型号 功能描述 生产厂家&企业 LOGO 操作
VNV35N07

OMNIFET FULLY AUTOPROTECTED POWER MOSFET

Description The VNP35N07-E, VNB35N07-E and VNV35N07-E are monolithic devices made using STMicroelectronics VIPower® technology, intended for replacement of standard Power MOSFETs in DC to 50 KHz applications. Built-in thermal shutdown, linear current limitation and overvoltage clamp protect the

STMICROELECTRONICS

意法半导体

VNV35N07

?쒹MNIFET?? FULLY AUTOPROTECTED POWER MOSFET

文件:139.31 Kbytes Page:13 Pages

STMICROELECTRONICS

意法半导体

VNV35N07

封装/外壳:PowerSO-10 裸露底部焊盘 包装:管件 描述:IC PWR DRIVER N-CHAN 1:1 PWRSO10 集成电路(IC) 配电开关,负载驱动器

STMICROELECTRONICS

意法半导体

OMNIFET: fully autoprotected Power MOSFET

Description The VNP35N07-E, VNB35N07-E and VNV35N07-E are monolithic devices made using STMicroelectronics VIPower® technology, intended for replacement of standard Power MOSFETs in DC to 50 KHz applications. Built-in thermal shutdown, linear current limitation and overvoltage clamp protect

STMICROELECTRONICS

意法半导体

OMNIFET: fully autoprotected Power MOSFET

Description The VNP35N07-E, VNB35N07-E and VNV35N07-E are monolithic devices made using STMicroelectronics VIPower® technology, intended for replacement of standard Power MOSFETs in DC to 50 KHz applications. Built-in thermal shutdown, linear current limitation and overvoltage clamp protect

STMICROELECTRONICS

意法半导体

封装/外壳:PowerSO-10 裸露底部焊盘 包装:卷带(TR) 描述:IC PWR DRIVER N-CHAN 1:1 PWRSO10 集成电路(IC) 配电开关,负载驱动器

STMICROELECTRONICS

意法半导体

OMNIFET FULLY AUTOPROTECTED POWER MOSFET

Description The VNP35N07-E, VNB35N07-E and VNV35N07-E are monolithic devices made using STMicroelectronics VIPower® technology, intended for replacement of standard Power MOSFETs in DC to 50 KHz applications. Built-in thermal shutdown, linear current limitation and overvoltage clamp protect the

STMICROELECTRONICS

意法半导体

?쒹MNIFET?? FULLY AUTOPROTECTED POWER MOSFET

Description The VNP35N07-E, VNB35N07-E and VNV35N07-E are monolithic devices made using STMicroelectronics VIPower® technology, intended for replacement of standard Power MOSFETs in DC to 50 KHz applications. Built-in thermal shutdown, linear current limitation and overvoltage clamp protect the

STMICROELECTRONICS

意法半导体

OMNIFET: fully autoprotected Power MOSFET

Description The VNP35N07-E, VNB35N07-E and VNV35N07-E are monolithic devices made using STMicroelectronics VIPower® technology, intended for replacement of standard Power MOSFETs in DC to 50 KHz applications. Built-in thermal shutdown, linear current limitation and overvoltage clamp protect

STMICROELECTRONICS

意法半导体

OMNIFET FULLY AUTOPROTECTED POWER MOSFET

Description The VNP35N07-E, VNB35N07-E and VNV35N07-E are monolithic devices made using STMicroelectronics VIPower® technology, intended for replacement of standard Power MOSFETs in DC to 50 KHz applications. Built-in thermal shutdown, linear current limitation and overvoltage clamp protect the

STMICROELECTRONICS

意法半导体

?쒹MNIFET?? FULLY AUTOPROTECTED POWER MOSFET

文件:139.31 Kbytes Page:13 Pages

STMICROELECTRONICS

意法半导体

VNV35N07产品属性

  • 类型

    描述

  • 型号

    VNV35N07

  • 功能描述

    电源开关 IC - 配电 N-Ch 70V 35A OmniFET

  • RoHS

  • 制造商

    Exar

  • 输出端数量

    1

  • 开启电阻(最大值)

    85 mOhms

  • 开启时间(最大值)

    400 us

  • 关闭时间(最大值)

    20 us

  • 工作电源电压

    3.2 V to 6.5 V

  • 最大工作温度

    + 85 C

  • 安装风格

    SMD/SMT

  • 封装/箱体

    SOT-23-5

更新时间:2025-8-13 12:09:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
ST/意法
22+
N
28000
原装现货只有原装.假一罚十
ST
2511
原厂原封
16900
电子元器件采购降本 30%!盈慧通原厂直采,砍掉中间差价
ST
20+
na
65790
原装优势主营型号-可开原型号增税票
ST
25+
原厂原封
16900
原装,请咨询
ST(意法半导体)
24+
PowerSO-10
5486
百分百原装正品,可原型号开票
ST意法
20+
HSOP
6588
ST
2447
SMD
100500
一级代理专营品牌!原装正品,优势现货,长期排单到货
ST
2025+
PowerSO-10
16000
原装优势绝对有货
ST
24+
POWRERSOP-10
2987
只售原装自家现货!诚信经营!欢迎来电!
ST
2024+
N/A
70000
柒号只做原装 现货价秒杀全网

VNV35N07数据表相关新闻