?쏰MNIFET II?? FULLY AUTOPROTECTED POWER MOSFET

DESCRIPTION The VNS3NV04D is a device formed by two monolithic OMNIFET II chips housed in a standard SO-8 package. The OMNIFET II are designed in STMicroelectronics VIPower M0-3 Technology: they are intended for replacement of standard Power MOSFETS from DC up to 50KHz applications. Built in ther

封装/外壳：8-SOIC（0.154"，3.90mm 宽） 包装：管件 描述：IC PWR DRIVER N-CHANNEL 1:1 8SO 集成电路（IC） 配电开关，负载驱动器

“OMNIFET II”: FULLY AUTOPROTECTED POWER MOSFET

OMNIFET II fully autoprotected Power MOSFET

Description The VNS3NV04D-E is a device formed by two monolithic OMNIFET II chips housed in a standard SO-8 package. The OMNIFET II are designed in STMicroelectronics VIPower M0-3 Technology: they are intended for replacement of standard Power MOSFETs from DC up to 50KHz applications. Built in th

Automotive OMNIFET II fully autoprotected Power MOSFET

Features  AEC-Q100 qualified  ECOPACK: lead free and RoHS compliant  Linear current limitation  Thermal shutdown  Short-circuit protection  Integrated clamp  Low current drawn from input pin  Diagnostic feedback through input pin  ESD protection  Direct access to the gate of t

Automotive OMNIFET II fully autoprotected Power MOSFET

Features  AEC-Q100 qualified  ECOPACK: lead free and RoHS compliant  Linear current limitation  Thermal shutdown  Short-circuit protection  Integrated clamp  Low current drawn from input pin  Diagnostic feedback through input pin  ESD protection  Direct access to the gate of t

Automotive OMNIFET II fully autoprotected Power MOSFET

Features  AEC-Q100 qualified  ECOPACK: lead free and RoHS compliant  Linear current limitation  Thermal shutdown  Short-circuit protection  Integrated clamp  Low current drawn from input pin  Diagnostic feedback through input pin  ESD protection  Direct access to the gate of t

OMNIFET II fully autoprotected Power MOSFET

Description The VNS3NV04D-E is a device formed by two monolithic OMNIFET II chips housed in a standard SO-8 package. The OMNIFET II are designed in STMicroelectronics VIPower M0-3 Technology: they are intended for replacement of standard Power MOSFETs from DC up to 50KHz applications. Built in th

OMNIFET II FULLY AUTOPROTECTED POWER MOSFET

文件：249.33 Kbytes Page：14 Pages

封装/外壳：8-SOIC（0.154"，3.90mm 宽） 包装：管件 描述：IC PWR DRIVER N-CHANNEL 1:1 8SO 集成电路（IC） 配电开关，负载驱动器

OMNIFET II fully autoprotected Power MOSFET

OMNIFET II全自动保护功率MOSFET

OMNIFET II fully autoprotected Power MOSFET

文件：289.94 Kbytes Page：21 Pages

OMNIFET II fully autoprotected Power MOSFET

文件：289.94 Kbytes Page：21 Pages

?쏰MNIFET II?? FULLY AUTOPROTECTED POWER MOSFET

Description The VNN3NV04, VNS3NV04, VND3NV04 VND3NV04-1, are monolithic devices designed in STMicroelectronics VIPower M0-3 Technology, intended for replacement of standard Power MOSFETs from DC up to 50 kHz applications. Features ■ Linear current limitation ■ Thermal shutdown ■ Short circuit

?쏰MNIFET II?? FULLY AUTOPROTECTED POWER MOSFET

Description The VNN3NV04, VNS3NV04, VND3NV04 VND3NV04-1, are monolithic devices designed in STMicroelectronics VIPower M0-3 Technology, intended for replacement of standard Power MOSFETs from DC up to 50 kHz applications. Features ■ Linear current limitation ■ Thermal shutdown ■ Short circuit

?쏰MNIFET II?? FULLY AUTOPROTECTED POWER MOSFET

Description The VNN3NV04, VNS3NV04, VND3NV04 VND3NV04-1, are monolithic devices designed in STMicroelectronics VIPower M0-3 Technology, intended for replacement of standard Power MOSFETs from DC up to 50 kHz applications. Features ■ Linear current limitation ■ Thermal shutdown ■ Short circuit