OMNIFET II fully autoprotected Power MOSFET

Description The VNS3NV04D-E is a device formed by two monolithic OMNIFET II chips housed in a standard SO-8 package. The OMNIFET II are designed in STMicroelectronics VIPower M0-3 Technology: they are intended for replacement of standard Power MOSFETs from DC up to 50KHz applications. Built in th

封装/外壳：8-SOIC（0.154"，3.90mm 宽） 包装：管件 描述：IC PWR DRIVER N-CHANNEL 1:1 8SO 集成电路（IC） 配电开关，负载驱动器

?쏰MNIFET II?? FULLY AUTOPROTECTED POWER MOSFET

DESCRIPTION The VNS3NV04D is a device formed by two monolithic OMNIFET II chips housed in a standard SO-8 package. The OMNIFET II are designed in STMicroelectronics VIPower M0-3 Technology: they are intended for replacement of standard Power MOSFETS from DC up to 50KHz applications. Built in ther

OMNIFET II fully autoprotected Power MOSFET

Features ■ Linear current limitation ■ Thermal shutdown ■ Short circuit protection ■ Integrated clamp ■ Low current drawn from input pin ■ Diagnostic feedback through input pin ■ ESD protection ■ Direct access to the gate of the Power MOSFET (analog driving) ■ Compatible with standard Po

?쏰MNIFET II?? FULLY AUTOPROTECTED POWER MOSFET

Description The VNN3NV04, VNS3NV04, VND3NV04 VND3NV04-1, are monolithic devices designed in STMicroelectronics VIPower M0-3 Technology, intended for replacement of standard Power MOSFETs from DC up to 50 kHz applications. Features ■ Linear current limitation ■ Thermal shutdown ■ Short circuit

OMNIFET II fully autoprotected Power MOSFET

文件：493.65 Kbytes Page：26 Pages

OMNIFET II fully autoprotected Power MOSFET

文件：493.65 Kbytes Page：26 Pages