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VN0106价格

参考价格:¥3.1950

型号:VN0106N3-G 品牌:Microchip Technology 备注:这里有VN0106多少钱,2026年最近7天走势,今日出价,今日竞价,VN0106批发/采购报价,VN0106行情走势销售排行榜,VN0106报价。
型号 功能描述 生产厂家 企业 LOGO 操作
VN0106

MOSFET, N-Channel Enhancement-Mode, 60V, 3.0 Ohm

This enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and positive temperature coefficient in Free from secondary breakdown \nLow power drive requirement \nEase of paralleling \nLow CISS and fast switching speeds \nExcellent thermal stability \nIntegral source-drain diode \nHigh input impedance and high gain;

MICROCHIP

微芯科技

VN0106

N-Channel Enhancement-Mode Vertical DMOS FET

Advanced DMOS Technology These enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input impedan

SUTEX

VN0106

N-Channel Enhancement-Mode Vertical DMOS FET

General Description This enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicongate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and pos

SUTEX

N-Channel Enhancement-Mode

N-Channel Enhancement-Mode Vertical DMOS Power FETs

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

N-Channel Enhancement-Mode

N-Channel Enhancement-Mode Vertical DMOS Power FETs

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

N-Channel Enhancement-Mode Vertical DMOS FET

Advanced DMOS Technology These enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input impedan

SUTEX

N-Channel Enhancement-Mode Vertical DMOS FET

General Description This enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicongate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and pos

SUTEX

N-Channel Enhancement-Mode

N-Channel Enhancement-Mode Vertical DMOS Power FETs

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

N-Channel Enhancement-Mode

N-Channel Enhancement-Mode Vertical DMOS Power FETs

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

N-Channel Enhancement-Mode

N-Channel Enhancement-Mode Vertical DMOS Power FETs

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

N-Channel Enhancement-Mode

N-Channel Enhancement-Mode Vertical DMOS Power FETs

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

N-Channel Enhancement-Mode

N-Channel Enhancement-Mode Vertical DMOS Power FETs

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

N-Channel Enhancement-Mode Vertical DMOS Power FETs Quad Array?

N-Channel Enhancement-Mode Vertical DMOS Power FETs Quad Array

SUTEX

60 V, 3 ohm, N-channel enhancement-mode D-MOS power FET

Topaz

MOSFET N-CH Enhancmnt Mode MOSFET

MICROCHIP

微芯科技

N-Channel Enhancement-Mode Vertical DMOS FETs

Features ■ Low threshold — 2.0V max. ■ High input impedance ■ Low input capacitance — 50pF typical ■ Fast switching speeds ■ Low on resistance ■ Free from secondary breakdown ■ Low input and output leakage ■ Complementary N- and P-channel devices

SUTEX

N-CHANNEL ENHANCEMENT-MODE D-MOS POWER FETs

[TOPAZ SEMICONDUCTOR] N-CHANNEL ENHANCEMENT-MODE D-MOS POWER FETs

ETCList of Unclassifed Manufacturers

未分类制造商

P-Channel Enhancement-Mode Vertical DMOS FETs

Advanced DMOS Technology These enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input impedan

SUTEX

VN0106产品属性

  • 类型

    描述

  • BVdss min (V):

    60

  • Rds (on) max (Ohms):

    3.0

  • CISSmax (pF):

    65

  • Vgs(th) max (V):

    2.4

  • Packages:

    3\\TO-92

更新时间:2026-5-15 11:32:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
SIGNETI
23+
DIP-14P
8560
受权代理!全新原装现货特价热卖!
Microchip Technology / Atmel
25+
TO-92-3
6843
样件支持,可原厂排单订货!
Microchip Technology / Atmel
25+
TO-92-3
6895
正规渠道,免费送样。支持账期,BOM一站式配齐
SILICONI/矽睿科技
专业铁帽
CAN3
67500
铁帽原装主营-可开原型号增税票
MICROCHIP/美国微芯
24+
TO-92(TO-92-3)
6000
全新原装深圳仓库现货有单必成
SIGNETICS
23+
DIP-14P
400
全新原装正品现货,支持订货
Supertek
25+
70
公司优势库存 热卖中!!
MICROCHIP/美国微芯
21+
TO-92(TO-92-3)
10000
只做原装,质量保证
MICROCHIP/微芯
23+
TO-92-3
11200
原厂授权一级代理、全球订货优势渠道、可提供一站式BO
SILICONI
专业铁帽
CAN3
500
原装铁帽专营,代理渠道量大可订货

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