位置：首页 > IC中文资料第1394页 > VNV35NV04-E
| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
VNV35NV04-E | OMNIFET II: fully autoprotected Power MOSFET Description The VNB35NV04-E, VNP35NV04-E and VNV35NV04-E are monolithic devices designed in STMicroelectronics® VIPower® M0-3 Technology, intended for replacement of standard Power MOSFETs from DC up to 25 kHz applications. Built-in thermal shutdown, linear current limitation and overvoltage cla | STMICROELECTRONICS 意法半导体 |   | |
VNV35NV04-E | 封装/外壳：PowerSO-10 裸露底部焊盘 包装：卷带（TR） 描述：IC PWR DRIVER N-CHAN 1:1 PWRSO10 集成电路（IC） 配电开关，负载驱动器 | STMICROELECTRONICS 意法半导体 | | |
OMNIFET II FULLY AUTOPROTECTED POWER MOSFET DESCRIPTION The VNB35NV04, VNP35NV04, VNV35NV04, VNW35NV04 are monolithic devices designed in STMicroelectronics VIPower M0-3 Technology, intended for replacement of standard Power MOSFETS from DC up to 25KHz applications. Built in thermal shutdown, linear current limitation and overvoltage clamp | STMICROELECTRONICS 意法半导体 | | ||
OMNIFET II: fully autoprotected Power MOSFET Description The VNB35NV04-E, VNP35NV04-E and VNV35NV04-E are monolithic devices designed in STMicroelectronics® VIPower® M0-3 Technology, intended for replacement of standard Power MOSFETs from DC up to 25 kHz applications. Built-in thermal shutdown, linear current limitation and overvoltage cla | STMICROELECTRONICS 意法半导体 | | ||
?쏰MNIFET II?? FULLY AUTOPROTECTED POWER MOSFET Description The VNB35NV04-E, VNP35NV04-E and VNV35NV04-E are monolithic devices designed in STMicroelectronics® VIPower® M0-3 Technology, intended for replacement of standard Power MOSFETs from DC up to 25 kHz applications. Built-in thermal shutdown, linear current limitation and overvoltage cla | STMICROELECTRONICS 意法半导体 | | ||
OMNIFET II: fully autoprotected Power MOSFET Description The VNB35NV04-E, VNP35NV04-E and VNV35NV04-E are monolithic devices designed in STMicroelectronics® VIPower® M0-3 Technology, intended for replacement of standard Power MOSFETs from DC up to 25 kHz applications. Built-in thermal shutdown, linear current limitation and overvoltage cla | STMICROELECTRONICS 意法半导体 | | ||
FULLY AUTOPROTECTED POWER MOSFET 文件：310.77 Kbytes Page：19 Pages | STMICROELECTRONICS 意法半导体 | |
VNV35NV04-E产品属性
- 类型
描述
- 型号
VNV35NV04-E
- 功能描述
电源开关 IC - 配电 N-Ch 40V 30A OmniFET
- RoHS
否
- 制造商
Exar
- 输出端数量
1
- 开启电阻（最大值）
85 mOhms
- 开启时间（最大值）
400 us
- 关闭时间（最大值）
20 us
- 工作电源电压
3.2 V to 6.5 V
- 最大工作温度
+ 85 C
- 安装风格
SMD/SMT
- 封装/箱体
SOT-23-5
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ST/意法 |
24+ |
NA/ |
3286 |
原厂直销,现货供应,账期支持! |
|||
ST |
20+ |
na |
65790 |
原装优势主营型号-可开原型号增税票 |
|||
ST/意法 |
2022+ |
HSOP10 |
30000 |
进口原装现货供应,原装 假一罚十 |
|||
ST |
2511 |
原厂原封 |
16900 |
电子元器件采购降本 30%!盈慧通原厂直采,砍掉中间差价 |
|||
ST |
25+ |
原厂原封 |
16900 |
原装，请咨询 |
|||
ST |
23+ |
原厂封装 |
13528 |
振宏微原装正品,假一罚百 |
|||
25+23+ |
原厂原包 |
23360 |
绝对原装正品现货,全新深圳原装进口现货 |
||||
ST/意法 |
23+ |
SOP10 |
11200 |
原厂授权一级代理、全球订货优势渠道、可提供一站式BO |
|||
ST |
23+ |
原厂原封 |
16900 |
正规渠道,只有原装! |
|||
STM |
24+ |
80000 |
VNV35NV04-E规格书下载地址
VNV35NV04-E参数引脚图相关
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VNV35NV04-E数据表相关新闻
VO2611-X017T
VO2611-X017T
2023-7-3VNS3NV04DPTR-E
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2023-5-15VNS3NV04DPTR-E
进口代理
2023-1-7VNV35N07TR-E
全新原装现货 支持第三方机构验证
2022-6-22VO2223A
?VO2223A,当天发货0755-82732291全新原装现货或门市自取.
2020-7-28VO1400AEFTR?原装现货供应
VO1400AEFTR?
2019-12-26
DdatasheetPDF页码索引
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