHOTTKY BARRIER RECTIFIERS VOLTAGE 20 to 100 Volts CURRENT 60 Amperes FEATURES • Plastic package has Underwriters Laboratory Flammability Classification 94V-O. Flame Retardant Epoxy Molding Compound. • Metal silicon junction, majority carrier conduction • Low power loss, high efficiency. • High current capabili | PANJIT 強茂 | ||
MBR6045PT | SWITCHMODE??Power Rectifier Features and Benefits • Low Forward Voltage • Low Power Loss/High Efficiency • High Surge Capacity • 175°C Operating Junction Temperature • 60 A Total (30 A Per Diode Leg) • Pb−Free Packages are Available* Applications • Power Supply – Output Rectification • Power Management • Instrument | ONSEMI 安森美半导体 | ||
MBR6045PT | SCHOTTKY BARRIER RECTIFIERS VOLTAGE 20 to 100 Volts CURRENT 60 Amperes FEATURES • Plastic package has Underwriters Laboratory Flammability Classification 94V-O. Flame Retardant Epoxy Molding Compound. • Metal silicon junction, majority carrier conduction • Low power loss, high efficiency. • High current capabili | PANJIT 強茂 | ||
MBR6045PT | SCHOTTKY BARRIER RECTIFIERS VOLTAGE RANGE: 30 - 100 V CURRENT: 60 A FEATURES ◇ High surge capacity. ◇ For use in low voltage, high frequency inverters, free wheeling, and polarity protection applications. ◇ Metal silicon junction, majority carrier conduction. ◇ High current capacity, low forward voltage drop. ◇ Guard r | DSK | ||
MBR6045PT | SWITCH MODE??Power Rectifier The SWITCHMODE power rectifier employs the use of the Schottky Barrier principle with a Platinum barrier metal. This state-of-the-art device has the following features: • Dual Diode Construction — Terminals 1 and 3 MayBe Connected for Parallel Operation at Full Rating • 45 Volt Blocking Voltage | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | ||
MBR6045PT | 60A SCHOTTKY RECTIFIER 60A SCHOTTKY RECTIFIER | DIGITRON | ||
MBR6045PT | Schottky Barrier Rectifiers Features ◇ High surge capacity. ◇ For use in low voltage, high frequency inverters, free wheeling, and polarity protection applications. ◇ Metal silicon junction, majority carrier conduction. ◇ High current capacity, low forward voltage drop. ◇ Guard ring for over voltage protection. | LUGUANG 鲁光电子 | ||
MBR6045PT | Schottky Barrier Rectifier FEATURES • Low Forward Voltage • Low Power Loss,High Efficiency • High Surge Capability • 175℃ Operating Junction Temperature • Pb-Free Package is Available • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS • Power Sup | ISC 无锡固电 | ||
MBR6045PT | SWITCHMODE??Power Rectifier The SWITCHMODE power rectifier employs the use of the Schottky Barrier principle with a Platinum barrier metal. This state-of-the-art device has the following features: • Dual Diode Construction — Terminals 1 and 3 May Be Connected for Parallel Operation at Full Rating • 45 Volt Blocking Voltage | Motorola 摩托罗拉 | ||
MBR6045PT | 60 Amp Schottky Barrier Rectifier 45 Volts Features • High Surge Capacity • Low Power Loss, High Efficiency • High Current Capability, Low VF • Metal of silicon Rectifier, majority Carrier Conduction • Guard Ring For Transient Protection • Plastic Package Has UL Flammability Classification 94V-0 | KERSEMI | ||
MBR6045PT | 60Ampere Heatsink Dual Common Cathode Schottky Barrier Rectifier Diodes Features Low forward voltage drop ThinkiSemi matured planar process schottky High current capability High surge current capability Low reverse leakage current Application Inverter/UPS Plating Power Supply/SMPS Car Audio Amplifier and Sound Device System | THINKISEMI 思祁半导体 | ||
MBR6045PT | SCHOTTKY BARRIER RECTIFIERS Feaures High efficiencty operation and Low power loss High forward surge capability Lead free in compliance with EU RoHS 2011/65/EU directive Green molding compound as per IEC61249 Std..(Halogen Free) Low stored charge majority carrier conduction | SUNMATE 森美特 | ||
MBR6045PT | High Tjm Low IRRM Schottky Barrier Diodes 文件:133.82 Kbytes Page:2 Pages | SIRECTIFIER 矽莱克电子 | ||
MBR6045PT | 封装/外壳:TO-218-3 包装:管件 描述:DIODE ARRAY SCHOTTKY 45V SOT93 分立半导体产品 二极管 - 整流器 - 阵列 | ONSEMI 安森美半导体 | ||
MBR6045PT | 封装/外壳:TO-3P-3,SC-65-3 包装:管件 描述:DIODE ARRAY SCHOTTKY 45V TO3P 分立半导体产品 二极管 - 整流器 - 阵列 | DIODES 美台半导体 | ||
MBR6045PT | SCHOTTKY BARRIER RECTIFIER 60A 45V | LXMICRO 广东凌讯微电子 | ||
MBR6045PT | 功率肖特基二极管(IF ≧ 1A) | PANJIT 強茂 | ||
MBR6045PT | Schottky | DIODES 美台半导体 | ||
MBR6045PT | Schottky Barrier Rectifiers Reverse Voltage 40 to 200 Volts, Forward Current 60A 文件:393.83 Kbytes Page:2 Pages | FS | ||
MBR6045PT | 60.0A SCHOTTKY BARRIER DIODE 文件:166.76 Kbytes Page:2 Pages | ZSELEC 淄博圣诺 | ||
MBR6045PT | Dual Common Cathode Schottky Rectifier 文件:222.12 Kbytes Page:4 Pages | TSC 台湾半导体 | ||
MBR6045PT | Dual Common-Cathode Schottky Rectifier 文件:297.34 Kbytes Page:6 Pages | NELLSEMI 尼尔半导体 | ||
MBR6045PT | 60 AMPS. Schottky Barrier Rectifiers 文件:479.39 Kbytes Page:2 Pages | TSC 台湾半导体 | ||
MBR6045PT | 60A SCHOTTKY BARRIER RECTIFIER 文件:65.62 Kbytes Page:3 Pages | DIODES 美台半导体 | ||
MBR6045PT | 60 AMPS. Schottky Barrier Rectifiers 文件:369.39 Kbytes Page:2 Pages | TSC 台湾半导体 | ||
SWITCHMODE??Power Rectifier Features and Benefits • Low Forward Voltage • Low Power Loss/High Efficiency • High Surge Capacity • 175°C Operating Junction Temperature • 60 A Total (30 A Per Diode Leg) • Pb−Free Packages are Available* Applications • Power Supply – Output Rectification • Power Management • Instrument | ONSEMI 安森美半导体 | |||
Schottky Barrier Rectifier Reverse Voltage: 30 to 100V Forward Current: 60.0A RoHS Device Features - Guard ring for overvoltage protection. - Low power loss, high efficiency. - Low reverse leakage current. - High Surge Current Capability. | COMCHIP 典琦 | |||
isc N-Channel MOSFET Transistor FEATURES ·Drain Current : ID= 14.5A@ TC=25℃ ·Drain Source Voltage : VDSS= 600V(Min) ·Static Drain-Source On-Resistance : RDS(on) =0.45Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC | ISC 无锡固电 | |||
isc N-Channel MOSFET Transistor FEATURES ·Drain Current : ID= 17A@ TC=25℃ ·Drain Source Voltage : VDSS=600V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.45Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-D | ISC 无锡固电 | |||
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS POWER MOS IV® N- CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS | ADPOW | |||
isc N-Channel MOSFET Transistor FEATURES ·Drain Current : ID= 17A@ TC=25℃ ·Drain Source Voltage : VDSS= 600V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.45Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC- | ISC 无锡固电 | |||
SINGLE POLE, SINGLE THROW CONNECTORIZED SWITCHES 文件:40.48 Kbytes Page:1 Pages | MICRONETICS 微盟电子 |
MBR6045PT产品属性
- 类型
描述
- 型号
MBR6045PT
- 功能描述
肖特基二极管与整流器 60A 45V
- RoHS
否
- 制造商
Skyworks Solutions, Inc.
- 产品
Schottky Diodes
- 峰值反向电压
2 V
- 正向连续电流
50 mA
- 配置
Crossover Quad
- 正向电压下降
370 mV
- 最大功率耗散
75 mW
- 工作温度范围
- 65 C to + 150 C
- 安装风格
SMD/SMT
- 封装/箱体
SOT-143
- 封装
Reel
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
YANGJIE(扬杰) |
24+ |
TO247 |
8215 |
现货供应,当天可交货!免费送样,原厂技术支持!!! |
|||
LITEON/光宝 |
24+ |
NA/ |
75 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
|||
TOSHIBA |
23+ |
SOT-4 |
12000 |
全新原装假一赔十 |
|||
DIODES/美台 |
25+ |
T0247 |
54648 |
百分百原装现货 实单必成 欢迎询价 |
|||
TSC/台湾半导体 |
24+ |
TO3P |
990000 |
明嘉莱只做原装正品现货 |
|||
LT |
24+/25+ |
N/A |
100 |
全新原装现货 |
|||
LITEON/光宝 |
25+ |
TO-247 |
32360 |
LITEON/光宝全新特价MBR6045PT即刻询购立享优惠#长期有货 |
|||
ON |
12+ |
TO247 |
32 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
LITEON/光宝 |
2450+ |
TO-247 |
9850 |
只做原装正品现货或订货假一赔十! |
|||
HE |
21+ |
TO247 |
1574 |
MBR6045PT规格书下载地址
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