VP0106价格
参考价格:¥2.0727
型号:VP0106N3 品牌:Supertex 备注:这里有VP0106多少钱,2026年最近7天走势,今日出价,今日竞价,VP0106批发/采购报价,VP0106行情走势销售排行榜,VP0106报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
VP0106 | P-Channel Enhancement-Mode Vertical DMOS FETs Advanced DMOS Technology These enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input impedan | SUTEX | ||
VP0106 | P-Channel Enhancement-Mode Vertical DMOS FET General Description The VP0106 low-threshold Enhancement-mode (normally-off) transistors use a vertical DMOS structure and a well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input imped | MICROCHIP 微芯科技 | ||
VP0106 | MOSFET, P-Channel Enhancement-Mode, -60V, 8.0 Ohm This enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and positive temperature coefficient in Free from secondary breakdown \nLow power drive requirement \nEase of paralleling \nLow CISS and fast switching speeds \nExcellent thermal stability \nIntegral source-drain diode \nHigh input impedance and high gain; | MICROCHIP 微芯科技 | ||
VP0106 | P-Channel Enhancement-Mode Vertical DMOS FETs 文件:659.86 Kbytes Page:5 Pages | SUTEX | ||
P-Channel Enhancement-Mode P-Channel Enhancement-Mode Vertical DMOS Power FETs | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | |||
P-Channel Enhancement-Mode Vertical DMOS FETs Advanced DMOS Technology These enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input impedan | SUTEX | |||
P-Channel Enhancement-Mode P-Channel Enhancement-Mode Vertical DMOS Power FETs | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | |||
P-Channel Enhancement-Mode Vertical DMOS FET General Description The VP0106 low-threshold Enhancement-mode (normally-off) transistors use a vertical DMOS structure and a well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input imped | MICROCHIP 微芯科技 | |||
P-Channel Enhancement-Mode P-Channel Enhancement-Mode Vertical DMOS Power FETs | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | |||
P-Channel Enhancement-Mode P-Channel Enhancement-Mode Vertical DMOS Power FETs | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | |||
P-Channel Enhancement-Mode P-Channel Enhancement-Mode Vertical DMOS Power FETs | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | |||
P-Channel Enhancement-Mode P-Channel Enhancement-Mode Vertical DMOS Power FETs | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | |||
P-Channel Enhancement-Mode P-Channel Enhancement-Mode Vertical DMOS Power FETs | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | |||
P-Channel Enhancement-Mode Vertical DMOS FETs 文件:659.86 Kbytes Page:5 Pages | SUTEX | |||
-60 V, 8 ohm, P-channel enhancement-mode D-MOS power FET | Topaz | |||
P-Channel Enhancement-Mode Vertical DMOS FETs 文件:225.63 Kbytes Page:4 Pages | SUTEX | |||
P-Channel Enhancement-Mode Vertical DMOS FETs 文件:659.86 Kbytes Page:5 Pages | SUTEX | |||
P-Channel Enhancement-Mode Vertical DMOS FETs 文件:659.86 Kbytes Page:5 Pages | SUTEX | |||
P-Channel Enhancement-Mode Vertical DMOS FETs 文件:659.86 Kbytes Page:5 Pages | SUTEX | |||
P-Channel Enhancement-Mode Vertical DMOS FETs 文件:659.86 Kbytes Page:5 Pages | SUTEX | |||
P-Channel Enhancement-Mode Vertical DMOS FETs 文件:659.86 Kbytes Page:5 Pages | SUTEX | |||
P-Channel Enhancement-Mode Vertical DMOS FETs 文件:659.86 Kbytes Page:5 Pages | SUTEX | |||
Trans MOSFET P-CH 60V 0.25A 3-Pin TO-92 | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | |||
N-Channel Enhancement-Mode Vertical DMOS FETs Features ■ Low threshold — 2.0V max. ■ High input impedance ■ Low input capacitance — 50pF typical ■ Fast switching speeds ■ Low on resistance ■ Free from secondary breakdown ■ Low input and output leakage ■ Complementary N- and P-channel devices | SUTEX | |||
N-CHANNEL ENHANCEMENT-MODE D-MOS POWER FETs [TOPAZ SEMICONDUCTOR] N-CHANNEL ENHANCEMENT-MODE D-MOS POWER FETs | ETCList of Unclassifed Manufacturers 未分类制造商 | |||
N-Channel Enhancement-Mode Vertical DMOS FET Advanced DMOS Technology These enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input impedan | SUTEX | |||
N-Channel Enhancement-Mode Vertical DMOS Power FETs Quad Array? N-Channel Enhancement-Mode Vertical DMOS Power FETs Quad Array | SUTEX |
VP0106产品属性
- 类型
描述
- BVdss min (V):
-60
- Rds (on) max (Ohms):
8
- Vgs(th) max (V):
-3.5
- CISSmax (pF):
60
- Packages:
3\\TO-92
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
SILICONI/矽睿科技 |
专业铁帽 |
CAN3 |
67500 |
铁帽原装主营-可开原型号增税票 |
|||
SI |
18+ |
TO-92 |
85600 |
保证进口原装可开17%增值税发票 |
|||
SI |
25+ |
DIP14 |
7 |
全新原装正品支持含税 |
|||
MICROCHIP/微芯 |
2022+ |
5000 |
只做原装,价格优惠,长期供货。 |
||||
MICROCHIP/微芯 |
22+ |
TO-92-3 |
12245 |
现货,原厂原装假一罚十! |
|||
SI |
25+ |
1050 |
公司优势库存 热卖中!! |
||||
Microchip Technology / Atmel |
25+ |
TO-92-3 |
6843 |
样件支持,可原厂排单订货! |
|||
SUPERTEX |
24+ |
TO-92 |
4200 |
||||
SILICON |
专业铁帽 |
CAN3 |
5 |
原装铁帽专营,代理渠道量大可订货 |
|||
MICROCHIP(美国微芯) |
2447 |
TO-92-3 |
31500 |
1000个/袋一级代理专营品牌!原装正品,优势现货,长 |
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VP0106规格书下载地址
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DdatasheetPDF页码索引
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