OMNIFET FULLY AUTOPROTECTED POWER MOSFET

Description The VNP35N07-E, VNB35N07-E and VNV35N07-E are monolithic devices made using STMicroelectronics VIPower® technology, intended for replacement of standard Power MOSFETs in DC to 50 KHz applications. Built-in thermal shutdown, linear current limitation and overvoltage clamp protect the

OMNIFET: fully autoprotected Power MOSFET

Description The VNP35N07-E, VNB35N07-E and VNV35N07-E are monolithic devices made using STMicroelectronics VIPower® technology, intended for replacement of standard Power MOSFETs in DC to 50 KHz applications. Built-in thermal shutdown, linear current limitation and overvoltage clamp protect

OMNIFET: fully autoprotected Power MOSFET

Description The VNP35N07-E, VNB35N07-E and VNV35N07-E are monolithic devices made using STMicroelectronics VIPower® technology, intended for replacement of standard Power MOSFETs in DC to 50 KHz applications. Built-in thermal shutdown, linear current limitation and overvoltage clamp protect

OMNIFET II FULLY AUTOPROTECTED POWER MOSFET

DESCRIPTION The VNB35NV04, VNP35NV04, VNV35NV04, VNW35NV04 are monolithic devices designed in STMicroelectronics VIPower M0-3 Technology, intended for replacement of standard Power MOSFETS from DC up to 25KHz applications. Built in thermal shutdown, linear current limitation and overvoltage clamp

OMNIFET II fully autoprotected Power MOSFET

Features ■ Linear current limitation ■ Thermal shut down ■ Short circuit protection ■ Integrated clamp ■ Low current drawn from input pin ■ Diagnostic feedback through input pin ■ ESD protection ■ Direct access to the gate of the Power MOSFET (analog driving) ■ Compatible with standard P

OMNIFET II fully autoprotected Power MOSFET

Features ■ Linear current limitation ■ Thermal shut down ■ Short circuit protection ■ Integrated clamp ■ Low current drawn from input pin ■ Diagnostic feedback through input pin ■ ESD protection ■ Direct access to the gate of the Power MOSFET (analog driving) ■ Compatible with standard P

OMNIFET II: fully autoprotected Power MOSFET

Description The VNB35NV04-E, VNP35NV04-E and VNV35NV04-E are monolithic devices designed in STMicroelectronics® VIPower® M0-3 Technology, intended for replacement of standard Power MOSFETs from DC up to 25 kHz applications. Built-in thermal shutdown, linear current limitation and overvoltage cla

OMNIFET II: fully autoprotected Power MOSFET

Description The VNB35NV04-E, VNP35NV04-E and VNV35NV04-E are monolithic devices designed in STMicroelectronics® VIPower® M0-3 Technology, intended for replacement of standard Power MOSFETs from DC up to 25 kHz applications. Built-in thermal shutdown, linear current limitation and overvoltage cla

?쒹MNIFET?? FULLY AUTOPROTECTED POWER MOSFET

文件：139.31 Kbytes Page：13 Pages

封装/外壳：PowerSO-10 裸露底部焊盘 包装：管件 描述：IC PWR DRIVER N-CHAN 1:1 PWRSO10 集成电路（IC） 配电开关，负载驱动器

封装/外壳：PowerSO-10 裸露底部焊盘 包装：卷带（TR） 描述：IC PWR DRIVER N-CHAN 1:1 PWRSO10 集成电路（IC） 配电开关，负载驱动器

电源开关 IC - 配电 OMNIFET POWER MOSFET

MOSFET POWER 40V 30A PWRSO10

FULLY AUTOPROTECTED POWER MOSFET

文件：310.77 Kbytes Page：19 Pages

MOSFET POWER 40V 30A PWRSO10