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VNS3NV04PTR-E价格
参考价格：￥3.3617
型号：VNS3NV04PTR-E 品牌：STMicroelectronics 备注：这里有VNS3NV04PTR-E多少钱，2026年最近7天走势，今日出价，今日竞价，VNS3NV04PTR-E批发/采购报价，VNS3NV04PTR-E行情走势销售排行榜，VNS3NV04PTR-E报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
VNS3NV04PTR-E | 封装/外壳：8-SOIC（0.154"，3.90mm 宽） 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：IC PWR DRIVER N-CHANNEL 1:1 8SO 集成电路（IC） 配电开关，负载驱动器 | STMICROELECTRONICS 意法半导体 |   | |
VNS3NV04PTR-E | 门驱动器 OMNIFET II VIPower 35mOhm 12A 40V | STMICROELECTRONICS 意法半导体 | | |
?쏰MNIFET II?? FULLY AUTOPROTECTED POWER MOSFET Description The VNN3NV04, VNS3NV04, VND3NV04 VND3NV04-1, are monolithic devices designed in STMicroelectronics VIPower M0-3 Technology, intended for replacement of standard Power MOSFETs from DC up to 50 kHz applications. Features ■ Linear current limitation ■ Thermal shutdown ■ Short circuit | STMICROELECTRONICS 意法半导体 | | ||
?쏰MNIFET II?? FULLY AUTOPROTECTED POWER MOSFET DESCRIPTION The VNS3NV04D is a device formed by two monolithic OMNIFET II chips housed in a standard SO-8 package. The OMNIFET II are designed in STMicroelectronics VIPower M0-3 Technology: they are intended for replacement of standard Power MOSFETS from DC up to 50KHz applications. Built in ther | STMICROELECTRONICS 意法半导体 | | ||
OMNIFET II fully autoprotected Power MOSFET Description The VNS3NV04D-E is a device formed by two monolithic OMNIFET II chips housed in a standard SO-8 package. The OMNIFET II are designed in STMicroelectronics VIPower M0-3 Technology: they are intended for replacement of standard Power MOSFETs from DC up to 50KHz applications. Built in th | STMICROELECTRONICS 意法半导体 | | ||
?쏰MNIFET II?? FULLY AUTOPROTECTED POWER MOSFET Description The VNN3NV04, VNS3NV04, VND3NV04 VND3NV04-1, are monolithic devices designed in STMicroelectronics VIPower M0-3 Technology, intended for replacement of standard Power MOSFETs from DC up to 50 kHz applications. Features ■ Linear current limitation ■ Thermal shutdown ■ Short circuit | STMICROELECTRONICS 意法半导体 | | ||
?쏰MNIFET II?? FULLY AUTOPROTECTED POWER MOSFET Description The VNN3NV04, VNS3NV04, VND3NV04 VND3NV04-1, are monolithic devices designed in STMicroelectronics VIPower M0-3 Technology, intended for replacement of standard Power MOSFETs from DC up to 50 kHz applications. Features ■ Linear current limitation ■ Thermal shutdown ■ Short circuit | STMICROELECTRONICS 意法半导体 | |
VNS3NV04PTR-E产品属性
- 类型
描述
- 型号
VNS3NV04PTR-E
- 功能描述
MOSFET OMNIFET II VIPower 35mOhm 12A 40V
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS（导通）
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
STM |
2016+ |
SOP-8 |
5601 |
本公司只做原装,假一罚十,可开17%增值税发票! |
|||
STMicroelectronics |
23+ |
SOP8 |
50000 |
只做原装正品 |
|||
ST |
24+ |
SOP-8 |
63200 |
一级代理/放心采购 |
|||
STM |
25+23+ |
SOP-8 |
26968 |
绝对原装正品全新进口深圳现货 |
|||
ST/意法 |
22+ |
SOP8 |
9000 |
原装正品,支持实单! |
|||
ST/意法半导体 |
21+ |
SO-8 |
8860 |
只做原装,质量保证 |
|||
STM |
25+ |
SOP-8 |
10500 |
全新原装现货,假一赔十 |
|||
ST(意法) |
23+ |
NA |
20094 |
正纳10年以上分销经验原装进口正品做服务做口碑有支持 |
|||
STMICRO |
25+ |
N/A |
21000 |
正规渠道,免费送样。支持账期,BOM一站式配齐 |
|||
ST |
2450+ |
SOP8 |
8850 |
只做原装正品假一赔十为客户做到零风险!! |
VNS3NV04PTR-E规格书下载地址
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VNS3NV04PTR-E数据表相关新闻
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