?쏰MNIFET II?? FULLY AUTOPROTECTED POWER MOSFET

Description The VNN3NV04, VNS3NV04, VND3NV04 VND3NV04-1, are monolithic devices designed in STMicroelectronics VIPower M0-3 Technology, intended for replacement of standard Power MOSFETs from DC up to 50 kHz applications. Features ■ Linear current limitation ■ Thermal shutdown ■ Short circuit

OMNIFET II fully autoprotected Power MOSFET

Features ■ Linear current limitation ■ Thermal shutdown ■ Short circuit protection ■ Integrated clamp ■ Low current drawn from input pin ■ Diagnostic feedback through input pin ■ ESD protection ■ Direct access to the gate of the Power MOSFET (analog driving) ■ Compatible with standard Po

OMNIFET II fully autoprotected Power MOSFET

文件：493.65 Kbytes Page：26 Pages

OMNIFET II fully autoprotected Power MOSFET

Features ■ Linear current limitation ■ Thermal shutdown ■ Short circuit protection ■ Integrated clamp ■ Low current drawn from input pin ■ Diagnostic feedback through input pin ■ ESD protection ■ Direct access to the gate of the Power MOSFET (analog driving) ■ Compatible with standard Po

OMNIFET II fully autoprotected Power MOSFET

Features ■ Linear current limitation ■ Thermal shutdown ■ Short circuit protection ■ Integrated clamp ■ Low current drawn from input pin ■ Diagnostic feedback through input pin ■ ESD protection ■ Direct access to the gate of the Power MOSFET (analog driving) ■ Compatible with standard Po

OMNIFET II全自动保护功率MOSFET

The VNN3NV04P-E, VNS3NV04P-E, are monolithic devices designed in STMicroelectronics®VIPower®M0-3 Technology, intended for replacement of standard Power MOSFETs from DC up to 50 kHz applications. Built in thermal shutdown, linear current limitation and overvoltage clamp protect the chip in harsh envi • Linear current limitation \n• Thermal shutdown \n• Short circuit protection \n• Integrated clamp \n• Low current drawn from input pin \n• Diagnostic feedback through input pin \n• ESD protection \n• Direct access to the gate of the Power MOSFET (analog driving) \n• Compatible with standard Power M;

OMNIFET II fully autoprotected Power MOSFET

文件：493.65 Kbytes Page：26 Pages

OMNIFET II fully autoprotected Power MOSFET

文件：493.65 Kbytes Page：26 Pages

fully autoprotected Power MOSFET

文件：287.49 Kbytes Page：22 Pages

OMNIFET II fully autoprotected Power MOSFET

文件：284.38 Kbytes Page：22 Pages

封装/外壳：TO-261-4，TO-261AA 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：IC PWR DRIVER N-CHAN 1:1 SOT223 集成电路（IC） 配电开关，负载驱动器

封装/外壳：TO-261-4，TO-261AA 包装：管件 描述：IC PWR DRIVER N-CHAN 1:1 SOT223 集成电路（IC） 配电开关，负载驱动器

fully autoprotected Power MOSFET

文件：469.7 Kbytes Page：26 Pages

?쏰MNIFET II?? FULLY AUTOPROTECTED POWER MOSFET

Description The VNN3NV04, VNS3NV04, VND3NV04 VND3NV04-1, are monolithic devices designed in STMicroelectronics VIPower M0-3 Technology, intended for replacement of standard Power MOSFETs from DC up to 50 kHz applications. Features ■ Linear current limitation ■ Thermal shutdown ■ Short circuit

?쏰MNIFET II?? FULLY AUTOPROTECTED POWER MOSFET

Description The VNN3NV04, VNS3NV04, VND3NV04 VND3NV04-1, are monolithic devices designed in STMicroelectronics VIPower M0-3 Technology, intended for replacement of standard Power MOSFETs from DC up to 50 kHz applications. Features ■ Linear current limitation ■ Thermal shutdown ■ Short circuit

?쏰MNIFET II?? FULLY AUTOPROTECTED POWER MOSFET

DESCRIPTION The VNS3NV04D is a device formed by two monolithic OMNIFET II chips housed in a standard SO-8 package. The OMNIFET II are designed in STMicroelectronics VIPower M0-3 Technology: they are intended for replacement of standard Power MOSFETS from DC up to 50KHz applications. Built in ther

OMNIFET II fully autoprotected Power MOSFET

Description The VNS3NV04D-E is a device formed by two monolithic OMNIFET II chips housed in a standard SO-8 package. The OMNIFET II are designed in STMicroelectronics VIPower M0-3 Technology: they are intended for replacement of standard Power MOSFETs from DC up to 50KHz applications. Built in th