位置：首页 > IC中文资料第1394页 > VNV35N07-E
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
VNV35N07-E | OMNIFET: fully autoprotected Power MOSFET Description The VNP35N07-E, VNB35N07-E and VNV35N07-E are monolithic devices made using STMicroelectronics VIPower® technology, intended for replacement of standard Power MOSFETs in DC to 50 KHz applications. Built-in thermal shutdown, linear current limitation and overvoltage clamp protect | STMICROELECTRONICS 意法半导体 |   | |
VNV35N07-E | 封装/外壳：PowerSO-10 裸露底部焊盘 包装：卷带（TR） 描述：IC PWR DRIVER N-CHAN 1:1 PWRSO10 集成电路（IC） 配电开关，负载驱动器 | STMICROELECTRONICS 意法半导体 | | |
VNV35N07-E | OMNIFET II全自动保护功率MOSFET | STMICROELECTRONICS 意法半导体 | | |
OMNIFET FULLY AUTOPROTECTED POWER MOSFET Description The VNP35N07-E, VNB35N07-E and VNV35N07-E are monolithic devices made using STMicroelectronics VIPower® technology, intended for replacement of standard Power MOSFETs in DC to 50 KHz applications. Built-in thermal shutdown, linear current limitation and overvoltage clamp protect the | STMICROELECTRONICS 意法半导体 | | ||
?쒹MNIFET?? FULLY AUTOPROTECTED POWER MOSFET Description The VNP35N07-E, VNB35N07-E and VNV35N07-E are monolithic devices made using STMicroelectronics VIPower® technology, intended for replacement of standard Power MOSFETs in DC to 50 KHz applications. Built-in thermal shutdown, linear current limitation and overvoltage clamp protect the | STMICROELECTRONICS 意法半导体 | | ||
OMNIFET: fully autoprotected Power MOSFET Description The VNP35N07-E, VNB35N07-E and VNV35N07-E are monolithic devices made using STMicroelectronics VIPower® technology, intended for replacement of standard Power MOSFETs in DC to 50 KHz applications. Built-in thermal shutdown, linear current limitation and overvoltage clamp protect | STMICROELECTRONICS 意法半导体 | | ||
OMNIFET FULLY AUTOPROTECTED POWER MOSFET Description The VNP35N07-E, VNB35N07-E and VNV35N07-E are monolithic devices made using STMicroelectronics VIPower® technology, intended for replacement of standard Power MOSFETs in DC to 50 KHz applications. Built-in thermal shutdown, linear current limitation and overvoltage clamp protect the | STMICROELECTRONICS 意法半导体 | | ||
?쒹MNIFET?? FULLY AUTOPROTECTED POWER MOSFET 文件：139.31 Kbytes Page：13 Pages | STMICROELECTRONICS 意法半导体 | |
VNV35N07-E产品属性
- 类型
描述
- 型号
VNV35N07-E
- 功能描述
电源开关 IC - 配电 N-Ch 70V 35A OmniFET
- RoHS
否
- 制造商
Exar
- 输出端数量
1
- 开启电阻（最大值）
85 mOhms
- 开启时间（最大值）
400 us
- 关闭时间（最大值）
20 us
- 工作电源电压
3.2 V to 6.5 V
- 最大工作温度
+ 85 C
- 安装风格
SMD/SMT
- 封装/箱体
SOT-23-5
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ST/意法 |
25+ |
原厂原封可拆 |
54685 |
百分百原装现货有单来谈 |
|||
ST |
20+ |
na |
65790 |
原装优势主营型号-可开原型号增税票 |
|||
ST/意法半导体 |
23+ |
PowerSO-10 |
12700 |
买原装认准中赛美 |
|||
ST/意法半导体 |
23+ |
N/A |
20000 |
||||
ST(意法) |
23+ |
NA |
20094 |
正纳10年以上分销经验原装进口正品做服务做口碑有支持 |
|||
ST/意法半导体 |
21+ |
PowerSO-10 |
8860 |
原装现货,实单价优 |
|||
ST/意法半导体 |
24+ |
PowerSO-10 |
16900 |
原厂原装，价格优势，欢迎洽谈！ |
|||
ST/意法半导体 |
21+ |
PowerSO-10 |
8860 |
只做原装,质量保证 |
|||
ST |
2511 |
原厂原封 |
16900 |
电子元器件采购降本30%!原厂直采,砍掉中间差价 |
|||
ST(意法半导体) |
24+ |
PowerSO-10 |
942 |
特价优势库存质量保证稳定供货 |
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VNV35N07-E规格书下载地址
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