型号 功能描述 生产厂家&企业 LOGO 操作
VNV35NV04

OMNIFET II FULLY AUTOPROTECTED POWER MOSFET

DESCRIPTION The VNB35NV04, VNP35NV04, VNV35NV04, VNW35NV04 are monolithic devices designed in STMicroelectronics VIPower M0-3 Technology, intended for replacement of standard Power MOSFETS from DC up to 25KHz applications. Built in thermal shutdown, linear current limitation and overvoltage clamp

STMICROELECTRONICS

意法半导体

VNV35NV04

FULLY AUTOPROTECTED POWER MOSFET

文件:310.77 Kbytes Page:19 Pages

STMICROELECTRONICS

意法半导体

VNV35NV04

封装/外壳:PowerSO-10 裸露底部焊盘 包装:管件 描述:IC PWR DRIVER N-CHAN 1:1 PWRSO10 集成电路(IC) 配电开关,负载驱动器

STMICROELECTRONICS

意法半导体

OMNIFET II: fully autoprotected Power MOSFET

Description The VNB35NV04-E, VNP35NV04-E and VNV35NV04-E are monolithic devices designed in STMicroelectronics® VIPower® M0-3 Technology, intended for replacement of standard Power MOSFETs from DC up to 25 kHz applications. Built-in thermal shutdown, linear current limitation and overvoltage cla

STMICROELECTRONICS

意法半导体

OMNIFET II: fully autoprotected Power MOSFET

Description The VNB35NV04-E, VNP35NV04-E and VNV35NV04-E are monolithic devices designed in STMicroelectronics® VIPower® M0-3 Technology, intended for replacement of standard Power MOSFETs from DC up to 25 kHz applications. Built-in thermal shutdown, linear current limitation and overvoltage cla

STMICROELECTRONICS

意法半导体

封装/外壳:PowerSO-10 裸露底部焊盘 包装:卷带(TR) 描述:IC PWR DRIVER N-CHAN 1:1 PWRSO10 集成电路(IC) 配电开关,负载驱动器

STMICROELECTRONICS

意法半导体

OMNIFET II FULLY AUTOPROTECTED POWER MOSFET

DESCRIPTION The VNB35NV04, VNP35NV04, VNV35NV04, VNW35NV04 are monolithic devices designed in STMicroelectronics VIPower M0-3 Technology, intended for replacement of standard Power MOSFETS from DC up to 25KHz applications. Built in thermal shutdown, linear current limitation and overvoltage clamp

STMICROELECTRONICS

意法半导体

OMNIFET II: fully autoprotected Power MOSFET

Description The VNB35NV04-E, VNP35NV04-E and VNV35NV04-E are monolithic devices designed in STMicroelectronics® VIPower® M0-3 Technology, intended for replacement of standard Power MOSFETs from DC up to 25 kHz applications. Built-in thermal shutdown, linear current limitation and overvoltage cla

STMICROELECTRONICS

意法半导体

?쏰MNIFET II?? FULLY AUTOPROTECTED POWER MOSFET

Description The VNB35NV04-E, VNP35NV04-E and VNV35NV04-E are monolithic devices designed in STMicroelectronics® VIPower® M0-3 Technology, intended for replacement of standard Power MOSFETs from DC up to 25 kHz applications. Built-in thermal shutdown, linear current limitation and overvoltage cla

STMICROELECTRONICS

意法半导体

OMNIFET II: fully autoprotected Power MOSFET

Description The VNB35NV04-E, VNP35NV04-E and VNV35NV04-E are monolithic devices designed in STMicroelectronics® VIPower® M0-3 Technology, intended for replacement of standard Power MOSFETs from DC up to 25 kHz applications. Built-in thermal shutdown, linear current limitation and overvoltage cla

STMICROELECTRONICS

意法半导体

FULLY AUTOPROTECTED POWER MOSFET

文件:310.77 Kbytes Page:19 Pages

STMICROELECTRONICS

意法半导体

VNV35NV04产品属性

  • 类型

    描述

  • 型号

    VNV35NV04

  • 功能描述

    电源开关 IC - 配电 N-Ch 40V 30A OmniFET

  • RoHS

  • 制造商

    Exar

  • 输出端数量

    1

  • 开启电阻(最大值)

    85 mOhms

  • 开启时间(最大值)

    400 us

  • 关闭时间(最大值)

    20 us

  • 工作电源电压

    3.2 V to 6.5 V

  • 最大工作温度

    + 85 C

  • 安装风格

    SMD/SMT

  • 封装/箱体

    SOT-23-5

更新时间:2025-8-11 23:39:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
ST
20+
na
65790
原装优势主营型号-可开原型号增税票
ST(意法)
24+
NA/
8735
原厂直销,现货供应,账期支持!
ST/意法
25+
HSOP10
54658
百分百原装现货 实单必成
ST/意法
22+
HSOP10
100000
代理渠道/只做原装/可含税
ST/意法
2022+
HSOP10
30000
进口原装现货供应,原装 假一罚十
ST
2511
原厂原封
16900
电子元器件采购降本 30%!盈慧通原厂直采,砍掉中间差价
ST
25+
原厂原封
16900
原装,请咨询
ST/意法
21+
HSOP10
20000
百域芯优势 实单必成 可开13点增值税发票
ST
23+
原厂封装
13528
振宏微原装正品,假一罚百
25+23+
原厂原包
23361
绝对原装正品现货,全新深圳原装进口现货

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