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VNS3NV04PTR-E价格
参考价格：￥3.3617
型号：VNS3NV04PTR-E 品牌：STMicroelectronics 备注：这里有VNS3NV04PTR-E多少钱，2026年最近7天走势，今日出价，今日竞价，VNS3NV04PTR-E批发/采购报价，VNS3NV04PTR-E行情走势销售排行榜，VNS3NV04PTR-E报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
VNS3NV04PTR-E | 封装/外壳：8-SOIC（0.154"，3.90mm 宽） 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：IC PWR DRIVER N-CHANNEL 1:1 8SO 集成电路（IC） 配电开关，负载驱动器 | STMICROELECTRONICS 意法半导体 |   | |
VNS3NV04PTR-E | 门驱动器 OMNIFET II VIPower 35mOhm 12A 40V | STMICROELECTRONICS 意法半导体 | | |
?쏰MNIFET II?? FULLY AUTOPROTECTED POWER MOSFET Description The VNN3NV04, VNS3NV04, VND3NV04 VND3NV04-1, are monolithic devices designed in STMicroelectronics VIPower M0-3 Technology, intended for replacement of standard Power MOSFETs from DC up to 50 kHz applications. Features ■ Linear current limitation ■ Thermal shutdown ■ Short circuit | STMICROELECTRONICS 意法半导体 | | ||
?쏰MNIFET II?? FULLY AUTOPROTECTED POWER MOSFET DESCRIPTION The VNS3NV04D is a device formed by two monolithic OMNIFET II chips housed in a standard SO-8 package. The OMNIFET II are designed in STMicroelectronics VIPower M0-3 Technology: they are intended for replacement of standard Power MOSFETS from DC up to 50KHz applications. Built in ther | STMICROELECTRONICS 意法半导体 | | ||
OMNIFET II fully autoprotected Power MOSFET Description The VNS3NV04D-E is a device formed by two monolithic OMNIFET II chips housed in a standard SO-8 package. The OMNIFET II are designed in STMicroelectronics VIPower M0-3 Technology: they are intended for replacement of standard Power MOSFETs from DC up to 50KHz applications. Built in th | STMICROELECTRONICS 意法半导体 | | ||
?쏰MNIFET II?? FULLY AUTOPROTECTED POWER MOSFET Description The VNN3NV04, VNS3NV04, VND3NV04 VND3NV04-1, are monolithic devices designed in STMicroelectronics VIPower M0-3 Technology, intended for replacement of standard Power MOSFETs from DC up to 50 kHz applications. Features ■ Linear current limitation ■ Thermal shutdown ■ Short circuit | STMICROELECTRONICS 意法半导体 | | ||
?쏰MNIFET II?? FULLY AUTOPROTECTED POWER MOSFET Description The VNN3NV04, VNS3NV04, VND3NV04 VND3NV04-1, are monolithic devices designed in STMicroelectronics VIPower M0-3 Technology, intended for replacement of standard Power MOSFETs from DC up to 50 kHz applications. Features ■ Linear current limitation ■ Thermal shutdown ■ Short circuit | STMICROELECTRONICS 意法半导体 | |
VNS3NV04PTR-E产品属性
- 类型
描述
- 型号
VNS3NV04PTR-E
- 功能描述
MOSFET OMNIFET II VIPower 35mOhm 12A 40V
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS（导通）
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ST |
2450+ |
SOP8 |
8850 |
只做原装正品假一赔十为客户做到零风险!! |
|||
ISC/固电 |
23+ |
TO-3 |
11200 |
原厂授权一级代理、全球订货优势渠道、可提供一站式BO |
|||
ST |
23+ |
原厂封装 |
13528 |
振宏微原装正品,假一罚百 |
|||
STMicroelectronics |
24+ |
8-SO |
66800 |
原厂授权一级代理,专注汽车、医疗、工业、新能源！ |
|||
SST |
原厂封装 |
9800 |
原装进口公司现货假一赔百 |
||||
VNS008A |
25+ |
480 |
480 |
||||
ST(意法) |
23+ |
NA |
20094 |
正纳10年以上分销经验原装进口正品做服务做口碑有支持 |
|||
ST |
25+ |
SOP-8 |
2987 |
只售原装自家现货!诚信经营!欢迎来电! |
|||
SILICONIX |
24+ |
2200 |
|||||
ST/意法 |
22+ |
SOP8 |
10090 |
原装正品现货 可开增值税发票 |
VNS3NV04PTR-E规格书下载地址
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VNS3NV04PTR-E数据表相关新闻
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全新原装现货 支持第三方机构验证
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?VO2223A,当天发货0755-82732291全新原装现货或门市自取.
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2019-12-26
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