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VP0106N3-G价格
参考价格：￥3.8896
型号：VP0106N3-G 品牌：Microchip 备注：这里有VP0106N3-G多少钱，2025年最近7天走势，今日出价，今日竞价，VP0106N3-G批发/采购报价，VP0106N3-G行情走势销售排行榜，VP0106N3-G报价。| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
VP0106N3-G | P-Channel Enhancement-Mode Vertical DMOS FET General Description The VP0106 low-threshold Enhancement-mode (normally-off) transistors use a vertical DMOS structure and a well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input imped | Microchip 微芯科技 |   | |
VP0106N3-G | P-Channel Enhancement-Mode Vertical DMOS FETs 文件：659.86 Kbytes Page：5 Pages | SUTEX | | |
P-Channel Enhancement-Mode Vertical DMOS FETs 文件：659.86 Kbytes Page：5 Pages | SUTEX | | ||
P-Channel Enhancement-Mode Vertical DMOS FETs 文件：659.86 Kbytes Page：5 Pages | SUTEX | | ||
P-Channel Enhancement-Mode Vertical DMOS FETs 文件：659.86 Kbytes Page：5 Pages | SUTEX | | ||
P-Channel Enhancement-Mode Vertical DMOS FETs 文件：659.86 Kbytes Page：5 Pages | SUTEX | | ||
P-Channel Enhancement-Mode Vertical DMOS FETs 文件：659.86 Kbytes Page：5 Pages | SUTEX | | ||
N-CHANNEL ENHANCEMENT-MODE D-MOS POWER FETs [TOPAZ SEMICONDUCTOR] N-CHANNEL ENHANCEMENT-MODE D-MOS POWER FETs | ETC1List of Unclassifed Manufacturers etc未分类制造商未分类制造商 | | ||
N-Channel Enhancement-Mode Vertical DMOS FETs Features ■ Low threshold — 2.0V max. ■ High input impedance ■ Low input capacitance — 50pF typical ■ Fast switching speeds ■ Low on resistance ■ Free from secondary breakdown ■ Low input and output leakage ■ Complementary N- and P-channel devices | SUTEX | | ||
N-Channel Enhancement-Mode N-Channel Enhancement-Mode Vertical DMOS Power FETs | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 | | ||
N-Channel Enhancement-Mode Vertical DMOS FET Advanced DMOS Technology These enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input impedan | SUTEX | | ||
N-Channel Enhancement-Mode Vertical DMOS FET 文件：640.15 Kbytes Page：5 Pages | SUTEX | |
VP0106N3-G产品属性
- 类型
描述
- 型号
VP0106N3-G
- 功能描述
MOSFET 60V 8Ohm
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS（导通）
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
MICROCHIP(美国微芯) |
24+ |
TO-92 |
8498 |
支持大陆交货,美金交易。原装现货库存。 |
|||
SUPERTEX |
24+ |
TO-92 |
3100 |
||||
ON/安森美 |
23+ |
DPAK-3 |
69820 |
终端可以免费供样,支持BOM配单! |
|||
24+ |
N/A |
65000 |
一级代理-主营优势-实惠价格-不悔选择 |
||||
SUPERTEX |
2022+ |
TO-220 |
12888 |
原厂代理 终端免费提供样品 |
|||
SILICONI |
专业铁帽 |
CAN3 |
500 |
原装铁帽专营,代理渠道量大可订货 |
|||
Microchip(微芯) |
24+ |
NA/ |
8735 |
原厂直销,现货供应,账期支持! |
|||
MICROCHIP/美国微芯 |
24+ |
TO-92(TO-92-3) |
30000 |
原装正品公司现货,假一赔十! |
|||
MICROCHIP/美国微芯 |
21+ |
TO-92(TO-92-3) |
30000 |
全新原装 现货 价优 |
|||
SILICONI/矽睿科技 |
23+ |
CAN3 |
11200 |
原厂授权一级代理、全球订货优势渠道、可提供一站式BO |
VP0106N3-G芯片相关品牌
VP0106N3-G规格书下载地址
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2020-4-12
DdatasheetPDF页码索引
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