型号 功能描述 生产厂家 企业 LOGO 操作
VNV35NV04

OMNIFET II FULLY AUTOPROTECTED POWER MOSFET

DESCRIPTION The VNB35NV04, VNP35NV04, VNV35NV04, VNW35NV04 are monolithic devices designed in STMicroelectronics VIPower M0-3 Technology, intended for replacement of standard Power MOSFETS from DC up to 25KHz applications. Built in thermal shutdown, linear current limitation and overvoltage clamp

STMICROELECTRONICS

意法半导体

VNV35NV04

FULLY AUTOPROTECTED POWER MOSFET

文件:310.77 Kbytes Page:19 Pages

STMICROELECTRONICS

意法半导体

VNV35NV04

封装/外壳:PowerSO-10 裸露底部焊盘 包装:管件 描述:IC PWR DRIVER N-CHAN 1:1 PWRSO10 集成电路(IC) 配电开关,负载驱动器

STMICROELECTRONICS

意法半导体

VNV35NV04

MOSFET POWER 40V 30A PWRSO10

STMICROELECTRONICS

意法半导体

OMNIFET II: fully autoprotected Power MOSFET

Description The VNB35NV04-E, VNP35NV04-E and VNV35NV04-E are monolithic devices designed in STMicroelectronics® VIPower® M0-3 Technology, intended for replacement of standard Power MOSFETs from DC up to 25 kHz applications. Built-in thermal shutdown, linear current limitation and overvoltage cla

STMICROELECTRONICS

意法半导体

OMNIFET II: fully autoprotected Power MOSFET

Description The VNB35NV04-E, VNP35NV04-E and VNV35NV04-E are monolithic devices designed in STMicroelectronics® VIPower® M0-3 Technology, intended for replacement of standard Power MOSFETs from DC up to 25 kHz applications. Built-in thermal shutdown, linear current limitation and overvoltage cla

STMICROELECTRONICS

意法半导体

MOSFET POWER 40V 30A PWRSO10

STMICROELECTRONICS

意法半导体

OMNIFET II :FULLY AUTOPROTECTED POWER MOSFET

STMICROELECTRONICS

意法半导体

封装/外壳:PowerSO-10 裸露底部焊盘 包装:卷带(TR) 描述:IC PWR DRIVER N-CHAN 1:1 PWRSO10 集成电路(IC) 配电开关,负载驱动器

STMICROELECTRONICS

意法半导体

OMNIFET II FULLY AUTOPROTECTED POWER MOSFET

DESCRIPTION The VNB35NV04, VNP35NV04, VNV35NV04, VNW35NV04 are monolithic devices designed in STMicroelectronics VIPower M0-3 Technology, intended for replacement of standard Power MOSFETS from DC up to 25KHz applications. Built in thermal shutdown, linear current limitation and overvoltage clamp

STMICROELECTRONICS

意法半导体

OMNIFET II: fully autoprotected Power MOSFET

Description The VNB35NV04-E, VNP35NV04-E and VNV35NV04-E are monolithic devices designed in STMicroelectronics® VIPower® M0-3 Technology, intended for replacement of standard Power MOSFETs from DC up to 25 kHz applications. Built-in thermal shutdown, linear current limitation and overvoltage cla

STMICROELECTRONICS

意法半导体

?쏰MNIFET II?? FULLY AUTOPROTECTED POWER MOSFET

Description The VNB35NV04-E, VNP35NV04-E and VNV35NV04-E are monolithic devices designed in STMicroelectronics® VIPower® M0-3 Technology, intended for replacement of standard Power MOSFETs from DC up to 25 kHz applications. Built-in thermal shutdown, linear current limitation and overvoltage cla

STMICROELECTRONICS

意法半导体

OMNIFET II: fully autoprotected Power MOSFET

Description The VNB35NV04-E, VNP35NV04-E and VNV35NV04-E are monolithic devices designed in STMicroelectronics® VIPower® M0-3 Technology, intended for replacement of standard Power MOSFETs from DC up to 25 kHz applications. Built-in thermal shutdown, linear current limitation and overvoltage cla

STMICROELECTRONICS

意法半导体

FULLY AUTOPROTECTED POWER MOSFET

文件:310.77 Kbytes Page:19 Pages

STMICROELECTRONICS

意法半导体

VNV35NV04产品属性

  • 类型

    描述

  • 型号

    VNV35NV04

  • 功能描述

    电源开关 IC - 配电 N-Ch 40V 30A OmniFET

  • RoHS

  • 制造商

    Exar

  • 输出端数量

    1

  • 开启电阻(最大值)

    85 mOhms

  • 开启时间(最大值)

    400 us

  • 关闭时间(最大值)

    20 us

  • 工作电源电压

    3.2 V to 6.5 V

  • 最大工作温度

    + 85 C

  • 安装风格

    SMD/SMT

  • 封装/箱体

    SOT-23-5

更新时间:2025-9-30 16:38:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
25+23+
原厂原包
23361
绝对原装正品现货,全新深圳原装进口现货
ST
23+
原厂原封
16900
正规渠道,只有原装!
STM
24+
200
STMicroelectronics
25+
10-PowerSO
9350
独立分销商 公司只做原装 诚心经营 免费试样正品保证
ST/意法
2023+
HSOP10
8635
全新原装正品,优势价格
ST/意法
2450+
HSOP10
9850
只做原厂原装正品现货或订货假一赔十!
ST/意法
25+
HSOP10
54658
百分百原装现货 实单必成
ADI
23+
HSOP10
8000
只做原装现货
STMicroelectronics
24+
10-PowerSO
66800
原厂授权一级代理,专注汽车、医疗、工业、新能源!
ST
20+
na
65790
原装优势主营型号-可开原型号增税票

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