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VNS3NV04DPTR-E价格
参考价格：￥4.3075
型号：VNS3NV04DPTR-E 品牌：STMicroelectronics 备注：这里有VNS3NV04DPTR-E多少钱，2026年最近7天走势，今日出价，今日竞价，VNS3NV04DPTR-E批发/采购报价，VNS3NV04DPTR-E行情走势销售排行榜，VNS3NV04DPTR-E报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
VNS3NV04DPTR-E | Automotive OMNIFET II fully autoprotected Power MOSFET Features AEC-Q100 qualified ECOPACK: lead free and RoHS compliant Linear current limitation Thermal shutdown Short-circuit protection Integrated clamp Low current drawn from input pin Diagnostic feedback through input pin ESD protection Direct access to the gate of t | STMICROELECTRONICS 意法半导体 |   | |
VNS3NV04DPTR-E | 封装/外壳：8-SOIC（0.154"，3.90mm 宽） 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：IC PWR DRIVER N-CHANNEL 1:1 8SO 集成电路（IC） 配电开关，负载驱动器 | STMICROELECTRONICS 意法半导体 | | |
VNS3NV04DPTR-E | OMNIFET II fully autoprotected Power MOSFET 文件：289.94 Kbytes Page：21 Pages | STMICROELECTRONICS 意法半导体 | | |
?쏰MNIFET II?? FULLY AUTOPROTECTED POWER MOSFET Description The VNN3NV04, VNS3NV04, VND3NV04 VND3NV04-1, are monolithic devices designed in STMicroelectronics VIPower M0-3 Technology, intended for replacement of standard Power MOSFETs from DC up to 50 kHz applications. Features ■ Linear current limitation ■ Thermal shutdown ■ Short circuit | STMICROELECTRONICS 意法半导体 | | ||
?쏰MNIFET II?? FULLY AUTOPROTECTED POWER MOSFET DESCRIPTION The VNS3NV04D is a device formed by two monolithic OMNIFET II chips housed in a standard SO-8 package. The OMNIFET II are designed in STMicroelectronics VIPower M0-3 Technology: they are intended for replacement of standard Power MOSFETS from DC up to 50KHz applications. Built in ther | STMICROELECTRONICS 意法半导体 | | ||
OMNIFET II fully autoprotected Power MOSFET Description The VNS3NV04D-E is a device formed by two monolithic OMNIFET II chips housed in a standard SO-8 package. The OMNIFET II are designed in STMicroelectronics VIPower M0-3 Technology: they are intended for replacement of standard Power MOSFETs from DC up to 50KHz applications. Built in th | STMICROELECTRONICS 意法半导体 | | ||
?쏰MNIFET II?? FULLY AUTOPROTECTED POWER MOSFET Description The VNN3NV04, VNS3NV04, VND3NV04 VND3NV04-1, are monolithic devices designed in STMicroelectronics VIPower M0-3 Technology, intended for replacement of standard Power MOSFETs from DC up to 50 kHz applications. Features ■ Linear current limitation ■ Thermal shutdown ■ Short circuit | STMICROELECTRONICS 意法半导体 | | ||
?쏰MNIFET II?? FULLY AUTOPROTECTED POWER MOSFET Description The VNN3NV04, VNS3NV04, VND3NV04 VND3NV04-1, are monolithic devices designed in STMicroelectronics VIPower M0-3 Technology, intended for replacement of standard Power MOSFETs from DC up to 50 kHz applications. Features ■ Linear current limitation ■ Thermal shutdown ■ Short circuit | STMICROELECTRONICS 意法半导体 | |
VNS3NV04DPTR-E产品属性
- 类型
描述
- 型号
VNS3NV04DPTR-E
- 功能描述
MOSFET OMNIFET II VIPower 35mOhm 12A 40V
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS（导通）
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ST/意法 |
26+ |
SOP8 |
6000 |
只做原装 特价 一片起送 |
|||
ST/意法 |
25+ |
SOP-8 |
32360 |
ST/意法全新特价VNS3NV04DPTR-E即刻询购立享优惠#长期有货 |
|||
ST |
2450+ |
SOP8 |
9485 |
只做原厂原装正品终端客户免费申请样品 |
|||
ST/意法 |
26+ |
原厂封装 |
102800 |
原厂授权一级代理,专注军工、汽车、医疗、工业、新能源、电力! |
|||
ST |
25+ |
SOP8 |
6800 |
全新原装公司现货低价 |
|||
ST/意法 |
24+ |
SOP8 |
5000 |
进口原装现货 |
|||
ST(意法) |
25+ |
SO-8 |
7589 |
全新原装现货,支持排单订货,可含税开票 |
|||
ST(意法) |
24+ |
SO-8 |
5561 |
只做原装现货假一罚十!价格最低!只卖原装现货 |
|||
ST |
2026+ |
SOP8 |
5000 |
只做原装,公司现货,提供一站式BOM配单服务! |
|||
ST(意法) |
25+ |
SO-8 |
22412 |
原装正品现货,原厂订货,可支持含税原型号开票。 |
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VNS3NV04DPTR-E规格书下载地址
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VNS3NV04DPTR-E数据表相关新闻
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https://hfx03.114ic.com/
2022-3-28VNS1NV04DPTR-E产品种类:门驱动器
VNS1NV04DPTR-E
2021-9-17
DdatasheetPDF页码索引
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