VN0106价格
参考价格:¥3.1950
型号:VN0106N3-G 品牌:Microchip Technology 备注:这里有VN0106多少钱,2026年最近7天走势,今日出价,今日竞价,VN0106批发/采购报价,VN0106行情走势销售排行榜,VN0106报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
VN0106 | MOSFET, N-Channel Enhancement-Mode, 60V, 3.0 Ohm This enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and positive temperature coefficient in Free from secondary breakdown \nLow power drive requirement \nEase of paralleling \nLow CISS and fast switching speeds \nExcellent thermal stability \nIntegral source-drain diode \nHigh input impedance and high gain; | MICROCHIP 微芯科技 | ||
VN0106 | N-Channel Enhancement-Mode Vertical DMOS FET Advanced DMOS Technology These enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input impedan | SUTEX | ||
VN0106 | N-Channel Enhancement-Mode Vertical DMOS FET General Description This enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicongate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and pos | SUTEX | ||
N-Channel Enhancement-Mode N-Channel Enhancement-Mode Vertical DMOS Power FETs | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | |||
N-Channel Enhancement-Mode N-Channel Enhancement-Mode Vertical DMOS Power FETs | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | |||
N-Channel Enhancement-Mode Vertical DMOS FET Advanced DMOS Technology These enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input impedan | SUTEX | |||
N-Channel Enhancement-Mode Vertical DMOS FET General Description This enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicongate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and pos | SUTEX | |||
N-Channel Enhancement-Mode N-Channel Enhancement-Mode Vertical DMOS Power FETs | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | |||
N-Channel Enhancement-Mode N-Channel Enhancement-Mode Vertical DMOS Power FETs | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | |||
N-Channel Enhancement-Mode N-Channel Enhancement-Mode Vertical DMOS Power FETs | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | |||
N-Channel Enhancement-Mode N-Channel Enhancement-Mode Vertical DMOS Power FETs | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | |||
N-Channel Enhancement-Mode N-Channel Enhancement-Mode Vertical DMOS Power FETs | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | |||
N-Channel Enhancement-Mode Vertical DMOS Power FETs Quad Array? N-Channel Enhancement-Mode Vertical DMOS Power FETs Quad Array | SUTEX | |||
60 V, 3 ohm, N-channel enhancement-mode D-MOS power FET | Topaz | |||
MOSFET N-CH Enhancmnt Mode MOSFET | MICROCHIP 微芯科技 | |||
N-Channel Enhancement-Mode Vertical DMOS FETs Features ■ Low threshold — 2.0V max. ■ High input impedance ■ Low input capacitance — 50pF typical ■ Fast switching speeds ■ Low on resistance ■ Free from secondary breakdown ■ Low input and output leakage ■ Complementary N- and P-channel devices | SUTEX | |||
N-CHANNEL ENHANCEMENT-MODE D-MOS POWER FETs [TOPAZ SEMICONDUCTOR] N-CHANNEL ENHANCEMENT-MODE D-MOS POWER FETs | ETCList of Unclassifed Manufacturers 未分类制造商 | |||
P-Channel Enhancement-Mode Vertical DMOS FETs Advanced DMOS Technology These enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input impedan | SUTEX |
VN0106产品属性
- 类型
描述
- BVdss min (V):
60
- Rds (on) max (Ohms):
3.0
- CISSmax (pF):
65
- Vgs(th) max (V):
2.4
- Packages:
3\\TO-92
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
SIGNETI |
23+ |
DIP-14P |
8560 |
受权代理!全新原装现货特价热卖! |
|||
Microchip Technology / Atmel |
25+ |
TO-92-3 |
6843 |
样件支持,可原厂排单订货! |
|||
Microchip Technology / Atmel |
25+ |
TO-92-3 |
6895 |
正规渠道,免费送样。支持账期,BOM一站式配齐 |
|||
SILICONI/矽睿科技 |
专业铁帽 |
CAN3 |
67500 |
铁帽原装主营-可开原型号增税票 |
|||
MICROCHIP/美国微芯 |
24+ |
TO-92(TO-92-3) |
6000 |
全新原装深圳仓库现货有单必成 |
|||
SIGNETICS |
23+ |
DIP-14P |
400 |
全新原装正品现货,支持订货 |
|||
Supertek |
25+ |
70 |
公司优势库存 热卖中!! |
||||
MICROCHIP/美国微芯 |
21+ |
TO-92(TO-92-3) |
10000 |
只做原装,质量保证 |
|||
MICROCHIP/微芯 |
23+ |
TO-92-3 |
11200 |
原厂授权一级代理、全球订货优势渠道、可提供一站式BO |
|||
SILICONI |
专业铁帽 |
CAN3 |
500 |
原装铁帽专营,代理渠道量大可订货 |
VN0106规格书下载地址
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DdatasheetPDF页码索引
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