?쏰MNIFET II?? FULLY AUTOPROTECTED POWER MOSFET

Description The VNN3NV04, VNS3NV04, VND3NV04 VND3NV04-1, are monolithic devices designed in STMicroelectronics VIPower M0-3 Technology, intended for replacement of standard Power MOSFETs from DC up to 50 kHz applications. Features ■ Linear current limitation ■ Thermal shutdown ■ Short circuit

OMNIFET II fully autoprotected Power MOSFET

Features ■ Linear current limitation ■ Thermal shutdown ■ Short circuit protection ■ Integrated clamp ■ Low current drawn from input pin ■ Diagnostic feedback through input pin ■ ESD protection ■ Direct access to the gate of the Power MOSFET (analog driving) ■ Compatible with standard Po

OMNIFET II fully autoprotected Power MOSFET

文件：493.65 Kbytes Page：26 Pages

OMNIFET II fully autoprotected Power MOSFET

Features ■ Linear current limitation ■ Thermal shutdown ■ Short circuit protection ■ Integrated clamp ■ Low current drawn from input pin ■ Diagnostic feedback through input pin ■ ESD protection ■ Direct access to the gate of the Power MOSFET (analog driving) ■ Compatible with standard Po

?쏰MNIFET II?? FULLY AUTOPROTECTED POWER MOSFET

DESCRIPTION The VNS3NV04D is a device formed by two monolithic OMNIFET II chips housed in a standard SO-8 package. The OMNIFET II are designed in STMicroelectronics VIPower M0-3 Technology: they are intended for replacement of standard Power MOSFETS from DC up to 50KHz applications. Built in ther

OMNIFET II fully autoprotected Power MOSFET

Description The VNS3NV04D-E is a device formed by two monolithic OMNIFET II chips housed in a standard SO-8 package. The OMNIFET II are designed in STMicroelectronics VIPower M0-3 Technology: they are intended for replacement of standard Power MOSFETs from DC up to 50KHz applications. Built in th

Automotive OMNIFET II fully autoprotected Power MOSFET

Features  AEC-Q100 qualified  ECOPACK: lead free and RoHS compliant  Linear current limitation  Thermal shutdown  Short-circuit protection  Integrated clamp  Low current drawn from input pin  Diagnostic feedback through input pin  ESD protection  Direct access to the gate of t

OMNIFET II全自动保护功率MOSFET

The VNS3NV04DP-E device is made up of two monolithic chips (OMNIFET II) housed in a standard SO-8 package. The OMNIFET II is designed using STMicroelectronics™ VIPower™ M0-3 technology and is intended for replacement of standard Power MOSFETs in up to 50 kHz DC applications.\n\n Built-in thermal shu • AEC-Q100 qualified \n• ECOPACK: lead free and RoHS compliant \n• Linear current limitation \n• Thermal shutdown \n• Short circuit protection \n• Integrated clamp• Low current drawn from input pin \n• Diagnostic feedback through input pin \n• ESD protection \n• Direct access to the gate of the Powe;

Automotive OMNIFET II fully autoprotected Power MOSFET

Features  AEC-Q100 qualified  ECOPACK: lead free and RoHS compliant  Linear current limitation  Thermal shutdown  Short-circuit protection  Integrated clamp  Low current drawn from input pin  Diagnostic feedback through input pin  ESD protection  Direct access to the gate of t

Automotive OMNIFET II fully autoprotected Power MOSFET

Features  AEC-Q100 qualified  ECOPACK: lead free and RoHS compliant  Linear current limitation  Thermal shutdown  Short-circuit protection  Integrated clamp  Low current drawn from input pin  Diagnostic feedback through input pin  ESD protection  Direct access to the gate of t

OMNIFET II fully autoprotected Power MOSFET

Description The VNS3NV04D-E is a device formed by two monolithic OMNIFET II chips housed in a standard SO-8 package. The OMNIFET II are designed in STMicroelectronics VIPower M0-3 Technology: they are intended for replacement of standard Power MOSFETs from DC up to 50KHz applications. Built in th

OMNIFET II fully autoprotected Power MOSFET

文件：493.65 Kbytes Page：26 Pages

OMNIFET II FULLY AUTOPROTECTED POWER MOSFET

文件：249.33 Kbytes Page：14 Pages

封装/外壳：8-SOIC（0.154"，3.90mm 宽） 包装：管件 描述：MOSFET 2N-CH 40V 3.5A 8-SOIC 集成电路（IC） 配电开关，负载驱动器

封装/外壳：8-SOIC（0.154"，3.90mm 宽） 包装：管件 描述：IC PWR DRIVER N-CHANNEL 1:1 8SO 集成电路（IC） 配电开关，负载驱动器

OMNIFET II fully autoprotected Power MOSFET

OMNIFET II fully autoprotected Power MOSFET

文件：289.94 Kbytes Page：21 Pages

OMNIFET II fully autoprotected Power MOSFET

文件：289.94 Kbytes Page：21 Pages

fully autoprotected Power MOSFET

文件：287.49 Kbytes Page：22 Pages

门驱动器 OMNIFET II VIPower 35mOhm 12A 40V

?쏰MNIFET II?? FULLY AUTOPROTECTED POWER MOSFET

Description The VNN3NV04, VNS3NV04, VND3NV04 VND3NV04-1, are monolithic devices designed in STMicroelectronics VIPower M0-3 Technology, intended for replacement of standard Power MOSFETs from DC up to 50 kHz applications. Features ■ Linear current limitation ■ Thermal shutdown ■ Short circuit

?쏰MNIFET II?? FULLY AUTOPROTECTED POWER MOSFET

Description The VNN3NV04, VNS3NV04, VND3NV04 VND3NV04-1, are monolithic devices designed in STMicroelectronics VIPower M0-3 Technology, intended for replacement of standard Power MOSFETs from DC up to 50 kHz applications. Features ■ Linear current limitation ■ Thermal shutdown ■ Short circuit